Claims
- 1. A method for forming an interlayer dielectric film, comprising the step of forming the interlayer dielectric film out of an organic/inorganic hybrid film by polymerizing a source material within plasma with a first electron temperature lower than a second electron temperature which causes organosilicon bonds to decompose by the plasma, the source material including an organosilicon compound.
- 2. The method of claim 1, wherein the organosilicon compound has an Si—O—Si bond.
- 3. The method of claim 1, wherein the organosilicon compound has an Si—O—R bond, where R is selected from the group consisting of alkyl, allyl and aryl groups.
- 4. The method of claim 1, wherein the organosilicon compound is selected from the group consisting of hex-amethyldisiloxane, methyltrialkoxysilane, dimethyldialkoxysilane, trimethylalkoxysilane, tetramethylsilane and a mixture thereof.
- 5. The method of claim 1, wherein the plasma polymerization is conducted at a temperature of 350° C. or more.
- 6. The method of claim 1, wherein the plasma polymerization is conducted within an environment in which an oxidizing agent is contained.
- 7. The method of claim 6, wherein the oxidizing agent is nitrogen monoxide.
- 8. The method of claim 6, wherein the mass of the oxidizing agent contained is equal to or less than its chemical equivalent for the organosilicon compound.
- 9. The method of claim 1, wherein the interlayer dielectric film is formed by heating the organic/inorganic hybrid film to a temperature higher than a temperature set for the plasma polymerization.
- 10. The method of claim 1, wherein an organic compound is contained in the source material.
- 11. The method of claim 1, wherein the organic/inorganic hybrid film has an organosilicon bond.
- 12. The method of claim 1, wherein the plasma polymerization is conducted within an environment, in which a vacuum has a pressure of 650 Pa or more containing a dilute gas.
- 13. The method of claim 12, wherein the dilute gas is nitrogen gas.
- 14. The method of claim 9, wherein the interlayer dielectric film, having a porous structure is formed by the heating process.
- 15. The method of claim 10, wherein the organic compound is selected from the group consisting of methane, ethane, propane, butane, benzene, hexane or decahydronaphthalene.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-208552 |
Jul 1999 |
JP |
|
Parent Case Info
This application is a divisional of Application Ser. No. 09/625,187, filed Jul. 21, 2000, which is now U.S. Pat. No. 6,458,720.
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