Claims
- 1. A method of forming and removing a resist pattern, comprising
- forming a bottom resist layer on a substrate,
- selectively forming an upper resist layer containing germanium on said bottom resist layer,
- etching the bottom resist layer by an anisotropic oxygen etching using said upper resist layer as a mask to form a resist pattern, and
- removing said upper resist layer with an acid having an oxidizing power, wherein the acid is peroxosulfuric acid or fuming nitric acid.
- 2. A method of forming and removing a resist pattern in accordance with claim 1, wherein said upper resist layer is formed of a negative resist comprising an alkali-soluble organic germanium polymer and a bisazide compound.
- 3. A method of forming and removing a resist pattern in accordance with claim 1, wherein said upper resist layer is formed of a negative resist comprising an organic germanium polymer having a polymerizable group in a molecule and a polymerization initiator.
- 4. A method of forming and removing a resist pattern in accordance with claim 1, wherein said upper resist layer is formed of a positive resist comprising an alkali-soluble organic germanium polymer and a photosensitive dissolution-inhibiting agent.
- 5. A method of forming and removing a resist pattern in accordance with claim 1 wherein said upper resist layer is formed of a positive resist comprising an alkali-soluble organic germanium compound, an alkali-soluble organic polymer and a photosensitive dissolution-inhibiting agent.
- 6. A method of forming and removing a resist pattern in accordance with claim 1, wherein said upper resist layer is formed of a positive resist comprising an alkali-soluble organic germanium polymer, a dissolution-inhibiting agent which is decomposed by an acid catalyst to change alkali-soluble and a photosensitive acid-generating agent.
- 7. A method of forming and removing a resist pattern in accordance with claim 1, wherein said upper resist layer is formed of a positive resist comprising an organic germanium polymer which is decomposed by an acid catalyst to change alkali-soluble and a photosensitive acid-generating agent.
- 8. A method of forming and removing a resist pattern in accordance with claim 1, wherein said upper resist layer is formed of a positive resist comprising a germanium-containing main chain decomposition-type compound.
- 9. A method of forming and removing a resist pattern in accordance with claim 1, wherein the bottom resist layer comprises novolac resin and naphthoquinone diazide.
Priority Claims (4)
Number |
Date |
Country |
Kind |
2-70495 |
Mar 1990 |
JPX |
|
2-70498 |
Mar 1990 |
JPX |
|
2-124217 |
May 1990 |
JPX |
|
2-318332 |
Nov 1990 |
JPX |
|
Parent Case Info
This application is a Divisional application of application Ser. No. 07/667,986, filed Mar. 12, 1991, now U.S. Pat. No. 5,252,433.
US Referenced Citations (5)
Divisions (1)
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Number |
Date |
Country |
Parent |
667986 |
Mar 1991 |
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