Selective Deposition and Bond Strain Relaxation in Silicon PECVD Using Time Modulated Silane Flow, G. N. Parsons et al., Japanese Journal of Applied Physics, Part 1 Jun. 1992, pp. 1943-1947, vol. 31 No. 6B. |
Selective Tungsten on Silicon by the Alternating Cyclic, AC, Hydrogen reduction of WF/sub 6/', A. Reisman et al., Journal of the Electrochemical Society, Feb. 1990, USA, vol. 137, No. 2, pp. 722-727. |
"Enhanced Mobility Top-Gate Amorphous Silicon Thin-Film Transistor with Selectively Deposited Source/Drain Contacts," G. N. Parsons, IEEE Electron Devices Letters, vol. 2, Feb. 1992, pp. 80-82. |
"Selective Deposition of Silicon by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Silane Flow," G. N. Parsons, Appl. Phys. Lett. 59 (20), Nov. 1991, pp. 2546-2548. |