Claims
- 1. A semiconductor device, including a covering member having a metallic layer, the metallic layer comprising an underlying portion having a maximum surface roughness (Rmax) of 0.5 to 5 μm and a marking portion with a smooth surface in which an unevenness of a size of 0.1 to 0.3 μm is averaged and erased, the smooth surface reflecting specularly an incident light in one direction.
- 2. The semiconductor device as set forth in claim 1:wherein the metallic layer is a nickel plating layer disposed on a surface of the covering member.
- 3. The semiconductor device as set forth in claim 2:wherein a thickness of the nickel plating layer is in the range of 2 to 10 μm.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-328360 |
Nov 1997 |
JP |
|
Parent Case Info
This is a division of parent application Ser. No. 09/199,425, filed Nov. 25, 1998, now U.S. Pat. No. 6,143,587. The contents of this parent application being relied upon and incorporated by reference herein.
US Referenced Citations (7)