Claims
- 1. A method for forming an etched pattern in fabricating semiconductor devices which comprises:
- (a) forming over a semiconductor substrate, a conductor layer of a metal, metal alloy or semiconductor layer capable of anodic oxidation;
- (b) forming a positive type photoresist pattern having an opening portion wider than a dimension of a light transmitting portion of a photomask, by forming over said conductor layer said positive type photoresist layer and by developing said photo-resist layer after selectively exposing said photoresist layer by said photomask;
- (c) forming over said conductor layer of said opening portion, an etching mask comprising an anodic oxidation pattern defined by said photoresist pattern and anodically oxidized in a solution of ammonium pentaborate in ethylene glycol;
- (d) removing said photoresist pattern;
- (e) selectively etching said conductor layer through said etching mask with a solution and leaving the conductor layer pattern masked with said etching mask, whereby a conductor layer pattern faithfully corresponding to the photomask pattern may be formed, said conductor layer pattern comprising an electrode for a semiconductor region disposed in said substrate under said conductor layer pattern.
- 2. A method as set forth in claim 1 which further comprises:
- (a) forming over an entire surface of said conductor layer, a thin anodic oxidation layer before forming said positive type photoresist layer;
- (b) forming an anodic oxidation pattern having a thickness thicker than said thin anodic oxidation over said opening portion of the mask of said photoresist pattern; and
- (c) etching said thin anodic oxidation layer and said conductor layer by the mask of said thick anodic oxidation pattern.
- 3. The method of claim 1 wherein the metal of the conductor layer is aluminum.
Priority Claims (1)
Number |
Date |
Country |
Kind |
51-54051 |
May 1976 |
JPX |
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Parent Case Info
This is a continuation, of application Ser. No. 794,070, filed May 5, 1977, now abandoned.
US Referenced Citations (7)
Continuations (1)
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Number |
Date |
Country |
Parent |
794070 |
May 1977 |
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