This is a continuation of application Ser. No. 08/160,686, now abandoned filed Nov. 30, 1993, which is a continuation-in-part of Ser. No. 08/124,836, filed Sep. 21, 1993, titled METHOD FOR FABRICATING INTERLEVEL CONTACTS, which is a continuation of Ser. No. 07/443,898, now abandoned, filed Nov. 30, 1989, and of Ser. No. 08/146,825, filed Nov. 1, 1993, titled METHOD FOR FORMING A METAL CONTACT, which is a continuation of Ser. No. 07/835,731, now abandoned filed Feb. 2, 1992, which is a continuation of Ser. No. 07/609,883, U.S. Pat. No. 5,108,951, filed Nov. 5, 1990, and of Ser. No. 07/948,690, now abandoned filed Sep. 22, 1992, titled METHOD FOR FORMING A METAL CONTACT.
Number | Name | Date | Kind |
---|---|---|---|
3158504 | Anderson | Nov 1964 | |
3900598 | Hall et al. | Aug 1975 | |
4107726 | Schilling | Aug 1978 | |
4436582 | Saxena | Mar 1984 | |
4502209 | Eizenberg et al. | Mar 1985 | |
4566177 | van de Ven | Jan 1986 | |
4592802 | Deleonibus et al. | Jun 1986 | |
4661228 | Mintz | Apr 1987 | |
4756810 | Lamont et al. | Jul 1988 | |
4758533 | Magee et al. | Jul 1988 | |
4772571 | Scovell et al. | Sep 1988 | |
4833519 | Kawano et al. | May 1989 | |
4837183 | Polito et al. | Jun 1989 | |
4892844 | Cheung | Jan 1990 | |
4944961 | Lu | Jul 1990 | |
4970176 | Tracy et al. | Nov 1990 | |
4975389 | Ryan et al. | Dec 1990 | |
4976839 | Inoue | Dec 1990 | |
4988423 | Yamamoto | Jan 1991 | |
4994162 | Armstrong | Feb 1991 | |
5106781 | De Vries | Apr 1992 | |
5108570 | Wang | Apr 1992 | |
5108951 | Chen et al. | Apr 1992 | |
5231055 | Smith | Jul 1993 | |
5312772 | Yokoyama et al. | May 1994 |
Number | Date | Country |
---|---|---|
0107259A3 | May 1984 | EPX |
0132720A1 | Feb 1985 | EPX |
0137701A1 | Apr 1985 | EPX |
0168828A2 | Jan 1986 | EPX |
0257277A2 | Mar 1988 | EPX |
0269019A3 | Jun 1988 | EPX |
0273715A2 | Jul 1988 | EPX |
276087AA2 | Jul 1988 | EPX |
0310108A2 | Apr 1989 | EPX |
0329227A1 | Aug 1989 | EPX |
0351001A1 | Jan 1990 | EPX |
0430403A2 | Jun 1991 | EPX |
0451571A2 | Oct 1991 | EPX |
0488264A3 | Jun 1992 | EPX |
0488628A2 | Jun 1992 | EPX |
0499241A1 | Aug 1992 | EPX |
54-71564 | Aug 1979 | JPX |
57-139939A | Aug 1982 | JPX |
58-46641A | Mar 1983 | JPX |
60-227446 | Nov 1985 | JPX |
61-142739A | Jun 1986 | JPX |
63-124447A | May 1988 | JPX |
63-136547A | Jun 1988 | JPX |
1-077122 | Mar 1989 | JPX |
1-160036A | Jun 1989 | JPX |
2-137230A | May 1990 | JPX |
2122566A | Jul 1983 | GBX |
22128636A | May 1984 | GBX |
Entry |
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TiN Metallization Barriers: from 1.2.mu. to 0.35.mu. Technology Fabio Pintchovski and Ed Travis, Motorola, Inc., Austin, Tex. pp. 777-786, 1992 Materials Research Society. |
Development of a Planarized Al-S1 Contact Filling Technology Hisako Ono, et al., VMIC Conference, Jun. 1990, pp. 76-82. |
Aluminum Metallization for ULSI, Dipankar Pramanik et al., Solid State Technology Mar. 1990, No. 3, Westford, Mass. pp. 73-79. |
Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W E. G. Golgan, et al., vol. 4, No. 4, 1989 Materials Research Society, pp. 815-820. |
Planarized Aluminum Deposition on TiW and TiN Layers by High Temperature Evaporation, G. E. Georgiou, et al., AT&T Bell Laboratories, Jun. 1989 VMIC Conference, pp. 315-321. |
The properties of aluminum thin films sputter deposited at elevated temperatures, M. Inoue et al., J. Vac. Sci. Technol. May 6, 1988, pp. 1636-1939. |
Evaluation of Titanium as a Diffusion Barrier Between Aluminum and Silicon for 1.2 .mu.m CMOS Integrated Circuits, M. Farahani, et al., Electrochemical Society Active Member, pp. 2835-2845, Nov. 1987. |
Nonconformal Al Via Filling and Planarization by Partially Ionized Beam Deposition for Multilevel Interconnection, S. N. Mei, et al., Oct. 1987 IEEE Electron Devices Letters, pp. 503-505. |
Aluminum Alloy Planarization for Topography Control of Multilevel VLSI Interconnect, van Gogh, et al., Jun. 1987, V-MIC Conf., IEEE, pp. 371-375. |
Interconnect Materials for VLSI Circuits, Y. Pauleau, Centre National d'Etudes des Telecommunications, Meylan, France Apr. 1987, Solid State Technology, pp. 155-162. |
"Planarization of Al Alloy Film During High Rate Sputtering", V. Hoffman, et al., Intl. Conf. on Metallurgical Coatings, San Diego, Mar. 1986, Report No. 122, pp. 1-20. |
"Sputtering and Interconnect Trends, Peter Burggraaf, Semiconductor International", Nov. 1984, pp. 70-73. |
"TiN formed by evaporation as a diffusion barrier between Al and Si", C. Y. Ting, IBM T. J. Watson Research Center, Yorktown Heights, N.Y. 10598, May 6, 1982, J. Vac. Sci. Tech. pp. 14-18. |
"High-temperature contact structures for silicon semiconductor devices", M. Wittmer, Brown Boveri Research Center, 5405 Baden-Dattwil, Switzerland, Appl. Phys. Lett., Sep. 1980 pp. 540-542. |
"Silicon Processing for the VLSI Era", S. Wolf, et al., Lattice Press, Inc., 1986, pp. 332-374. |
Number | Date | Country | |
---|---|---|---|
948590 | Sep 1992 | ||
146825 | Nov 1993 |
Number | Date | Country | |
---|---|---|---|
Parent | 160686 | Nov 1993 | |
Parent | 835731 | Feb 1992 | |
Parent | 609883 | Nov 1990 | |
Parent | 443898 | Nov 1989 |
Number | Date | Country | |
---|---|---|---|
Parent | 124836 | Sep 1993 |