Claims
- 1. A method of plating a copper film on a substrate in an electrochemical plating apparatus, comprising:
positioning a substrate in an electrolyte solution; applying a current between the substrate and an anode to generate a current density of between about 10 mA/cm2 and about 40 mA/cm2 on the substrate surface; rotating the substrate at a rotational speed of between about 20 rpm and about 50 rpm; and plating a copper film having a sheet resistance of less than about 16.5×10−2 Ohms/cm2.
- 2. The method of claim 1, wherein the sheet resistance is between about 15.25×10−2 Ohms/cm2 and about 16.25×10−2 Ohms/cm2.
- 3. The method of claim 1, wherein the copper film has a pre-anneal stress of less than about 90 Mpa.
- 4. The method of claim 1, wherein the copper film has post anneal:pre-anneal stress ratio of less than about 6.
- 5. The method of claim 1, wherein the copper film has a sulfur concentration of less than about 8×1018 atoms/cm3.
- 6. The method of claim 1, wherein the copper film has a nitrogen concentration of less than about 25×1018 atoms/cm3.
- 7. The method of claim 1, wherein the copper film has an oxygen concentration of less than about 9×1018 atoms/cm3.
- 8. The method of claim 1, wherein the copper film has a chlorine concentration of less than about 20×1018 atoms/cm3.
- 9. The method of claim 1, wherein the copper film has a carbon concentration of less than about 50×1018 atoms/cm3.
- 10. The method of claim 2, wherein the copper film has a sulfur concentration of less than about 8×1018 atoms/cm3, a nitrogen concentration of less than about 25×1018 atoms/cm3, an oxygen concentration of less than about 9×1018 atoms/cm3, a chlorine concentration of less than about 20×1018 atoms/cm3, and a carbon concentration of less than about 50×1018 atoms/cm3.
- 11. The method of claim 2, wherein the current density is between about 15 mA/cm2 and about 30 mA/cm2, and the rotational speed is between about 5 rpm and about 20 rpm.
- 12. A copper film having a sheet resistance of between about 10.5×10−2 Ohms/cm2 and about 16.5×10−2 Ohms/cm2 formed onto a semiconductor substrate via an electrochemical deposition process, wherein the process includes applying a current density to the substrate surface of between about 15 mA/cm2 and about 30 mA/cm2 during the process and rotating the substrate at between about 10 rpm and about 25 rpm during the process.
- 13. The copper film of claim 12, wherein the copper film comprises a sulfur concentration of less than about 8×1018 atoms/cm3.
- 14. The copper film of claim 12, wherein the copper film comprises a nitrogen concentration of less than about 25×1018 atoms/cm3.
- 15. The copper film of claim 12, wherein the copper film comprises, an oxygen concentration of less than about 9×1018 atoms/cm3.
- 16. The copper film of claim 12, wherein the copper film comprises a chlorine concentration of less than about 20×1018 atoms/cm3.
- 17. The copper film of claim 12, wherein the copper film has sheet resistance of between about 15.25×10−2 Ohms/cm2 and about 16.25×10−2 Ohms/cm2.
- 18. The copper film of claim 12, wherein the copper film has a pre-anneal stress of less than about 90 Mpa.
- 19. The copper film of claim 12, wherein the copper film has post anneal: pre-anneal stress ratio of less than about 6.
- 20. The copper film of claim 19, wherein the copper film has a sulfur concentration of less than about 8×1018 atoms/cm3, a nitrogen concentration of less than about 25×1018 atoms/cm3, an oxygen concentration of less than about 9×1018 atoms/cm3, a chlorine concentration of less than about 20×1018 atoms/cm3, and a carbon concentration of less than about 50×1018 atoms/cm3.
- 21. A copper layer formed on a semiconductor substrate, the copper layer comprising:
a sheet resistance of between about 15.5×10−2 Ohms/cm2 and about 16.5×10−2 Ohms/cm2; a pre-anneal stress of less than about 90 Mpa; and a post anneal:pre-anneal stress ratio of less than about 6.
- 22. The copper layer of claim 21, wherein the copper layer has a sulfur concentration of less than about 8×1018 atoms/cm3, a nitrogen concentration of less than about 25×1018 atoms/cm3, an oxygen concentration of less than about 9×1018 atoms/cm3, a chlorine concentration of less than about 20×1018 atoms/cm3, and a carbon concentration of less than about 50×1018 atoms/cm3.
- 23. The copper layer of claim 21, wherein the copper layer is formed by an electrochemical deposition process using a current density of between about 10 mA/cm2 and about 40 mA/cm2 on the substrate surface and a substrate rotation speed of between about 20 rpm and about 50 rpm.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. provisional patent application serial No. 60/355,419 filed Feb. 5, 2002, which is herein incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60355419 |
Feb 2002 |
US |