Claims
- 1. An electron beam exposure method for selectively exposing a target to a desired pattern through irradiating of the target surface with an electron beam comprising the steps of:
- exposing the area of the target surface corresponding to either a pattern or a background other than the pattern with an electron beam; and
- exposing an area of the target surface other than the afore-said area with an electron beam;
- the exposure of the pattern area at a predetermined first dose being performed by setting first unit of exposed area, having a certain size constituting the pattern and using an electron beam having a first spot size corresponding to said first unit of exposed area; and wherein
- the exposure of the background area at a predetermined second dose is controlled by a stored pattern which is stored by using a fewer number of bits to define the exposed surface than is used to define the exposed surface during the exposure of the pattern area and wherein said background exposure is performed by setting the second unit of exposed area, having N (N>1) times the size of the first unit of exposed area.
- 2. The electron beam exposure method according to claim 1, wherein N is in the range of 2.ltoreq.N.ltoreq.8.
- 3. The electron beam exposure method according to claim 8, wherein pattern area segments smaller than the second unit of exposed area when the pattern area is defined by second unit of exposed area for the exposure of the background area are included in the background area.
- 4. The electron beam exposure method according to claim 1, wherein pattern area segments smaller than the second unit of exposed area when the pattern area is defined by second unit of exposed area for the exposure of the background area are not included in the background area.
- 5. The electron beam exposure method according to claim 1, wherein said electron beam has a variable shape.
- 6. The electron beam exposure method according to claim 1, wherein said electron beam is used for raster scanning.
- 7. The electron beam exposure method according to claim 1, wherein said electron beam is used for vector scanning.
Priority Claims (2)
Number |
Date |
Country |
Kind |
59-211965 |
Oct 1984 |
JPX |
|
60-194115 |
Sep 1985 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 784,048 filed on Oct. 4, 1985, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4264711 |
Greeneich |
Apr 1981 |
|
4463265 |
Owen et al. |
Jul 1984 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
0097417 |
Apr 1983 |
EPX |
2755399 |
Dec 1976 |
DEX |
59-921 |
Jan 1984 |
JPX |
Non-Patent Literature Citations (3)
Entry |
IBM Technical Disclosure Bulletin, vol. 25, No. 3A, Aug. 1982, p. 986, New York, US; N. G. Anantha et al.: "Proximity Correction In E--Beam Systems". |
Journal of Vacuum Science & Technology, "Data Composition Method for Raster--Scan Exposure System", Masahiko Sumi et al. vol. 16, No. 6, Nov./Dec. 1979, pp. 1809-1813. |
G. Owen and P. Rissman J. Application Phys. 54(6) Jun., 1983. |
Continuations (1)
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Number |
Date |
Country |
Parent |
784048 |
Oct 1985 |
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