Claims
- 1. A method of processing internal surfaces of a chemical vapor deposition reactor comprising:depositing material over internal surfaces of a chemical vapor deposition reactor while processing semiconductor substrates therein; first etching some of the deposited material from the reactor internal surfaces; after the first etching, treating remaining deposited material with atomic oxygen derived from O3 within the reactor in the absence of plasma within the reactor; and after the treating, second etching at least some of the remaining deposited material from the reactor internal surfaces.
- 2. The method of claim 1 wherein the deposited material comprise an oxide, and the first etching comprises a fluorine containing chemistry.
- 3. The method of claim 1 wherein the atomic oxygen is derived from a source gas consisting of O3.
- 4. The method of claim 1 wherein the depositing comprises depositing of an oxygen containing dielectric material using an organic precursor.
- 5. The method of claim 1 wherein the depositing comprises depositing of a high K dielectric material using an organic precursor.
- 6. The method of claim 1 wherein the treating, the first etching and the second etching occur while no semiconductor substrate is within the reactor.
- 7. The method of claim 1 wherein the reactor is not a plasma enhanced chemical vapor deposition reactor.
RELATED PATENT DATA
This patent resulted from a continuation application of U.S. patent application Ser. No. 09/083,258, filed May 21, 1998, entitled “Method Of Processing Internal Surfaces Of A Chemical Vapor Deposition Reactor”, naming F. Daniel Gealy, Husam N. Al-Shareef, and Scott Jeffrey DeBoer as inventors, and which is now U.S. Pat. No. 6,082,375, the disclosure of which is incorporated by reference.
US Referenced Citations (9)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0697467 |
Aug 1996 |
EP |
62040728 |
Feb 1987 |
JP |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/083258 |
May 1998 |
US |
Child |
09/516422 |
|
US |