Claims
- 1. A method of exposing an x-ray sensitive layer of x-ray resist material to reduce the incidence of Blob Defects comprising the steps of:illuminating a surface of the layer of x-ray resist material with non-patterned x-rays with a total exposure insufficient to result in complete removal of the layer of x-ray resist material during a subsequent development process; and illuminating the surface of the layer of x-ray resist material with a patterned intensity of x-rays with a total exposure sufficient to result in the complete removal of the layer of x-ray resist material in regions specified in the pattern during the subsequent development process.
- 2. The method of claim 8 further comprising the step of developing the layer of x-ray resist.
- 3. A method of exposing a layer of ion beam sensitive resist material to reduce the incidence of Blob Defects comprising the steps of:illuminating a surface of the layer of the resist material with a non-patterned ion beam with a total exposure insufficient to result in complete removal of the layer of the resist material during a subsequent development process; and illuminating the surface of the layer of the resist material with a patterned ion beam with a total exposure sufficient to result in the complete removal of the layer of the resist material in regions specified in the pattern during the subsequent development process.
- 4. The method of claim 3 further comprising the step of developing the ion beam sensitive resist.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is related to U.S. Serial No. 09/598,374, which is entitled “METHOD OF REDUCING POST-DEVELOPMENT DEFECTS IN AND AROUND OPENINGS FORMED IN PHOTORESIST BY USE OF MULTIPLE DEVELOPMENT/RINSE CYCLES”. Both applications have one common inventor, a common assignee, and are being filed concurrently.
US Referenced Citations (4)