This invention relates to intensity profile modeling and illumination systems for photolithography.
A general schematic diagram of a photolithography system is shown in
As the feature sizes desired for reproduction on the photosensitive surface shrink, it is increasingly challenging to accurately reproduce a desired pattern on the surface. Numerous optical challenges are presented, including those posed by diffraction and other optical effects or process variations as light is passed from an illumination source, through a system of lenses and the mask to finally illuminate the surface.
Optical proximity correction tools, such as Progen marketed by Synopsys, are available to assist in developing mask patterns that will reflect optical non-idealities and better reproduce a desired feature on a desired surface. For example, “dog-ears” or “hammer head” shapes may be added to the end of linewidth patterns on the mask to ensure the line is reproduced on the surface completely, without shrinking at either end or rounding off relative to the desired form.
For example,
Optical proximity correction tools, used to generate the modified mask pattern 250, for example, generate models of the intensity profile at the photo-sensitive surface after illumination of a mask with an illumination source. Intensity is typically represented by a scalar value. The intensity at a surface illuminated through a mask in a lithography system can be calculated generally by taking the convolution of a function representing the mask with a set of functions representing the lithography system that includes the illumination source. The set of functions representing the lithography system are eigenfunctions of a matrix operator.
Hopkins imaging theory provides the rigorous mathematical foundation for intensity calculations. The theory provides that intensity, in the spatial domain, is given by:
I(x,y)=∫∫∫∫J(x1−x2,y1−y2)O*(x1,y1)O*(x2,y2)H(x−x1,y−y1)H*(x−x2,y−y2)dx1dx2dy1dy2
where x and y are coordinates in the spatial domain. O represents a mask pattern, H is a lens pupil function and J is a source pupil intensity function. A Fourier transform yields intensity in the frequency domain, given by:
I(x,y)=∫∫∫∫∫∫J(f·g)H(f+f1,g+g1)H*(f+f2,g+g2)O*(f1,g1)O*(f2,g2)e−i2π[(f
where f and g are coordinates in the frequency domain. As described further below, the frequency domain is also representative of the pupil plane in an illumination system.
This comprehensive theory provides for calculations of a complete intensity profile. To be useful, however, an optical proximity correction tool should generate an intensity profile within a reasonable amount of time to practically alter the mask design. Accordingly, the optical proximity correction tools make various simplifications and approximations of actual optical effects. In particular, optical proximity correction tools generally do not take into account polarization of an illumination source, or variation of that polarization across the illumination pupil.
The polarization of an electromagnetic wave is generally the angle of oscillation. For example, in
Embodiments of the present invention take into account the polarization of an illumination source and are able to model the effect of polarization on the resultant intensity profile. Computationally, embodiments of the invention decompose a polarization pupil into a plurality of two-dimensional functions, also referred to as kernels. The plurality of two-dimensional functions are derived from Hopkins imaging theory. Methods of the present invention proceed by evaluating the plurality of two-dimensional functions at a plurality of points in a pupil plane of the illumination system to generate a polarization data model for the illumination source. This polarization data model is used to generate a matrix operator according to embodiments of the present invention, and the matrix operator is diagonalized to yield a set of eigenfunctions, which are convoluted with a function representative of the mask to generate the intensity profile. It will be clear to one skilled in the art that embodiments of the invention may be practiced without various details discussed below. In some instances, well-known optical and other lithography system components, controllers, control signals, and software operations have not been shown in detail in order to avoid unnecessarily obscuring the described embodiments of the invention.
An embodiment of a method and an embodiment of a set of instructions encoded on computer-readable media according to the present invention is shown in
A complete polarization pupil describing the illumination source is decomposed into a plurality of two-dimensional functions for the purposes of modeling the illumination source, including the effects of the source's polarization. The plurality of two-dimensional functions are evaluated 410 to generate a polarization model from the received polarization data. The polarization model may allow modeling of a resultant intensity profile in a reasonable amount of computational time.
In some embodiments of the present invention, the plurality of two-dimensional functions includes a first function describing polarization of the illumination source along a first axis, a second function describing polarization of the illumination source along a second axis, and a third and fourth function each describing a coupling component of the illumination source between the first and second axes. In some embodiments, the first and second axes are orthogonal axes. There are two coupling functions in some embodiments because a first coupling function describes a real portion of the coupling, and a second coupling function describes an imaginary portion of the coupling. In some embodiments, a fifth two-dimensional function describes a non-polarization component of the illumination source.
The plurality of two-dimensional functions are evaluated in a pupil plane of the illumination system in some embodiments of the present invention. Referring back to the diagram of an illumination system in
Accordingly, in some embodiments, the five two-dimensional functions used to decompose a complete polarization pupil can be given as:
K—XX=cos2α(f,g)*DoP(f,g);
K—YY=sin2α(f,g)*DoP(f,g);
K_cos—XY=sin α(f,g)*cos α(f,g)*cos φ(f,g)*DoP(f,g);
K_sin—XY=sin α(f,g)*cos α(f,g)*sin φ(f,g)*DoP(f,g); and
K_non—pol=1−DoP(f,g);
where f and g represent pupil variables in frequency domain, such that coordinates in the pupil plane are defined by an f value and a g value, α(f,g) represents a polarization angle as a first function in the pupil plane; φ(f,g) represents a phase angle between a first and a second dimension polarization as a second function in the pupil plane, and DoP(f,g) represents a degree of polarization as a third function in the pupil plane.
The derivation of these functions is now described. The theory provided below is provided to enable those skilled in the art to understand the origin of the five two-dimensional equations used in the embodiment described above and is not intended to limit embodiments of the invention to those five equations or to derivation in this manner.
Recall Hopkins equation for intensity, expressed in vector form:
The summation in Hopkins equation above is expressing the electric field squared, where M is the matrix mapping the electric field from an object to an image. The summation can then be expressed as:
∥E∥2=E0(f,g)MT(f1,g1)M*(f2,g2)E0*(f,g)
Now, polarization degree, angle (α) and phase shift (φ) can be represented in a vector function E0(f,g) given as:
E0=E(f,g)*(cos(α(f,g)), sin(α(f,g))eiφ(f,g))
where E(f,g) is the square root of the degree of polarization.
Assuming a simple case, where the degree of polarization=1 and φ=0, we can write E0=(cos(α(f,g)), sin(α(f,g))); and define functions K_sxx=cos2α (f,g); K_syy=sin2α (f,g) and K_sxy=sin α(f,g)*cos α(f,g)
Expanding the ∥E∥2 equation above for this case, we have:
An identity is used to put the cross term in a bilinear form. The identity is given as:
Using this identity, and the ∥E∥2 expression above, Hopkins equation becomes:
Writing this in the space domain, Hopkins equation takes the form:
bln is a bilinear operation function, cvr is a covariant function and @ represents a convolution operation.
The first summation term, summing bln(H@Mxk) is represented as a pupil function, KpupilX, in optical proximity correction systems. The second summation term, summing bln(H@Mxy) is represented as a second pupil function, KpupilY and the third by a third function Kpcross. These functions are used to generate a matrix operator given as:
Koptics=norm(cvr(Ksource@K—sxx)*KpupilX+cvr(Ksource@K—syy)*KpupilY+2*cvr(Ksource@K—sxy)*Kpcross
where norm is a normalization, cvr is a covariant operation, @ is a convolution operation and * is a multiplication.
Recall that this solution is for a simple case. For an arbitrary polarization angle and phase shift, Hopkins equation in the space domain takes the form:
where K cos_xy=cos α(f,g) sin α(f,g)cos φ(f,g)
K sin_xy=cos α(f,g)sin α(f,g)sin φ(f,g) and K_i=i (a constant function of 90 degree phase shift)
The first three summation terms, as before, represent KpupilX, KpupilY, and Kpcross, however, for this more generic case, there is a fourth summation term, which can be called Kpcross_i.
For a general polarization filter, therefore, in some embodiments five two-dimensional functions are used to generate a polarization model and, ultimately, to generate a matrix operator. These five functions, derived above are:
K—XX=cos2α(f,g)*DoP(f,g);
K—YY=sin2α(f,g)*DoP(f,g);
K_cos—XY=sin α(f,g)*cos α(f,g)*cos θ(f,g)*DoP(f,g);
K_sin—XY=sin α(f,g)*cos α(f,g)*sin θ(f,g)*DoP(f,g); and
K_non—pol=1−DoP(f,g);
Referring back to
Koptics=norm(cvr(J@K—XX)*KpupilX+cvr(J@K—YY)*KpupilY+2*cvr(J@K_cos—XY)*Kpcross+2*cvr(J@K_sin—XY)*Kpcross—i+cvr0.5*(J@K_non—pol)*KpupilX+0.5*cvr(J@K_non—pol)*KpupilY);
where norm includes a normalization operation; cvr includes a covariant operation; J represents a first pupil function, KpupilX and KpupilY represent second and third pupil functions in a first and second dimension, respectively, Kpcross and Kpcross_i represent third and fourth pupil functions capturing a real and an imaginary coupling between dimensions, respectively, and (includes a convolution operation.
This matrix operator can be generated in a reasonable amount of time using available computational systems in embodiments of the invention, and takes polarization of an illumination source into account.
Referring again to
The mask function is convoluted 440 with eigenfunctions of the matrix operator to generate a scalar intensity profile. This scalar intensity profile represents intensity at a surface, such as the surface 120 in
Based on the intensity profile data generated 440, the mask function or the illumination source may be altered 450, 460 relative to those used to conduct the simulation in embodiments of the invention to achieve improved reproduction of a desired pattern on the surface. In some embodiments, the mask function is changed based on the intensity profile and a new mask is generated corresponding to the revised mask function.
A system 500 according to an embodiment of the invention is shown schematically in
Some embodiments of the present invention provide methods and systems for correcting a mask pattern. An embodiment of a mask correcting system 600 is shown in
The masks produced by embodiments of the present invention may be used in lithography systems of generally any type. These lithography systems may be used in various semiconductor or other micromachining fabrication facilities to create various products including integrated circuit chips having features patterned using the mask. The masks and products made using embodiments of the present invention may have improved feature size or more accurate reproduction of features than those made without use of polarization data during the intensity modeling process. This may ultimately decrease failure rate of these final products or make smaller or more complicated feature arrangements possible.
Some embodiments of the present invention also provide systems and methods for selecting an illumination source for an illumination system. An embodiment of a system 700 for generating desired polarization data is shown in
In some embodiments, both the mask and the polarization of the illumination source may be altered based on the modeled intensity profile data.
From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. Embodiments of the present invention can be implemented in software, hardware, or combinations thereof. One or more general or special purpose computers may be programmed to carry out methods in accordance with embodiments of the present invention.
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