1. Field of the Invention
The present invention relates to a method of forming a resist pattern with high water-repellency required in liquid immersion exposure and high film-peeling suppression effect, and a semiconductor device manufactured with that method.
2. Description of the Background Art
In forming a resist pattern with liquid immersion type exposure, an apparatus structured as shown in
In liquid immersion type exposure, a film of water (meniscus) is formed in a small gap between the lens and the wafer by utilizing surface tension of water, so that a high index of refraction is achieved between the lens and the wafer which is the irradiated surface. In exposing a wafer peripheral portion to light using the liquid immersion apparatus of a meniscus-forming-type, such a defective shot that a part of the meniscus extends off the wafer.
In a case of the defective shot as shown in
Thus, in order to lift a liquid upward by utilizing capillarity, a surface of a capillary that comes in contact with water should be water-repellent and an angle of contact should be great.
With such a conventional method, however, water repellency of a beveled portion remains at a level attained by the HMDS treatment and an angle of contact against water is approximately 60°. Therefore, water-repellency may be insufficient. In addition, as treatment with HMDS can be directed only to treatment of the processed film before formation of various types of coating films, and the treatment is premised on treatment of the entire surface of the wafer. Therefore, water-repellency to such an extent as not affecting pattern formation could only be provided. In addition, in order to maintain water-repellency at the wafer outer peripheral portion, removal at edge (hereinafter referred to as edge removal) of a resist or the like around the wafer outer periphery is restricted, and measures against dust production are limited. Moreover, it is only adhesion between the processed film and a coating film directly on the same that can be improved in order to suppress peeling, and such an improvement is not sufficient as an effect to suppress a pattern defect caused by film peeling. Foreign matters produced by peeling from a wafer edge float due to convection of the liquid for liquid immersion during liquid immersion exposure and a pattern defect may be induced. Further, in the conventional water-repellent treatment, water-repellent treatment of the entire surface of the wafer may adversely affect a step of exposure to light, and a method of providing preferred water-repellency to the entire surface has not been studied.
An object of the present invention is to provide a method of forming a resist pattern with sufficiently high water-repellency required in liquid immersion exposure and high film-peeling suppression effect, and a semiconductor device manufactured with that method.
According to one embodiment of the present invention, a method of forming a resist pattern through liquid immersion exposure in which exposure is performed such that a liquid film is formed between a substrate for a semiconductor device on which a processed film is formed and an objective lens arranged above the substrate is provided, and the substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light. In addition, according to another embodiment of the present invention, a semiconductor device manufactured with such a method of forming a resist pattern is provided.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
A method of forming a resist pattern according to the present invention is characterized in that, in a method of forming a resist pattern through liquid immersion exposure, a substrate treated with a water-repellent agent solution composed of at least a water-repellent agent and a solvent is exposed to light. By treating a wafer with the water-repellent agent solution in a liquid state, strong water-repellency can be achieved. Therefore, an effect to suppress spill of a liquid for liquid immersion utilizing strong capillarity can be enhanced. In the conventional HMDS treatment, an angle of contact against water remains around 60°, and water-repellency to such an extent as not affecting pattern formation could only be obtained. According to the present invention, however, water-repellent treatment strong enough to achieve an angle of contact against water of approximately 80° or greater is possible. Therefore, according to the method of forming a resist pattern of the present invention, collapse of meniscus and contamination of a back surface of the substrate is prevented, and a high-quality semiconductor device free from a pattern defect due to defocusing caused by foreign matters on the back surface of the wafer can be provided. In liquid immersion lithography, in order to avoid organic contamination by a liquid for liquid immersion, a top coat layer soluble in a developer may be formed on a photosensitive resist layer. The top coat layer soluble in a developer is generally water-repellent. Therefore, when the top coat layer covers an outermost surface, such a structure is relatively advantageous to liquid spill during liquid immersion exposure at a wafer peripheral portion. On the other hand, when the top coat layer soluble in a developer is not used in view of cost or the like, the water-repellent treatment method according to the present invention is particularly effective.
If water-repellent treatment affects resist coating performance and adversely affects pattern formation, only the outer peripheral portion of the wafer, where a defective shot is produced and from which a semiconductor chip cannot be obtained, should selectively be made water-repellent. According to the method of the present invention, as an agent used for water-repellent treatment is in a liquid state, only the outer peripheral portion of the wafer can selectively be subjected to water-repellent treatment, for example, by spraying a water-repellent treatment agent only to the outer peripheral portion of the wafer. In addition, as such a treatment is directed to the outer peripheral portion of the wafer that does not affect patterning, water-repellent treatment strong enough to achieve an angle of contact against water of approximately 80° or greater can be performed. In many cases, the outer peripheral portion of the wafer is subjected to edge removal as measures against dust production. In a multi-layer resist process, various edge removal forms may be required depending on a process. According to the conventional method, when edge removal is arbitrarily performed, a hydrophilic surface may be exposed at the outermost surface and therefore a degree of freedom in edge removal has been low. According to the present invention, however, the water-repellent treatment agent is selectively sprayed to and brought in contact with only the outer peripheral portion of the wafer from which a semiconductor product cannot be manufactured, so that the outermost surface can be made water-repellent with respect to every edge removal form.
If the lower organic film layer, the silicon-containing intermediate layer, and the photosensitive resist layer are to be formed on the substrate, these layers are preferably formed with the multi-layer resist method including the step of spin-coating the substrate with these layers, and treatment with a water-repellent agent solution is preferably performed at any timing of at least: in all intervals between the steps of spin-coating; before first spin-coating; and after last spin-coating. According to such treatment, unlike the conventional example where adhesion only between the processed film and the lower organic film layer directly thereon is improved, adhesion between the films in a multi-layer resist structure can be improved. In addition, peeling can be suppressed by selectively subjecting only the wafer outer peripheral portion where peeling is likely during liquid immersion exposure and adhesion is required to treatment with the water-repellent agent solution such as a silane coupling agent, without affecting a pattern formation region. An effect to strengthen adhesion can be obtained by employing the silane coupling agent as the water-repellent agent. Similarly, a photolithography step including the step of spin-coating the substrate with the photosensitive resist layer is further preferred, in terms of higher adhesion between the substrate and the photosensitive resist layer formed on the substrate, higher adhesion between the photosensitive resist layer and the top coat layer formed on the photosensitive resist layer, and suppression of peeling during liquid immersion exposure. In the photolithography step, treatment with the water-repellent agent solution containing a silane coupling agent or the like is preferably performed at any timing of at least: in all intervals between the steps of spin-coating; before first spin-coating; and after last spin-coating.
The processed film to be formed under the resist film for photolithographic patterning for forming the resist pattern is not particularly limited, and normally, the processed film is implemented by an inorganic film such as polysilicon, a silicon oxide film, a silicon nitride film, and an amorphous carbon film formed with CVD, or a film having a lower inorganic anti-reflection film formed thereon. The water-repellent treatment is performed on the outermost surface that comes in contact with water during liquid immersion exposure, out of the surface of the processed film serving as an underlying layer of the resist film for photolithographic patterning, and the film formed by stacking the lower organic film layer, the silicon-containing intermediate layer and the photosensitive resist layer formed on the substrate. In addition, the water-repellent treatment is not a treatment in vapor-phase but it is a treatment for providing water-repellency to a treated surface by spraying a liquid or by immersion in a liquid, the liquid being a water-repellent agent solution. Moreover, treatment by using a solution containing a silane coupling agent as the water-repellent agent solution (adhesion-strengthening treatment) that can be performed in a similar manner to water-repellent treatment can provide adhesion.
The entire surface of the wafer may also be made water-repellent, for example, by forming a liquid film by paddling a treatment solution composed of a water-repellent agent solution containing at least one water-repellent agent, with the use of an apparatus shown in
If water-repellent treatment of the entire surface of the wafer is restricted, a method of locally performing water-repellent treatment or the like is available, with a water-repellent treatment area being limited to a side surface and a peripheral portion of a top surface and a peripheral portion of a bottom surface of the wafer except for the portion to be patterned (hereinafter collectively also referred to as “outer peripheral portion”). As shown in
The peripheral portion of the bottom surface of the wafer can also be subjected to water-repellent treatment by spraying the water-repellent agent solution or the like from the back surface side. By making the bottom surface water-repellent, influence by foreign matters on an exposure apparatus stage due to reaching of the liquid for liquid immersion to the bottom surface during liquid immersion exposure or the like can be eliminated. A back rinse nozzle for removing a coating film according to an existing technique may be used as it is as that nozzle for making the back surface water-repellent, or if a nozzle other than a nozzle for back rinse is to be used separately, an additional back rinse nozzle is simply provided. An area that should be subjected to water-repellent treatment is the outermost surface of a portion producing force to lift water through capillarity and a portion at the wafer edge where the surface does not extend horizontally. It is a beveled portion of a wafer base itself at a short distance from an outer frame of the stage that most affects capillarity, however, a non-horizontal portion of the coating film inside that portion should desirably be made water-repellent. Therefore, it is not necessary to make the wafer center portion water-repellent, but a prescribed region in the wafer outer peripheral portion should only be made water-repellent.
As water-repellent treatment is performed using the edge rinse mechanism of a coating apparatus, a minimum value of a region to be made water-repellent is determined depending on positioning accuracy of edge rinse (approximately 0.2 mm to 0.3 mm). In addition, a maximum value is determined such that the number of effective chips (marked with a circle) in an edge exposure shot is not decreased as seen in the enlarged view of the wafer edge in
A water-repellent agent of fluorines, a water-repellent agent of silicones, a water-repellent agent of fluorines and silicones, a silane coupling agent, a silylation agent, an alkylating agent, or an acylation agent may be used as the water-repellent agent. A single agent or a mixture of two or more of the above may be employed. In any case, a water-repellent agent is diluted with a solvent suitable for each water-repellent agent to attain a concentration of 0.5 mass % to 5.0 mass % for use. Examples of the water-repellent agents include those shown with Formula (1) and Formula (2) below. In order to avoid hydrolysis of the water-repellent agent, the solvent to be used is dehydrated through distillation, use of an absorbent, or use of a moisture-removing filter, to such an extent that moisture is preferably not higher than 50 ppm and more preferably not higher than 30 ppm. Here, an amount of moisture can be determined by Karl Fischer method.
Exemplary water-repellent agent of fluorines, water-repellent agent of silicones, and water-repellent agent of fluorines and silicones are as follows.
(In Formula (1), R1, R2 and R3 represent H, CH3, C2H5, or C3H7, n represents an integer from 0 to 5, R represents CmF2m+1 or CmH2m+1, and m represents an integer from 0 to 10.)
(In Formula (2), R1, R2, and R3 represent (CH2)n—CmF2m+1, n represents an integer from 0 to 5, m represents an integer from 0 to 10, R0 represents H, CkH2k+1, Si(OCH3)3, Si(OC2H5)3, Si(OC3H7)3, or the same structure as the structure on the right of NH bond (SiR1R2R3), and k represents an integer from 1 to 3.)
Where the entire surface of the wafer is subjected to water-repellent treatment, in a case of the water-repellent agent of fluorines, interaction with the wafer may not be sufficient and suppression of pattern toppling may be insufficient. Where the compound shown with Formula (2) above containing alkyl group or epoxy group is used as the water-repellent agent, adhesion can be improved, and improvement in adhesion is greater than conventional treatment using HMDS or the like. Consequently, an effect to suppress pattern toppling is significantly improved. In Formula (2) above, amino group is preferably located at the terminal.
A silylation agent may also be employed as the water-repellent agent. For example, BSA (N,O-bis(trimethylsilyl)acetamide), BSTFA (N,O-bis(trimethylsilyl)trifluoroacetamide), HMDS (hexamethyldisilazane), MSTFA (N-methyl-N-trimethylsilyl-trifluoroacetamide), TMCS (trimethylchlorosilane), TMSI (N-trimethylsilylimidazole), DMSDMA (dimethylsilyldimethylamine), or the like is employed as the silylation agent.
A silane coupling agent may mainly be used as a water-repellent agent having adhesion-strengthening effect. In addition, some silane coupling agents exhibit water-repellent treatment performance. A propoxysilane derivative is effective as the agent having high water-repellent treatment performance, because it is slow in hydrolysis in water. Examples of silane coupling agents include vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, (aminoethyl)3-aminopropylmethyldimethoxysilane, N-2(aminoethyl)3-aminopropyltrimethoxysilane, N-2(aminoethyl)3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, N-(vinylbenzyl)-2-aminoethyl-3-aminopropyltrimethoxysilane, 3-ureidepropyltriethoxysilane, 3-chloropropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis(triethoxysilylpropyl)tetrasulfide, 3-isocyanatepropyltriethoxysilane, and the like, and among these, a substance in which methoxysilane or ethoxysilane is substituted with propoxysilane is effective as the water-repellent agent. In adhesion-strengthening treatment, a highly reactive methoxysilane derivative is preferred. In order to avoid hydrolysis of the water-repellent agent solution containing the silane coupling agent, a solvent to be used is dehydrated through distillation, use of an absorbent, or use of a moisture-removing filter, to such an extent that moisture is preferably not higher than 50 ppm and more preferably not higher than 30 ppm.
Pentafluorobenzyl bromide, 1,4,7,10,13,16-hexaoxacyclooctadecane, or the like is employed as an alkylating agent. In addition, PFPA (pentafluoropropionic acid anhydride), HFBA (anhydrous heptafluorobutyric acid), acetic anhydride, or the like is employed as an acylation agent. If an organic film such as the lower organic film layer and the photosensitive resist layer included in the multi-layer resist is to be subjected to water-repellent treatment, a water-repellent agent solution obtained by dissolving a compound having a structure as shown in Formula (3) or Formula (4) below in a solvent not dissolving the organic film by a ratio of 0.5 mass % to 5.0 mass % is desirably employed.
(In Formula (3), R1, R2 and R3 represent methoxy group, ethoxy group, propoxy group, or acetoxy group, n represents an integer from 0 to 5, and functional group Y represents vinyl group, epoxy group, methacryl group, amino group, mercapto group, styryl group, acryloxy group, ureide group, chloropropyl group, sulfide group, isocyanate group, or alkoxy group.)
(In Formula (4), R represents CmF2m+1 or CmH2m+1, m represents an integer from 0 to 10, n represents an integer from 0 to 5, and functional group Y represents vinyl group, epoxy group, methacryl group, amino group, mercapto group, styryl group, acryloxy group, ureide group, chloropropyl group, sulfide group, isocyanate group, or alkoxy group.)
Based on the above, Table 1 exemplifies preferred combination of water-repellent agents, separately for inorganic films and organic films that are materials to be treated. On the other hand, Table 2 exemplifies preferred solvents, in which the solvents being categorized into a solvent dissolving a multi-layer resist layer, a solvent not dissolving a multi-layer resist layer, and a solvent not dissolving either a top coat layer soluble in a developer. In addition, a solvent dissolving a coating film before curing with heat is preferably selected in treatment of an exposed substrate simultaneous with edge rinse. Moreover, when a coating film is to be treated but edge rinse is not performed, a solvent not dissolving the coating film is preferably selected. On the other hand, heat treatment after coating is performed immediately after the treatment, an ethoxy silanol derivative or a propoxy silanol derivative is preferred as the silane coupling agent, in terms of lower hydrolytic characteristic and improved hydrophobicity. If coating treatment is performed instead of heat treatment immediately after the treatment, a methoxy silanol derivative that reacts at room temperature is preferred. In order to obtain both effects of Water repellency and adhesion-strengthening of the water-repellent agent with a single type of solution, a liquid mixture of the water-repellent agent having a structure as shown in Formula (1) and a moderately reactive silane coupling agent of ethoxy silanols is suitably used. Moreover, as the water-repellent agent having a structure shown in Formula (2) and a compound of silazanes used as a silylation agent generate ammonia as a by-product, attention should be paid to patterning. Further, mixing two or more types of water-repellent agents for use as above is preferred, because a highly versatile, water-repellent and adhesion-strengthening material can be obtained by ensuring reactivity with various substrates.
When importance is placed on reactivity at room temperature, methoxy silanol is preferred.
When importance is placed on versatility, ethoxy silanol is preferred.
A method of improving adhesion between layered films in order to suppress a pattern defect induced by peeling during liquid immersion exposure of stacked films in the multi-layer resist method will now be described.
The water-repellent treatment is continuously performed without unloading from a coating cup and heat treatment. The silicon-containing intermediate layer has been cured under heat by this time point and it is not dissolved in the solvent. In next water-repellent treatment, the photosensitive resist layer is subjected to edge rinse, and at the same time, the entire exposed surface of the photosensitive resist and the films under the same should be made water-repellent. As both of the inorganic film and the organic film are present at the surface to be subjected to water-repellent treatment, a solution mixture of Formulae (1), (2) and (3) or the silane coupling agent containing propoxy silanol or ethoxy silanol is desirably used as the water-repellent agent. In addition, any compound is diluted with a solvent to attain a concentration of 0.5 mass % to 5.0 mass % for use, however, a solvent having excellent edge rinse characteristic should be used from among solvents of alcohols, solvents of acetates, solvents of ketones, and the like. The water-repellent agent is adsorbed on the surface subjected to water-repellent treatment, and a monomolecular layer of the water-repellent agent is formed as a result of chemical reaction. Thus, spill of the liquid for liquid immersion can be avoided. After liquid immersion exposure is completed and the photosensitive resist development step and the etching step are performed, ashing using oxygen plasma and wet treatment using a liquid mixture of sulfuric acid and hydrogen peroxide solution are performed in order to remove the resist. Here, the water-repellent layer (water-repellent and adhesion-strengthening layer 3a) is peeled off.
In addition, in any example described above, other additives or the like may be added to the water-repellent agent solution or the like so long as the effect of the present invention is not impaired. In order to control water-repellent performance and adhesive performance of the water-repellent agent, at least one of water, acid and alkali is preferably contained in each solution to be used. The acid is not particularly limited, however, examples of acids are alkyl carboxylic acid such as acetic acid, and aromatic carboxylic acid. Moreover, though alkali is not particularly limited, organic amine such as tetramethylammonium hydroxide (TMAH) or the like can be employed. Acid and alkali are preferably moderately volatile in terms of chemical stability of a prepared agent, and for example, acid and alkali having a boiling point not lower than 100° C. are preferably employed. In the event that a chemical structure changes due to progress of hydrolytic reaction and corresponding oligomerization of the water-repellent agent and consequently desired water-repellency and adhesion are not obtained, the water-repellent agent is dissolved in an undiluted solution (raw material) of such acid or alkali or in an ether solvent in which water such as purified water is controlled preferably to 50 ppm or lower, and a resultant solution is stored. Immediately before use, the stored solution and the solvent of alcohols containing desired water above or the solvent dissolving the resist such as PGMEA are mixed for preparation and use. Though the content of water or the like to be added may be determined in consideration of a type, a concentration or the like of the water-repellent agent or the adhesion-strengthening agent, the content thereof is preferably in a range from 0.01 to 5 mass % with respect to the total treatment solution. If desired water-repellency and adhesion should be maintained during long storage of 1 to 2 months or longer, the content of at least one of water, alkali and acid in the treatment solution above should be controlled more precisely. The content in this case is preferably in a range from 0.04 to 2.7 mass % with respect to the total solution, and in order to suppress fluctuation of each value within a range of ±0.2 mass % during storage, preferably, contact with outside air is cut off and purge with nitrogen in a vessel is performed. If acid or alkali is to be added, an amount of addition thereof is adjusted to attain preferably pH 4 to 10 and further preferably pH 6 to 8.
Where at least one of water, alkali and acid is contained in the water-repellent agent solution, if the content of water or the like is too small, required water-repellent performance may not be obtained in any of an example where such a component is mixed immediately before use and an example where such a component is used after mixing and storage. Alternatively, if the content is too large, hydrolysis excessively proceeds, the solution becomes clouded, and desired water-repellency or adhesive performance may not be obtained. Therefore, if quality should be maintained in particular during long storage, the content of water or the like as above and fluctuation are preferably controlled.
For the water-repellent agent solution not dissolving the resist, a solvent of ethers such as diisoamyl ether or n-butyl ether, a solvent of alcohols such as isoamyl alcohol or isopropanol, or a solution mixture thereof may be employed. If the solution mixture is employed, a mixing ratio should be adjusted in consideration of compatibility with at least any of water, acid and alkali to be contained. For example, the ratio is desirably set as follows: solvent of ethers:solvent of alcohols=approximately 5:5 to 7:3. If long storage as above is required, the content of water or the like and fluctuation are desirably suppressed in the range shown above. If the water-repellent agent solution dissolving the resist is mixed with a solvent for use, the treatment solution should be adjusted in a range the same as above, with the “solvent of alcohols” being replaced with the “solvent dissolving the photosensitive resist.”
If quality of the water-repellent agent solution is not varied despite addition of water or the like, at least any of water, acid and alkali may be contained in advance in the water-repellent agent solution before use, without controlling the content and fluctuation as above. Here, for example, the content is preferably in a range from 0.01 to 5 mass % with respect to the total treatment solution.
The present invention will be described hereinafter in further detail with reference to examples, however, the present invention is not limited thereto.
In order to mainly achieve improvement in water-repellency of an Si wafer, a water-repellent agent solution A including a solvent not dissolving the resist was prepared. In addition, in order to mainly achieve improvement in water-repellency of the Si wafer, a water-repellent agent solution D including the solvent dissolving the resist was prepared. For water-repellent agent solution A, 3,3,3-trifluoropropyltrimethoxysilane (KBM7103 manufactured by Shin-Etsu Chemical Co., Ltd.), tridecafluorohexyltrimethoxysilane (SIT8176-0 manufactured by GELEST Inc.), 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (KBM303 manufactured by Shin-Etsu Chemical Co., Ltd.), a mixture of KBM7103 and KBM303 (mixing ratio 3:1), or a mixture of SIT8176-0 and KBM303 (mixing ratio 3:1) was prepared. Each water-repellent agent was dissolved in diisoamyl ether or n-butyl ether, to prepare a dilute solution at a concentration of approximately 3.0 mass %. On the other hand, for water-repellent agent solution D, KBM7103, KBM303, a mixture of KBM7103 and KBM303 (mixing ratio 3:1), or a mixture of SIT8176-0 and KBM303 (mixing ratio 3:1) was prepared. Each water-repellent agent was dissolved in propyleneglycolmonomethylether acetate (PGMEA), to prepare a dilute solution at a concentration of approximately 3.0 mass %. In order to avoid hydrolysis of the water-repellent agent, the solvent to be used was dehydrated through distillation, use of an absorbent, or use of a moisture-removing filter, to such an extent that moisture was not higher than 50 ppm.
In the present example, water-repellent agent solution A alone was used as the water-repellent agent solution, and water-repellent agent solution D alone was used as the water-repellent agent solution. In addition, in accordance with the process flow in
Thereafter, coating-type organic anti-reflection film 4 was formed to a film thickness from approximately 40 nm to 80 nm, and heating and curing at 200° C. to 250° C. was performed for approximately 1 to 1.5 minute. Thereafter, spin-coating with an ArF chemically-amplified positive resist of methacrylates (film thickness from 100 nm to 200 nm) was performed and bake treatment at 120° C. was performed for 60 seconds, to form photosensitive resist layer 6. In succession, top coat layer 7 soluble in a developer was applied to the resist to a film thickness from approximately 35 nm to 90 nm and bake treatment at 110° C. was performed for 60 seconds, to form the resist film. As described above, only the wafer peripheral portion except for the wafer center portion that affects patterning could be subjected to the water-repellent and adhesion-strengthening treatment.
The substrate coated with the resist was subjected to light exposure treatment in the liquid immersion exposure apparatus, and thereafter, development treatment with 2.38 mass % solution of tetramethylammonium hydroxide was performed, to complete pattern formation. Using the resist film as a mask, the processed film was subjected to plasma dry etching. As to plasma dry etching of the processed film, polysilicon in the step of forming a transistor was subjected to plasma dry etching. After etching was completed, the photosensitive resist layer and the coating-type organic anti-reflection film were removed through O2 plasma ashing and wet treatment using sulfuric acid and hydrogen peroxide solution. Here, it was also confirmed that the previously formed water-repellent layer was peeled off. Thereafter, a silicon oxide film in a contact hole forming step (contact step) was formed, and the present example was repeated with the surface thereof serving as the irradiated surface. Thus, pattern formation in the contact step was completed. Similarly, an interconnection forming step (metal step) and a via step were repeatedly performed to complete a semiconductor device. No spill of the liquid for liquid immersion was observed during liquid immersion exposure in any of the example where water-repellent agent solution A alone was used as the water-repellent agent solution, the example where water-repellent agent solution D alone was used as the water-repellent agent solution, and the example where water-repellent agent solutions A and D were mixed for use as the water-repellent agent solution.
Table 3 and
In the present example, water-repellent agent solution A or a water-repellent agent solution B was employed as the water-repellent agent solution. Water-repellent agent solution A used in Example 1 was also used here. In order to mainly achieve improvement in water-repellency of the organic film, water-repellent agent solution B was prepared by using the solvent not dissolving the resist. As the water-repellent agent, decyltrimethoxysilane (KBM3103C manufactured by Shin-Etsu Chemical Co., Ltd.), KBM7103, or a mixture of KBM3103C and KBM7103 (mixing ratio 1:1) was used. KBM 303 mixed at a mixing ratio of 3:1 with respect to the total mass of the water-repellent agent above was used as the water-repellent agent having adhesion-strengthening effect. Each water-repellent agent was dissolved in diisoamyl ether or n-butyl ether, to prepare a dilute solution at a concentration of 3.0 mass %. In order to avoid hydrolysis of the water-repellent agent, the solvent to be used was dehydrated through distillation, use of an absorbent, or use of a moisture-removing filter, to such an extent that moisture was not higher than 50 ppm.
In the present example, in accordance with the process flow in
After water-repellent layer 3 was formed, light exposure treatment in the liquid immersion exposure apparatus was performed. Here, spill of the liquid for liquid immersion during liquid immersion exposure was not observed. Thereafter, development treatment with 2.38 mass % solution of tetramethylammonium hydroxide was performed, to complete pattern formation. Using the resist film as a mask, the processed film was subjected to plasma dry etching. As to plasma dry etching of the processed film, polysilicon in the step of forming a transistor was subjected to plasma dry etching. In any case, after etching was completed, the resist and the organic anti-reflection film were removed through O2 plasma ashing and wet treatment using sulfuric acid and hydrogen peroxide solution. Here, it was also confirmed that the previously formed water-repellent layer was peeled off. In succession, a silicon oxide film in the contact step was formed, and the present example was repeated with the surface thereof serving as the irradiated surface. Thus, pattern formation in the contact step was completed. Similarly, the metal step and the via step were repeatedly performed to complete the semiconductor device.
In the present example, in accordance with the process flow in
After the water-repellent layer was formed, the substrate was exposed to light in the liquid immersion exposure apparatus. No spill of the liquid for liquid immersion was observed during liquid immersion exposure. Thereafter, development treatment with 2.38 mass % solution of tetramethylammonium hydroxide was performed, to complete pattern formation. Using the resist film as a mask, the processed film was subjected to plasma dry etching. As to plasma dry etching of the processed film, polysilicon in the step of forming a transistor was subjected to plasma dry etching. In any case, after etching was completed, the resist and the organic anti-reflection film were removed through O2 plasma ashing and wet treatment using sulfuric acid and hydrogen peroxide solution. Here, it was also confirmed that the previously formed water-repellent layer was peeled off. Thereafter, a silicon oxide film in the contact step was formed, and the present example was repeated with the surface thereof serving as the irradiated surface. Thus, pattern formation in the contact step was completed. Similarly, the metal step and the via step were repeatedly performed to complete the semiconductor device.
Here, concentration of 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (KBM303) representing the epoxy silane coupling agent was varied between 0 mass % and 2.0 mass % while concentration of tridecafluorohexyltrimethoxysilane (SIT8176-0) was fixed to 3.0 mass %. Consequently, by increasing an amount of epoxy silane coupling agent, adhesion strength could be raised while maintaining an angle of contact at high level.
In the present example, water-repellent agent solution D or a water-repellent agent solution E was employed as the water-repellent agent solution. Water-repellent agent solution D used in Example 1 was also used here. In order to mainly achieve improvement in water-repellency of the organic film, water-repellent agent solution E was prepared by using the solvent dissolving the resist. As the water-repellent agent, decyltrimethoxysilane (KBM3103C manufactured by Shin-Etsu Chemical Co., Ltd.), KBM7103, or the mixture of KBM3103C and KBM7103 (mixing ratio 1:1) was used. As the water-repellent agent having adhesion-strengthening effect, KBM 303 mixed at a mixing ratio of 3:1 with respect to the total mass of the water-repellent agent above was prepared. Each water-repellent agent was dissolved in PGMEA, to prepare a dilute solution at a concentration of 3.0 mass %. In order to avoid hydrolysis of the water-repellent agent, the solvent to be used was dehydrated through distillation, use of an absorbent, or use of a moisture-removing filter, to such an extent that moisture was not higher than 50 ppm.
In the present example, in accordance with the process flow in
Thereafter, light exposure treatment was performed in the liquid immersion exposure apparatus, and spill of the liquid for liquid immersion was not particularly observed. Thereafter, development treatment with 2.38 mass % solution of tetramethylammonium hydroxide was performed, to complete pattern formation. Thereafter, using the resist film as a mask, the processed film was subjected to plasma dry etching. As to plasma dry etching of the processed film, polysilicon in the step of forming a transistor was subjected to plasma dry etching. In any case, after etching was completed, the resist and the organic anti-reflection film were removed through O2 plasma ashing and wet treatment using sulfuric acid and hydrogen peroxide solution. Here, it was also confirmed that the previously formed water-repellent layer was peeled off. Thereafter, a silicon oxide film in the contact step was formed, and the present example was repeated with the surface thereof serving as the irradiated surface. Thus, pattern formation in the contact step was completed. Similarly, the metal step and the via step were repeatedly performed to complete the semiconductor device.
Here, concentration of 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (KBM303) representing the epoxy silane coupling agent was varied between 0 mass % and 2.0 mass % while concentration of tridecafluorohexyltrimethoxysilane (SIT8176-0) was fixed to 3.0 mass %. Consequently, by increasing an amount of epoxy silane coupling agent, adhesion strength could be raised while maintaining an angle of contact at high level.
In the present example, in accordance with the process flow in
Initially, after processed film 2 was formed on substrate 1, lower organic film layer 8 was applied to a film thickness from approximately 150 nm to 300 nm. Then, the solvent was sufficiently volatilized through heating and curing treatment at 200° C. to 250° C. for approximately 1 to 1.5 minute, and polymers were cross-linked as a result of reaction at a heat reaction active site. Thereafter, in order to form silicon-containing intermediate layer 5, spin-coating with a polymer derivative of silsesquioxanes such as inorganic SOG or organic SOG to a film thickness of approximately 80 nm was performed, and the polymer derivatives were cross-linked through dehydration and condensation reaction or reaction at a heat reaction active site such as epoxy functional group through heat treatment at 200° C. to 250° C. for approximately 1 to 1.5 minute.
Thereafter, using the coating cup shown in
Then, spin-coating with an ArF chemically-amplified positive resist of methacrylates (film thickness from 100 nm to 200 nm) was performed, to form photosensitive resist layer 6. Thereafter, the coating cup shown in
Light exposure treatment of the substrate that had been subjected to water-repellent and adhesion-strengthening treatment was performed in the liquid immersion exposure apparatus. As a result, spill of the liquid for liquid immersion was not observed and peeling from the wafer edge due to convection of the liquid for liquid immersion or the like was not observed in any of the example where water-repellent agent solution C alone was used and the example where water-repellent agent solution F alone was used. Thereafter, development treatment with 2.38 mass % solution of tetramethylammonium hydroxide was performed, to complete pattern formation. Using the resist film as a mask, the processed film was subjected to plasma dry etching. As to plasma dry etching of the processed film, polysilicon in the step of forming a transistor was subjected to plasma dry etching. In any case, after etching was completed, the resist and the lower organic film layer were removed through O2 plasma ashing and wet treatment using sulfuric acid and hydrogen peroxide solution. Here, it was also confirmed that the previously formed water-repellent and adhesion-strengthening layer was peeled off.
The present example is an example where the top coat layer does not cover the outermost surface of the wafer.
In the present example, in accordance with the process flow in
Initially, after processed film 2 was formed on substrate 1, lower organic film layer 8 was applied to a film thickness from approximately 150 nm to 300 nm. Then, the solvent was sufficiently volatilized through heating and curing treatment at 200° C. to 250° C. for approximately 1 to 1.5 minute, and polymers were cross-linked as a result of reaction at a heat reaction active site. Thereafter, in order to form silicon-containing intermediate layer 5, spin-coating with a polymer derivative of silsesquioxanes such as inorganic SOG or organic SOG to a film thickness of approximately 80 nm was performed, and the polymer derivatives were cross-linked through dehydration and condensation reaction or reaction at a heat reaction active site such as epoxy functional group through heat treatment at 200° C. to 250° C. for approximately 1 to 1.5 minute.
Thereafter, spin-coating with an ArF chemically-amplified positive resist of methacrylates (film thickness from 100 nm to 200 nm) was performed to form photosensitive resist layer 6, and water-repellent and adhesion-strengthening layer 3a was formed by using the coating cup shown in
As a result of light exposure treatment in the liquid immersion exposure apparatus, spill of the liquid for liquid immersion was not observed with regard to any water-repellent agent solution. In addition, peeling from the wafer edge due to convection of the liquid for liquid immersion or the like was not observed. Thereafter, development treatment with 2.38 mass % solution of tetramethylammonium hydroxide was performed, to complete pattern formation. Using the resist film as a mask, the processed film was subjected to plasma dry etching. As to plasma dry etching of the processed film, polysilicon in the step of forming a transistor was subjected to plasma dry etching. In any case, after etching was completed, the resist and the lower organic film layer were removed through O2 plasma ashing and wet treatment using sulfuric acid and hydrogen peroxide solution. Here, it was also confirmed that the previously formed water-repellent and adhesion-strengthening layer was peeled off.
The water-repellent treatment was performed in line with the procedure as in Example 1 except that the water-repellent agent solution was changed and the entire wafer surface was subjected to water-repellent treatment, and subsequently the semiconductor device was manufactured. In the present example, a treatment solution A was prepared by adding 0.005 ml of ultrapure water to 3 g of solution obtained by dissolving 3 mass % tridecafluorohexyltrimethoxysilane (SIT8176-0 manufactured by GELEST Inc.) serving as the water-repellent agent and 1 mass % 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (KBM303 manufactured by Shin-Etsu Chemical Co., Ltd.) serving as the water-repellent agent having an adhesion strengthening effect in isoamylether. Layer separation of isoamylether serving as the solvent depending on the content of the ultrapure water did not occur. In addition, a treatment solution B without ultrapure water being added was prepared as control.
In order to evaluate water-repellency of the substrate surface that was subjected to water-repellent treatment, the contact angle at the substrate surface was measured with a contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.). The contact angle when treatment solution B was employed was 41.4°, and the contact angle when treatment solution A to which ultrapure water was added was 54.1°.
The entire wafer surface was subjected to water-repellent treatment in line with the procedure as in Example 7, except for employing a treatment solution C to which 0.001 ml of 2.38% solution of tetramethylammonium hydroxide (TMAH) serving as alkali and 0.04 ml of isopropyl alcohol (IPA) for improving solubility of TMAH had been added instead of ultrapure water added to treatment solution A, and subsequently the semiconductor device was manufactured. Here, treatment solution B was used as control.
The contact angle when treatment solution B was employed was 41.4°, and the contact angle when treatment solution C to which IPA was added was 58.1°.
Three types of treatment solutions, i.e., a treatment solution D obtained by adding 0.002 ml of 2.38% TMAH solution to 3 g of solution obtained by dissolving 3 mass % tridecafluorohexyltrimethoxysilane (SIT8176-0 manufactured by GELEST Inc.) serving as the water-repellent agent and 1 mass % 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (KBM303 manufactured by Shin-Etsu Chemical Co., Ltd.) serving as the water-repellent agent having an adhesion strengthening effect in isopropyl alcohol (IPA), a treatment solution E obtained by adding 0.01 ml of 2.38% TMAH solution to the same, and a treatment solution F obtained by adding 0.13 ml of 2.38% TMAH solution to the same, were prepared. The entire wafer surface was subjected to water-repellent treatment in line with the procedure as in Example 7 except that treatment solution A was changed to each of these treatment solutions D to F, and subsequently the semiconductor device was manufactured. The results of measurement of pH of each treatment solution with a pH meter are as follows: pH of treatment solution D was 7 to 8; pH of treatment solution E was 7 to 8; and pH of treatment solution F was 9 to 10.
The contact angles when treatment solutions D to F above were employed were 105.1° (treatment solution D), 103.7° (treatment solution E), and 104.5° (treatment solution F), respectively, and there was no great difference between the solutions. In addition, a state of the wafer surface after water-repellent treatment was observed. As to treatment solution D, unevenness in treatment was not observed. As to treatment solution E, slight unevenness in treatment was observed. As to treatment solution F, unevenness in treatment was observed. Determination of unevenness in treatment was made based on visual observation, and determination as uneven treatment was made when uneven color was observed on the treated wafer.
The present example is conducted in order to confirm whether water-repellency improved in the treatment above is maintained when formation of the processed film or heat treatment is performed in the wafer subsequent to water-repellent treatment or adhesion-strengthening treatment.
A treatment solution G was prepared by dissolving 1.94 mass % Rf (fluorine-structure-containing) trimethoxysilane (Rf (fluorine-structure-containing) trimethoxysilane (70409 manufactured by Asahi Glass Co., Ltd.) serving as the water-repellent agent and 0.97 mass % 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane (KBM303 manufactured by Shin-Etsu Chemical Co., Ltd.) serving as the water-repellent agent having an adhesion-strengthening effect in a solvent mixture obtained by mixing amyl alcohol and isoamylether at a volume ratio of 3:7, and by adding thereto ultrapure water to attain a concentration of 1.9 mass %. The entire wafer surface was subjected to water-repellent treatment in line with the procedure as in Example 7, by dropping 1 ml of treatment solution G onto the wafer from the edge rinse nozzle that was set to drop the treatment solution onto the wafer center portion. Three wafers subjected to water-repellent treatment as such were fabricated and subjected to initial bake treatment for 1 minute at different temperatures respectively. Thereafter, the contact angle indicating water-repellency of each wafer surface was measured. The temperatures for the initial bake treatment were 110° C., 130° C., and 150° C., respectively. Thereafter, all wafers were subjected to bake treatment at 205° C. for 1 minute, and the contact angle was measured again. When the initial bake temperature was set to 110° C., the contact angle was decreased by 9.5. When the initial bake temperature was set to 130° C., an amount of decrease was 8.4°. When the initial bake temperature was set to 150° C., an amount of decrease was as small as 2.6°. It was found that the contact angle at the wafer surface after decrease was greater when a higher initial bake temperature was set, as compared with treatment at a lower temperature.
According to the embodiment of the present invention, as the substrate is made highly water-repellent, an effect to suppress spill of the liquid for liquid immersion can be enhanced by strong capillary.
Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the scope of the present invention being limited only by the terms of the appended claims.
Number | Date | Country | Kind |
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2007-094042 (P) | Mar 2007 | JP | national |
2008-021604 (P) | Jan 2008 | JP | national |