Claims
- 1. A method of reducing thermal distortion of a photomask and substrate during patterning comprising placing infrared absorbing material adjacent to the substrate, said absorbing material having a location so as to absorb substantial amounts of infrared radiation emitted from said substrate, and wherein said absorbing material has sufficient electrical conductivity to dissipate electric charge accumulating thereon, and wherein said absorbing material has sufficient thermal conductivity to dissipate heat radiatively deposited therein from said substrate without significant temperature rise.
- 2. A method as in claim 1 wherein said absorbing material is silicon carbide.
- 3. A method as in claim 1 wherein said absorbing material is doped silicon carbide.
- 4. A method as in claim 1 wherein said absorbing material is located adjacent to the uncoated face of said substrate.
- 5. A method as in claim 4 wherein said absorbing material is coated on a pallet adjacent to said substrate.
- 6. A method as in claim 4 wherein said absorbing material is adhesively attached to a pallet adjacent to said substrate.
- 7. A method as in claim 4 wherein a pallet adjacent to said substrate comprises said absorbing material.
- 8. A method as in claim 4 wherein a pallet adjacent to said substrate is larger than said substrate.
- 9-16. (Cancelled)
RELATED APPLICATIONS
[0001] This application claims priority from Provisional Application Serial No. 60/154,965 filed Sep. 20, 1999.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60154965 |
Sep 1999 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09451683 |
Nov 1999 |
US |
Child |
10337090 |
Jan 2003 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
10337090 |
Jan 2003 |
US |
Child |
10844223 |
May 2004 |
US |