1. Field of the Invention
The present invention relates to a method for manufacturing a cantilever structure of a probe card, and more particularly to a method for manufacturing a cantilever structure of a probe card wherein a silicon wafer is used as a mold to form a cantilever structure having various shapes, a microscopic pitch and a high aspect ratio.
2. Description of the Related Art
Generally, one or more dies are formed on a wafer. A wafer-level test should be carried out to find out that the one or more dies are not defective. The wafer-level test is carried out using a probe card having a plurality of cantilever structure having a probe beam, a tip and a bump. The cantilever structures contact a plurality of pads formed on the wafer, and relays a test signal from a tester to the plurality of pads to carry out the test.
As a size of a semiconductor device is reduced, a pitch of the pads is also reduced. Therefore, a distance between the probe tips for carrying out the test by contacting the pads is also drastically reduced. In addition, a number of the probe tips are drastically increased in order to test a large number of dies per test.
Therefore, a need for a probe card including a cantilever structure having various pitched and shapes is increasing.
It is an object of the present invention to provide a method for manufacturing a cantilever structure of a probe card wherein a silicon wafer is used as a mold to form a cantilever structure having various shapes, a microscopic pitch and a high aspect ratio.
In accordance with the present invention, there is provided a method for manufacturing a cantilever structure, comprising steps of: (a) forming a first mask layer pattern defining a probe beam region and a second mask layer pattern defining a bump on first and second surfaces of a first sacrificial substrate, respectively; (b) etching the first sacrificial substrate exposed by the first mask layer pattern and the second mask layer pattern to form the probe beam region and the bump region mutually connected; (c) removing the first mask layer pattern and the second mask layer pattern; (d) bonding the first sacrificial substrate including the probe beam region and the bump region to an insulating substrate; (e) forming a cantilever structure filling the probe beam region and the bump region; and (f) removing the first sacrificial substrate.
The method in accordance with the present invention may further comprise forming an oxide film on a surface of the first sacrificial substrate after carrying out the step (c).
The method in accordance with the present invention may further comprise forming a first bonding layer between the first sacrificial substrate and the insulating substrate.
The method in accordance with the present invention may further comprise forming a probe tip at an end portion of the cantilever structure.
Preferably, the probe tip formation step comprises: forming a third mask layer pattern exposing a probe tip region of the cantilever structure is formed; forming the probe tip in the probe tip region; and removing the third mask layer pattern.
Preferably, the probe tip formation step comprises: forming a fourth mask layer pattern exposing a portion of a second sacrificial substrate corresponding to a probe tip region of the cantilever structure is formed on the second sacrificial substrate; etching the second sacrificial substrate using the fourth mask layer pattern as a mask to form the probe tip region; forming the probe tip in the probe tip region; forming a fifth mask layer pattern exposing the probe tip and an adjacent region; forming a second bonding layer in a region exposed by the fifth mask layer pattern; removing the fifth mask layer pattern; bonding the second bonding layer to the probe tip region of the cantilever structure; and removing the second sacrificial substrate.
It is preferable that each of the first mask layer pattern and the second mask layer pattern comprises a TEOS film.
It is also preferable that the first bonding layer comprises a photoresist film.
Preferably, the insulating substrate comprises one of a ceramic substrate, a glass substrate, an insulating silicon substrate and combinations thereof.
Preferably, the step (e) comprises an electroplating process.
a through 1i are cross-sectional views illustrating a method for manufacturing a cantilever structure of a probe card in accordance with a first embodiment of the present invention.
a through 2l are plane and cross-sectional views illustrating a method for manufacturing a cantilever structure of a probe card in accordance with a second embodiment of the present invention.
The present invention will now be described in detail with reference to the accompanied drawings. The interpretations of the terms and wordings used in Description and Claims should not be limited to common or literal meanings. The embodiments of the present invention are provided to describe the present invention more thoroughly for those skilled in the art.
a through 1i are cross-sectional views illustrating a method for manufacturing a cantilever structure of a probe card in accordance with a first embodiment of the present invention.
Referring to
Thereafter, a first mask layer pattern 100a defining a probe beam region 120 and a second mask layer pattern 100b defining a bump are formed on the first surface and the second surface of the first sacrificial substrate 100, respectively via a photolithography and etching process.
Referring to
Thereafter, the first mask layer pattern 100a and the second mask layer pattern 100b are removed to expose the surfaces of the first sacrificial substrate 100.
Referring to
Referring to
Thereafter, the first sacrificial substrate 100 including the probe beam region 120 and the bump region 130 is bonded to the insulating substrate 160. It preferable that the insulating substrate 160 comprises one of a ceramic substrate, a glass substrate, an insulating silicon substrate and combinations thereof.
Referring to
Referring to
Referring to
Referring to
a through 2e are plane and cross-sectional views illustrating a method for manufacturing a cantilever structure of a probe card in accordance with a second embodiment of the present invention.
Referring to
Thereafter, a first mask layer pattern 100a defining a probe beam region 120 and a second mask layer pattern 100b defining a bump are formed on the first surface and the second surface of the first sacrificial substrate 100, respectively via a photolithography and etching process.
Referring to
Thereafter, the first mask layer pattern 100a and the second mask layer pattern 100b are removed to expose the surfaces of the first sacrificial substrate 100.
Referring to
Referring to
Thereafter, the first sacrificial substrate 100 including the probe beam region 120 and the bump region 130 is bonded to the insulating substrate 160. It preferable that the insulating substrate 160 comprises one of a ceramic substrate, a glass substrate, an insulating silicon substrate and combinations thereof.
Referring to
Referring to
Referring to
Referring to
Thereafter, a second bonding layer 240 is formed in a region exposed by the fifth mask layer pattern 230.
Referring to
Referring to
As described above,
Number | Date | Country | Kind |
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10-2007-0014478 | Feb 2007 | KR | national |
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Number | Date | Country | |
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20080190885 A1 | Aug 2008 | US |