METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Abstract

A semiconductor device of the present invention includes a semiconductor chip with bumps formed on its surface, and an adhesion sheet provided on the bumps-formed surface of semiconductor chip. Adhesion sheet has a film base material layer and a film adhesion layer for adhering film base material layer to semiconductor chip, and it has such a structure that a part of the sheet melts by heating and tears by pressuring during flip chip bonding. Therefore, it is possible to obtain a semiconductor device which enables good flip chip bonding without any gaps between a device and a substrate by a simple manufacturing process, and to obtain a method of manufacturing the semiconductor device.

Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a semiconductor device with high reliability and productivity, wherein a device can be easily mounted on a substrate in flip-chip-mounting, and to a method of manufacturing the same.

[0003] 2. Description of the Background Art

[0004] Flip-chip-mounting of a device is usually performed in the following manner.

[0005] FIG. 10 is a schematic sectional view showing how a device is mounted to a substrate by ordinary flip chip technique. Referring to FIG. 10, an individual semiconductor device 101 is prepared with bumps 104 formed on its surface. Bumps 104 of this semiconductor device 101 are aligned with electrodes 106a of a printed substrate 106. Thereafter, semiconductor device 101 is mounted on printed substrate 106, and bumps 104 and electrodes 106a are electrically connected by reflow-melting solder. The solder may be bump 104 itself, or may be the solder precoated on printed substrate 106.

[0006] Then, a liquid material referred to as an underfill material 109 is injected between semiconductor device 101 and printed substrate 106 by an injection equipment 130. This underfill material 109 is injected for the purpose of, for example, decreasing microstress on bumps 104, protecting semiconductor device 101 from external humidity or shocks, and ensuring sufficient reliability.

[0007] However, since underfill material 109 is filled between semiconductor device 101 and printed substrate 106 employing capillarity, it has the following problems: filling requires long time; air would be caught up, generating voids 131 inside, depending on the bump pattern; filling of a large chip is impossible; sufficient physical properties such as heat resistance are not ensured; and the total mounting processes are complicated.

[0008] One of techniques to solve these problems involved in the underfill material is disclosed, for example, in Japanese Patent Laying-Open No. 11-307586.

[0009] FIG. 11 is a schematic sectional view showing a structure of a semiconductor device of the flip chip mounting type disclosed in Japanese Patent Laying-Open No. 11-307586. Referring to FIG. 11, this laid-open application discloses a structure in which a thermosetting resin layer 205 and a protection film 206 are provided on the surface of a semiconductor device 201 where bumps 204 are formed. Here, the thermosetting resin layer 205 has such a nature that it is liquid at a temperature for connecting bumps 204 upon flip chip mounting of this semiconductor device 201, and is pushed away from connecting section of the bumps 204 by pressuring upon mounting and enables the bumps 204 and electrodes of the printed substrate to be joined together.

[0010] The thermosetting resin layer 205 is formed by a step of applying the same on bumps-forming-surface of the semiconductor device 201 and drying thereafter, or by a step of coating, by melting film- or sheet-shaped thermosetting resin with pressure flow.

[0011] However, in the semiconductor device of the flip chip mounting type disclosed in the above-mentioned laid-open application, steps of previously applying (coating) liquid thermosetting resin and solidifying the resin by drying or other means after the application are needed. In addition, in case of film- or sheet-shaped thermosetting resin, coating had to be performed in melted state by means of pressure flow, for example.

[0012] In addition, after a dicing process, since an individual semiconductor device has that surface on which bumps are provided (a surface on which a semiconductor integrated circuit is formed) facing upward (and a dicing sheet is adhered on a lower surface), the individual semiconductor device had to be picked up carefully to avoid contact with the bumps on its upper surface.

SUMMARY OF THE INVENTION

[0013] An object of the present invention is to provide a semiconductor device which enables good flip chip bonding without any gaps between a device and a substrate by a simple manufacturing process, and a method of manufacturing the semiconductor device.

[0014] Semiconductor device of the present invention includes a flip chip device with bumps formed on its surface and a sheet provided on the bumps-formed surface of the flip chip device. The sheet has a base material layer and a flip-chip-side adhesion layer for adherence of the base material layer to the flip chip device, and its structure is such that, a part of the sheet melts by heating and tears by pressuring during flip chip bonding.

[0015] According to the semiconductor device of the present invention, since the sheet melts by heating and tears by pressuring during flip chip bonding, bumps are exposed from the torn sheet. Then the exposed bumps can be electrically connected to electrodes on a surface of a substrate.

[0016] Such sheet is adhered on the bumps-formed surface of the flip chip device by an adhesion layer. Therefore, in contrast to the conventional example, steps of applying liquid thermosetting resin and solidifying thereafter by drying, e.g., are unnecessary. It is also unnecessary to coat with film- or sheet-shaped membrane in melted state by pressure flow, for example. Thus, the manufacturing steps can be simplified compared to that of conventional example.

[0017] In addition, the sheet torn at flip chip bonding is embedded between the flip chip device and the substrate after flip chip bonding, so it can eliminate the gaps therebetween.

[0018] Furthermore, since the bumps are covered with the sheet by adhering of the sheet prior to dicing process, the semiconductor device can be picked up without contacting with the bumps after dicing. This prevents sticking of foreign matters on surfaces of bumps and establishes good connectivity between bumps and electrodes of the mounted substrate.

[0019] Furthermore, high positional accuracy or high load is unnecessary upon adhering the sheet to the flip chip device, because the employed sheet has such a structure that a part of the sheet melts by heating and tears by pressuring during flip chip bonding.

[0020] In the semiconductor device described above, it is preferable that a substrate having electrodes on its surface is further provided. The bumps are exposed from the sheet surface when the sheet is torn, and the exposed bumps are electrically connected to electrodes on a surface of the substrate by flip chip bonding.

[0021] Thus, good connection between the bumps and the electrodes is established, and flip chip bonding can be carried out by simpler steps as compared to conventional example.

[0022] In the semiconductor device described above, it is preferable that the flip chip device bonded to the substrate by flip chip technique is sealed with an insulator.

[0023] Thus, the present invention can be applied, for example, to CSP (Chip Scale Package) or BGA (Ball Grid Array).

[0024] In the semiconductor device described above, it is preferable that the sheet is embedded between the flip chip device and the substrate without gaps.

[0025] This can enhance adhesion of the flip chip device and the substrate.

[0026] In the semiconductor device described above, it is preferable that the sheet has a substrate-side adhesion layer provided on a surface opposite to that surface on which a flip-chip-side adhesion layer of a base material layer is provided.

[0027] This can increase junctional strength of the flip chip device to the substrate.

[0028] Manufacturing method of the semiconductor device according to the present invention includes the following steps.

[0029] First, the sheet having a base material layer and an adhesion layer is adhered on the bumps-formed surface of the flip chip device with the adhesion layer to cover the bumps. Then the flip chip device with the sheet adhered is flip-chip-bonded to the substrate having electrodes by pressuring and heating. A part of the sheet melts by heating and the sheet tears by pressuring during this flip chip bonding, and bumps are exposed from the torn sheet. Then the bumps and the electrodes are electrically connected to each other.

[0030] According to the manufacturing method of the semiconductor device of the present invention, the sheet is adhered on the bumps-formed surface of the flip chip device by an adhesion layer. Therefore, in contrast to the conventional example, steps of applying liquid thermosetting resin and solidifying thereafter by drying, e.g., are unnecessary. It is also unnecessary to coat with film- or sheet-shaped membrane in melted state by pressure flow, for example. Thus, the manufacturing steps can be simplified compared to that of conventional example.

[0031] In addition, the sheet torn at flip chip bonding is embedded between the flip chip device and the substrate after flip chip bonding, so it can eliminate the gaps therebetween.

[0032] Furthermore, since the bumps are covered with the sheet by adhering of the sheet prior to dicing process, the semiconductor device can be picked up without contacting with the bumps after dicing. This prevents sticking of foreign matters on surfaces of bumps and establishes good connectivity between bumps and electrodes of the mounted substrate.

[0033] Furthermore, high positional accuracy or high load is unnecessary upon adhering the sheet to the flip chip device, because the sheet has such a structure that a part of the sheet melts by heating and tears by pressuring during flip chip bonding.

[0034] In the manufacturing method of the semiconductor device described above, it is preferable that the sheet is adhered to the flip chip device in a vacuum chamber under atmosphere of increased degree of vacuum.

[0035] This allows the sheet to adhere without gaps to the surface of the flip chip device when the sheet tears. It is therefore possible to embed without any gaps between the flip chip device and the substrate after flip chip bonding.

[0036] In the manufacturing method of the semiconductor device described above, it is preferable that the step of forming the flip chip device by dicing a semiconductor wafer is further included, wherein the sheet is adhered to the semiconductor wafer prior to the dicing of the semiconductor wafer.

[0037] This can simplify the manufacturing steps, because adhering the sheet to every semiconductor chip after dicing is unnecessary.

[0038] In the manufacturing method of the semiconductor device described above, it is preferable that the sheet is prepared integrated into the dicing sheet.

[0039] This eliminates either the step of adhering the sheet to the semiconductor wafer or the step of adhering the semiconductor wafer to the dicing sheet, and can further simplify the manufacturing steps.

[0040] The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0041] FIG. 1 is a schematic cross sectional view showing a structure of a semiconductor device in a first embodiment of the present invention.

[0042] FIGS. 2 and 3 are schematic cross sectional views showing steps of method of manufacturing a semiconductor device (flip chip bonding method) in the first embodiment of the present invention.

[0043] FIG. 4 is a schematic cross sectional view showing a structure of a semiconductor wafer with a dicing sheet adhered on its back surface.

[0044] FIG. 5 is a schematic cross sectional view showing a structure of an integrated dicing sheet and adhesion sheet.

[0045] FIG. 6 is a schematic cross sectional view showing a structure of a semiconductor device in a third embodiment of the present invention.

[0046] FIGS. 7 and 8 are schematic cross sectional views showing steps of method of manufacturing a semiconductor device (flip chip bonding method) in the third embodiment of the present invention.

[0047] FIG. 9 is a schematic cross sectional view showing a structure of CSP or BGA as a structure of a semiconductor device of the present invention.

[0048] FIG. 10 is a schematic cross sectional view showing a prior example of filling an underfill material into gaps between a semiconductor chip and a substrate.

[0049] FIG. 11 is a schematic cross sectional view showing a structure of a semiconductor device disclosed in Japanese Patent Laying-Open No. 11-307586.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0050] Preferred embodiments of the present invention will be described below with reference to the drawings.

[0051] (First Embodiment)

[0052] Referring to FIG. 1, electrodes 2 are formed on the surface of semiconductor chip 1, and a surface protection film 3 is formed on that surface of semiconductor chip 1 where electrodes 2 are formed. Surface protection film 3 is made of a material including polyimide, for example. Bumps 4 consisting of solder, for example, are formed on electrodes 2 exposed from surface protection film 3.

[0053] On this bumps-formed surface of semiconductor chip 1, an adhesion sheet 5 is adhered so as to cover the surface of each bump 4. This adhesion sheet 5 has a stacked structure of a film base material layer 5b and a film adhesion layer 5a for adhering film base material layer 5b to semiconductor chip 1. This adhesion sheet 5 has such a structure that a part of the sheet melts by heating and tears by pressuring during flip chip bonding. Film base material layer 5b is made of resin such as epoxy-based resin (rubber deformative epoxy resin), and more particularly, it is made of HS222 manufactured by Hitachi Chemical Co., Ltd. In addition, thickness of adhesion sheet 5 is set to be, e.g., about 40 μm.

[0054] It is to be noted that, while there are gaps A between adhesion sheet 5 and the surface of semiconductor chip 1, these gaps A are in nearly vacuum state as will be described below.

[0055] Flip chip bonding using semiconductor device of this embodiment will be described.

[0056] Referring to FIG. 1, on the bumps-formed surface of semiconductor wafer 1 before dicing, adhesion sheet 5 is adhered so as to cover the surface of each bump 4. It is preferable that this adhering of adhesion sheet 5 takes place in a vacuum chamber under atmosphere of increased degree of vacuum. Since adhesion sheet 5 is adhered in a vacuum chamber, gaps A between semiconductor wafer 1 and adhesion sheet 5 are in nearly vacuum state.

[0057] Then, semiconductor wafer 1 is diced and separated to an individual semiconductor chip 1. Adhesion sheet 5 is also diced concurrently.

[0058] Referring to FIG. 2, the semiconductor chip 1 with adhesion sheet 5 adhered thereon is flip-chip-bonded to an organic substrate 6, on which surface electrodes 6a are formed. This flip chip bonding is carried out by pressuring semiconductor chip 1 against organic substrate 6 with a load of 0.147-0.196 N/bump×5 sec., for example, while a jig which supports organic substrate 6 is heated to, e.g., 250° C.

[0059] During the flip chip bonding, parts of adhesion sheet 5 which are covering surfaces of bumps 4 come into contact with electrodes 6a firstly. Since organic substrate 6 is heated by the jig, the parts of adhesion sheet 5 in contact with electrodes 6a of organic substrate 6 melts with the heat, and the thickness of that parts of adhesion sheet 5 becomes thinner. Then adhesion sheet 5 tears with said load provided for bonding, and surfaces of bumps 4 are partially exposed from the torn part.

[0060] As described according to FIG. 1, gaps A between adhesion sheet 5 and semiconductor chip 1 are in nearly vacuum state so that, during said tearing, adhesion sheet 5 and bumps-formed surface of semiconductor chip 1 are joined together so as to eliminate gaps. Therefore, gaps between adhesion sheet 5 and a surface of semiconductor chip 1 are eliminated.

[0061] Referring to FIG. 3, bumps 4 are melted or deformed by further pressuring, and electrodes 6a of organic substrate 6 and bumps 4 can be electrically connected to each other, while flip chip bonding without gaps between semiconductor chip 1 and organic substrate 6 is enabled.

[0062] In this embodiment, since adhesion sheet 5 has such a structure that a part of the sheet melts by heating and tears by pressuring during flip chip bonding, bumps 4 are exposed from the torn adhesion sheet 5 upon flip chip bonding. Then the exposed bumps 4 can be electrically connected to electrodes 6a on a surface of organic substrate 6.

[0063] Such adhesion sheet 5 is adhered on the bumps-formed surface of the flip chip device by film adhesion layer 5a. Therefore, in contrast to the conventional example, steps of applying liquid thermosetting resin and solidifying the thermosetting resin thereafter by e. g. drying, are unnecessary. It is also unnecessary to coat with film- or sheet-shaped membrane in melted state by pressure flow, for example. Thus, the manufacturing steps can be simplified compared to that of conventional example.

[0064] In addition, adhesion sheet 5 torn at flip chip bonding is embedded between semiconductor chip 1 and organic substrate 6 after flip chip bonding, so it can eliminate the gaps therebetween.

[0065] Furthermore, since bumps 4 are covered with adhesion sheet 5 by adhering of adhesion sheet 5 prior to dicing process, the semiconductor device can be picked up without contacting bumps 4 after dicing. This prevents sticking of foreign matters on surfaces of bumps 4 and establishes good connectivity between bumps 4 and electrodes 6a.

[0066] Furthermore, high positional accuracy or high load is unnecessary upon adhering adhesion sheet 5 to the flip chip device, because the employed adhesion sheet 5 has such a structure that a part of the sheet melts by heating and tears by pressuring during flip chip bonding.

[0067] In addition, gaps A shown in FIG. 1 can be set to a vacuum state by adhering adhesion sheet 5 to semiconductor chip 1 in a vacuum chamber. This allows adhesion sheet 5 to adhere without gaps on the surface of semiconductor chip 1 after adhesion sheet 5 tears. It is therefore possible to embed without any gaps between semiconductor chip 1 and organic substrate 6 by adhesion sheet 5 after flip chip bonding.

[0068] (Second Embodiment)

[0069] As a rule, a dicing sheet is usually adhered on a surface opposite to bumps-formed surface of a semiconductor wafer before dicing. Herein, a dicing sheet is adhered to a semiconductor wafer before dicing and is drawn after dicing to widen a space between each semiconductor chip to make each semiconductor chip easier to take out.

[0070] Thus, in case of adhering a dicing sheet to a semiconductor wafer of the present invention by a conventional method, as shown in FIG. 4, a dicing sheet 8 is adhered on a surface opposite to bumps-formed surface of semiconductor wafer 1, and adhesion sheet 5 is adhered on the bumps-formed surface.

[0071] As shown in FIG. 5, however, adhesion sheet 5 integrated into dicing sheet 8 can also be adhered on bumps-formed surface of semiconductor chip 1. In this case, either the step of adhering adhesion sheet 5 to semiconductor wafer 1 or the step of adhering semiconductor wafer 1 to dicing sheet 8 can be eliminated, which can further simplify the manufacturing steps.

[0072] (Third Embodiment)

[0073] Although adhesion sheet 5 whose structure consists of two layers of film adhesion layer 5a and film base material layer 5b is described in the first embodiment, adhesion sheet 5 may also have a three-layered structure as shown in FIG. 6, in which film base material layer 5b is sandwiched between film adhesion layers 5a and 5c. Other structures shown in FIG. 6 is similar to that shown in FIG. 1 with the same reference characters indicating the same members, so the description will not be repeated here.

[0074] In the structure shown in FIG. 6 where adhesion sheet 5 of a three-layered structure is provided, a part of adhesion sheet 5 melts by heating and tears by pressuring during flip chip bonding, and parts of surfaces of bumps 4 are exposed from adhesion sheet 5, as shown in FIG. 7. Then bumps 4 can be electrically connected to electrodes 6a of organic substrate 6 by further pressuring, as shown in FIG. 8. In addition, as film adhesion layers 5c of adhesion sheet 5 is adhered on the surface of organic substrate 6, junctional strength of semiconductor chip 1 and organic substrate 6 can increase.

[0075] (Fourth Embodiment)

[0076] The structure obtained from flip chip bonding of the present invention can also be applied to CSP or BGA. FIG. 9 is a schematic cross sectional view showing a structure obtained when a semiconductor device obtained from flip chip bonding of the present invention is applied to CSP or BGA. Referring to FIG. 9, a plurality (for example, two) of semiconductor chips 1, whose structures are shown in FIGS. 1-3, are adhered on electrodes 6a of substrate 6, which semiconductor chips 1 are sealed with an insulator 11 such as resin to form CSP or BGA. Bumps 6b of CSP or BGA are electrically connected to electrodes 13 of organic substrate 12.

[0077] Although the example of bumps-formed semiconductor chip 1 used as flip chip device is described according to the first to fourth embodiments, it is not for limiting and any other device can also be used as long as it can be flip-chip-bonded.

[0078] In addition, while the example of solder used as a material of bumps 4 is described herein, the material is not limited to this and it can also include other materials such as gold (Au).

[0079] In addition, adhesion sheet 5 is not limited to its stacked structure of two or three layers, but it can consist of stacked structure of more than four layers, or it can be made of materials other than described in the embodiments above, as long as a part of the sheet melts by heating and tears by pressuring during flip chip bonding.

[0080] Further, while the example of a plurality of semiconductor chips 1 arranged on the single substrate are described in the fourth embodiment, only one semiconductor chip 1 may be adhered on substrate 6.

[0081] Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.

Claims

1. A semiconductor device, comprising: a flip chip device with a bump formed on its surface; and a sheet provided on said bump-formed surface of said flip chip device; wherein said sheet has a base material layer and a flip-chip-side adhesion layer for adherence of said base material layer to said flip chip device, and has such a structure that a part of the sheet melts by heating and tears by pressuring during flip chip bonding.

2. The semiconductor device according to claim 1, further comprising a substrate having an electrode on its surface: wherein said bump is exposed from said sheet surface when said sheet is torn; and said exposed bump is electrically connected to said electrode on the surface of said substrate by said flip chip bonding.

3. The semiconductor device according to claim 1, wherein said flip chip device bonded to said substrate by said flip chip bonding is sealed with an insulator.

4. The semiconductor device according to claim 1, wherein said sheet is embedded between said flip chip device and said substrate without any gap.

5. The semiconductor device according to claim 1, wherein said sheet has a substrate-side adhesion layer provided on a surface opposite to that surface on which said flip-chip-side adhesion layer of said base material layer is provided.

6. A method of manufacturing a semiconductor device, comprising the steps of: adhering a sheet having a base material layer and an adhesion layer on a bump-formed surface of a flip chip device with said adhesion layer to cover said bump; and flip-chip-bonding said flip chip device with said sheet adhered thereon to a substrate having an electrode by pressuring and heating; wherein a part of said sheet melts by heating and said sheet tears by pressuring during said flip chip bonding, said bump is exposed from said torn sheet, and said bump and said electrode are electrically connected to each other.

7. The method of manufacturing a semiconductor device according to claim 6, wherein said sheet is adhered to said flip chip device in a vacuum chamber under atmosphere of increased degree of vacuum.

8. The method of manufacturing a semiconductor device according to claim 6, further comprising the step of forming said flip chip device by dicing a semiconductor wafer: wherein said sheet is adhered to said semiconductor wafer prior to said dicing of said semiconductor wafer.

9. The method of manufacturing a semiconductor device according to claim 8, wherein said sheet is prepared integrated into a dicing sheet.