Claims
- 1. A method for heat sinking a controlled collapse chip connection device, the method comprising the steps of:
- a) fabricating a thermal mating area on the controlled collapse chip connection device;
- b) combining graphite and an organic compound to produce a graphite composite heat sink that has a thermal expansion coefficient that substantially matches a thermal expansion coefficient of the controlled collapse chip connection device;
- c) positioning the graphite composite heat sink in a proximate location to the thermal mating area of the controlled collapse chip connection device; and
- d) thermally bonding the graphite composite heat sink to the thermal mating area.
- 2. The method of claim 1, wherein step (a) further comprises the step of fabricating the thermal mating area in a solderable pattern.
- 3. The method of claim 2, further comprising the step of matching the solderable pattern of the thermal mating area with a solderable pattern of the graphite heat sink to produce matched solderable patterns.
- 4. The method of claim 3, further comprising the step of soldering the graphite heat sink to the thermal mating area via the matched solderable patterns.
- 5. The method of claim 1, wherein the thermal bonding of step (d) further comprises the step of using an epoxy composition to thermally bond the graphite heat sink to the thermal mating area.
- 6. The method of claim 1, wherein the organic compound is polystyrene or phenolic.
- 7. The method of claim 1, wherein step (b) comprises the step of vacuum filling the graphite with the organic compound to produce the graphite composite heat sink.
- 8. The method of claim 1, wherein the controlled collapse chip connection device comprises a silicon composition.
- 9. The method of claim 1, wherein the controlled collapse chip connection device comprises a gallium arsenide composition.
Parent Case Info
This is a continuation of application Ser. No. 08/100,232, filed Aug. 2, 1993 and now abandoned.
US Referenced Citations (12)
Continuations (1)
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Number |
Date |
Country |
Parent |
100232 |
Aug 1993 |
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