Claims
- 1. A process for fabricating an infrared imager comprising the steps of:
- (a) oxidizing the surface of a monocrystalline ternary alloy semiconductor body to form an oxide layer 500-1000 angstroms thick;
- (b) selectively removing predetermined portions of said oxide layer to form apertures therein;
- (c) forming suitable doped regions in said apertures to form junction diodes with the ternary alloy semiconductor surface;
- (d) depositing a layer of zinc sulfide to cover the oxide-conductor composite layer;
- (e) depositing and patterning a channel-stop conductor on said zinc sulfide to define a channel;
- (f) depositing and patterning a second zinc sulfide layer to overlap said channel-stop conductor;
- (g) depositing and patterning a first plurality of metal gates on said second zinc sulfide layer;
- (h) depositing a third layer of zinc sulfide to cover said gate;
- (i) depositing and patterning a second plurality of metal gates on said third zinc sulfide layer;
- (j) selectively removing portions of each zinc sulfide layer to form contact vias exposing selected gate and substrate locations; and
- (k) then forming conductive contacts to said exposed locations.
- 2. A method as in claim 1 wherein said ternary alloy semiconductor is oxidized by anodization.
- 3. A method as in claim 1 wherein said patterning steps are done by inverse photoresist processing.
- 4. A method as in claim 1 wherein said junction diodes are formed by selectively out-diffusing the more volatile element from the ternary alloy semiconductor surface.
- 5. A method as in claim 1 wherein said conductors and gates are aluminum.
Parent Case Info
This is a division of application Ser. No. 950,191, filed Oct. 10, 1978, now U.S. Pat. No. 4,231,149.
US Referenced Citations (5)
Non-Patent Literature Citations (2)
Entry |
Anderson, "Tunnel Current--Infrared Charge Coupled Devices" Infrared Physics, vol. 17, No. 2, Mar. 1977, pp. 147-164. |
Chapman et al, "HgCdTe Charge-Coupled Device Shift Registers", Applied Phys. Letters, vol. 32 (7), Apr. 1, 1978, pp. 434-436. |
Divisions (1)
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Number |
Date |
Country |
Parent |
950191 |
Oct 1978 |
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