Claims
- 1. A local oxidation (LOCOS) method comprising:forming a mask layer over a semiconductor substrate and patterning the mask layer to form an opening, which exposes the substrate; and simultaneously forming a field oxide (FOX) layer on the exposed portion of the substrate and removing the mask layer by a reagent mixed of an oxidizer and an etchant in a high temperature environment in a range of about 950° C. to about 1150° C.
- 2. The method of claim 1, wherein the mask layer comprises silicon nitride.
- 3. The method of claim 2, wherein before the step of forming the mask layer, a pad oxide layer is formed over the substrate such that the pad oxide is also patterned to form the opening.
- 4. The method of claim 1, wherein the oxidizer and the etchant of the reagent have no reaction to each other.
- 5. The method of claim 4, wherein the oxidizer of the reagent comprises O2, O3, or H2O2.
- 6. The method of claim 4, wherein the etchant of the reagent comprises H3PO4, HF, SF6, CHF3, or CF4.
- 7. The method of claim 1, wherein the high temperature environment comprises a temperature of about 1100° C.
- 8. The method of claim 1, wherein the opening is formed by photolithography and etching.
- 9. A local oxidation (LOCOS) method comprising:sequentially forming a pad oxide layer and a mask layer over a semiconductor substrate; patterning the pad oxide layer and the mask layer to form an opening, which exposes the substrate; simultaneously forming a field oxide (FOX) layer on the exposed portion of the substrate and removing the mask layer by a reagent mixed of an oxidizer and an etchant in a high temperature environment in a range of about 950° C. to about 1150° C.; and removing the pad oxide.
- 10. The method of claim 9, wherein the high temperature environment comprises a temperature of about 1100° C.
- 11. The method of claim 9, wherein the oxidizer of the reagent comprises O2.
- 12. The method of claim 9, wherein the oxidizer of the reagent comprises O3.
- 13. The method of claim 9, wherein the oxidizer of the reagent comprises H2O2.
- 14. The method of claim 9, wherein the etchant of the reagent comprises H3PO4.
- 15. The method of claim 9, wherein the etchant of the reagent comprises HF.
- 16. The method of claim 9, wherein the etchant of the reagent comprises SF6.
- 17. The method of claim 9, wherein the etchant of the reagent comprises CHF3.
- 18. The method of claim 9, wherein the etchant of the reagant comprises CF4.
- 19. A local oxidation (LOCOS) method comprising:forming a mask layer over a semiconductor substrate and patterning the mask layer to form an opening, which exposes the substrate; and simultaneously forming a field oxide (FOX) layer on the exposed portion of the substrate and removing the mask layer by flushing a reagent on the substrate at a temperature of higher than about 1000° C. but lower than about 1150° C., wherein the reagent comprises an oxidizer and an etchant and the etchant is SF6 or HF.
- 20. The method of claim 19, wherein before the step of forming the mask layer, a pad oxide layer is formed over the substrate such that the pad oxide is also patterned to form the opening.
Priority Claims (1)
Number |
Date |
Country |
Kind |
87111028 |
Jul 1998 |
TW |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application Ser. no. 87,111,028, filed Jul. 8, 1998, the full disclosure of which is incorporated herein by reference.
US Referenced Citations (3)