Claims
- 1. A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive layer on a semiconductor substrate;
- forming a first insulating film on said conductive film, said first insulating film having a reflectance which is 25% or more for an exposing light and which periodically changes in accordance with a change in the thickness of said first insulating film;
- forming a second insulating film on said first insulating film, said second insulating film having a reflectance which is 25% or more for the exposing light and which periodically changes in accordance with a change in the thickness of said second insulating film, said second insulating film further having a refractive index different from a refractive index of said first insulating film, wherein a total reflectance of said first and second insulating films is less than 25%;
- forming a photosensitive film on said second insulating film;
- partially exposing said photosensitive film with the exposing light and using said first and second insulating films as an antireflective film, and developing said photosensitive film, thereby forming a mask; and
- selectively etching said second and first insulating films and said conductive layer using said mask to form a pattern in said conductive layer.
- 2. A method according to claim 1, wherein said first insulating film is a silicon nitride film, and said second insulating film is a silicon oxide film.
- 3. A method according to claim 1, wherein said first insulating film is a silicon oxide film, and said second insulating film is a silicon nitride film.
- 4. A method according to claim 1, wherein each of said first and second insulating films has a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness, and a thickness of one insulating film having a larger reflectance change period is increased.
- 5. A method according to claim 1, wherein the step of forming a first insulating film and the step of forming a second insulating film comprise forming, of said first and second insulating films, one insulating film having a higher reflectance and a larger thickness on the other insulating film.
- 6. A method of manufacturing a semiconductor device including a process of forming a pattern by photoetching, comprising the steps of:
- forming a conducting layer having an uneven upper surface on a semiconductor substrate;
- forming a first insulating film on said conducting layer, said first insulating film having a reflectance which is 25% or more for an exposing light for photoetching and which periodically changes with changes in the thickness of said first insulating film;
- forming a second insulating film on said first insulating film, said second insulating film having a reflectance which is 25% or more for the exposing light and which periodically changes with a change in thickness of said second insulating film and having a refractive index different than that of said first insulating film, whereby said first and second insulating films have a total reflectance of less than 25% when an angle .theta., representing a degree of unevenness between the upper surface of said conductive layer and a horizontal plane, ranges between 0.degree. and 40.degree.;
- forming a photosensitive film on said second insulating film;
- partially exposing the photosensitive film with the exposing light and using said first and second insulating films as an antireflective layer, and developing the photosensitive film, thereby forming a mask; and
- selectively etching the second and first insulating films, and conductive layer, using the mask, to form a pattern in the conductive layer.
- 7. A method according to claim 6, wherein said first insulating film is a silicon nitride film (Si.sub.3 N.sub.4) having a thickness of 200 (.+-.10%) to 300(.+-.10%) .ANG. and said second insulating film is a silicon dioxide film (SiO.sub.2).
- 8. A method according to claim 6, wherein said first insulating film is a silicon nitride film (Si.sub.3 N.sub.4) having a thickness of 200 (.+-.10%) to 300 (.+-.10%) .ANG., and said second insulating film is a silicon dioxide film (SiO.sub.2) having a thickness of 400 (.+-.10%) to 900 (.+-.10%) .ANG..
- 9. A method according to claim 6, wherein said first insulating film is a silicon dioxide film (SiO.sub.2) having a thickness of 1,000 (.+-.10%) to 1,100 (.+-.10%) .ANG., and said second insulating film is a silicon nitride film (Si.sub.3 N.sub.4).
- 10. A method according to claim 6, wherein said first insulating film is a silicon dioxide film (SiO.sub.2) having a thickness of 1,000 (.+-.10%) to 1,100 (.+-.10%) .ANG., and said second insulating film is a silicon nitride film (Si.sub.3 N.sub.4) having a thickness of 200 (.+-.10%) to 400 (.+-.10%) .ANG..
- 11. A method according to claim 6, wherein the reflectance of one of said first and second insulating films has a larger change period and a larger thickness.
- 12. A method according to claim 6, wherein the step of forming a first insulating film and step of forming a second insulating film are carried out such that one of said first and second insulating films has a higher reflectance and a larger thickness than the other insulating film.
- 13. A method of manufacturing a semiconductor device, comprising the steps of:
- forming a layer on a substrate;
- forming on said layer an antireflecting film having a reflectance less than 25% for light from a light source, said antireflecting film comprising first and second insulating films each having a reflectance of at least 25% for the light;
- forming a patterned photosensitive film on said antireflecting film; and
- etching said antireflecting and said layer using the patterned photosensitive film as a mask.
- 14. A method according to claim 13, wherein said layer is a layer having an uneven upper surface.
- 15. A method according to claim 14, wherein the reflectance of said antireflecting film is less than 25% for angles .theta. between 0.degree. and 40.degree., where .theta. represents a degree of unevenness between the upper surface of said layer and a horizontal plane.
- 16. A method according to claim 13, wherein said first insulating film is a silicon nitride (Si.sub.3 N.sub.4) film formed on said layer and said second insulating film is a silicon dioxide (SiO.sub.2) formed on said silicon nitride film.
- 17. A method according to claim 16, wherein the thickness of said silicon nitride film is between about 200 and 300 .ANG. and the thickness of said silicon dioxide film is between about 400 and 900 .ANG..
- 18. A method according to claim 13, wherein said light source is an i-beam light source emitting light having a wavelength of 365 nanometers.
- 19. A method according to claim 13, wherein said layer is a conductive layer.
- 20. A method according to claim 13, wherein said first insulating film is a silicon dioxide (SiO.sub.2) film formed on said layer and said second insulating film is a silicon nitride (Si.sub.3 N.sub.4) layer.
- 21. A method according to claim 20, wherein the thickness of said silicon dioxide film is between about 1000 and 1100 .ANG. and the thickness of said silicon nitride film is between about 200 and 400 .ANG..
- 22. A method according to claim 13, wherein said first and second insulating films are insulating films selected from a group consisting of silicon nitride; silicon dioxide; BPSG, PSG, alumina, and nitrosilicate glasses; and tantalum oxide.
Priority Claims (1)
Number |
Date |
Country |
Kind |
5-112194 |
Apr 1993 |
JPX |
|
Parent Case Info
This application is a division of application Ser. No. 08/227,519, filed Apr. 4, 1994, now U.S. Pat. No. 5,486,719.
US Referenced Citations (10)
Foreign Referenced Citations (3)
Number |
Date |
Country |
60-240127 |
Nov 1985 |
JPX |
61-170067 |
Jul 1986 |
JPX |
4-206817 |
Jul 1992 |
JPX |
Non-Patent Literature Citations (2)
Entry |
R. Mehratra, et al. Proc. SPIE (Mar. 1991) vol. 1463, p. 487-491 (abstract only) "Reduction of the standing wave effect in positive photoresist using an ARC". |
Z. Chem, et al. IEEE Trans. Elec. Dev. (Jun. 1993) 40(6) pp. 1161-1165 "A novel and effective PECVD SiO.sub.2 /Sin ARC for Si solar cells". |
Divisions (1)
|
Number |
Date |
Country |
Parent |
227519 |
Apr 1994 |
|