In compliance with 37 C.F.R. § 1.71(g) (1), the inventions described and claimed herein were made pursuant to a Joint Research Agreement as set forth in 35 U.S.C. § 102(c), and as defined in 35 §100(h) that was in effect on or before the date such inventions were made, and as a result of activities undertaken within the scope of the Joint Research Agreement, by or on the behalf of Micron Technology, Inc. and Intel Corporation.
The present embodiments relate generally to memory and metal sources in memory.
Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic devices. There are many different types of memory including random-access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), and non-volatile (e.g., flash) memory.
Flash memory devices typically use a one-transistor memory cell that may allow for high memory densities, high reliability, and low power consumption. Changes in threshold voltage of the memory cells, through programming of a charge storage structure such as floating gates, trapping layers or other physical phenomena, may determine the data state of each cell.
The memory cells may be arranged in strings of memory cells where each string may be coupled to a source. Groups of strings of memory cells (e.g., memory blocks) may all be coupled to a common source.
When a memory manufacturer desires to increase a memory density of a memory device, additional groups of strings of memory cells may be added to the memory device and coupled to the common source. Thus, the common source may be increased in length, thereby increasing its resistance.
It may be desirable to keep the resistance of the source as low as possible since, as is known in the art, a larger resistance may cause a larger voltage drop from a particular point of the circuit to the common source. A larger voltage drop can cause problems during memory operations that rely on very small voltage differences.
In the following detailed description, reference is made to the accompanying drawings that form a part hereof and in which is shown, by way of illustration, specific embodiments. In the drawings, like numerals describe substantially similar components throughout the several views. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present disclosure. The following detailed description is, therefore, not to be taken in a limiting sense.
Alternate embodiments can include more or less than 16 memory cells 112. The string 100 can include a source select gate transistor 120 that may include an n-channel transistor coupled between one of the memory cells 112 at one end of the string 100 and a common source 126. The common source 126 may comprise, for example, a slot of commonly doped semiconductor material and/or other conductive material. At the other end of the string 100, a drain select gate transistor 130 may include an n-channel transistor coupled between one of the memory cells 112 and a data line (e.g., bit line) 134.
Each of the memory cells 112 may comprise, for example, a floating gate transistor or, alternatively, a charge trap transistor and may include a single level charge storage device or a multilevel charge storage device. The memory cells 112, the source select gate transistor 120, and the drain select gate transistor 130 are controlled by signals on their respective control gates, the signals being provided on access lines (e.g., word lines) WL0-WL15. In one embodiment, the control gates of memory cells in a row of memory cells can form part of an access line.
The source select gate transistor 120 receives a control signal that controls the source select gate transistor 120 to substantially control conduction between the string 100 and the common source 126. The drain select gate transistor 130 receives a control signal that controls the drain select gate transistor 130, so that the drain select gate transistor 130 can be used to select or deselect the string 100.
The string 100 can be one of multiple strings of memory cells 112 in a block of memory cells in a memory device, such as a NAND-architecture flash memory device. Each string 100 of memory cells 112 may be formed vertically such that they extend outward from a substrate as opposed to a planar manner along the substrate.
The source material 200 may include tungsten silicide (WSiX) or some other type of high temperature refractory metal silicides. For example, the metal silicide may include one of: tungsten silicide (WSiX), tantalum silicide (TaSiX), or molybdenum silicide (MoSiX). A metal silicide may work better as a doped source metal since metal silicide may take doping better than a pure metal material. The silicide can be deposited by physical vapor deposition (PVD), wet deposition (WD), or an evaporation process. “x” ratio range can be 1.0 to 4.0.
A capping material 202 may be formed over the source material 200. The capping material 202 may include an oxide material (e.g., an oxide of silicon), a polysilicon material, or some other capping material for sealing pores in the source material 200. If the capping material 202 is an oxide (e.g., an oxide of silicon), the oxide may be used as a source select gate oxide for a source select gate transistor, such as the source select gate transistor 120 as illustrated in
The source material 200 in
Levels of control gate material 401, 403 may be formed over the etch stop material 400 with alternating levels of insulator material 402, 404. For example, the levels of control gate material 401, 403 may include a polysilicon material and the levels of insulator material 402, 404 may include an oxide material. The levels of control gate material 401, 403 may be used as the control gates of the vertically formed memory cells. The levels of insulator material 402, 404 may be used between the memory cells to isolate adjacent memory cells from each other.
An etch mask 405 may be formed over the top of the vertical stack 420. In an embodiment, the etch mask 405 may include a nitride hard mask.
A polysilicon material 601 may be formed (e.g., deposited) over the ONO material 600 along the sidewalls of the opening 500. The polysilicon material 601 may also fill the recesses 501-504. In an embodiment, the polysilicon material 601 may be used as the charge storage structures (e.g., floating gates) for each memory cell in the string of memory cells.
As shown in
An oxide 804 may be formed (e.g., grown) along the sidewalls and bottom 820 of a bottom portion of the opening 700. In an embodiment, this oxide 804 may act as a dielectric for the polysilicon material 300 of the source select gate.
A polysilicon liner 810 may be formed along the sidewalls and bottom 820 of the opening 700. The polysilicon liner 810 may be formed over the previously formed oxide 800-804 (e.g., formed after oxide 800-804 are formed).
An apparatus may be defined as circuitry, an integrated circuit die, a device, or a system.
One or more embodiments can provide a doped metal silicide source. The doped metal silicide source may provide lower sheet resistance than a polysilicon source and also provide adequate gate induced drain leakage performance. A vertical string of memory cells may be formed over the doped metal silicide source and a semiconductor material formed vertically adjacent to the vertical string of memory cells. The semiconductor material may be in contact with the doped metal silicide source to enable diffusion from the source to the semiconductor material that acts as a channel for the string of memory cells.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. Many adaptations will be apparent to those of ordinary skill in the art. Accordingly, this application is intended to cover any adaptations or variations.
This application is a divisional of U.S. application Ser. No. 14/069,553, filed Nov. 1, 2013, which is incorporated herein by reference in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
5053840 | Yoshikawa | Oct 1991 | A |
5838039 | Sato et al. | Nov 1998 | A |
6159797 | Lee | Dec 2000 | A |
6445029 | Lam et al. | Sep 2002 | B1 |
6541835 | Pettersson | Apr 2003 | B1 |
6583009 | Hui et al. | Jun 2003 | B1 |
7369436 | Forbes | May 2008 | B2 |
7682902 | Hsiao et al. | Mar 2010 | B2 |
7910446 | Ma et al. | Mar 2011 | B2 |
8124478 | Park et al. | Feb 2012 | B2 |
8187936 | Alsmeier et al. | May 2012 | B2 |
8258034 | Ramaswamy et al. | Sep 2012 | B2 |
8581321 | Son et al. | Nov 2013 | B2 |
8680605 | Jeon et al. | Mar 2014 | B2 |
8946807 | Hopkins et al. | Feb 2015 | B2 |
9171863 | Wang | Oct 2015 | B2 |
9184175 | Dennison et al. | Nov 2015 | B2 |
9230986 | Hopkins et al. | Jan 2016 | B2 |
9231086 | Khoueir et al. | Jan 2016 | B2 |
9276011 | Simsek-Ege et al. | Mar 2016 | B2 |
9431410 | Sun et al. | Aug 2016 | B2 |
9437604 | Lu et al. | Sep 2016 | B2 |
9608000 | Hopkins et al. | Mar 2017 | B2 |
9627213 | Hee et al. | Apr 2017 | B2 |
9773841 | Simsek-Ege et al. | Sep 2017 | B2 |
9793282 | Dennison et al. | Oct 2017 | B2 |
9991273 | Dennison et al. | Jun 2018 | B2 |
10170639 | Hopkins et al. | Jan 2019 | B2 |
10217799 | Simsek-Ege et al. | Feb 2019 | B2 |
10529776 | Simsek-Ege et al. | Jan 2020 | B2 |
20030155582 | Mahajani et al. | Aug 2003 | A1 |
20050006697 | Hsieh | Jan 2005 | A1 |
20050026382 | Akatsu et al. | Feb 2005 | A1 |
20050133851 | Forbes | Jun 2005 | A1 |
20050224346 | Holm-kennedy | Oct 2005 | A1 |
20060134846 | Wang | Jun 2006 | A1 |
20060237768 | Forbes et al. | Oct 2006 | A1 |
20060258091 | Deloach | Nov 2006 | A1 |
20070047304 | Lee et al. | Mar 2007 | A1 |
20070158736 | Arai et al. | Jul 2007 | A1 |
20080012061 | Ichige et al. | Jan 2008 | A1 |
20080017911 | Akahori | Jan 2008 | A1 |
20080064225 | Yau et al. | Mar 2008 | A1 |
20080067583 | Kidoh | Mar 2008 | A1 |
20080173928 | Arai et al. | Jul 2008 | A1 |
20080253183 | Mizukami et al. | Oct 2008 | A1 |
20080277720 | Youn et al. | Nov 2008 | A1 |
20080315330 | Walker et al. | Dec 2008 | A1 |
20090026460 | Ou et al. | Jan 2009 | A1 |
20090009601 | Hyun | Apr 2009 | A1 |
20090121271 | Son et al. | May 2009 | A1 |
20090184360 | Jin | Jul 2009 | A1 |
20090230458 | Ishiduki et al. | Sep 2009 | A1 |
20090230459 | Kito et al. | Sep 2009 | A1 |
20090262295 | Hong | Oct 2009 | A1 |
20090283813 | Ishii et al. | Nov 2009 | A1 |
20090283819 | Ishikawa et al. | Nov 2009 | A1 |
20090290412 | Mouli | Nov 2009 | A1 |
20100003795 | Park et al. | Jan 2010 | A1 |
20100020608 | Kamigaichi et al. | Jan 2010 | A1 |
20100039865 | Kidoh | Feb 2010 | A1 |
20100123180 | Takano et al. | May 2010 | A1 |
20100163968 | Kim et al. | Jul 2010 | A1 |
20100181612 | Kito et al. | Jul 2010 | A1 |
20100187592 | Chen et al. | Jul 2010 | A1 |
20100200908 | Lee et al. | Aug 2010 | A1 |
20100207193 | Tanaka et al. | Aug 2010 | A1 |
20100240205 | Son | Sep 2010 | A1 |
20100295120 | Sandhu | Nov 2010 | A1 |
20100323505 | Ishikawa et al. | Dec 2010 | A1 |
20110002178 | Hwang | Jan 2011 | A1 |
20110024818 | Ahn | Feb 2011 | A1 |
20110049608 | Kidoh et al. | Mar 2011 | A1 |
20110065270 | Shim et al. | Mar 2011 | A1 |
20110073866 | Kim et al. | Mar 2011 | A1 |
20110147823 | Kuk et al. | Jun 2011 | A1 |
20110201167 | Satonaka et al. | Aug 2011 | A1 |
20110220987 | Tanaka et al. | Sep 2011 | A1 |
20110233646 | Mizushima et al. | Sep 2011 | A1 |
20110248327 | Son et al. | Oct 2011 | A1 |
20110248334 | Sandhu et al. | Oct 2011 | A1 |
20110294290 | Nakanishi | Dec 2011 | A1 |
20110303971 | Lee | Dec 2011 | A1 |
20120001247 | Alsmeier | Jan 2012 | A1 |
20120001249 | Alsmeier et al. | Jan 2012 | A1 |
20120001252 | Alsmeier et al. | Jan 2012 | A1 |
20120058629 | You et al. | Mar 2012 | A1 |
20120068242 | Shin et al. | Mar 2012 | A1 |
20120077320 | Shim et al. | Mar 2012 | A1 |
20120112264 | Lee et al. | May 2012 | A1 |
20120132981 | Imamura et al. | May 2012 | A1 |
20120217564 | Tang et al. | Aug 2012 | A1 |
20120231593 | Joo et al. | Sep 2012 | A1 |
20120256247 | Alsmeier | Oct 2012 | A1 |
20120273870 | Liu | Nov 2012 | A1 |
20120326221 | Sinha | Dec 2012 | A1 |
20130034594 | Monzyk et al. | Feb 2013 | A1 |
20130049095 | Whang et al. | Feb 2013 | A1 |
20130077380 | Sakamoto | Mar 2013 | A1 |
20130089974 | Lee et al. | Apr 2013 | A1 |
20130119452 | Endoh et al. | May 2013 | A1 |
20130171788 | Yang et al. | Jul 2013 | A1 |
20130248974 | Alsmeier et al. | Sep 2013 | A1 |
20130270625 | Jang et al. | Oct 2013 | A1 |
20130307053 | Polishchuk et al. | Nov 2013 | A1 |
20130322174 | Li et al. | Dec 2013 | A1 |
20140131784 | Davis | May 2014 | A1 |
20140167131 | Lu | Jun 2014 | A1 |
20140203344 | Hopkins et al. | Jul 2014 | A1 |
20140231954 | Lue | Aug 2014 | A1 |
20140264353 | Lai | Sep 2014 | A1 |
20140264532 | Dennison et al. | Sep 2014 | A1 |
20140264533 | Simsek-ege et al. | Sep 2014 | A1 |
20140264547 | Kawai | Sep 2014 | A1 |
20140334230 | Kwon | Nov 2014 | A1 |
20150123188 | Lu et al. | May 2015 | A1 |
20150123189 | Sun et al. | May 2015 | A1 |
20150140797 | Hopkins et al. | May 2015 | A1 |
20160049417 | Dennison et al. | Feb 2016 | A1 |
20160093626 | Izumi et al. | Mar 2016 | A1 |
20160133752 | Hopkins et al. | May 2016 | A1 |
20160181323 | Simsek-ege et al. | Jun 2016 | A1 |
20160351580 | Hopkins et al. | Dec 2016 | A1 |
20170200801 | Hopkins et al. | Jul 2017 | A1 |
20170352704 | Simsek-ege et al. | Dec 2017 | A1 |
20170365615 | Dennison et al. | Dec 2017 | A1 |
20180350827 | Dennison et al. | Dec 2018 | A1 |
20190273120 | Simsek-ege et al. | Sep 2019 | A1 |
20200144331 | Simsek-ege et al. | May 2020 | A1 |
Number | Date | Country |
---|---|---|
1401140 | Mar 2003 | CN |
1791974 | Jun 2006 | CN |
101118910 | Feb 2008 | CN |
101211970 | Jul 2008 | CN |
101223640 | Jul 2008 | CN |
101292351 | Oct 2008 | CN |
101364614 | Feb 2009 | CN |
101512729 | Aug 2009 | CN |
101847602 | Sep 2010 | CN |
105027285 | Nov 2015 | CN |
105164808 | Dec 2015 | CN |
105027285 | Jun 2017 | CN |
107256867 | Oct 2017 | CN |
ZL 201480024450.2 | May 2018 | CN |
108461500 | Aug 2018 | CN |
2973710 | Jan 2016 | EP |
2006352104 | Dec 2006 | JP |
2007005814 | Jan 2007 | JP |
2007294595 | Nov 2007 | JP |
2008092708 | Apr 2008 | JP |
2008192708 | Aug 2008 | JP |
2009158529 | Jul 2009 | JP |
2009295617 | Dec 2009 | JP |
2011023586 | Feb 2011 | JP |
2012094694 | May 2012 | JP |
2012119445 | Jun 2012 | JP |
2012146773 | Aug 2012 | JP |
2012227326 | Nov 2012 | JP |
2013153382 | Aug 2013 | JP |
2013201396 | Oct 2013 | JP |
2013219239 | Oct 2013 | JP |
2016514371 | May 2016 | JP |
5965091 | Aug 2016 | JP |
6434424 | Nov 2018 | JP |
1020100104908 | Sep 2010 | KR |
1020110130916 | Dec 2011 | KR |
1020120101818 | Sep 2012 | KR |
1020130024303 | Mar 2013 | KR |
10-1764626 | Jul 2017 | KR |
10-1821943 | Jan 2018 | KR |
201236112 | Sep 2012 | TW |
201442211 | Nov 2014 | TW |
201507168 | Feb 2015 | TW |
201526207 | Jul 2015 | TW |
I548065 | Sep 2016 | TW |
1575716 | Mar 2017 | TW |
201737472 | Oct 2017 | TW |
201826547 | Jul 2018 | TW |
WO-2006132158 | Dec 2006 | WO |
WO-2012009140 | Jan 2012 | WO |
WO-2014116864 | Jul 2014 | WO |
WO-2014149740 | Sep 2014 | WO |
WO-2015066447 | May 2015 | WO |
WO-2015066463 | May 2015 | WO |
Entry |
---|
US 9,754,952 B2, 09/2017, Dennison et al. (withdrawn) |
U.S. Appl. No. 14/069,553, Restriction Requirement dated Feb. 10, 2015, 10 pgs. |
U.S. Appl. No. 14/069,553, Response filed Apr. 10, 2015 to Restriction Requirement dated Feb. 10, 2015, 6 pgs. |
U.S. Appl. No. 14/069,553, Non Final Office Action dated Jul. 13, 2015, 16 pgs. |
U.S. Appl. No. 14/069,553, Response filed Aug. 12, 2015 to Non Final Office Action dated Jul. 13, 2015, 8 pgs. |
U.S. Appl. No. 14/069,553, Final Office Action dated Oct. 5, 2015, 17 pgs. |
U.S. Appl. No. 14/069,553, Response filed Feb. 5, 2016 to Final Office Action dated Oct. 5, 2015, 9 pgs. |
U.S. Appl. No. 14/069,553, Advisory Action dated Feb. 22, 2016, 5 pgs. |
U.S. Appl. No. 14/069,553, Notice of Allowance dated May 4, 2016, 9 pgs. |
U.S. Appl. No. 14/069,574, Restriction Requirement dated Feb. 5, 2015, 10 pgs. |
U.S. Appl. No. 14/069,574, Response filed Apr. 6, 2015 to Restriction Requirement dated Feb. 5, 2015. |
U.S. Appl. No. 14/069,574, Non Final Office Action dated Jul. 15, 2015, 15 pgs. |
U.S. Appl. No. 14/069,574, Response filed Oct. 15, 2015 to Non Final Office Action dated Jul. 15, 2015, 7 pgs. |
U.S. Appl. No. 14/069,574, Final Office Action dated Oct. 29, 2015, 16 pgs. |
U.S. Appl. No. 14/069,574, Response filed Jan. 29, 2016 to Final Office Action dated Oct. 29, 2015, 9 pgs. |
U.S. Appl. No. 14/069,574, Advisory Action dated Feb. 10, 2016, 4 pgs. |
U.S. Appl. No. 14/069,574, Notice of Allowance dated Apr. 27, 2016, 9 pgs. |
U.S. Appl. No. 14/069,553 U.S. Pat. No. 9,437,604, filed Nov. 1, 2013, Methods and Apparatuses Having Strings of Memory Cells Including a Metal Source. |
U.S. Appl. No. 14/069,574 U.S. Pat. No. 9,431,410, filed Nov. 1, 2013, Methods and Apparatuses Having Memory Cells Including a Monolithic Semiconductor Channel. |
U.S. Appl. No. 15/221,131, filed Jul. 27, 2016, Methods and Apparatuses Having Memory Cells Including a Monolithic Semiconductor Channel. |
“European Application Serial No. 14857452.8, Extended European Search Report dated Jun. 7, 2017”, 7 pgs. |
“International Application Serial No. PCT/US2014/063377, International Preliminary Report on Patentability dated May 12, 2016”, 8 pgs. |
“International Application Serial No. PCT/US2014/063407, International Preliminary Report on Patentability dated May 12, 2016”, 12 pgs. |
“Japanese Application Serial No. 2016-526281, Office Action dated Mar. 28, 2017”, w/ English Translation, 10 pgs. |
“Japanese Application Serial No. 2016-526281, Response filed Jun. 27, 2017 to Office Action dated Mar. 28, 2017”, W/ English Claims, 16 pgs. |
“Korean Application Serial No. 10-2016-7014682, Office Action dated Jul. 31, 2017”, With English Translation, 16 pgs. |
“International Application Serial No. PCT/US2014/063377, International Search Report dated Jan. 23, 2015”, 3 pgs. |
“International Application Serial No. PCT/US2014/063377, Written Opinion dated Jan. 23, 2015”, 6 pgs. |
“International Application Serial No. PCT/US2014/063407, International Search Report dated Jan. 29, 2015”, 3 pgs. |
“International Application Serial No. PCT/US2014/063407, Written Opinion dated Jan. 29, 2015”, 10 pgs. |
“Chinese Application Serial No. 201480013075.1, Office Action dated Sep. 19, 2016”, w/English Translation, 10 pgs. |
“Chinese Application Serial No. 201480013075.1, Response filed Feb. 3, 2017 to Office Action dated Sep. 19, 2016”, w/English Claims, 30 pgs. |
“Chinese Application Serial No. 201480024450.2, Office Action dated May 3, 2017”, With English Translation, 22 pgs. |
“Chinese Application Serial No. 201480024450.2, Response filed Sep. 18, 2017 to Office Action dated May 3, 2017”, w/English Claims, 18 pgs. |
“Chinese Application Serial No. 201480063209.0, Office Action dated Feb. 2, 2019”, W/English Translation, 13 pgs. |
“Chinese Application Serial No. 201480063209.0, Office Action dated Aug. 23, 2019”, w/English Translation, 16 pgs. |
“Chinese Application Serial No. 201480063209.0, Response filed Jun. 14, 2019 to Office Action dated Feb. 2, 2019”, w/ English Claims, 21 pgs. |
“Chinese Application Serial No. 201480063209.0, Response filed Oct. 4, 2018 to Office Action dated Mar. 2, 2018”, w/ English Claims, 24 pgs. |
“Chinese Application Serial No. 201480063209.0, Response filed Nov. 4, 2019 to Office Action dated Aug. 23, 2019”, w/ English Claims, 18 pgs. |
“European Application Serial No. 14743125.8, Communication Pursuant to Article 94(3) EPC dated May 22, 2017”, 6 pgs. |
“European Application Serial No. 14743125.8, Extended European Search Report dated Jun. 21, 2016”, 8 pgs. |
“European Application Serial No. 14743125.8, Preliminary Amendment filed Mar. 9, 2016”, 13 pgs. |
“European Application Serial No. 14743125.8, Response filed Dec. 1, 2017 to Communication Pursuant to Article 94(3) EPC dated May 22, 2017”, 11 pgs. |
“European Application Serial No. 14770149.4, Extended European Search Report dated Nov. 25, 2016”, 9 pgs. |
“European Application Serial No. 14770149.4, Invitation Pursuant To Rule 62a(1) EPC dated Aug. 30, 2016”, 2 pgs. |
“European Application Serial No. 14770149.4, Preliminary Amendment filed Apr. 28, 2016”, 22 pgs. |
“European Application Serial No. 14857452.8, Communication Pursuant to Article 94(3) EPC dated Nov. 13, 2018”, 5 pgs. |
“European Application Serial No. 14857452.8, Response filed May 23, 2019 to Communication Pursuant to Article 94(3) EPC dated Nov. 13, 2018”, w/ English Claims, 29 pgs. |
“International Application Serial No. PCT/US2014/012798, International Preliminary Report on Patentability dated Aug. 6, 2015”, 13 pgs. |
“International Application Serial No. PCT/US2014/012798, International Search Report dated May 19, 2014”, 3 pgs. |
“International Application Serial No. PCT/US2014/012798, Written Opinion dated May 19, 2014”, 11 pgs. |
“International Application Serial No. PCT/US2014/020658, International Preliminary Report on Patentability dated Sep. 24, 2015”, 6 pgs. |
“International Application Serial No. PCT/US2014/020658, International Search Report dated Jun. 26, 2014”, 3 pgs. |
“International Application Serial No. PCT/US2014/020658, Written Opinion dated Jun. 26, 2014”, 4 pgs. |
“Japanese Application Serial No. 2015-555280, Office Action dated Feb. 27, 2018”, w/English Translation, 31 pgs. |
“Japanese Application Serial No. 2015-555280, Office Action dated Jul. 4, 2017”, w/English Translation, 27 pgs. |
“Japanese Application Serial No. 2015-555280, Response filed May 25, 2018 to Office Action dated Feb. 27, 2018”, W/ English Claims, 22 pgs. |
“Japanese Application Serial No. 2015-555280, Response filed Oct. 12, 2017 to Office Action dated Jul. 4, 2017”, w/English Claims, 17 pgs. |
“Japanese Application Serial No. 2016-500651, Notice of Rejection dated Mar. 1, 2016”, W/English Translation, 4 pgs. |
“Japanese Application Serial No. 2016-500651, Response filed May 20, 2016 to Notice of Rejection dated Mar. 1, 2016”, W/ English Claims, 6 pgs. |
“Korean Application Serial No. 10-2015-7029545, Final Office Action dated Mar. 27, 2017”, w/English Translation, 6 pgs. |
“Korean Application Serial No. 10-2015-7029545, Office Action dated Oct. 18, 2016”, (With English Translation), 13 pgs. |
“Korean Application Serial No. 10-2015-7029545, Response filed Apr. 25, 2017 to Final Office Action dated Mar. 27, 2017”, W/English Claims, 14 pgs. |
“Korean Application Serial No. 10-2015-7029545, Response filed Dec. 18, 2016 to Office Action dated Oct. 18, 2016”, w/English Claims, 19 pgs. |
“Korean Application Serial No. 10-2017-7021238, Office Action dated Aug. 16, 2017”, w/English Translation, 5 pgs. |
“Korean Application Serial No. 10-2017-7021238, Response filed Oct. 16, 2017 to Office Action dated Aug. 16, 2017”, w/English Claims, 12 pgs. |
“Protrusion”, Merriam-Webster Dictionary, 2 pgs. |
“Taiwanese Application Serial No. 103102815, Amendment filed Nov. 10, 2014”, W/ English Claims, 52 pgs. |
“Taiwanese Application Serial No. 103109314, Office Action dated Apr. 6, 2017”, w/ English Translation, 23 pgs. |
“Taiwanese Application Serial No. 103109314, Response filed Oct. 3, 2017 to Office Action dated Apr. 6, 2017”, w/English Translation, 41 pgs. |
“Taiwanese Application Serial No. 104110136, Office Action dated Jan. 26, 2016”, W/English Translation, 3 pgs. |
“Taiwanese Application Serial No. 104110136, Response filed Apr. 28, 2016 to Office Action dated Jan. 26, 2016”, W/ English Claims, 7 pgs. |
“Taiwanese Application Serial No. 107111763, First Office Action dated Jul. 2, 2018”, w/English translation, 6 pgs. |
“Taiwanese Application Serial No. 107111763, Response filed Oct. 3, 2018 to First Office Action dated Jul. 2, 2018”, w/ English claims, 52 pgs. |
Hang-Ting, Lue, et al., “A Novel Planar Floating-Gate (EG) / Charge Trapping (CT) NAND Device Using BE-SONOS Inter-Poly Dielectric (IPD)”, In proceeding of: Electron Devices Meeting (IEDM), (2009), 34.3:1-4. |
Kitamura, Takuya, et al., “A Low Voltage Operating Flash Memory Cell with High Coupling Ratio”, (1998), 2 pgs. |
Kuppurao, Satheesh, et al., “EQuipment Frontiers: Thermal Processing: In situ steam generation: A new rapid thermal oxidation technique”, Solid State Technology, (Jul. 2000), Cover, Index, 233-239. |
Seo, Moon-Sik, et al., “The 3 dimensional Vertical FG NAND Flash Memory Cell Arrays with the Novel Electrical S/D/ Technique using the Extending Sidewall Contral Gate (ESCG)”, 4 pages. |
“Chinese Application Serial No. 201480063209.0, Decision of Rejection dated Oct. 9, 2020”, w/o English translation, 5 pgs. |
“Chinese Application Serial No. 201480063209.0, Office Action dated May 29, 2020”, w/English Translation, 17 pgs. |
“Chinese Application Serial No. 201480063209.0, Response filed Aug. 11, 2020 to Office Action dated May 29, 2020”, w/ English Claims, 20 pgs. |
“Chinese Application Serial No. 201480063209.0, Response filed Jan. 22, 2021 to Decision of Rejection dated Oct. 9, 2020”, w English Claims, 10 pgs. |
“Chinese Application Serial No. 201480063209.0, Notice of Reexamination dated Jun. 29, 2021”, w English translation, 11 pgs. |
“Chinese Application Serial No. 201480063209.0, Notice of Reexamination dated Oct. 18, 2021”, w o English translation, 14 pgs. |
“Chinese Application Serial No. 201480063209.0, Response filed Dec. 2, 2021 to Notice of Reexamination dated Oct. 18, 2021” w/English Claims, 9 pgs. |
“Chinese Application Serial No. 201480063209.0, Office Action dated Mar. 2, 2018”, w/English Translation, 18 pgs. |
“Japanese Application Serial No. 2016-526281, Office Action dated Sep. 26, 2017”, With English Translation, 6 pgs. |
“Japanese Application Serial No. 2016-526281, Response filed Dec. 25, 2017 to Office Action dated Sep. 26, 2017”, w/ Amended Claims, 18 pgs. |
“Korean Application Serial No. 10-2016-7014682, Response filed Dec. 28, 2017 to Office Action dated Jul. 31, 2017”, w/ Amended Claims, 25 pgs. |
Number | Date | Country | |
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20160372479 A1 | Dec 2016 | US |
Number | Date | Country | |
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Parent | 14069553 | Nov 2013 | US |
Child | 15255967 | US |