Claims
- 1. A narrow pitch connector comprising a substrate on which first terminal electrodes, second terminal electrodes and wiring electrically connecting said first terminal electrodes with said second terminal electrodes are formed, said wiring having a function of making conversion from the pitch of said first terminal electrodes to the pitch of said second terminal electrodes,characterized in that an insulating layer is formed on the outer periphery surface of said substrate and a metal film is formed on said insulating layer.
- 2. The narrow pitch connector according to claim 1, characterized in that said metal film is brought into conduction with said substrate.
- 3. The narrow pitch connector according to claim 1, characterized in that the thermal expansion coefficient of said substrate is approximately equivalent to the thermal expansion coefficient of a connection object to be connected thereto, or less than the thermal expansion coefficient of said connection object.
- 4. The narrow pitch connector according to claim 1, charactenzed in that said substrate is formed of single crystal silicon.
- 5. The narrow pitch connector according to claim 4, characterized in that the crystal face of said single crystal silicon is (100)-plane.
- 6. The narrow pitch connector according to claim 4, characterized in that the crystal face of said single crystal silicon is (110)-plane.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-094074 |
Mar 1999 |
JP |
|
Parent Case Info
This is a Division of application Ser. No. 09/701,300 filed Dec. 13, 2000, now U.S. Pat. No. 6,573,157 which in turn is a 371 of PCT/JP00/02072, filed Mar. 31, 2000. The entire disclosure of the prior application(s) is hereby incorporated by reference herein in its entirety.
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Non-Patent Literature Citations (1)
Entry |
Silicon Processing for the VLSI Era, vol. 1, Wolf et al. Lattice Press, pp. 2-3. |