Claims
- 1. A method of forming a patterned platinum layer over a chromium layer which comprises the steps of:
- (a) forming a layer of platinum over said chromium layer,
- (b) forming a layer of tantalum over said platinum,
- (c) patterning said tantalum by a plasma-vapor etch to form a mask over said platinum,
- (d) patterning said platinum through said tantalum mask,
- (e) removing the remaining tantalum by a CF.sub.4 plasmavapor etch, whereby the initial chromium layer is left intact due to the selectivity of the CF.sub.4 plasma-vapor etch for tantalum, and
- (f) selectively plating gold onto the platinum.
- 2. A method as set forth in claim 1 wherein said layers are formed on a semiconductor slice.
- 3. A method as set forth in claim 2 wherein said tantalum layer is patterned using a CF.sub.4 etch.
- 4. A method as set forth in claim 2 wherein said platinum layer is patterned using aqua regia.
- 5. A method as set forth in claim 3 wherein said platinum layer is patterned using aqua regia.
- 6. A method as set forth in claim 1 wherein said tantalum layer is patterned using a CF.sub.4 etch.
- 7. A method as set forth in claim 6 wherein said platinum layer is patterned using aqua regia.
- 8. A method as set forth in claim 1 wherein said platinum layer is patterned using aqua regia.
Parent Case Info
This is a continuation, of application Ser. No. 502,472, filed Sept. 3, 1974, now abandoned.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
502472 |
Sep 1974 |
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