Method of fabricating semiconductor device

Abstract

A semiconductor device and a method of fabricating a semiconductor device that includes forming an interlayer insulating film on a semiconductor substrate; depositing a first soft magnetic thin film on the interlayer insulating film through sputtering using a target containing at least one of Fe, Co, Ni, or alloys thereof, the target further containing at least one of Ti, Hf, or B, the sputtering being performed using an N2 reactive gas; forming a metal film on the first soft magnetic thin film; depositing a second soft magnetic thin film on the metal film through sputtering using the same or another target containing at least one of Fe, Co, Ni, or alloys thereof, the target further containing at least one of Ti, Hf, or B, the sputtering being performed using an N2 reactive gas; and patterning to form an inductor.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the invention will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:

FIG. 1 illustrates a cross-sectional view of a preferred embodiment of a semiconductor device of the invention;

FIGS. 2 to 5 illustrate sequential cross-sectional views for a process of fabricating a semiconductor device, according to a preferred embodiment of the invention;

FIG. 6 illustrates a schematic, perspective view of an inductor according to a preferred embodiment of the invention; and

FIG. 7 illustrates a graph of results from a simulation of quality factor (Q) for a semiconductor device according to a preferred embodiment of the invention.

Claims

1. A method of fabricating a semiconductor device, comprising: forming an interlayer insulating film on a semiconductor substrate;depositing a first soft magnetic thin film on the interlayer insulating film through sputtering using a target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N2 reactive gas;forming a metal film on the first soft magnetic thin film;depositing a second soft magnetic thin film on the metal film through sputtering using the same or another target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N2 reactive gas; andpatterning the first soft magnetic thin film, the metal film, and the second soft magnetic thin film, which are laminated, using a same mask, to form an inductor.

2. The method as claimed in claim 1, wherein the first soft magnetic thin film and the second soft magnetic thin film each have a thickness of about 5,000-10,000 Å.

3. The method as claimed in claim 1, wherein the metal film comprises aluminum or copper.

4. The method as claimed in claim 1, wherein the depositing of the first soft magnetic thin film and the depositing of the second soft magnetic thin film are conducted using a target comprising Fe, Co and Ti.

5. The method as claimed in claim 1, wherein the interlayer insulating film comprises SiOx, SiON, TiOx or TaOx.

6. A method of fabricating a semiconductor device, the method comprising: forming an interlayer insulating film having a plurality of lower wire layers on a semiconductor substrate;depositing a first soft magnetic thin film on the interlayer insulating film through sputtering using a target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N2 reactive gas;forming an uppermost metal wire layer on the first soft magnetic thin film;depositing a second soft magnetic thin film on the uppermost metal wire layer through sputtering using the same or another target comprising at least one of Fe, Co, Ni, or alloys thereof, the target further comprising at least one of Ti, Hf, or B, the sputtering being performed using N2 reactive gas; andpatterning the first soft magnetic thin film, the uppermost metal wire layer, and the second soft magnetic thin film, which are laminated, using a same mask, thus forming an inductor and the uppermost wire layer coupled with at least one of the lower wire layers.

7. The method as claimed in claim 6, wherein the first soft magnetic thin film and the second soft magnetic thin film each have a thickness of about 5,000-10,000 Å.

8. The method as claimed in claim 6, wherein the uppermost wire layer comprises aluminum or copper.

9. The method as claimed in claim 6, wherein the depositing the first soft magnetic thin film and the depositing the second soft magnetic thin film are conducted using a target comprising Fe, Co and Ti.

10. The method as claimed in claim 6, wherein the interlayer insulating film comprises SiOx, SiON, TiOx or TaOx.

11. A semiconductor device, comprising: an interlayer insulating film formed on a semiconductor substrate; andan inductor provided on the interlayer insulating film, the inductor comprising:a first soft magnetic thin film pattern formed on the interlayer insulating film, the first soft magnetic film comprising: a) at least one material selected from Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B, and c) N;a metal film pattern on the first soft magnetic thin film pattern; anda second soft magnetic thin film pattern on the metal film pattern, the second soft magnetic thin film pattern comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B; and c) N.

12. The semiconductor device as claimed in claim 11, wherein the first soft magnetic thin film pattern and the second soft magnetic thin film pattern are each about 5,000-10,000 Å thick.

13. The semiconductor device as claimed in claim 11, wherein the metal film comprises aluminum or copper.

14. The semiconductor device as claimed in claim 11, wherein the first soft magnetic thin film and the second soft magnetic thin film comprise FeTiN.

15. The semiconductor device as claimed in claim 11, wherein the interlayer insulating film comprises SiOx, SiON, TiOx or TaOx.

16. A semiconductor device, comprising: an interlayer insulating film on a semiconductor substrate and having a plurality of lower wire layers; andan inductor and an uppermost wire layer coupled with a lower wire layer on the interlayer insulating film, the inductor and the uppermost wire layer each comprising a first soft magnetic thin film pattern which is formed on the interlayer insulating film, the first soft magnetic film pattern comprising: a) at least one of Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B; and c) N;a metal film pattern formed on the first soft magnetic thin film pattern; anda second soft magnetic thin film pattern formed on the metal film pattern, the second soft magnetic film pattern comprising: a) at least one of Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B; and c) N.

17. The semiconductor device as claimed in claim 16, wherein the first soft magnetic thin film pattern and the second soft magnetic thin film pattern each are about 5,000-10,000 Å thick.

18. The semiconductor device as claimed in claim 16, wherein the metal film comprises aluminum or copper.

19. The semiconductor device as claimed in claim 16, wherein the first soft magnetic thin film and the second soft magnetic thin film comprise FeTiN.

20. The semiconductor device as claimed in claim 16, wherein the interlayer insulating film comprises SiOx, SiON, TiOx or TaOx.