Claims
- 1. A method of generating electron-beam data used for creating a mask for a layout pattern of a semiconductor integrated circuit, said method comprising:parallel processing a layout pattern of a semiconductor integrated circuit with a parallel data processing unit based on at least one of (i) design layers of the semiconductor integrated circuit, (ii) fabrication processes used in fabricating a mask for the layout pattern, and (iii) segments, each segment being an electron-beam radiation region of the mask, by dividing data processing and assigning divided portions of the data processing to respective parallel-connected processing circuits wherein the parallel data processing unit includes a hierarchy developing unit for developing, in parallel processing, of a hierarchy of the layout pattern for respective design layers by assigning the developing of a hierarchy to respective parallel-connected processing circuits; and converting format of data processed by parallel processing into electron-beam data and outputting the electron-beam data.
- 2. The method of generating electron-beam data according to claim 1 wherein parallel processing includes dividing figures of the layout pattern in a trapezoid division unit, for the respective fabrication processes, trapezoidally, by assigning the dividing to respective parallel-connected processing circuits, and outputting a plurality of trapezoid files.
- 3. The method of generating electron-beam data according to claim 2 wherein parallel processing includes sorting the trapezoid files output by the trapezoid division unit using a key for respective combinations of the fabrication processes and the segments by assigning the sorting to respective processing circuits.
- 4. The method of generating electron-beam data according to claim 3 wherein parallel processing includes data-compressing the layout pattern for respective combinations of the fabrication processes and the segments by assigning the data-compressing to respective processing circuits.
- 5. The method of generating electron-beam data according to claim 3 wherein converting format includes format-converting data of the layout pattern for respective fabrication processes by assigning the format-converting to respective processing circuits.
- 6. The method of generating electron-beam data according to claim 2 wherein parallel processing includes data-compressing the layout pattern for respective combinations of the fabrication processes and the segments by assigning the data-compressing to respective processing circuits.
- 7. The method of generating electron-beam data according to claim 2 wherein converting format includes format-converting data of the layout pattern for respective fabrication processes by assigning the format-converting to respective processing circuits.
- 8. The method of generating electron-beam data according to claim 1 wherein parallel processing includes data-compressing the layout pattern for respective combinations of the fabrication processes and the segments by assigning the data-compressing to respective processing circuits.
- 9. The method of generating electron-beam data according to claim 8 wherein converting format includes format-converting data of the layout pattern for respective fabrication processes by assigning the format-converting to respective processing circuits.
- 10. The method of generating electron-beam data according to claim 1 wherein converting format includes format-converting data of the layout pattern for respective fabrication processes by assigning the format-converting to respective processing circuits.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-138980 |
May 1997 |
JP |
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Parent Case Info
This disclosure is a divisional of patent application Ser. No. 08/975,164, filed on Nov. 20, 1997 now U.S. Pat. No. 6,056,785.
US Referenced Citations (8)
Foreign Referenced Citations (3)
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60-75965 |
Apr 1985 |
JP |
2139911 |
May 1990 |
JP |
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May 1996 |
JP |