Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

Description

FIELD OF INVENTION

The present disclosure relates generally to methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface and particularly methods for selectively forming a target film from vapor phase reactants on a second metallic surface utilizing a selectively formed passivation film.

BACKGROUND OF THE DISCLOSURE

In some semiconductor device fabrication processes, it may be desirable to deposit a target film only on certain areas of a substrate. Typically, such discriminating results are achieved by depositing a continuous film of the target material and subsequently patterning the continuous film using lithography and etch steps. Such lithography and etch processes may be time consuming, expensive, and do not offer the precision required for many applications. A possible solution is the use of selective deposition processes, whereby a target film is deposited only in the desired areas thereby eliminating the need for subsequent patterning steps. Selective deposition processes employed for the fabrication of semiconductor device structures may take a number of forms, including, but not limited to, selective dielectric deposition on dielectric surfaces (DoD), selective dielectric deposition on metallic surfaces (DoM), selective metal deposition on dielectric surfaces (MoD), and selective metal deposition on metallic surfaces (MoM).

Selective deposition on metallic surfaces (i.e., DoM, or MoM) may be of interest for providing simplified methods for selectively depositing a target film over a metallic surface without the need for complex patterning and etch steps. A common method for forming a target film over metallic surfaces may comprise: a blanket deposition of a target film over the entire surface of the substrate, wherein the target film covers both the metallic surfaces and the dielectric surfaces; and forming a photolithography mask layer (or if required a double patterned mask layer) over the surface of the blanket film; where the mask layer is disposed over the regions where the target film is to remain. The substrate is then exposed to an etch process, such as a wet etch or a dry etch, which will remove the target film from the exposed regions of the target film not covered by the photolithographic mask. Subsequent processes may remove the remaining photolithographic mask, thereby forming a substrate comprising a target film disposed only over the metallic surfaces of the substrate. However, such processes for the formation of a target film over metallic surfaces are complex, time consuming, cost prohibitive, and will only become more complex as device feature size decreases at advanced technology nodes.

Accordingly, methods are desired for selectively forming a target film on metallic surfaces.

SUMMARY OF THE DISCLOSURE

This summary is provided to introduce a selection of concepts in a simplified form. These concepts are described in further detail in the detailed description of example embodiments of the disclosure below. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

In some embodiments, methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are provided. The methods may comprise: contacting the substrate with a plasma generated from a hydrogen containing gas; selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film; and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

For the purpose of summarizing the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described herein above. Of course, it is to be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein without necessarily achieving other objects or advantages as may be taught or suggested herein.

All of these embodiments are intended to be within the scope of the invention herein disclosed. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments having reference to the attached figures, the invention not being limited to any particular embodiment(s) disclosed.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

While the specification concludes with claims particularly pointing out and distinctly claiming what are regarded as embodiments of the invention, the advantages of embodiments of the disclosure may be more readily ascertained from the description of certain examples of the embodiments of the disclosure when read in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates an exemplary process flow for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface according to the embodiments of the disclosure;

FIG. 2 illustrates an exemplary sub-process flow for selectively forming a passivation film on a first dielectric surface utilizing a cyclical deposition process according to the embodiments of the disclosure;

FIG. 3 illustrates an exemplary sub-process flow for selectively depositing a target film on a second metallic surface utilizing a cyclical deposition process according to the embodiments of the disclosure; and

FIGS. 4A-4E illustrate exemplary cross-sectional views of semiconductor structures formed by selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface according to the embodiments of the disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Although certain embodiments and examples are disclosed below, it will be understood by those in the art that the invention extends beyond the specifically disclosed embodiments and/or uses of the invention and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the invention disclosed should not be limited by the particular disclosed embodiments described below.

The illustrations presented herein are not meant to be actual views of any particular material, structure, or device, but are merely idealized representations that are used to describe embodiments of the disclosure.

As used herein, the term “substrate” may refer to any underlying material or materials that may be used, or upon which, a device, a circuit or a film may be formed.

As used herein, the term “metallic surface” may refer to surfaces including a metallic component, including, but not limited to, metal surfaces, metal oxide surfaces, metal silicide surfaces, metal nitride surfaces, metal carbide surfaces, and mixtures thereof. The term “metallic surface” may also include a surface of native oxide of a metallic material.

As used herein, the term “dielectric surface” may refer a surface of dielectric material, including, but not limited to, silicon containing dielectric materials, such as, for example, silicon oxides, silicon nitrides, silicon oxynitrides, silicon oxycarbides, and mixtures thereof. In addition, the term “dielectric surface” may also refer to a surface of metal oxide material, or metal nitride material.

As used herein, the term “cyclic vapor deposition” may refer to the sequential introduction of two or more precursors (reactants) into a reaction chamber to deposit a film over a substrate and includes deposition techniques such as atomic layer deposition, molecular layer deposition, and cyclical chemical vapor deposition.

As used herein, the term “cyclical chemical vapor deposition” may refer to any process wherein a substrate is sequentially exposed to two or more volatile precursors, which react and/or decompose on a substrate to produce a desired deposition.

As used herein, the term “atomic layer deposition” (ALD) may refer to a vapor deposition process in which deposition cycles, preferably a plurality of consecutive deposition cycles, are conducted in a process chamber. Typically, during each cycle the precursor is chemisorbed to a deposition surface (e.g., a substrate surface or a previously deposited underlying surface such as material from a previous ALD cycle), forming a monolayer or sub-monolayer that does not readily react with additional precursor (i.e., a self-limiting reaction). Thereafter, if necessary, a reactant (e.g., another precursor or reaction gas) may subsequently be introduced into the process chamber for use in converting the chemisorbed precursor to the desired material on the deposition surface. Typically, this reactant is capable of further reaction with the precursor. Further, purging steps may also be utilized during each cycle to remove excess precursor from the process chamber and/or remove excess reactant and/or reaction byproducts from the process chamber after conversion of the chemisorbed precursor. Further, the term “atomic layer deposition,” as used herein, is also meant to include processes designated by related terms such as, “chemical vapor atomic layer deposition”, “atomic layer epitaxy” (ALE), molecular beam epitaxy (MBE), gas source MBE, or organometallic MBE, and chemical beam epitaxy when performed with alternating pulses of precursor composition(s), reactive gas, and purge (e.g., inert carrier) gas.

As used herein, the term “molecular layer deposition” (MLD) may refer to a vapor deposition process in which deposition cycles, preferably a plurality of consecutive deposition cycles, are conducted in a process chamber. Typically, during each cycle an organic precursor is chemisorbed to a deposition surface (e.g., a substrate surface or a previously deposited underlying surface such as material from a previous MLD cycle), typically forming a single molecular layer that does not readily react with additional organic precursor (i.e., a self-limiting reaction). Thereafter, if necessary, another precursor (e.g., another organic precursor) may subsequently be introduced into the process chamber for use in forming the desired organic material on the deposition surface. Further, purging steps may also be utilized during each cycle to remove excess organic precursor from the process chamber and/or remove reaction byproducts from the process chamber after formation of the desired organic material.

As used herein, the term “cyclopentadienyl based metal precursor” may refer to a metal precursor comprising a metal complex with one of more cyclopentadienyl groups (C₅H₅⁻, abbreviated as Cp⁻).

As used herein, the term “film” may refer to any continuous or non-continuous structures and material formed or deposited by the methods disclosed herein. For example, “film” could include 2D materials, nanorods, nanotubes, nanolaminates, or nanoparticles or even partial or full molecular layers or partial or full atomic layers or clusters of atoms and/or molecules. “Films” may comprise material with pinholes, but still be at least partially physically continuous.

A number of example materials are given throughout the embodiments of the current disclosure, it should be noted that the chemical formulas given for each of the example materials should not be construed as limiting and that the non-limiting example materials given should not be limited by a given example stoichiometry.

The embodiments of the disclosure may include methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface. In particular, the embodiments of the disclosure may comprise, selectively forming a target film over a metallic surface and may include metal-on-metal selective formation processes, and dielectric-on-metal selective formation processes. The selective formation of the target film on, or directly on, a metallic surface may be permitted by initially selectively forming a passivation film on, or directly on, the first dielectric surfaces without forming a passivation film on the second metallic surfaces.

The selective formation of the passivation film on the dielectric surfaces of the substrate may be realized by initially contacting the substrate comprising both dielectric surfaces and metallic surfaces, with a plasma generated from a hydrogen containing gas. After the initial treatment of the surfaces of the substrate with the hydrogen based plasma, a selective deposition process may be utilized to selectively deposit a passivation film over the first dielectric surfaces relative to the second metallic surfaces, i.e., a greater thickness of the passivation film is deposited over the dielectric surfaces relative to the thickness of the passivation film formed over the metallic surfaces. After selective deposition of the passivation film, any portion of the passivation film deposited over the metallic surfaces may be completely removed while maintaining a substantial thickness of the passivation film deposited over the dielectric surfaces.

After selective formation of the passivation film over the dielectric surfaces, a selective deposition process may be utilized to deposit the target film on the metallic surfaces relative to the passivation film, i.e., a greater thickness of the target film is deposited on the metallic surfaces relative to the thickness of the target film deposited on the passivation film. Any unwanted target film disposed over the passivation film may be removed by an etch process. Following the selective deposition of the target film over the metallic surfaces of the substrate the remaining passivation film may be selectively removed while maintaining at least a portion of the target film disposed over the metallic surfaces.

The selective formation processes described herein may be utilized to form a target film selectively on a metallic surface without the need for additional photolithography and/or etch steps. In addition, selective formation of the passivation film may be achieved without passivation/blocking agents on the surface of substrate. The selective formation processes described herein therefore simplify semiconductor device fabrication processes by reducing the number of photolithographic mask stages and/or etch stages required. In addition, the ability to selectively form a target film on a metallic surface may enable improved device performance by eliminating the deposition of certain undesirable films on metallic surfaces.

Non-limiting example applications for the selective processes of the current disclosure may comprise, selectively forming a capping layer over a metal interconnect (e.g., selective tungsten (W) formation over a copper (Cu) line. In an additional example, the selective processes of the current disclosure may be employed in image reversal applications, such as, tone reversal of an etch mask.

Therefore the embodiments of the disclosure may provide methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface. The methods may comprise: contacting the substrate with a plasma generated from a hydrogen containing gas; selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film; and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

The skilled artisan will appreciate that selective deposition can be fully selective or partially selective. A partially selective process can result in fully selective layer by a post-deposition etch that removes all of the deposited material from over surface B without removing the entirety of the deposited material from over surface A. Because a simple etch back process can leave a fully selective structure without the need for expensive masking processes, the selective deposition need not be fully selective in order to obtain the desired benefits.

Selectivity of deposition on surface A relative to surface B can be given as a percentage calculated by [(deposition on surface A)−(deposition on surface B)]/(deposition on the surface A). Deposition can be measured in any of a variety of ways. For example, deposition may be given as the measured thickness of the deposited material, or may be given as the measured amount of material deposited. In embodiments described herein, selective deposition of a passivation film can be conducted on a first dielectric surface (A) relative to a second metallic surface (B). Subsequently, a target film may be selectively deposited on the second metallic surface (A) relative to the passivation film (B).

In some embodiments, selectivity for the selective deposition of the passivation film on the first dielectric surface (relative to the second metallic surface) and/or selectivity of the target film on the second metallic surface (relative to the passivation film) is greater than about 10%, or greater than about 50%, or greater than about 75%, or greater than about 85%, or greater than about 90%, or greater than about 93%, or greater than about 95%, or greater than about 98%, or greater than about 99%, or even greater than about 99.5%.

In some embodiments, deposition only occurs on the first surface and does not occur on the second surface. In some embodiments, deposition on surface A of the substrate relative to surface B of the substrate is at least about 80% selective, which may be selective enough for some particular applications. In some embodiments, the deposition on the surface A of the substrate relative to surface B of the substrate is at least about 50% selective, which may be selective enough for some particular applications. In some embodiments the deposition on surface A of the substrate relative to the surface B of the substrate is at least about 10% selective, which may be selective enough for some particular applications. The skilled artisan will appreciate that a partially selective process can result in a fully selective structure by a post-deposition etch that removes all of the deposited material from over surface B without removing the entirety of the deposited material from over surface A.

In some embodiments, the passivation layer deposited on the first dielectric surface of the substrate may have a thickness less than 50 nanometers, or less than 20 nanometers, or less than 10 nanometers, or less than 5 nanometers, or less than 3 nanometers, or less than 2 nanometers, or less than 1 nanometer, while a ratio of material deposited on the first dielectric surface of the substrate relative to the second metallic surface of the substrate may be greater than or equal to 200:1, or greater than or equal to 100:1, or greater than or equal to 50:1, or greater than or equal to 25:1, or greater than or equal to 20:1, or greater than or equal to 15:1, or greater than or equal to 10:1, or greater than or equal to 5:1, or greater than or equal to 3:1, or greater than or equal to 2:1.

In some embodiments the selectivity of the selective deposition processes described herein may depend on the material compositions of the materials which define the first and/or second surface of the substrate.

The embodiments of the disclosure may be understood in greater detail with reference to FIG. 1 which illustrates exemplary process 100 for selectively forming a target film on a substrate comprising a first dielectric surface a second metallic surface. The exemplary process 100 may proceed by means of a process block 110 comprising providing a substrate comprising a first dielectric surface and a second metallic surface into a reaction chamber.

In more detail, in some embodiments of the disclosure the, substrate may comprise a planar substrate or a patterned substrate. Patterned substrates may comprise substrates that may include semiconductor device structures formed into or onto a surface of the substrate, for example, the patterned substrates may comprise partially fabricated semiconductor device structures such as transistors and/or memory elements. The substrate may comprise a first dielectric surface and a second metallic surface. In some embodiments, the surface of the substrate may comprise a plurality of first dielectric surfaces and a plurality of second metallic surfaces.

In some embodiments of the disclosure, the first dielectric surface may comprise a low dielectric constant material, i.e., a low-k material, which may be defined as an insulator with a dielectric constant less than about 4.0. In some embodiments the dielectric constant of the low-k material may less than 3.5, or less than 3.0, or less than 2.5, or even less than 2.3. In some embodiments, the first dielectric surface may comprise a first silicon containing surface. For example, the first dielectric surface may comprise at least one of a silicon oxide, a silicon nitride, a silicon carbide, a silicon oxynitride, a silicon oxycarbide, or mixtures thereof. In some embodiments of the disclosure, the first dielectric surface may comprise a porous material that contains pores which are connected to each other. In some embodiments, the first dielectric surface may comprise a metal oxide surface, or a metal nitride surface. In some embodiments, the first dielectric surface may comprise a semi-metal oxide surface, or a semi-metal nitride surface.

In some embodiments, the second metallic surface may comprise an elemental metal, such as, for example, copper (Cu), molybdenum (Mo), cobalt (Co), nickel (Ni), or tungsten (W). In some embodiments, the second metallic surface may comprise at least one of an elemental metal, a metallic oxide, a metallic nitride, a metallic silicide, a metallic carbide, or mixtures thereof. In some embodiments, the second metallic surface may comprise a native oxide of a metal containing material, such as, for example, a native oxide of copper (Cu), molybdenum (Mo), cobalt (Co), nickel (Ni), or tungsten (W). In some embodiments, the second metallic surface may comprise a transition metal. In some embodiments, the second metallic surface may comprise an oxide of a transition metal. In some embodiments, the second metallic surface may comprise a transition metal. In some embodiments, the second metallic surface may comprise transition metal, such as, for example, Cu, Co, Ni, Mo or W and may also comprises a passivation layer on top of the metal surface. For example, the transition metal may comprise one or more of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), gold (Au), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), or platinum (Pt).

The exemplary selective formation process 100 may continue with the process block 110 by loading the substrate into a suitable reaction chamber. The reaction chamber may be configured for performing all, or a portion, of the remaining process blocks of selective formation process 100. In some embodiments of the disclosure, a first reaction chamber may be configured to contact the substrate with a plasma generated from a hydrogen containing gas (i.e., process block 120) and further reaction chamber(s) may be employed for the subsequent process blocks utilized in the exemplary process 100. However, in additional embodiments of the disclosure, the first reaction chamber may be configured to perform all of the process blocks comprising the selective formation deposition process 100.

Reactors and associated reaction chamber(s) capable of the selective formation of a target film on a metallic surface can be used to perform the exemplary selective formation process 100. Such reaction chambers may include atomic/molecular layer deposition (ALD/MLD) reaction chambers, plasma enhanced atomic layer deposition (PEALD) reaction chambers, as well as chemical vapor deposition (CVD) reaction chambers equipped with appropriate equipment and means for providing precursors. According to some embodiments a showerhead reaction chamber may be used. According to some embodiments a plasma reaction chamber, such as PEALD reaction chamber, may be used. In such embodiments, the plasma may be direct, remote, or in near vicinity of the substrate. In some embodiments the reactor is a spatial ALD reactor, in which the substrates moves or rotates during processing.

In some embodiments a batch reactor may be used. In some embodiments, a vertical batch reactor is utilized in which the boat rotates during processing. For example, a vertical batch reactor may comprise, a reaction chamber and an elevator constructed and arranged to move a boat configured for supporting a batch of between 10 to 200 substrates in or out of the reaction chamber.

In other embodiments, the batch reactor comprises a mini-batch reactor configured to accommodate 10 or fewer wafers, 8 or fewer wafers, 6 or fewer wafers, 4 or fewer wafers, or 2 wafers. In some embodiments in which a batch reactor is used, wafer-to-wafer non-uniformity is less than 3% (1sigma), less than 2%, less than 1% or even less than 0.5%.

The deposition processes described herein can optionally be carried out in a reactor and associated reaction chambers connected to a cluster tool. In a cluster tool, because each reaction chamber is dedicated to one type of process, the temperature of the reaction chamber in each module can be kept constant, which improves the throughput compared to a reaction chamber in which the substrate is heated up to the process temperature before each run. Additionally, in a cluster tool it is possible to reduce the time to pump the reaction space to the desired process pressure levels between substrates.

In some embodiments of the disclosure, a stand-alone reactor can be equipped with a load-lock. In that case, it is not necessary to cool down the reaction space between each run.

Once the substrate has been loaded into a suitable reaction chamber, the substrate may be heated to a suitable temperature for contacting the substrate with a plasma generated from a hydrogen containing gas. In some embodiments of the disclosure, process block 110 of exemplary selective formation process 100 may comprise heating the substrate to a temperature greater than 0° C., or greater than 100° C., or greater than 200° C., or greater than 300° C., or greater than 400° C., or even greater the 450° C. In some embodiments of the disclosure the substrate may be heated to a temperature between 20° C. and 450° C., or between 30° C. and 350° C., or between 40° C. and 300° C., or between 50° C. and 200° C., or even between 60° C. and 150° C.

The exemplary selective formation process 100 may continue by means of a process block 120 comprising contacting the substrate with a plasma generated from a hydrogen containing gas. As a non-limiting example, the substrate may be disposed within a plasma enhanced atomic layer deposition (PEALD) reaction chamber and a hydrogen based plasma may generated either within the reaction chamber or introduced into the reaction chamber and subsequently contacts the substrate.

In some embodiments of the disclosure, the hydrogen containing gas comprises at least one of hydrogen (H₂), or ammonia (NH₃).

In some embodiments, the hydrogen containing gas may be introduced into the reaction chamber at a flow rate greater than 25 sccm, or greater than 50 sccm, or greater than 100 sccm, or greater than 250 sccm, or greater than 500 sccm, or even greater than 1000 sccm. In some embodiments, the hydrogen containing gas may be introduced into the reaction chamber at a flow rate between 25 sccm and 1000 sccm.

In some embodiments, in addition to controlling the flow of the hydrogen containing gas into the reaction chamber the pressure within the reaction chamber may also be controlled to a pressure between 10e⁻⁶Torr and 1000 Torr, or between 10e⁻⁵Torr and 760 Torr, or between 10e⁻⁴and 100 Torr, or even between 0.01 Torr and 50 Torr.

In some embodiments, the hydrogen containing gas is converted to a hydrogen based plasma by the application of RF power to the hydrogen containing gas. For example, the RF power applied to the hydrogen containing gas may be greater than 25 Watts, or greater than 50 Watts, or greater than 100 Watts, or greater than 250 Watts, or greater than 500 Watts, or even greater than 1000 Watts. In some embodiments of the disclosure, an RF power between approximately 25 Watts and 1000 Watts may be applied to the hydrogen containing gas to produce a hydrogen based plasma. The application of RF power to the hydrogen containing gas may produce a hydrogen based plasma comprising at least: hydrogen atoms, hydrogen ions, hydrogen radicals, and excited hydrogen species.

In some embodiments, contacting an exposed surface of the substrate with a plasma generated from a hydrogen containing gas may remove at least a portion of the —OH groups from the surface of the substrate.

In some embodiments of the disclosure, the plasma generated from a hydrogen containing gas may contact the substrate for a time period of between 0.1 seconds and 300 seconds, or between 0.2 seconds and 200 seconds, or between 0.5 seconds and 60 seconds, or even between 1 second and 30 seconds.

Methods for selectively depositing passivation films by vapor deposition techniques are disclosed in U.S. patent application Ser. No. 15/170,769, filed Jun. 1, 2016 (hereinafter “'769 application”), the entire disclosure of which is incorporated herein by reference for all purposes. The '769 application discloses the pre-treatment or clean of a substrate prior to selective deposition utilizing a hydrogen plasma and subsequently selectively depositing a passivation film on a metallic surface relative to a dielectric surface. In the embodiments of the current disclosure, the hydrogen plasma treatment may not be considered as a pre-treatment or a cleaning process but rather a selectivity reversal process. The embodiments of the current disclosure have found that the plasma treatment processes disclosed herein allows for the subsequent selective deposition of the passivation film on a dielectric surface relative to a metallic surface, i.e., the opposite selectivity to that disclosed in the '769 application.

Once the substrate has been contacted with the plasma generated from a hydrogen containing gas the exemplary selective formation process 100 may include a purge cycle to remove excess reactants and reaction byproducts from the reaction chamber. The exemplary process 100 may continue by means of a process block 130 comprising selectively forming a passivation film and particularly selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film.

The process block 130 and the corresponding sub-processes are illustrated in greater detail in FIG. 2 which demonstrates an exemplary cyclical deposition process 130 for selectively depositing a passivation film on a first dielectric surface relative to a second metallic surface. The previously incorporated U.S. patent application Ser. No. 15/170,769, filed Jun. 1, 2016, describes vapor phase deposition techniques for the selective deposition of a passivation film and particular to the selective deposition of organic passivation films, such as, for example, polymers including, polyimide films, polyamide films, polyuria films, polyurethane films, polythiophene films, and more. CVD of polymer films can produce greater thickness control, mechanical flexibility, conformal coverage, and biocompatibility as compared to the application of liquid precursors. Cyclical deposition processes for depositing polymers films can produce high growth rates in suitable reaction chambers. Similar to CVD, cyclical deposition processes can produce greater thickness control, mechanical flexibility, and conformality. The terms “sequential deposition” and “cyclical deposition” are employed herein to apply to processes in which the substrate is alternately or sequentially exposed to different precursors, regardless of whether the reaction mechanisms resemble atomic layer deposition (ALD), molecular layer deposition (MLD), cyclical chemical vapor deposition (CCVD), or hybrids thereof.

The exemplary cyclical deposition process 130 (FIG. 2) may proceed by means of a process block 210 comprising heating the substrate to a deposition temperature in a suitable reaction chamber. In some embodiments, the reaction chamber utilized for the selective deposition of the passivation film may be the same as that used for the prior plasma treatment, or alternative the substrate may be transferred, under a controlled environment, from a first reaction chamber to a second reaction chamber.

The deposition temperature for selective deposition of the passivation film may differ depending upon the selected reactants and can be optimized upon selection. In some embodiments, the deposition temperature for the selective deposition of the passivation film may be less than 250° C., or less than 200° C., or less than 150° C., or less than 100° C., or less than 80° C., or even between a temperature of 80° C. and 250° C. In some embodiments, the reaction chamber pressure for selective deposition of the passivation film may be from about 1 mTorr to about 1000 Torr.

In some embodiments, the selectively formed passivation film may comprise an organic film. In such embodiments the selectively deposited organic film may comprise a polyamide film, and the deposition temperature can be selected from a range of about 80° C. to about 150° C., or greater than 80° C., or greater than 90° C., or greater than 100° C., or greater than 100° C., or greater than 110° C., or greater than 120° C., or greater than 130° C., or greater than 140° C., or even greater than 150° C. In some embodiments where the selectively deposited organic film comprises a polyimide, the deposition temperature may be greater than about 160° C., or greater than about 180° C., or greater than about 190° C., or greater than about 200° C., or greater than about 210° C., or even between approximately 160° C. and 210° C.

In some embodiments, the exemplary cyclical deposition process 130 for selective vapor deposition of an organic passivation film comprises, vaporizing a first organic precursor at a first temperature to form a first precursor vapor phase reactant. In some embodiments, the first vapor phase reactant is transported to the substrate through a gas line at a second temperature. In some embodiments, the second transportation temperature is higher than the first vaporization temperature. In some embodiments, the substrate is contacted with the first vapor phase reactant for a first exposure period at a process block 220 (FIG. 2). In some embodiments, the first vapor phase reactant, or species thereof, chemically adsorbs on the substrate in a self-saturating or self-limiting fashion. The gas line can be any conduit that transports the first vapor phase reactant from the source to the substrate. In some embodiments, the substrate may be exposed to the first vapor phase reactant at a third temperature, i.e., the deposition temperature, that is higher than the first temperature.

In some embodiments the first vapor phase reactant may contact the substrate for a time period from about 0.01 seconds to about 60 seconds, or from about 0.05 seconds to about 30 seconds, or from about 0.1 seconds to about 10 seconds, or from about 0.2 seconds to about 5 seconds. The optimum exposure period can be readily determined by the skilled artisan based on the particular circumstances. In some embodiments, where batch reactors may be used, exposure periods of greater than 60 seconds may be employed.

Excess of the first vapor phase reactant (and any volatile reaction by-products) may then be removed from contact with the substrate. Such removal can be accomplished by, for example, purging (i.e., with an inert gas), pump down, moving the substrate away from a chamber or zone in which it is exposed to the first vapor phase reactant, or combinations thereof. In some embodiments, a first vapor phase reactant removal period, for example a purge period, is from about 0.01 seconds to about 60 seconds, or from about 0.05 seconds to about 30 seconds, or from about 0.1 seconds to about 10 seconds, or from about 0.2 seconds to about 5 seconds. The optimum removal period can be readily determined by the skilled artisan based on the particular circumstances. In some embodiments, where batch reactors may be used, removal periods of greater than 60 seconds may be employed.

In some embodiments, a second organic precursor may be vaporized at a fourth temperature to form the second vapor phase reactant. In some embodiments, the second vapor phase reactant is transported to the substrate through a gas line at a fifth temperature. In some embodiments, the fifth transportation temperature is higher than the fourth vaporization temperature. In some embodiments, the substrate may be contacted with the second vapor phase reactant at a sixth temperature, i.e., the deposition temperature, that is higher than the fourth temperature. In some embodiments, the sixth temperature may be substantially the same as the third temperature at which the first vapor phase reactant contacts the substrate. In some embodiments, the substrate may be exposed to a second vapor phase reactant for a second exposure period at a process block 230. In some embodiments, the second vapor phase reactant may react with the adsorbed species of the first reactant on the substrate.

In some embodiments, the second vapor phase reactant may contact the substrate for a time period from about 0.01 seconds to about 60 seconds, or from about 0.05 seconds to about 30 seconds, or from about 0.1 seconds to about 10 seconds, or from about 0.2 seconds to about 5 seconds. The optimum exposure period can be readily determined by the skilled artisan based on the particular circumstances. In some embodiments, where batch reactors may be used, exposure periods of greater than 60 seconds may be employed.

In some embodiments, excess of the second vapor phase reactant (and any volatile reaction by-product) may be removed from contact with the substrate, such that the first vapor phase reactant and the second vapor phase reactant do not mix. In some embodiments, the cyclical deposition process for the organic passivation film does not employ plasma and/or radicals, and can be considered a thermal vapor deposition process. In some embodiments, a second vapor phase reactant removal period, for example a purge period, is from about 0.01 seconds to about 60 seconds, or from about 0.05 seconds to about 30 seconds, or from about 0.1 seconds to about 10 seconds, or from about 0.2 seconds to about 5 seconds. The optimum removal period can be readily determined by the skilled artisan based on the particular circumstances. In some embodiments, where batch reactors may be used, removal periods of greater than 60 seconds may be employed.

In a process block 240, an organic passivation film is selectively deposited on the first dielectric surface relative to the second metallic surface. The skilled artisan will appreciate that selective deposition of an organic film is the result of the above-described contacting actions rather than a separate action.

The exemplary cyclical deposition process 130 (FIG. 2) may continue via a decision gate 250, wherein the decision gate is dependent on the desired thickness of the passivation film disposed over the first dielectric surface. If the thickness of the passivation layer is less than desired then the cyclical deposition phase 205 of exemplary process 130 may return to the process block 220 and continue through an additional deposition cycle. For example, in some embodiments, the above-described contacting, removing (and/or halting supply), decision gate actions, i.e., process blocks 220, 230, and 240 as well as intervening purge cycles, may be considered a unit deposition cycle. In other words, the cyclical deposition phase 205 of exemplary process 130 may perform one or more unit deposition cycles, wherein a unit deposition cycle may comprise: contacting the substrate with a first vapor phase reactant, purging excess first vapor phase reactant and reaction by-product, contacting the substrate with a second vapor phase reactant, and purging excess second vapor phase reactant and reaction by-product.

Therefore, in some embodiments, a unit deposition cycle may be repeated one or more times until an organic passivation film of a desired thickness is selectively deposited. Such a selective deposition cycle can be repeated by a cyclical deposition phase 205 until a passivation film of sufficient thickness is left on the substrate and the deposition is complete. The selective deposition cycle can include additional acts, need not be in the same sequence nor identically performed in each repetition, and can be readily extended to more complex vapor deposition techniques. For example, a selective cyclical deposition cycle can include additional reactant supply processes, such as the supply and removal of additional reactants in each cycle or in selected cycles. Though not shown, the process may additionally comprise treating the deposited film to form a polymer (for example, UV treatment, annealing, etc.).

Various precursors can be used for the above described processes. For example, in some embodiments, the first precursor or reactant is an organic reactant such as a diamine, e.g., 1,6-diaminohexane (DAH), or any other monomer with two reactive groups. In some embodiments, the first precursor may comprise a diamine and may be vaporized to produce a first vapor phase reactant comprising a diamine vapor which is transported to the reaction chamber and contacts the substrate.

In some embodiments, the second reactant or precursor is also an organic reactant capable of reacting with adsorbed species of the first vapor phase reactant under the deposition conditions. For example, the second precursor may comprise an anhydride, such as furan-2,5-dione (maleic acid anhydride) and methods may comprise vaporizing the anhydride and transporting a second vapor phase reactant comprising the anhydride vapor to the reaction chamber and contacts the substrate. In some embodiments of the disclosure, the anhydride may comprise a dianhydride, e.g., pyromellitic dianhydride (PMDA), or any other monomer with two reactive groups which will react with the first reactant.

In some embodiments, the substrate is contacted with the first vapor phase reactant prior to being contacted with the second vapor phase reactant. Thus, in some embodiments the substrate is contacted with an amine, such as a diamine, for example 1,6-diaminohexane (DAH) prior to being contacted with another precursor. However, in some embodiments the substrate may be contacted with the second vapor phase reactant prior to being contacted with the first vapor phase reactant. Thus, in some embodiments the substrate is contacted with an anhydride, such as furan-2,5-dione (maleic acid anhydride), or more particularly, a dianhydride, e.g., pyromellitic dianhydride (PMDA) prior to being contacted with another precursor.

In some embodiments, different precursor may be used to tune the organic passivation film properties. For example, a polyimide film may be deposited using 4,4′-oxydianiline or 1,4-diaminobenzene instead of 1,6-diaminohexane to obtain a more rigid structure with more aromaticity and increased dry etch resistance.

In some embodiments, the precursors do not contain metal atoms. In some embodiments, the precursors do not contain semi-metal atoms. In some embodiments, one of the precursors comprises metal or semi-metal atoms. In some embodiments, the precursors contain carbon and hydrogen and one or more of the following elements: N, O, S, P or a halide, such as Cl or F. In some embodiments, the first precursor may comprise, for example, adipoyl chloride (AC).

In some embodiments, the precursors and their associated vapor phase reactants for use in the selective cyclical deposition processes described herein may have the general formula:

R¹(NH₂)₂ (1)

wherein R¹may be an aliphatic carbon chain comprising 1-5 carbon atoms, 2-5 carbon atoms, 2-4 carbon atoms, 5 or fewer carbon atoms, 4 or fewer carbon atoms, 3 or fewer carbon atoms, or 2 carbon atoms. In some embodiments, the bonds between carbon atoms in the reactant or precursor may be single bonds, double bonds, triple bonds, or some combination thereof. Thus, in some embodiments a reactant may comprise two amino groups. In some embodiments, the amino groups of a reactant may occupy one or both terminal positions on an aliphatic carbon chain. However, in some embodiments, the amino groups of a reactant may not occupy either terminal position on an aliphatic carbon chain. In some embodiments, a precursor and associated vapor phase reactant may comprise a diamine. In some embodiments, a vapor phase reactant may comprise an organic precursor selected from the group of 1,2-diaminoethane (1), 1,3-diaminopropane (1), 1,4-diaminobutane (1), 1,5-diaminopentane (1), 1,2-diaminopropane (1), 2,3-butanediamine, 2,2-dimethyl-1,3-propanediamine (1).

In some embodiments, precursors and associated vapor phase reactants for use in the selective cyclical deposition processes described herein may have the general formula:

R²(COCl)₂ (2)

wherein R²may be an aliphatic carbon chain comprising 1-3 carbon atoms, 2-3 carbon atoms, or 3 or fewer carbon atoms. In some embodiments, the bonds between carbon atoms in the reactant or precursor may be single bonds, double bonds, triple bonds, or some combination thereof. In some embodiments, a reactant may comprise a chloride. In some embodiments, a reactant may comprise a diacyl chloride. In some embodiments, a reactant may comprise an organic precursor selected from the group of: oxalyl chloride (I), malonyl chloride, and fumaryl chloride.

In some embodiments, a reactant comprises an organic precursor selected from the group of 1,4-diisocyanatobutane, or 1,4-diisocyanatobenzene. In some embodiments, a reactant comprises an organic precursor selected from the group of: terephthaloyl dichloride, alkyldioyl dichlorides, such as hexanedioyl dichloride, octanedioyl dichloride, nonanedioyl dichloride, decanedioyl dichloride, or terephthaloyl dichloride. In some embodiments, a reactant comprises an organic precursor selected from the group of 1,4-diisothiocyanatobenzene, or terephthalaldehyde. In some embodiments, a reactant being vaporized can be also a diamine, such as, for example, 1,4-diaminobenzene, decane-1,10-diamine, 4-nitrobenzene-1,3-diamine, 4,4′-oxydianiline, or ethylene diamine. In some embodiments, a reactant can be a terephthalic acid bis(2-hydroxyethyl) ester. In some embodiments, a reactant can be a carboxylic acid, for example. alkyl-, alkenyl-, alkadienyl-dicarboxylic or tricarboxylic acid, such as ethanedioic acid, propanedioic acid, butanedioic acid, pentanedioic acid or propane-1,2,3-tricarboxylic acid. In some embodiments, a reactant can be an aromatic carboxylic or dicarboxylic acid, such as benzoic acid, benzene-1,2-dicarboxylic acid, benzene-1,4-dicarboxylic acid or benzene-1,3-dicarboxylic acid. In some embodiments, a reactant may comprise one or more OH-groups bonded to a hydrocarbon. In some embodiments, a reactant can be selected from the group of diols, triols, aminophenols such as 4-aminophenol, benzene-1,4-diol or benzene-1,3,5-triol. In some embodiments, a reactant can be 8-quinolinol. In some embodiments, the reactant can comprise alkenylchlorosilanes, like alkenyltrichlorosilanes, such as 7-octenyltrichlorosilane.

In some embodiments, a reactant may have a vapor pressure greater than about 0.5 Torr, or greater than 0.1 Torr, or greater than 0.2 Torr, or greater than 0.5 Torr, or even greater than 1 Torr or greater at a temperature of about 20° C. or room temperature. In some embodiments, a reactant may have a boiling point less than about 400° C., less than 300° C., less than about 250° C., less than about 200° C., less than about 175° C., less than about 150° C., or less than about 100° C., or even between 100° C. and 400° C.

In some embodiments, the organic passivation film selectively deposited on the first dielectric surface of the substrate may have a thickness less than 50 nanometers, or less than 20 nanometers, or less than 10 nanometers, or less than 5 nanometers, or less than 3 nanometers, or less than 2 nanometers, or less than 1 nanometer, or even between approximately 1 nanometer and 50 nanometers. In some embodiments, the ratio of material deposited on the first dielectric surface relative to the second metallic surface may be greater than or equal to 200:1, or greater than or equal to 100:1, or greater than or equal to 50:1, or greater than or equal to 25:1, or greater than or equal to 20:1, or greater than or equal to 15:1, or greater than or equal to 10:1, or greater than or equal to 5:1, or greater than or equal to 3:1, or greater than or equal to 2:1.

Once the organic passivation film has been selectively deposited to a desired thickness, the exemplary selective passivation film formation process 130 may continue by means of a process block 260 comprising etching the passivation film disposed on, or directly on, the second metallic surface. In some embodiments, the etch process may remove the same amount, or thickness, of material disposed on the first dielectric surface and disposed on the second metallic surface. That is, in some embodiments, the etch rate of the organic passivation film deposited on the first dielectric surface may be substantially similar to the etch rate of the organic passivation film deposited on the second metallic surface. Due to the selective nature of the deposition processes described herein, the amount of organic material deposited on the second metallic surface of the substrate is substantially less than the amount of organic material deposited on the first dielectric surface of the substrate. Therefore, an etch process may remove the entirety of the deposited organic material on, or directly on, the second metallic surface while at least a portion of the deposited organic material may remain on, or directly on, the first dielectric surface.

In some embodiments of the disclosure, etching the passivation film disposed on the second metallic surface may be performed utilizing an oxygen containing gas or a plasma generated from an oxygen containing gas.

In some embodiments, the etch process may comprise, exposing the substrate to a plasma. In some embodiments, the plasma may be generated from an oxygen containing gas and the plasma may comprise at least, oxygen atoms, oxygen radicals, excited oxygen species, or combinations thereof. In some embodiments, the plasma may be generated from a hydrogen containing gas and the plasma may comprise at least, hydrogen atoms, hydrogen radicals, excited hydrogen species, or combinations thereof. In some embodiments, the plasma may also comprise noble gas species, such as, for example, argon (Ar) species, or helium (He) species. In some embodiments the plasma may consist essentially of noble gas species. In some instances, the plasma may comprise other species, for example nitrogen atoms, nitrogen radicals, nitrogen plasma, or combinations thereof.

In some embodiments, the etch process may comprise exposing the substrate to an etchant comprising oxygen, for example ozone (O₃).

In some embodiments, the substrate may be exposed to an etchant at a substrate temperature of between about 30° C. and about 500° C., or between about 100° C. and about 400° C. In some embodiments, the etchant may be supplied in one continuous pulse or may be supplied in multiple shorter pulses.

As noted above, in some embodiments, O₃(e.g., O₃/N₂) can be used in the etch process for removal of the organic passivation film disposed over the second metallic surface. In some embodiments, the etch process may be performed at a substrate temperature of about 20° C. to about 500° C., or about 50° C. to about 300° C., or about 100° C. to about 250° C., or even about 125° C. to about 200° C.

In some embodiments, the etch process may be performed at an etch rate of about 0.05 nm/min to about 50.0 nm/min, or about 0.1 nm/min to about 5 nm/min, or even about 0.2 nm/min to about 2.5 nm/min. In some embodiments, for single wafer or small batch (e.g., 5 wafers or less) processing, a low O₃concentration etch process may be used, wherein the low O₃concentration etch process may be performed at 0.01 Torr to 200 Torr, or about 0.1 Torr to 100 Torr (e.g., 2 Torr). Etchant pulsing can be between 0.01 sec and 20 seconds, or between 0.05 sec and 10 sec, or between 0.1 sec and 2 seconds (e.g., 0.5 sec pulse/0.5 sec purge of O₃). O₃flow can range from 0.01 slm to 1 slm, or from 0.01 slm to 0.250 slm. Inert (e.g., N₂) carrier gas flow can range from 0.1 slm to 20 slm, or from 0.5 slm to 5 slm (e.g., 1.2 slm). In some embodiments, a high O₃concentration etch process may be used, wherein the high O₃concentration etch process is performed at 1-100 Torr, or at 5-20 Torr (e.g., 9 Torr), with longer exposures per cycle. For example, O₃exposure times can be between 0.1 sec and 20 s, or between 0.5 sec and 5 seconds (e.g., 1 sec pulse/1 sec purge of O₃). O₃flow for such high O₃concentration processes can be between 0.1 slm and 2.0 slm, or between 0.5 slm and 1.5 slm (e.g., 750 sccm), with an inert (e.g., N₂) dilution flow of 0.1 slm to 20 slm, or 0.5 slm to 5 slm (e.g., 1.2 slm).

Upon the completion of the etch process, i.e., the process block 260 (FIG. 2), any portion of the organic passivation film disposed over the second metallic surface is removed leaving the second metallic surface exposed, while maintaining a substantial thickness of the organic passivation film disposed over the first dielectric surface. The exemplary selective passivation film formation process 130 may then conclude by means of a process block 270 wherein the exemplary process exits.

After selectively forming the passivation film on the first dielectric surface, a method for selectively forming a target film on a substrate as illustrated by exemplary process 100 may continue by means of a process block 140 (FIG. 1) comprising selectively depositing a target film from vapor phase reactants on the second metallic surface relative to the passivation film.

In more detail, the selective deposition of the target film from vapor phase reactants on the second metallic surface relative to the passivation film may be achieved utilizing a selective cyclical deposition process, such as, for example, atomic layer deposition (ALD), cyclical chemical vapor deposition (CCVD), or hybrids thereof.

A non-limiting example embodiment of a cyclical deposition process may include atomic layer deposition (ALD), wherein ALD is based on typically self-limiting reactions, whereby sequential and alternating pulses of reactants are used to deposit about one atomic (or molecular) monolayer of material per deposition cycle. The deposition conditions and precursors are typically selected to provide self-saturating reactions, such that an absorbed layer of one reactant leaves a surface termination that is non-reactive with the gas phase reactants of the same reactants. The substrate is subsequently contacted with a different reactant that reacts with the previous termination to enable continued deposition. Thus, each cycle of alternated pulses typically leaves no more than about one monolayer of the desired material. However, as mentioned above, the skilled artisan will recognize that in one or more ALD cycles more than one monolayer of material may be deposited, for example, if some gas phase reactions occur despite the alternating nature of the process.

In an ALD process utilized for the selective deposition of a target film a unit deposition cycle may comprise: exposing the substrate to a first vapor phase reactant, removing any unreacted first reactant and reaction byproducts from the reaction chamber, and exposing the substrate to a second vapor phase reactant, followed by a second removal step.

Precursors may be separated by inert gases, such as argon (Ar) or nitrogen (N₂), to prevent gas-phase reactions between reactants and enable self-saturating surface reactions. In some embodiments, however, the substrate may be moved to separately contact a first vapor phase reactant and a second vapor phase reactant. Because the reactions self-saturate, strict temperature control of the substrates and precise dosage control of the precursors may not be required. However, the substrate temperature is preferably such that an incident gas species does not condense into monolayers nor decompose on the surface. Surplus chemicals and reaction byproducts, if any, are removed from the substrate surface, such as by purging the reaction chamber or by moving the substrate, before the substrate is contacted with the next reactive chemical. Undesired gaseous molecules can be effectively expelled from a reaction chamber with the help of an inert purging gas. A vacuum pump may be used to assist in the purging.

In some embodiments, the cyclical deposition process may be a hybrid ALD/CVD or a cyclical CVD process. For example, in some embodiments, the growth rate of the ALD process may be low compared with a CVD process. One approach to increase the growth rate may be that of operating at a higher substrate temperature than that typically employed in an ALD process, resulting in some portion of a chemical vapor deposition process, but still taking advantage of the sequential introduction of precursors, such a process may be referred to as cyclical CVD. In some embodiments, a cyclical CVD process may comprise the introduction of two or more precursors into the reaction chamber wherein there may be a time period of overlap between the two or more precursors in the reaction chamber resulting in both an ALD component of the deposition and a CVD component of the deposition. For example, a cyclical CVD process may comprise the continuous flow of a first precursor and the periodic pulsing of a second precursor into the reaction chamber.

An exemplary selective cyclical deposition process 140, and its constituent sub-processes, for selectively depositing a target film on a second metallic surface is illustrated with reference to FIG. 3. In more detail, the exemplary selective cyclical deposition process 140 may commence by means of a sub-process block 310 comprising loading the substrate into a suitable reaction chamber and heating the substrate to a desired deposition temperature.

In some embodiments, the reaction chamber may comprise a reaction chamber associated with an atomic layer deposition system, a plasma enhanced atomic layer deposition system, as well as chemical vapor deposition (CVD) reaction chambers equipped with appropriate equipment and means for providing precursors.

In some embodiments, the reaction chamber utilized for the selective deposition of the target film may also be utilized to contact the substrate with a plasma generated from a hydrogen containing gas, as well as for selectively forming the passivation film on the first dielectric surface. In some embodiments, separate reaction chambers may be utilized for contacting the substrate with a hydrogen based plasma, selectively forming the passivation film, and selectively depositing the target film. In embodiments wherein separate reaction chamber are utilized for the processes disclosed herein the substrate may be transported between reaction chambers under a controlled environment and the separate reaction chamber may form a single cluster tool.

In some embodiments, the sub-process block 310 (FIG. 3) may comprise, heating the substrate to a suitable deposition temperature, generally at lowered pressure within the reaction chamber. Deposition temperatures are generally maintained below the thermal decomposition temperature of the reactants but at a high enough level to avoid condensation of the reactants and provide the activation energy for the desired surface reactions. In some embodiments, the deposition temperature may be below 500° C., or below 400° C., or below 300° C., or below 200° C., or below 100° C. In some embodiments, the deposition temperature may be between 80° C. and 300° C.

In some embodiments, the reaction chamber pressure may be from about 1 mTorr to about 1000 mTorr.

Once the substrate is heated to a suitable deposition temperature and the pressure within the reaction chamber has been regulated, the exemplary selective cyclical deposition process 140 (FIG. 3) may continue by means of a sub-process block 320 comprising contacting the substrate with a first vapor phase reactant comprising a metal precursor. Selective deposition of metallic materials, such as, elemental metals and metal oxides, relative to organic materials such as the passivation films disclosed herein, can be facilitated by employing hydrophobic reactants, as disclosed in U.S. Provisional Patent Application No. 62/322,396, filed May 5, 2016 the entire disclosure of which is incorporated herein by reference for all purposes. Therefore, in some embodiments of the disclosure, the metal precursor may comprise a hydrophobic reactant comprising a metal species. For more detail regarding the possible hydrophobic reactants which can be utilized for selective deposition of a metallic film see the incorporated U.S. Provisional Patent Application No. 62/322,396.

In some embodiments of the disclosure, the metal precursor may comprise a cyclopentadienyl based metal precursor. In some embodiments, the cyclopentadienyl based metal precursor comprises a metal selected from the group comprising: platinum (Pt), hafnium (Hf), ruthenium (Ru), nickel (Ni), cobalt (Co), zirconium (Zr), rhenium (Re), niobium (Nb), or tantalum (Ta).

In some embodiment, the target film may comprise an elemental metal and the cyclopentadienyl based metal precursor may comprise: Pt(CpMe)Me₃, Ru(CpEt)(dmp), Ru(CpEt)(pyr), Ru(CpEt)₂, Ni(Cp)₂, Ni(Chex)(Cp), Co(Cp)₂, Co(CpMe)₂, or CoCp(ⁱPrAMD).

In some embodiments, the target film may comprise a metal oxide and the cyclopentadienyl based metal precursor may comprise: Pt(CpMe)Me₃, Hf(Cp)(NMe₂)₃, Hf(Cp₂CMe₂)Me(OMe), Hf(Cp₂CMe₂)Me₂, Hf(CpMe)(NMe₂)₃, Hf(CpMe)₂(mmp)Me, Hf(CpMe)₂(OⁱPr)Me, Hf(CpMe)₂(OMe)Me, Hf(CpMe)₂Me₂, Ru(CpEt)₂, Ni(CpEt)₂, NiCp₂, Co(Cp)(CO)₂, Co(Cp)₂, Zr(Cp₂CMe₂)Me(OMe), Zr(Cp₂CMe₂)Me₂, Zr(CpEt)(NMe₂)₃, Zr(CpMe)(NMe₂)₃, Zr(CpMe)₂Me(OMe), Zr(CpMe)₂Me₂, or Zr(CpMe)CHT.

In some embodiments, the target film may comprise a metal nitride and the cyclopentadienyl based metal precursor may comprise: ZrCp₂(NMe₂)₂, or TaCp(N^tBu)(NEt₂)₂.

In some embodiments of the disclosure, the metal precursor may contact the substrate for a time period between 0.01 seconds to 60 seconds, or between 0.05 seconds to 30 seconds, or between 0.1 seconds to 10 seconds, or even between 0.2 seconds to 5 seconds. The optimum contact period can be readily determined by the skilled artisan based on the particular circumstances. In some embodiments, such as when batch reactors may be used, the metal precursor may contact the substrate for a time period greater than 60 seconds.

Excess metal precursor and reaction by-product, if any, may be removed by purging the reaction chamber, for example with an inert gas, and/or by vacuum. The purge step may be carried out for time sufficient to remove substantially all of the excess metal precursor and reaction byproducts from the substrate and reaction chamber. In some embodiments, the purge is carried out for a time period between 0.1 seconds to 60 seconds, or between 0.5 seconds to 20 seconds, or between 1 second to 10 seconds. Depending on the circumstances, in some embodiments a purge of longer than 60 seconds may be carried out.

After purging the metal precursor from the reaction chamber, the exemplary selective deposition process 140 (FIG. 3) may continue by means of a sub-process block 330 comprising contacting the substrate with a second vapor phase reactant.

In more detail, the selection of the second vapor phase reactant in the sub-process block 330 is dependent on the desired target film to be selectively deposited. In some embodiments of the disclosure, the target film may comprise an elemental metal and the second vapor phase reactant may comprise a reducing agent. In some embodiments of the disclosure, the target film may comprise a metal oxide and the second vapor phase reactant may comprise an oxygen precursor. In some embodiments, the target film may comprise a metal nitride and the second vapor phase reactant may comprise a nitrogen precursor.

In embodiments wherein the target film comprises an elemental metal, the second vapor phase reactant may comprise a reducing agent selected from the group comprising: tertiary butyl hydrazine (C₄H₁₂N₂), hydrogen (H₂), a hydrogen (H₂) plasma, ammonia (NH₃), an ammonia (NH₃) plasma, hydrazine (N₂H₄), silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), germane (GeH₄), digermane (Ge₂H₆), borane (BH₃), diborane (B₂H₆), alcohols, aldehydes, carboxylic acids, or amines.

In embodiments wherein the target film comprises a metal oxide, the second vapor phase reactant may comprise an oxygen precursor selected from the group comprising: ozone (O₃), molecular oxygen (O₂), oxygen atoms (O), an oxygen plasma, oxygen radicals, oxygen excited species, water (H₂O), and hydrogen peroxide (H₂O₂).

In embodiments wherein the target film comprises a metal nitride, the second vapor phase reactant may comprise a nitrogen precursor selected from the group comprising: molecular nitrogen (N₂), ammonia (NH₃), hydrazine (N₂H₄), a hydrazine derivative, or a nitrogen-based plasma. In some embodiments, the hydrazine derivative may comprise an alkyl-hydrazine including at least one of: tertbutylhydrazine (C₄H₉N₂H₃), methylhydrazine (CH₃NHNH₂), or dimethylhydrazine ((CH₃)₂N₂H₂). In some embodiments, a nitrogen-based plasma may be generated by the application of RF power to a nitrogen containing gas and the nitrogen-based plasma may comprise at least, atomic nitrogen (N), nitrogen ions, nitrogen radicals, and excited species of nitrogen.

In some embodiments of the disclosure, the second vapor phase reactant may contact the substrate for a time period between 0.01 seconds to 60 seconds, or between 0.05 seconds to 30 seconds, or between 0.1 seconds to 10 seconds, or even between 0.2 seconds to 5 seconds. The optimum contact period can be readily determined by the skilled artisan based on the particular circumstances. In some embodiments, such as when batch reactors may be used, the second vapor phase reactant may contact the substrate for a time period greater than 60 seconds.

Excess second vapor phase reactant and reaction by-product, if any, may be removed be purging, for example with an inert gas, and/or by vacuum. The purge step may be carried out for time sufficient to remove substantially all of the second vapor phase reactant. In some embodiments, the purge is carried out for a time period between 0.1 seconds to 60 seconds, or between 0.5 seconds to 20 seconds, or between 1 second to 10 seconds. Depending on the circumstances, in some embodiments a purge of longer than 60 seconds may be carried out.

The exemplary selective cyclical deposition method 140 (FIG. 3) may include a cyclical deposition phase 305, wherein a unit deposition cycle of the cyclical deposition phase 305 may comprise: contacting the substrate with a first vapor phase reactant 320 (e.g., a metal precursor), purging the reaction chamber, contacting the substrate with a second vapor phase reactant 330, and again purging the reaction chamber. In some embodiments, the cyclical deposition phase 305 may be repeated one or more times, i.e., repeating a unit deposition cycle one or more times. The cyclical deposition phase 305 may further include a decision gate 340 which determines if the cyclical deposition phase 305 continues or exits via a sub-process block 350. The decision gate 340 is determined based on the thickness of the target film deposited, for example, if the thickness of the target film is insufficient for the desired device structure, then the cyclical deposition phase 305 may return to the sub-process block 320 and the processes of contacting the substrate with the metal precursor and contacting the substrate with the second vapor phase reactant 330 may be repeated one or more times. Once the target film has been deposited to a desired thickness the exemplary process 140 may exit via the sub-process block 350 and the substrate may be subjected to additional processes to complete the selective formation of the target film on the second metallic surface.

Any target film deposited on, or directly on, the passivation film may be removed by an etch back process. Because the target film is deposited selectively on the second metallic surface, any target film left over the passivation film surface will be thinner than the passivation film formed on the first dielectric surface. Accordingly, the etch back process can be controlled to remove the entirety of the target film disposed over the passivation film without removing all of the target film disposed over the second metallic surface. Repeated selective deposition and etch back processes may result in an increasing thickness of the target film on the second metallic surface with each cycle of deposition and etch. Alternatively, any target film may be removed during subsequent removal of the passivation film in a lift-off process. As is known in the art, a lift-off process removes an overlying material by undercutting with removal of an underlying material. Any target film formed on the passivation film in a short selective deposition process tends to be non-continuous, allowing access of the etchant to the underlying film to be removed. The lift-off etch need not fully remove the passivation film in order to remove all of the undesired target film disposed over the surface of the passivation film, such that either a direct etch or the lift-off method can be used to remove the target film disposed on the surface of the passivation film in a cyclical selective deposition and removal process.

The exemplary method for selectively forming a target film on a substrate (exemplar process 100 of FIG. 1) may continue by means of a process block 150 comprising selectively removing the passivation film disposed on the first dielectric surface without removing the entirety of the target film disposed on the second metallic surface. In some embodiments, the passivation film may comprise a polymer film and selectively removing the passivation film may comprise exposing the passivation film to an oxidation process. For example, the oxidation process may be performed utilizing ozone (O₃), or an oxygen based plasma.

In some embodiments, the selective removal of the passivation film may comprise exposing the substrate to a plasma. In some embodiments, the plasma may comprise an oxygen based plasma including: oxygen atoms, oxygen radicals, oxygen plasma, or combinations thereof. In some embodiments, the plasma may comprise a hydrogen based plasma including: hydrogen atoms, hydrogen radicals, hydrogen plasma, or combinations thereof. In some embodiments, the plasma may also comprise noble gas species, for example Ar or He species. In some embodiments the plasma may consist essentially of noble gas species. In some instances, the plasma may comprise other species, for example nitrogen atoms, nitrogen radicals, nitrogen plasma, or combinations thereof. In some embodiments, the selective removal process may comprise exposing the substrate to an etchant comprising oxygen, for example O₃. In some embodiments, the substrate may be exposed to an etchant at a temperature of between about 30° C. and about 500° C., preferably between about 100° C. and about 400° C. In some embodiments, the etchant may be supplied in one continuous pulse or may be supplied in multiple shorter pulses. As noted above, the passivation film removal can be used to lift-off any remaining target film disposed over the passivation film, either in a complete removal of the passivation film or in a partial removal of the passivation film in a cyclical selective deposition and removal process.

The methods of the disclosure may be further demonstrated with reference to FIGS. 4A-4E which illustrate exemplary cross-sectional views of semiconductor structures formed by selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface according to the embodiments of the disclosure.

In more detail, FIG. 4A illustrates a semiconductor structure 400 which may comprise, as a non-limiting example, a portion of a partially fabricated semiconductor device including a dielectric material 402, such as, a silicon oxide. As a non-limiting example, the dielectric 402 may function as an interlayer dielectric film. In some embodiments, the dielectric material 402 comprises an exposed dielectric surface 404, such as, for example, a silicon oxide surface, a metal oxide surface, or a metal nitride surface. The semiconductor structure 400 also includes metallic features 406, such as, copper features, for example. The metallic features 406 also comprise an exposed metallic surface 408, such as, a copper surface, for example. The semiconductor structure 400 may also include metallic features 410 which may function as barrier layers to prevent the diffusion of the metallic features 406 into the surrounding dielectric material 402. As a non-limiting example, the barrier layers 410 may comprise a metallic nitride, such as, titanium nitride, for example.

The methods of the current disclosure may comprise, contacting an exposed surface of the semiconductor structure 400 with a plasma generated from a hydrogen containing gas and particular contacting the upper exposed surface comprising both a first dielectric surface 404 and a second metallic surface 408 with a plasma generated from a hydrogen containing gas. As a non-limiting example, the semiconductor structure 400 may be disposed within a reaction chamber and a hydrogen based plasma may contact the upper exposed surface of the semiconductor structure 400 for a time period of approximately 60 seconds by flowing approximately 50 sccm of hydrogen into the reaction chamber and apply an RF power of approximately 50 Watts to the hydrogen (H₂) gas.

Once the semiconductor structure 400 has been exposed to the hydrogen based plasma the selective formation of the target film may proceed by selectively forming a passivation film from vapor phase reactant on the first dielectric surface while leaving the second metallic surface free from the passivation surface. The selective formation of the passivation film may comprise two steps, namely the selective deposition of the passivation over the first dielectric surface relative to the second metallic surface and subsequently removing any portion of the passivation film disposed over the second metallic surface by an etch back process.

In more detail, FIG. 4B illustrates semiconductor structure 412 which comprises the semiconductor structure 400 of FIG. 4A after the selective deposition of the passivation film over the first dielectric surface 404 relative to the second metallic surface 406. As illustrated in FIG. 4B, the passivation film 414 is substantially thicker over the dielectric surfaces compared with the passivation film thickness over the metallic surfaces. As a non-limiting example, the passivation film may comprise a polyimide film deposited utilizing the cyclical deposition process described herein employing pyromellitic dianhydride (PMDA) as the first organic precursor and 1,6-diaminohexane (DAH) as the second organic precursor, wherein the substrate temperature during deposition may range from about 150° C. to about 250° C., or from about 170° C. to about 210° C., and the pressure in the reaction chamber during deposition can be regulated in a range from about 1 mTorr to about 760 Torr, or from about 100 mTorr to about 100 Torr.

Upon completion of the selective deposition of the passivation film the methods of the disclosure may continue by, removing any portion of the passivation film deposited over the metallic surfaces utilizing an etch back process. Since the thickness of the passivation film is considerably greater over the dielectric surfaces the portion of the passivation film disposed over the metallic surfaces, resulting from a less than 100% deposition selectivity, can be completed removed while maintaining a substantial thickness of the passivation film disposed over the dielectric surfaces. For example, FIG. 4C illustrates a semiconductor structure 416 which comprises the semiconductor structure 412 (FIG. 4B) after the etch back process and demonstrates that a portion of the passivation film 414 remains disposed over the dielectric surfaces 404 while the metallic surfaces 408 are free from the passivation film, i.e., the entirety of the passivation film disposed on the metallic surfaces 408 is removed. As a non-limiting example, the etch back process may comprise exposing the passivation film to an oxygen containing etchant, such as, ozone (O₃), for example. The passivation film may be exposed to the ozone (O₃) while regulating the substrate temperature between about 30° C. and about 500° C., or between about 100° C. and about 400° C., and the ozone (O₃) etchant may remove the passivation film at a rate of about 0.05 nm/min to about 50 nm/min, or about 0.1 nm/min to about 5 nm/min, or about 0.2 nm/min to about 2.5 nm/min.

The methods of the disclosure may continue by selectively depositing a target film from vapor phase reactants on the second metallic surface relative to the passivation film. For example, FIG. 4D illustrates a semiconductor structure 418 which comprises the target film 420 disposed directly on the surface of metallic features 406 between the masking passivation film 414 disposed over the surface of dielectric material 402. As a non-limiting example, the target film 420 may comprise a zirconium oxide film deposited utilizing the cyclical deposition process described herein employing bis(methylcyclopentadienyl)methoxymethyl zirconium as the metal precursor and water (H₂O) as the oxygen precursor, wherein the substrate temperature during deposition may range from about 275° C. to about 325° C. and the pressure in reaction chamber during deposition can be regulated in a range from about 1 mTorr to about 760 Torr, or from about 100 mTorr to about 100 Torr.

It should be noted that structure 418 (FIG. 4D) illustrates an exemplary selective deposition of the target film 420 which is 100% selective, i.e., none of the target film is disposed over the passivation film. If the target film is deposited with less than 100% selectivity, then any target film disposed over the passivation film 414 may be removed by an etch back process or a subsequent lift-off process as previously described herein.

Once the target film has been deposited to a desired thickness, the remaining passivation film may be selectively removed from over the first dielectric surface without removing the entirety of the target film disposed over the metallic surfaces. For example, FIG. 4E illustrates the semiconductor structure 422 which demonstrates the semiconductor structure 418 (FIG. 4D) after the selective removal of the passivation film while maintaining a thickness of the target film disposed over the metallic surfaces. As a non-limiting example, the passivation film may be selectively removed by selectively etching the passivation film with a hydrogen based plasma generated using 100 Watts of RF power at a temperature of 300° C.

The example embodiments of the disclosure described above do not limit the scope of the invention, since these embodiments are merely examples of the embodiments of the invention, which is defined by the appended claims and their legal equivalents. Any equivalent embodiments are intended to be within the scope of this invention. Indeed, various modifications of the disclosure, in addition to those shown and described herein, such as alternative useful combination of the elements described, may become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising: contacting the substrate with a plasma generated from a hydrogen containing gas;selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film; andselectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film,wherein selectively forming the passivation film comprises a cyclical deposition process.
2. The method of claim 1, wherein the hydrogen containing gas comprises at least one of hydrogen (H2), or ammonia (NH3).
3. The method of claim 1, wherein selectively forming the passivation film comprises, selectively vapor depositing an organic film on the first dielectric surface.
4. The method of claim 1, wherein selectively forming the passivation film further comprises etching the passivation film disposed on the second metallic surface.
5. The method of claim 1, wherein the cyclical deposition process comprises a molecular layer deposition process.
6. The method of claim 1, wherein the target film comprises: a metal oxide, a metal nitride, or an elemental metal.
7. The method of claim 1, further comprises etching any target film disposed on the passivation film post selective deposition of the target film.
8. The method of claim 1, further comprising selectively removing the passivation film disposed over the first dielectric surface without removing the entirety of the target film.
9. A semiconductor structure formed according to the method of claim 1.
10. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising: contacting the substrate with a plasma generated from a hydrogen containing gas;selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film; andselectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation filmwherein selectively forming the passivation film comprises, selectively vapor depositing an organic film on the first dielectric surface, andwherein selectively vapor depositing an organic film comprises, selectively depositing a polymer film on the first dielectric surface.
11. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising: contacting the substrate with a plasma generated from a hydrogen containing gas;selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film; andselectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film,wherein selectively forming the passivation film further comprises etching the passivation film disposed on the second metallic surface, andwherein etching the passivation film disposed on the second metallic surface is performed utilizing an oxygen containing gas, or a plasma generated from an oxygen containing gas.
12. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising: contacting the substrate with a plasma generated from a hydrogen containing gas;selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film; andselectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film,wherein selectively forming the passivation film further comprises etching the passivation film disposed on the second metallic surface, andwherein etching the passivation film disposed on the second metallic surface is performed utilizing a hydrogen based plasma.
13. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising: contacting the substrate with a plasma generated from a hydrogen containing gas;selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film; andselectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film,wherein selectively depositing the target film comprises a cyclical deposition process.
14. The method of claim 13, wherein the cyclical deposition process comprises performing one or more unit deposition cycles, wherein a unit deposition cycle comprises: contacting the substrate with a first vapor phase reactant comprising a metal precursor; andcontacting the substrate with a second vapor phase reactant.
15. The method of claim 14, wherein the second vapor phase reactant comprises: a reducing agent for the selective deposition of an elemental metal, an oxygen precursor for the selective deposition of a metal oxide, or a nitrogen precursor for the selective deposition of a metal nitride.
16. The method of claim 14, wherein the metal precursor comprises a cyclopentadienyl based metal precursor.
17. The method of claim 16, wherein the cyclopentadienyl based metal precursor comprises a metal selected from the group comprising: platinum (Pt), hafnium (Hf), ruthenium (Ru), nickel (Ni), cobalt (Co), zirconium (Zr), rhenium (Re), niobium (Nb), or tantalum (Ta).
18. A method for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface, the method comprising: contacting the substrate with a plasma generated from a hydrogen containing gas;selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film;selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film; andselectively removing the passivation film disposed over the first dielectric surface without removing the entirety of the target film,wherein the passivation film comprises a polymer film and selectively removing the passivation film comprises exposing the passivation film to an oxidation process.
19. The method of claim 18, wherein the oxidation process is performed utilizing ozone (O3), or an oxygen based plasma.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Patent Application Ser. No. 62/940,705 filed Nov. 26, 2019 titled METHODS FOR SELECTIVELY FORMING A TARGET FILM ON A SUBSTRATE COMPRISING A FIRST DIELECTRIC SURFACE AND A SECOND METALLIC SURFACE, the disclosures of which are hereby incorporated by reference in their entirety.

US Referenced Citations (771)

Number	Name	Date	Kind
3197682	Klass et al.	Jul 1965	A
3634740	Stevko	Jan 1972	A
3916270	Wachtler et al.	Oct 1975	A
3983401	Livesay	Sep 1976	A
4099041	Berkman et al.	Jul 1978	A
4184188	Briglia	Jan 1980	A
4241000	McCauley et al.	Dec 1980	A
4384918	Abe	May 1983	A
4412133	Eckes et al.	Oct 1983	A
4480284	Tojo et al.	Oct 1984	A
4481300	Hartnett et al.	Nov 1984	A
4496828	Kusmierz et al.	Jan 1985	A
4502094	Lewin et al.	Feb 1985	A
4520116	Gentilman et al.	May 1985	A
4520421	Sakitani et al.	May 1985	A
4534816	Chen et al.	Aug 1985	A
4535628	Hope	Aug 1985	A
4551192	Di Milia et al.	Nov 1985	A
4554611	Lewin	Nov 1985	A
4700089	Fujii et al.	Oct 1987	A
4720362	Gentilman et al.	Jan 1988	A
4804086	Grohrock	Feb 1989	A
4880982	Hoksaas	Nov 1989	A
4886162	Ambrogio	Dec 1989	A
4931135	Horiuchi et al.	Jun 1990	A
4938815	McNeilly	Jul 1990	A
4949671	Davis et al.	Aug 1990	A
4956538	Moslehi	Sep 1990	A
4963506	Liaw et al.	Oct 1990	A
5117121	Watanabe et al.	May 1992	A
5124272	Saito et al.	Jun 1992	A
5125710	Gianelo	Jun 1992	A
5186120	Ohnishi et al.	Feb 1993	A
D333606	Kanemitsu et al.	Mar 1993	S
5208961	Lajoie	May 1993	A
5219226	James	Jun 1993	A
5231062	Mathers et al.	Jul 1993	A
5242501	McDiarmid	Sep 1993	A
5250092	Nakano	Oct 1993	A
5252133	Miyazaki et al.	Oct 1993	A
5252134	Stauffer	Oct 1993	A
5280894	Witcraft et al.	Jan 1994	A
5295777	Hodos	Mar 1994	A
5298089	Bowe et al.	Mar 1994	A
5308788	Fitch et al.	May 1994	A
5310410	Begin et al.	May 1994	A
5328360	Yokokawa	Jul 1994	A
5362328	Gardiner et al.	Nov 1994	A
5378501	Foster et al.	Jan 1995	A
5456757	Aruga et al.	Oct 1995	A
5478429	Komino et al.	Dec 1995	A
5518780	Tamor et al.	May 1996	A
5540821	Tepman	Jul 1996	A
5565038	Ashley	Oct 1996	A
5584936	Pickering et al.	Dec 1996	A
5584963	Takahashi	Dec 1996	A
5637153	Niino et al.	Jun 1997	A
5645646	Beinglass et al.	Jul 1997	A
5661263	Salvaggio	Aug 1997	A
5683561	Hollars et al.	Nov 1997	A
5690742	Ogata et al.	Nov 1997	A
5732957	Yu	Mar 1998	A
5804505	Yamada et al.	Sep 1998	A
5851293	Lane et al.	Dec 1998	A
D403949	Nakamura	Jan 1999	S
5855687	DuBois et al.	Jan 1999	A
5871586	Crawley et al.	Feb 1999	A
5888304	Umotoy et al.	Mar 1999	A
5897710	Sato et al.	Apr 1999	A
5915200	Tokumasu et al.	Jun 1999	A
5976973	Ohira et al.	Nov 1999	A
6022180	Motoyama et al.	Feb 2000	A
6022802	Jang	Feb 2000	A
6025117	Nakano et al.	Feb 2000	A
6033215	Ohsawa	Mar 2000	A
6090442	Klaus et al.	Jul 2000	A
6093611	Gardner et al.	Jul 2000	A
6099651	Sajoto et al.	Aug 2000	A
6139983	Ohashi et al.	Oct 2000	A
6143129	Savas et al.	Nov 2000	A
6152669	Morita et al.	Nov 2000	A
6159301	Sato et al.	Dec 2000	A
6176929	Fukunaga et al.	Jan 2001	B1
6177688	Linthicum et al.	Jan 2001	B1
6189482	Zhao et al.	Feb 2001	B1
6217662	Kong et al.	Apr 2001	B1
6224679	Sasaki et al.	May 2001	B1
6235121	Honma et al.	May 2001	B1
6239402	Araki et al.	May 2001	B1
6239715	Belton	May 2001	B1
6245647	Akiyama et al.	Jun 2001	B1
6255221	Hudson et al.	Jul 2001	B1
6271320	Keller et al.	Aug 2001	B1
6328864	Ishizawa et al.	Dec 2001	B1
6335293	Luo et al.	Jan 2002	B1
6387823	Sonderman et al.	May 2002	B1
6452017	Uhlenbrock et al.	Sep 2002	B1
6462310	Ratliff et al.	Oct 2002	B1
6464825	Shinozaki	Oct 2002	B1
6474987	Huang et al.	Nov 2002	B1
6475902	Hausmann et al.	Nov 2002	B1
6596398	Russo et al.	Jul 2003	B1
6617253	Chu et al.	Sep 2003	B1
6623799	Lee et al.	Sep 2003	B1
6658933	Allegre et al.	Dec 2003	B2
6659111	Mouri et al.	Dec 2003	B1
6676759	Takagi	Jan 2004	B1
6692903	Chen et al.	Feb 2004	B2
6712949	Gopal	Mar 2004	B2
6716477	Komiyama et al.	Apr 2004	B1
6720262	Koh et al.	Apr 2004	B2
6766545	Hodges	Jul 2004	B2
6776849	Aggarwal et al.	Aug 2004	B2
D497536	Fujiwara	Oct 2004	S
6818566	Leeson et al.	Nov 2004	B2
6821889	Elers et al.	Nov 2004	B2
6825106	Gao et al.	Nov 2004	B1
6843858	Rossman	Jan 2005	B2
6849241	Dauelsberg et al.	Feb 2005	B2
6854580	Braford	Feb 2005	B2
6867086	Chen et al.	Mar 2005	B1
6867153	Tokunaga	Mar 2005	B2
6902647	Hasper	Jun 2005	B2
RE38937	Nakamura	Jan 2006	E
D524600	Austin et al.	Jul 2006	S
D525127	Cogley et al.	Jul 2006	S
7122844	Nakamura et al.	Oct 2006	B2
7144806	Fair et al.	Dec 2006	B1
D535673	Conway et al.	Jan 2007	S
7229502	Wang et al.	Jun 2007	B2
D549815	Murphy	Aug 2007	S
7297641	Todd et al.	Nov 2007	B2
7311977	Yokota et al.	Dec 2007	B2
D562357	Hardy	Feb 2008	S
7354482	Konishi et al.	Apr 2008	B2
7662689	Boyanov et al.	Feb 2010	B2
D614258	Kojima	Apr 2010	S
7727880	Chattopadhyay et al.	Jun 2010	B1
7858898	Bailey et al.	Dec 2010	B2
D633452	Namiki et al.	Mar 2011	S
7910452	Roh et al.	Mar 2011	B2
8128333	Aburatani	Mar 2012	B2
8174400	Park et al.	May 2012	B2
8253204	Lee et al.	Aug 2012	B2
8278224	Mui et al.	Oct 2012	B1
8318584	Li et al.	Nov 2012	B2
8404044	Arai	Mar 2013	B2
8435894	Chandrashekar et al.	May 2013	B2
8443484	Ozaki et al.	May 2013	B2
8507720	Shay	Aug 2013	B2
D693782	Mori et al.	Nov 2013	S
8637384	Ando et al.	Jan 2014	B2
8784676	Guha et al.	Jul 2014	B2
8895395	Kerber et al.	Nov 2014	B1
8937800	Lubomirsky et al.	Jan 2015	B2
8968989	Ouattara et al.	Mar 2015	B2
8969934	Cheng et al.	Mar 2015	B1
8993072	Xiao et al.	Mar 2015	B2
9214340	Kurita et al.	Dec 2015	B2
9281223	Hara	Mar 2016	B2
9337031	Kim et al.	May 2016	B2
D759193	Gutierrez et al.	Jun 2016	S
D761325	Abed	Jul 2016	S
9428833	Duvall et al.	Aug 2016	B1
9449843	Korolik et al.	Sep 2016	B1
9449987	Miyata et al.	Sep 2016	B1
9460954	De Jong et al.	Oct 2016	B2
9472410	Sadjadi et al.	Oct 2016	B2
9605736	Foshage et al.	Mar 2017	B1
D784276	Tiner et al.	Apr 2017	S
9618846	Shamma et al.	Apr 2017	B2
9653267	Carducci et al.	May 2017	B2
D793526	Behdjat	Aug 2017	S
D794753	Miller	Aug 2017	S
9748104	Sasaki et al.	Aug 2017	B2
D797067	Zhang et al.	Sep 2017	S
D798248	Hanson et al.	Sep 2017	S
D800782	Bever et al.	Oct 2017	S
9803926	Kikuchi et al.	Oct 2017	B2
D801942	Riker et al.	Nov 2017	S
D802472	Sasaki et al.	Nov 2017	S
D803802	Sasaki et al.	Nov 2017	S
9812372	Choi et al.	Nov 2017	B2
9824881	Niskanen et al.	Nov 2017	B2
9837355	Briggs et al.	Dec 2017	B2
9842835	Cheng et al.	Dec 2017	B1
9847247	Huang et al.	Dec 2017	B2
9850573	Sun	Dec 2017	B1
D807494	Kim et al.	Jan 2018	S
9911595	Smith et al.	Mar 2018	B1
9929055	Dube et al.	Mar 2018	B2
9970112	Koshi et al.	May 2018	B2
D825505	Hanson et al.	Aug 2018	S
D825614	Bever et al.	Aug 2018	S
D829306	Ikedo et al.	Sep 2018	S
D834686	Yamada et al.	Nov 2018	S
10229851	Briggs et al.	Mar 2019	B2
10229985	Li et al.	Mar 2019	B1
D846008	Geldenhuys et al.	Apr 2019	S
D849055	Kneip	May 2019	S
10332747	Watanabe et al.	Jun 2019	B1
10361366	Hakamata et al.	Jul 2019	B2
10395963	Cooke	Aug 2019	B2
10424476	Suzuki et al.	Sep 2019	B2
10424477	Niskanen et al.	Sep 2019	B2
D864134	Watarai et al.	Oct 2019	S
10510529	Suzuki et al.	Dec 2019	B2
10590535	Huggare	Mar 2020	B2
D881338	Chen	Apr 2020	S
10622236	Kuo et al.	Apr 2020	B2
10662525	Jang et al.	May 2020	B2
10704143	Hisamitsu et al.	Jul 2020	B1
10731249	Hatanpää et al.	Aug 2020	B2
10734497	Zhu et al.	Aug 2020	B2
10741386	Chen et al.	Aug 2020	B2
10770336	Hill et al.	Sep 2020	B2
D913980	Lee et al.	Mar 2021	S
D914620	Rokkam et al.	Mar 2021	S
10950477	Lin et al.	Mar 2021	B2
11018003	Huang et al.	May 2021	B2
D922229	Jun et al.	Jun 2021	S
11053584	Hsieh et al.	Jul 2021	B2
20010003271	Otsuki	Jun 2001	A1
20010007244	Matsuse	Jul 2001	A1
20010019347	Hauck	Sep 2001	A1
20010022215	Donohoe	Sep 2001	A1
20010024387	Raaijmakers et al.	Sep 2001	A1
20010027585	Lee	Oct 2001	A1
20010042514	Mizuno et al.	Nov 2001	A1
20010052556	Ting et al.	Dec 2001	A1
20010054381	Umotoy et al.	Dec 2001	A1
20020015853	Wataya et al.	Feb 2002	A1
20020022347	Park et al.	Feb 2002	A1
20020033183	Sun et al.	Mar 2002	A1
20020036065	Yamagishi et al.	Mar 2002	A1
20020047705	Tada et al.	Apr 2002	A1
20020052119	Cleemput	May 2002	A1
20020061716	Korovin et al.	May 2002	A1
20020073923	Saito et al.	Jun 2002	A1
20020079056	Kudo et al.	Jun 2002	A1
20020106909	Kato et al.	Aug 2002	A1
20020108570	Lindfors	Aug 2002	A1
20020117262	Pang et al.	Aug 2002	A1
20020127956	Ashjaee et al.	Sep 2002	A1
20020129768	Carpenter et al.	Sep 2002	A1
20030008602	Ashjaee et al.	Jan 2003	A1
20030013314	Ying et al.	Jan 2003	A1
20030029563	Kaushal et al.	Feb 2003	A1
20030049571	Hallock et al.	Mar 2003	A1
20030049580	Goodman	Mar 2003	A1
20030056726	Holst et al.	Mar 2003	A1
20030075107	Miyano et al.	Apr 2003	A1
20030111012	Takeshima	Jun 2003	A1
20030113995	Xia et al.	Jun 2003	A1
20030132319	Hytros et al.	Jul 2003	A1
20030143846	Sekiya et al.	Jul 2003	A1
20030150386	Shimada	Aug 2003	A1
20030157345	Beldi et al.	Aug 2003	A1
20030168174	Foree	Sep 2003	A1
20030181065	O'Donnell	Sep 2003	A1
20030188682	Tois et al.	Oct 2003	A1
20030200926	Dando et al.	Oct 2003	A1
20030205237	Sakuma	Nov 2003	A1
20030221780	Lei et al.	Dec 2003	A1
20030232497	Xi et al.	Dec 2003	A1
20040005753	Kostamo et al.	Jan 2004	A1
20040018694	Lee et al.	Jan 2004	A1
20040058517	Nallan et al.	Mar 2004	A1
20040079286	Lindfors	Apr 2004	A1
20040083962	Bang et al.	May 2004	A1
20040099635	Nishikawa	May 2004	A1
20040104439	Haukka et al.	Jun 2004	A1
20040112288	Whitesell	Jun 2004	A1
20040118342	Cheng et al.	Jun 2004	A1
20040126929	Tang et al.	Jul 2004	A1
20040137756	Li et al.	Jul 2004	A1
20040154746	Park	Aug 2004	A1
20040163590	Tran et al.	Aug 2004	A1
20040224478	Chudzik et al.	Nov 2004	A1
20040226507	Carpenter et al.	Nov 2004	A1
20040231799	Lee et al.	Nov 2004	A1
20040241341	Lin	Dec 2004	A1
20040253790	Ootsuka	Dec 2004	A1
20040261706	Lindfors et al.	Dec 2004	A1
20050006682	Bae et al.	Jan 2005	A1
20050016452	Ryu et al.	Jan 2005	A1
20050023231	Huang et al.	Feb 2005	A1
20050051854	Cabral et al.	Mar 2005	A1
20050062773	Fouet	Mar 2005	A1
20050081786	Kubista et al.	Apr 2005	A1
20050085090	Mui et al.	Apr 2005	A1
20050090123	Nishimura et al.	Apr 2005	A1
20050092439	Keeton et al.	May 2005	A1
20050104112	Haukka et al.	May 2005	A1
20050112282	Gordon et al.	May 2005	A1
20050133166	Satitpunwaycha et al.	Jun 2005	A1
20050136657	Yokoi et al.	Jun 2005	A1
20050153573	Okudaira et al.	Jul 2005	A1
20050164469	Haupt	Jul 2005	A1
20050170306	Oosterlaken et al.	Aug 2005	A1
20050193952	Goodman et al.	Sep 2005	A1
20050276928	Okumura et al.	Dec 2005	A1
20050285208	Ren et al.	Dec 2005	A1
20060008997	Jang et al.	Jan 2006	A1
20060019495	Marcadal et al.	Jan 2006	A1
20060057858	Chung et al.	Mar 2006	A1
20060097220	Kim et al.	May 2006	A1
20060097305	Lee	May 2006	A1
20060110930	Senzaki	May 2006	A1
20060115589	Vukovic	Jun 2006	A1
20060118241	Ohmi et al.	Jun 2006	A1
20060130751	Volfovski et al.	Jun 2006	A1
20060133955	Peters	Jun 2006	A1
20060141758	Naumann et al.	Jun 2006	A1
20060148151	Murthy et al.	Jul 2006	A1
20060156979	Thakur et al.	Jul 2006	A1
20060162661	Jung et al.	Jul 2006	A1
20060176928	Nakamura et al.	Aug 2006	A1
20060193980	Hasegawa	Aug 2006	A1
20060211224	Matsuda	Sep 2006	A1
20060213441	Kobrin et al.	Sep 2006	A1
20060223337	Ahn et al.	Oct 2006	A1
20060249175	Nowak et al.	Nov 2006	A1
20060252244	Vaartstra et al.	Nov 2006	A1
20070026654	Huotari et al.	Feb 2007	A1
20070065597	Kaido et al.	Mar 2007	A1
20070087515	Yieh et al.	Apr 2007	A1
20070092696	Tsukatani et al.	Apr 2007	A1
20070111030	Nakano et al.	May 2007	A1
20070123060	Rahtu	May 2007	A1
20070128570	Goto et al.	Jun 2007	A1
20070134821	Thakur et al.	Jun 2007	A1
20070144442	Migita	Jun 2007	A1
20070163490	Habel et al.	Jul 2007	A1
20070166459	Chang et al.	Jul 2007	A1
20070205788	Natsuhara et al.	Sep 2007	A1
20070215278	Furuse et al.	Sep 2007	A1
20070222131	Fukumoto et al.	Sep 2007	A1
20070248832	Maeda et al.	Oct 2007	A1
20070264427	Shinriki et al.	Nov 2007	A1
20070264793	Oh et al.	Nov 2007	A1
20070281106	Lubomirsky et al.	Dec 2007	A1
20080032514	Sano et al.	Feb 2008	A1
20080035607	O'Hara et al.	Feb 2008	A1
20080044932	Samoilov et al.	Feb 2008	A1
20080069951	Chacin et al.	Mar 2008	A1
20080092821	Otsuka et al.	Apr 2008	A1
20080110401	Fujikawa et al.	May 2008	A1
20080110568	Son et al.	May 2008	A1
20080135516	Yokogawa et al.	Jun 2008	A1
20080135936	Nakajima	Jun 2008	A1
20080142046	Johnson et al.	Jun 2008	A1
20080157212	Lavoie et al.	Jul 2008	A1
20080194088	Srinivasan et al.	Aug 2008	A1
20080194113	Kim et al.	Aug 2008	A1
20080194169	Sterling et al.	Aug 2008	A1
20080210162	Yonebayashi	Sep 2008	A1
20080223725	Han et al.	Sep 2008	A1
20080229811	Zhao et al.	Sep 2008	A1
20080230352	Hirata	Sep 2008	A1
20080237604	Alshareef et al.	Oct 2008	A1
20080246101	Li et al.	Oct 2008	A1
20080276864	Koelmel et al.	Nov 2008	A1
20080293198	Kojima et al.	Nov 2008	A1
20090031954	Nishikido et al.	Feb 2009	A1
20090035463	Dip	Feb 2009	A1
20090035946	Pierreux et al.	Feb 2009	A1
20090039475	Shioya	Feb 2009	A1
20090060480	Herchen	Mar 2009	A1
20090080136	Nagayama et al.	Mar 2009	A1
20090093100	Xia et al.	Apr 2009	A1
20090117723	Kim et al.	May 2009	A1
20090176018	Zou et al.	Jul 2009	A1
20090236315	Willwerth et al.	Sep 2009	A1
20090291208	Gordon et al.	Nov 2009	A1
20090291566	Ueno et al.	Nov 2009	A1
20090297696	Pore et al.	Dec 2009	A1
20090297731	Goundar	Dec 2009	A1
20090314208	Zhou et al.	Dec 2009	A1
20090314309	Sankarakrishnan et al.	Dec 2009	A1
20100008656	Sorabji et al.	Jan 2010	A1
20100012153	Shigemoto et al.	Jan 2010	A1
20100031884	Aggarwal et al.	Feb 2010	A1
20100038687	Klaus et al.	Feb 2010	A1
20100075488	Collins et al.	Mar 2010	A1
20100116208	Sangam	May 2010	A1
20100119844	Sun et al.	May 2010	A1
20100121100	Shay	May 2010	A1
20100129670	Sun et al.	May 2010	A1
20100133255	Bahng et al.	Jun 2010	A1
20100147396	Yamagishi et al.	Jun 2010	A1
20100163187	Yokogawa et al.	Jul 2010	A1
20100178423	Shimizu et al.	Jul 2010	A1
20100195690	Moench et al.	Aug 2010	A1
20100258809	Muller	Oct 2010	A1
20100322822	Fritchie et al.	Dec 2010	A1
20110089419	Yamazaki et al.	Apr 2011	A1
20110091650	Noguchi et al.	Apr 2011	A1
20110100489	Orito et al.	May 2011	A1
20110117728	Su et al.	May 2011	A1
20110127702	Gautam et al.	Jun 2011	A1
20110171380	Higashi et al.	Jul 2011	A1
20110185969	Yang	Aug 2011	A1
20110186984	Saito et al.	Aug 2011	A1
20110195574	Blasco et al.	Aug 2011	A1
20110212625	Toyoda et al.	Sep 2011	A1
20110237082	Nakajima et al.	Sep 2011	A1
20110256692	Tam et al.	Oct 2011	A1
20110266611	Kim et al.	Nov 2011	A1
20110286819	Shibata et al.	Nov 2011	A1
20110297088	Song et al.	Dec 2011	A1
20110305856	Bonn	Dec 2011	A1
20110318142	Gage et al.	Dec 2011	A1
20120003599	Patalay et al.	Jan 2012	A1
20120027547	Jager et al.	Feb 2012	A1
20120055401	Tozawa	Mar 2012	A1
20120077350	Miya et al.	Mar 2012	A1
20120088369	Weidman et al.	Apr 2012	A1
20120094010	Sugiura et al.	Apr 2012	A1
20120108039	Zojaji et al.	May 2012	A1
20120111271	Begamey et al.	May 2012	A1
20120177845	Odedra et al.	Jul 2012	A1
20120187375	Guo et al.	Jul 2012	A1
20120196242	Volfovski et al.	Aug 2012	A1
20120219735	Bakker et al.	Aug 2012	A1
20120222813	Pal et al.	Sep 2012	A1
20120225192	Yudovsky et al.	Sep 2012	A1
20120231611	Gatineau et al.	Sep 2012	A1
20120263875	Brenninger et al.	Oct 2012	A1
20120269962	Blomberg et al.	Oct 2012	A1
20120270384	Sanchez et al.	Oct 2012	A1
20120270407	Werner et al.	Oct 2012	A1
20120276306	Ueda	Nov 2012	A1
20120319279	Isobayashi	Dec 2012	A1
20120320491	Doh et al.	Dec 2012	A1
20120329208	Pore et al.	Dec 2012	A1
20130011630	Sullivan et al.	Jan 2013	A1
20130012003	Haukka et al.	Jan 2013	A1
20130012034	Ahn et al.	Jan 2013	A1
20130017503	De Ridder et al.	Jan 2013	A1
20130023124	Nemani et al.	Jan 2013	A1
20130037532	Volfovski et al.	Feb 2013	A1
20130059415	Kato et al.	Mar 2013	A1
20130062839	Tschinderle et al.	Mar 2013	A1
20130068391	Mazzocco et al.	Mar 2013	A1
20130075788	Tomabechi	Mar 2013	A1
20130085618	Ding	Apr 2013	A1
20130089988	Wang et al.	Apr 2013	A1
20130109172	Collins et al.	May 2013	A1
20130109192	Hawkins et al.	May 2013	A1
20130143415	Yudovsky et al.	Jun 2013	A1
20130147050	Bonner, III et al.	Jun 2013	A1
20130149874	Hirose et al.	Jun 2013	A1
20130162142	Nishino et al.	Jun 2013	A1
20130203258	Chen et al.	Aug 2013	A1
20130206066	Han et al.	Aug 2013	A1
20130213300	Sung et al.	Aug 2013	A1
20130216710	Masuda et al.	Aug 2013	A1
20130220550	Koo et al.	Aug 2013	A1
20130230987	Draeger et al.	Sep 2013	A1
20130247937	Nunomura et al.	Sep 2013	A1
20130270600	Helander et al.	Oct 2013	A1
20130273330	Wang et al.	Oct 2013	A1
20140024223	Kilpi et al.	Jan 2014	A1
20140057187	Suzuki et al.	Feb 2014	A1
20140073082	Song	Mar 2014	A1
20140080314	Sasajima et al.	Mar 2014	A1
20140120312	He et al.	May 2014	A1
20140127422	Shao et al.	May 2014	A1
20140144375	Kim et al.	May 2014	A1
20140148924	Brak et al.	May 2014	A1
20140158154	Kondo et al.	Jun 2014	A1
20140170320	Yamamoto et al.	Jun 2014	A1
20140179092	Kim	Jun 2014	A1
20140187022	Falster et al.	Jul 2014	A1
20140190581	Nagase et al.	Jul 2014	A1
20140242808	Akiyama et al.	Aug 2014	A1
20140252710	Cuvalci et al.	Sep 2014	A1
20140256160	Wada et al.	Sep 2014	A1
20140271081	Lavitsky et al.	Sep 2014	A1
20140287164	Xiao et al.	Sep 2014	A1
20140290573	Okabe et al.	Oct 2014	A1
20140327117	Bencher et al.	Nov 2014	A1
20140346600	Cheng et al.	Nov 2014	A1
20140360430	Armour et al.	Dec 2014	A1
20150004806	Ndiege et al.	Jan 2015	A1
20150024567	Tsai et al.	Jan 2015	A1
20150030782	Ivanov et al.	Jan 2015	A1
20150061078	Abel et al.	Mar 2015	A1
20150069354	Helander et al.	Mar 2015	A1
20150087139	O'Neill et al.	Mar 2015	A1
20150099123	Barbee et al.	Apr 2015	A1
20150099375	Haripin et al.	Apr 2015	A1
20150104575	Takoudis et al.	Apr 2015	A1
20150110968	Lavoie et al.	Apr 2015	A1
20150126036	Zhao	May 2015	A1
20150132953	Nowling et al.	May 2015	A1
20150137315	Chen et al.	May 2015	A1
20150155140	Lee et al.	Jun 2015	A1
20150155370	Tsai et al.	Jun 2015	A1
20150170907	Haukka et al.	Jun 2015	A1
20150176124	Greer et al.	Jun 2015	A1
20150211124	Nozawa et al.	Jul 2015	A1
20150228513	Parkhe et al.	Aug 2015	A1
20150247259	Hekmatshoar-Tabari et al.	Sep 2015	A1
20150267299	Hawkins et al.	Sep 2015	A1
20150275355	Mallikarjunan et al.	Oct 2015	A1
20150307989	Lindfors	Oct 2015	A1
20150311043	Sun et al.	Oct 2015	A1
20150340266	Ngo et al.	Nov 2015	A1
20150345022	Yudovsky et al.	Dec 2015	A1
20150349073	Kang	Dec 2015	A1
20150368798	Kwong	Dec 2015	A1
20160005596	Behera et al.	Jan 2016	A1
20160010208	Huang et al.	Jan 2016	A1
20160032453	Qian et al.	Feb 2016	A1
20160035542	Hausmann	Feb 2016	A1
20160086811	Mackedanz et al.	Mar 2016	A1
20160111304	Takahashi et al.	Apr 2016	A1
20160133504	Chu et al.	May 2016	A1
20160152649	Gordon	Jun 2016	A1
20160153088	Tsuji et al.	Jun 2016	A1
20160168704	Choi et al.	Jun 2016	A1
20160169766	Ishibashi et al.	Jun 2016	A1
20160196969	Berry et al.	Jul 2016	A1
20160204005	Oki et al.	Jul 2016	A1
20160204436	Barker et al.	Jul 2016	A1
20160211166	Yan et al.	Jul 2016	A1
20160215387	Liu et al.	Jul 2016	A1
20160225588	Shaikh et al.	Aug 2016	A1
20160237559	Tsuji	Aug 2016	A1
20160273095	Lin et al.	Sep 2016	A1
20160273128	Kang	Sep 2016	A1
20160279629	Michishita et al.	Sep 2016	A1
20160284517	Saido	Sep 2016	A1
20160293609	Jha et al.	Oct 2016	A1
20160307740	Kim et al.	Oct 2016	A1
20160314960	Cheng et al.	Oct 2016	A1
20160343612	Wang et al.	Nov 2016	A1
20160343660	Kim	Nov 2016	A1
20160376701	Takewaki et al.	Dec 2016	A1
20170022612	Lei et al.	Jan 2017	A1
20170040146	Huang et al.	Feb 2017	A1
20170040198	Lin et al.	Feb 2017	A1
20170062224	Fu et al.	Mar 2017	A1
20170102612	Meyers et al.	Apr 2017	A1
20170114460	Kim et al.	Apr 2017	A1
20170140924	Suzuki et al.	May 2017	A1
20170154895	Huo	Jun 2017	A1
20170167023	Praia et al.	Jun 2017	A1
20170178939	Omori	Jun 2017	A1
20170178942	Sakata et al.	Jun 2017	A1
20170191159	Polyak et al.	Jul 2017	A1
20170191685	Ronne et al.	Jul 2017	A1
20170213960	de Araujo et al.	Jul 2017	A1
20170218515	Shin et al.	Aug 2017	A1
20170222008	Hsu et al.	Aug 2017	A1
20170253968	Yahata	Sep 2017	A1
20170256393	Kim et al.	Sep 2017	A1
20170263438	Li et al.	Sep 2017	A1
20170271143	Fukiage et al.	Sep 2017	A1
20170283312	Lee et al.	Oct 2017	A1
20170283313	Lee et al.	Oct 2017	A1
20170303382	Smith et al.	Oct 2017	A1
20170306494	Lin et al.	Oct 2017	A1
20170314125	Fenwick et al.	Nov 2017	A1
20170369993	Sun	Dec 2017	A1
20170372919	Manna et al.	Dec 2017	A1
20180047621	Armini	Feb 2018	A1
20180094350	Verghese et al.	Apr 2018	A1
20180096821	Lubomirsky	Apr 2018	A1
20180096844	Dutartre et al.	Apr 2018	A1
20180105701	Larsson et al.	Apr 2018	A1
20180144973	Ye	May 2018	A1
20180171472	Yamada et al.	Jun 2018	A1
20180209042	Wu et al.	Jul 2018	A1
20180265294	Hayashi	Sep 2018	A1
20180265972	Firouzdor et al.	Sep 2018	A1
20180265973	Firouzdor et al.	Sep 2018	A1
20180274098	Takagi et al.	Sep 2018	A1
20180277338	Fukada et al.	Sep 2018	A1
20180315597	Varadarajan et al.	Nov 2018	A1
20180327892	Wu et al.	Nov 2018	A1
20180327898	Wu et al.	Nov 2018	A1
20180327899	Wu et al.	Nov 2018	A1
20190019714	Kosakai et al.	Jan 2019	A1
20190035698	Tanaka	Jan 2019	A1
20190078206	Wu et al.	Mar 2019	A1
20190109043	Wang et al.	Apr 2019	A1
20190115451	Lee et al.	Apr 2019	A1
20190148177	Yin et al.	May 2019	A1
20190148556	Wang et al.	May 2019	A1
20190172701	Jia et al.	Jun 2019	A1
20190172714	Bobek et al.	Jun 2019	A1
20190176435	Bellman et al.	Jun 2019	A1
20190198297	Aramaki et al.	Jun 2019	A1
20190198359	Kamimura et al.	Jun 2019	A1
20190198571	Xu et al.	Jun 2019	A1
20190204029	Tanabe	Jul 2019	A1
20190211450	Adachi et al.	Jul 2019	A1
20190233446	MacDonald et al.	Aug 2019	A1
20190237325	Wang et al.	Aug 2019	A1
20190318910	Mori	Oct 2019	A1
20190319100	Chen et al.	Oct 2019	A1
20190362970	Wang et al.	Nov 2019	A1
20190362989	Reuter et al.	Nov 2019	A1
20190363015	Cheng et al.	Nov 2019	A1
20190378711	Suzuki et al.	Dec 2019	A1
20190385907	Gottheim et al.	Dec 2019	A1
20190393304	Guillorn et al.	Dec 2019	A1
20200012081	Komai	Jan 2020	A1
20200035489	Huang et al.	Jan 2020	A1
20200052089	Yu et al.	Feb 2020	A1
20200058469	Ranjan et al.	Feb 2020	A1
20200066512	Tois et al.	Feb 2020	A1
20200105895	Tang et al.	Apr 2020	A1
20200119038	Hopkins et al.	Apr 2020	A1
20200135915	Savant et al.	Apr 2020	A1
20200152473	Tapily et al.	May 2020	A1
20200152750	Morrow et al.	May 2020	A1
20200185249	Rice et al.	Jun 2020	A1
20200185257	Nishiwaki	Jun 2020	A1
20200203157	Su	Jun 2020	A1
20200273728	Benjaminson et al.	Aug 2020	A1
20200283894	Lehn et al.	Sep 2020	A1
20200312681	Tanaka et al.	Oct 2020	A1
20200385861	Deye et al.	Dec 2020	A1
20200385867	Kim et al.	Dec 2020	A1
20200385868	Kim et al.	Dec 2020	A1
20200395199	Miyama	Dec 2020	A1
20200395209	Yoshimoto et al.	Dec 2020	A1
20200395444	Lo et al.	Dec 2020	A1
20200402846	Collins et al.	Dec 2020	A1
20210002762	Jun et al.	Jan 2021	A1
20210005449	Blanquart et al.	Jan 2021	A1
20210005450	Mattinen et al.	Jan 2021	A1
20210005723	Tang et al.	Jan 2021	A1
20210013010	Yoshikawa et al.	Jan 2021	A1
20210013034	Wu et al.	Jan 2021	A1
20210013037	Sun et al.	Jan 2021	A1
20210013042	Vayrynen et al.	Jan 2021	A1
20210013085	Roh et al.	Jan 2021	A1
20210020429	Khazaka et al.	Jan 2021	A1
20210020431	Blanquart et al.	Jan 2021	A1
20210020432	Blanquart	Jan 2021	A1
20210020467	Sekiguchi	Jan 2021	A1
20210020470	Lee	Jan 2021	A1
20210028021	Mousa et al.	Jan 2021	A1
20210017648	Kubota et al.	Feb 2021	A1
20210032754	White et al.	Feb 2021	A1
20210033977	Raaijmakers et al.	Feb 2021	A1
20210035785	Jeong et al.	Feb 2021	A1
20210035786	Jeong et al.	Feb 2021	A1
20210035802	Tolle et al.	Feb 2021	A1
20210035824	de Ridder	Feb 2021	A1
20210035839	de Ridder	Feb 2021	A1
20210035840	de Ridder et al.	Feb 2021	A1
20210035841	Fluit	Feb 2021	A1
20210035842	de Ridder	Feb 2021	A1
20210035854	Yoo et al.	Feb 2021	A1
20210040613	White et al.	Feb 2021	A1
20210040615	White et al.	Feb 2021	A1
20210043444	Blanquart	Feb 2021	A1
20210050231	Oosterlaken	Feb 2021	A1
20210054500	Zope et al.	Feb 2021	A1
20210054504	Wang et al.	Feb 2021	A1
20210057214	Kengoyama et al.	Feb 2021	A1
20210057223	Stevens et al.	Feb 2021	A1
20210057275	Pierreux et al.	Feb 2021	A1
20210057570	Lin et al.	Feb 2021	A1
20210066075	Zhang et al.	Mar 2021	A1
20210066079	Lima et al.	Mar 2021	A1
20210066080	Mattinen et al.	Mar 2021	A1
20210066083	Haukka	Mar 2021	A1
20210066084	Raisanen et al.	Mar 2021	A1
20210070783	Odedra et al.	Mar 2021	A1
20210071296	Watarai et al.	Mar 2021	A1
20210071298	Maes et al.	Mar 2021	A1
20210074527	Lee et al.	Mar 2021	A1
20210082692	Kikuchi	Mar 2021	A1
20210090878	Kang et al.	Mar 2021	A1
20210095372	Minjauw et al.	Apr 2021	A1
20210102289	Tsuji et al.	Apr 2021	A1
20210102290	Acosta et al.	Apr 2021	A1
20210102292	Lin et al.	Apr 2021	A1
20210104384	Parkhe	Apr 2021	A1
20210104399	Kuroda et al.	Apr 2021	A1
20210108328	Yanagisawa	Apr 2021	A1
20210111025	Zyulkov et al.	Apr 2021	A1
20210111053	De Ridder	Apr 2021	A1
20210118667	Fukazawa et al.	Apr 2021	A1
20210118679	Lima et al.	Apr 2021	A1
20210118687	Wang et al.	Apr 2021	A1
20210125827	Khazaka et al.	Apr 2021	A1
20210125832	Bhatnagar	Apr 2021	A1
20210134588	Kohen et al.	May 2021	A1
20210134959	Lima et al.	May 2021	A1
20210140043	Thombare et al.	May 2021	A1
20210143003	Fukuda et al.	May 2021	A1
20210151315	Pierreux et al.	May 2021	A1
20210151348	Utsuno et al.	May 2021	A1
20210151352	Zope et al.	May 2021	A1
20210156024	Roh et al.	May 2021	A1
20210156030	Shugrue	May 2021	A1
20210159077	Longrie et al.	May 2021	A1
20210166910	Kim et al.	Jun 2021	A1
20210166924	Moon et al.	Jun 2021	A1
20210166925	Moon et al.	Jun 2021	A1
20210166940	Nozawa	Jun 2021	A1
20210172064	Moon	Jun 2021	A1
20210175052	Takahashi et al.	Jun 2021	A1
20210180184	Verni et al.	Jun 2021	A1
20210180188	Kim et al.	Jun 2021	A1
20210180189	Shugrue et al.	Jun 2021	A1
20210193458	Salmi et al.	Jun 2021	A1
20210205758	Kimtee et al.	Jul 2021	A1
20210207269	Huang et al.	Jul 2021	A1
20210207270	de Ridder et al.	Jul 2021	A1
20210210373	Singu et al.	Jul 2021	A1
20210214842	Yoon et al.	Jul 2021	A1
20210225615	Yoshida	Jul 2021	A1
20210225622	Shoji	Jul 2021	A1
20210225642	Utsuno et al.	Jul 2021	A1
20210225643	Kuroda et al.	Jul 2021	A1
20210230744	Kimtee et al.	Jul 2021	A1
20210230746	Shiba	Jul 2021	A1
20210233772	Zhu et al.	Jul 2021	A1
20210238736	Butail et al.	Aug 2021	A1
20210238742	Susa et al.	Aug 2021	A1
20210239614	Muralidhar et al.	Aug 2021	A1
20210242011	Shero et al.	Aug 2021	A1
20210246556	Mori	Aug 2021	A1
20210247693	Maes et al.	Aug 2021	A1
20210249303	Blanquart	Aug 2021	A1
20210254216	Mori et al.	Aug 2021	A1
20210254238	Khazaka et al.	Aug 2021	A1
20210257213	Kikuchi et al.	Aug 2021	A1
20210257509	Nishiwaki	Aug 2021	A1
20210265134	Singh et al.	Aug 2021	A1
20210265158	Kaneko	Aug 2021	A1
20210268554	Mori	Sep 2021	A1
20210269914	Väyrynen et al.	Sep 2021	A1
20210272821	Oosterlaken	Sep 2021	A1
20210273109	Yamazaki et al.	Sep 2021	A1
20210280448	Ganguli et al.	Sep 2021	A1
20210285102	Yoon et al.	Sep 2021	A1
20210287878	Um et al.	Sep 2021	A1
20210287912	Shiba et al.	Sep 2021	A1
20210287928	Kim et al.	Sep 2021	A1
20210288476	Wei	Sep 2021	A1
20210292902	Kajbafvala et al.	Sep 2021	A1
20210296130	Longrie et al.	Sep 2021	A1
20210296144	Lin et al.	Sep 2021	A1
20210310125	Ma et al.	Oct 2021	A1
20210313150	Kang et al.	Oct 2021	A1
20210313167	Pore et al.	Oct 2021	A1
20210313170	Suzuki	Oct 2021	A1
20210313178	Nakano	Oct 2021	A1
20210313182	Zhu et al.	Oct 2021	A1
20210317576	Väyrynen et al.	Oct 2021	A1
20210319982	Kim et al.	Oct 2021	A1
20210320003	Sugiura et al.	Oct 2021	A1
20210320010	Wang et al.	Oct 2021	A1
20210320020	Oosterlaken et al.	Oct 2021	A1
20210324510	Kuwano et al.	Oct 2021	A1
20210324518	de Ridder	Oct 2021	A1
20210327704	Kajbafvala et al.	Oct 2021	A1
20210327714	Lee et al.	Oct 2021	A1
20210327715	Xie et al.	Oct 2021	A1
20210328036	Li et al.	Oct 2021	A1
20210041284	Yednak	Nov 2021	A1

Foreign Referenced Citations (68)

Number	Date	Country
101047143	Oct 2007	CN
101308794	Sep 2010	CN
102094183	Jun 2011	CN
102539019	Sep 2013	CN
203721699	Jul 2014	CN
104307264	Jan 2015	CN
104498895	Apr 2015	CN
104517892	Apr 2015	CN
204629865	Sep 2015	CN
205448240	Aug 2016	CN
104342637	Feb 2017	CN
206145834	May 2017	CN
104233226	Jun 2017	CN
106895521	Jun 2017	CN
104630735	Dec 2017	CN
107675144	Feb 2018	CN
106011785	Oct 2018	CN
108910843	Nov 2018	CN
109000352	Dec 2018	CN
0634785	Jan 1995	EP
678909	Jul 1999	EP
1061567	Dec 2000	EP
2708624	Feb 1995	FR
400010	Oct 1933	GB
2051875	Jan 1981	GB
S5979545	May 1984	JP
S59127847	Jul 1984	JP
S60110133	Jun 1985	JP
H0165766	Jun 1989	JP
H01185176	Jul 1989	JP
H01313954	Dec 1989	JP
H03211753	Sep 1991	JP
H0616433	Jun 1994	JP
2002118066	Apr 2002	JP
2004088077	Mar 2004	JP
2004244298	Sep 2004	JP
2005033221	Sep 2004	JP
2006124831	May 2006	JP
2013196822	Sep 2013	JP
2015021175	Feb 2015	JP
2017220011	Dec 2017	JP
20000000946	Jan 2000	KR
100273261	Dec 2000	KR
20070041701	Apr 2007	KR
10-2007-0117817	Dec 2007	KR
10-2009-0105977	Oct 2009	KR
10-2010-0015073	Feb 2010	KR
10-2010-0122701	Nov 2010	KR
10-2011-0058534	Jun 2011	KR
10-2013-0129149	Nov 2013	KR
101758892	Jul 2017	KR
201213596	Apr 2012	TW
201234453	Aug 2012	TW
M446412	Feb 2013	TW
M512254	Nov 2015	TW
1514509	Dec 2015	TW
201613231	Apr 2016	TW
M553518	Dec 2017	TW
2004007800	Jan 2004	WO
2007088940	Aug 2007	WO
2013177269	Nov 2013	WO
2015127614	Sep 2015	WO
2016019795	Feb 2016	WO
2017125401	Jul 2017	WO
2019142055	Jul 2019	WO
2019214578	Nov 2019	WO
2020118100	Jun 2020	WO
2021072042	Apr 2021	WO

Non-Patent Literature Citations (510)

Entry
CNIPA; Notice of Allowance dated Dec. 21, 2020 in Application No. 201610982040.X.
CNIPA; Office Action dated Nov. 20, 2020 in Application No. 201710762817.6.
CNIPA; Notice of Allowance dated Dec. 28, 2020 in Application No. 201930704935.1.
CNIPA; Notice of Allowance dated Dec. 10, 2020 in Application No. 202030352604.9.
CNIPA; Office Action dated Jan. 25, 2021 in Application No. 202030579755.8.
JPO; Notice of Allowance dated Nov. 27, 2020 in Application No. 2016-206625.
JPO; Office Action dated Jan. 26, 2021 in Application No. 2017-139817.
JPO; Notice of Allowance dated Nov. 26, 2020 in Application No. 2020-502653.
KIPO; Office Action dated Jan. 25, 2021 in Application No. 10-2014-0011765.
KIPO; Notice of Allowance dated Jan. 4, 2021 in Application No. 10-2014-0060120.
KIPO; Notice of Allowance dated Jan. 4, 2021 in Application No. 10-2014-0071653.
KIPO; Office Action dated Nov. 29, 2020 in Application No. 10-2014-0105478.
KIPO; Office Action dated Feb. 17, 2021 in Application No. 10-2014-0122903.
KIPO; Office Action dated Jan. 25, 2021 in Application No. 10-2014-0145220.
KIPO; Office Action dated Jan. 6, 2021 in Application No. 10-2015-0025314.
KIPO; Office Action dated Dec. 23, 2020 in Application No. 10-2019-0044213.
KIPO; Office Action dated Nov. 14, 2020 in Application No. 10-2020-0101096.
KIPO; Notice of Allowance dated Oct. 20, 2020 in Application No. 30-2019-0054642.
KIPO; Notice of Allowance dated Oct. 22, 2020 in Application No. 30-2019-0058566 (M001).
KIPO; Notice of Allowance dated Oct. 22, 2020 in Application No. 30-2019-0058566 (M002).
KIPO; Notice of Allowance dated Dec. 1, 2020 in Application No. 30-2019-0061607.
KIPO; Office Action dated Jan. 26, 2021 in Application No. 30-2020-0005953 (M001).
KIPO; Office Action dated Jan. 26, 2021 in Application No. 30-2020-0005953 (M002).
KIPO; Notice of Allowance dated Dec. 23, 2020 in Application No. 30-2020-0006059.
KIPO; Notice of Allownace dated Dec. 25, 2020 in Application No. 30-2020-0006223.
KIPO; Notice of Allowance dated Feb. 1, 2021 in Application No. 30-2020-0006385.
KIPO; Notice of Allowance dated Feb. 1, 2021 in Application No. 30-2020-0006391.
TIPO; Office Action dated Dec. 2, 2020 in Application No. 105131896.
TIPO; Notice of Allowance dated Jan. 29, 2021 in Application No. 105142668.
TIPO; Notice of Allowance dated Dec. 10, 2020 in Application No. 106108152.
TIPO; Notice of Allowance dated Jan. 25, 2021 in Application No. 106111548.
TIPO; Office Action dated Sep. 30, 2020 in Application No. 106113604.
TIPO; Office Action dated Jan. 6, 2021 in Application No. 106115126.
TIPO; Office Action dated Dec. 21, 2020 in Application No. 106122231.
TIPO; Office Action dated Dec. 29, 2020 in Application No. 106124126.
TIPO; Office Action dated Dec. 9, 2020 in Application No. 106124128.
TIPO; Office Action dated Jan. 25, 2021 in Application No. 106124129.
TIPO; Office Action dated Dec. 9, 2020 in Application No. 106124130.
TIPO; Office Action dated Jan. 20, 2021 in Application No. 106129491.
TIPO; Office Action dated Feb. 8, 2021 in Application No. 106133152.
TIPO; Office Action dated Dec. 24, 2019 in Application No. 108105002.
TIPO; Notice of Allowance dated Nov. 24, 2020 in Application No. 108307599.
TIPO; Notice of Allowance dated Jan. 11, 2021 in Application No. 108307599D01.
TIPO; Notice of Allowance dated Jan. 11, 2021 in Application No. 109300591.
TIPO; Notice of Allowance dated Jan. 11, 2021 in Application No. 109300593.
TIPO; Office Action dated Jan. 11, 2021 in Application No. 109300594.
USPTO; Non-Final Office Action dated Dec. 1, 2020 in U.S. Appl. No. 14/219,879.
USPTO; Final Office Action dated Feb. 1, 2021 in U.S. Appl. No. 14/829,565.
USPTO; Non-Final Office Action dated Dec. 24, 2020 in U.S. Appl. No. 15/286,503.
USPTO; Final Office Action dated Feb. 12, 2021 in U.S. Appl. No. 15/377,439.
USPTO Non-Final Office Action dated Dec. 10, 2020 in U.S. Appl. No. 15/380,921.
USPTO; Non-Final Office Action dated Feb. 3, 2021 in U.S. Appl. No. 15/611,707.
USPTO; Final Office Action dated Jan. 19, 2021 in U.S. Appl. No. 15/636,307.
USPTO; Non-Final Office Action dated Jan. 6, 2021 in U.S. Appl. No. 15/726,959.
USPTO; Advisory Action dated Dec. 15, 2020 in U.S. Appl. No. 15/835,328.
USPTO; Notice of Allowance dated Jan. 14, 2021 in U.S. Appl. No. 15/835,352.
USPTO; Final Office Action dated Jan. 11, 2021 in U.S. Appl. No. 15/890,037.
USPTO; Advisory Action dated Jan. 8, 2021 in U.S. Appl. No. 15/923,834.
USPTO; Advisory Action dated Dec. 24, 2020 in U.S. Appl. No. 15/925,532.
USPTO; Non-Final Office Action dated Jan. 25, 2021 in U.S. Appl. No. 15/925,532.
USPTO; Final Office Action dated Feb. 18, 2021 in U.S. Appl. No. 15/940,729.
USPTO; Final Office Action dated Jan. 12, 2021 in U.S. Appl. No. 15/940,759.
USPTO; Final Office Action dated Dec. 15, 2020 in U.S. Appl. No. 15/962,980.
USPTO; Advisory Action dated Oct. 27, 2020 in U.S. Appl. No. 15/974,948.
USPTO; Advisory Action dated Dec. 10, 2020 in U.S. Appl. No. 16/000,109.
USPTO; Advisory Action dated Dec. 15, 2020 in U.S. Appl. No. 16/000,125.
USPTO; Advisory Action dated Dec. 14, 2020 in U.S. Appl. No. 16/000,156.
USPTO; Advisory Action dated Dec. 22, 2020 in U.S. Appl. No. 16/004,041.
USPTO; Non-Final Office Action dated Nov. 24, 2020 in U.S. Appl. No. 16/039,938.
USPTO; Advisory Action dated Jan. 14, 2021 in U.S. Appl. No. 16/055,532.
USPTO; Final Office Action dated Dec. 15, 2020 in U.S. Appl. No. 16/108,950.
USPTO; Final Office Action dated Jan. 6, 2021 in U.S. Appl. No. 16/117,530.
USPTO; Notice of Allowance dated Feb. 12, 2021 in U.S. Appl. No. 16/128,282.
USPTO; Notice of Allowance dated Feb. 8, 2021 in U.S. Appl. No. 16/132,142.
USPTO; Final Office Action dated Dec. 14, 2020 in U.S. Appl. No. 16/151,074.
USPTO; Advisory Action dated Feb. 16, 2021 in U.S. Appl. No. 16/151,074.
USPTO; Final Office Action dated Dec. 18, 2020 in U.S. Appl. No. 16/167,164.
USPTO; Advisory Action dated Dec. 21, 2020 in U.S. Appl. No. 16/172,535.
USPTO; Final Office Action dated Jan. 29, 2021 in U.S. Appl. No. 16/176,517.
USPTO; Non-Final Office Action dated Dec. 11, 2021 in U.S. Appl. No. 16/202,941.
USPTO; Final Office Action dated Dec. 9, 2020 in U.S. Appl. No. 16/210,922.
USPTO; Notice of Allowance dated Dec. 15, 2020 in U.S. Appl. No. 16/242,852.
USPTO; Advisory Action dated Jan. 22, 2021 in U.S. Appl. No. 16/252,567.
USPTO; Final Office Action dated Dec. 8, 2020 in U.S. Appl. No. 16/397,045.
USPTO; Advisory Action dated Jan. 27, 2021 in U.S. Appl. No. 16/397,045.
USPTO; Final Office Action dated Dec. 14, 2020 in U.S. Appl. No. 16/400,814.
USPTO; Non-Final Office Action dated Jan. 12, 2021 in U.S. Appl. No. 16/453,249.
USPTO; Non-Final Office Action dated Dec. 28, 2020 in U.S. Appl. No. 16/517,122.
USPTO; Non-Final Office Action dated Feb. 11, 2021 in U.S. Appl. No. 16/565,460.
USPTO; Notice of Allowance dated Jan. 25, 2021 in U.S. Appl. No. 16/679,885.
USPTO; Non-Final Office Action dated Feb. 8, 2021 in U.S. Appl. No. 16/685,787.
USPTO; Non-Final Office Action dated Jan. 8, 2021 in U.S. Appl. No. 16/752,514.
USPTO; Notice of Allowance dated Dec. 28, 2020 in U.S. Appl. No. 16/833,279.
USPTO; Notice of Allowance dated Nov. 23, 2020 in U.S. Appl. No. 29/726,623.
Aoyagi et al. “Laser-assisted atomic layer epitaxy” Materials Science and Engineering, pp. 121-132 (1991).
Galesic et al. “Formation of vanadium nitride by rapid thermal processing” Thin Solid Films 349(1), 7 pages (1999).
Kim et al. “High Growth Rate in Atomic Layer Deposition of TiO2 Thin Films by UV Irradiation” Electrochemical and Solid-State Letters, 14(4), pp. H146-H148 (2011).
Lee et al. “Enahancement of Iodine Adsorption on Ruthenium Glue Layer for Seedless CECVD of Cu” Electrochemical and Solid-State Letters, 8(2) C39-C42 (2005).
Lee et al. “Growth without Postannealing of Monoclinic VO2 Thin Film by Atomic Layer Deposition Using VC14 as Precursor” Coatings, 8, 431, pp. 1-11 (2018).
Lee et al. “Photo-Induced Atomic Layer Deposition of Tantalum Oxide Thin Films from Ta(OC2H5)5 and O2” J of the Electrochemical Society. 151(1) pp. C52-C55 (2004).
Merdrignac-Conanec et al. “Nitridation under ammonia of high surface area vanadium aerogels” Journal of Solid State Chemistry 178(1), 8 pages (2005).
Nikolic et al. “The dependence of the work function of rare earth metals on their electron structure” Microelectronics Journal 27, 93-96 (1996).
Putkonen et al. “Low-Temperature ALE Deposition of Y2O3 Thin Films from β-Diketonate Precursors” Chemical Vapor Deposition 7(1) pp. 44-50 (2001).
U.S. Appl. No. 62/274,238, filed Jan. 1, 2016 in the names of Alexander S. Polyak et al., and entitled “Non-Metallic Thermal CVD/ALD Gas Injector and Purge System” pp. 1-63 (2016).
Vayrynen et al. “Photo-Assisted Atomic Layer Deposition and Chemical Vapor Deposition of Metal and Metal Oxide Thin Films” Thesis, Oct. 2015, 146 pages (2005).
CNIPA; Office Action dated Jul. 21, 2021 in Application No. 201610131743.1.
CNIPA; Office Action dated Jul. 23, 2021 in Application No. 201710131319.1.
CNIPA; Notice of Allowance dated Jun. 3, 2021 in Application No. 201711057929.8.
CNIPA; Office Action dated Sep. 13, 2021 in Application No. 201780076230.8.
CNIPA; Office Action dated Sep. 13, 2021 in Application No. 201780076321.1.
CNIPA; Office Action dated Apr. 30, 2021 in Application No. 201810018936.5.
CNIPA; Office Action dated Apr. 16, 2021 in Application No. 201810116717.0.
CNIPA; Notice of Allowance dated Sep. 15, 2021 in Application No. 201810116717.0.
CNIPA; Office Action dated May 26, 2021 in Application No. 201810215131.X.
CNIPA; Office Action dated Jun. 16, 2021 in Application No. 201810344382.8.
CNIPA; Notice of Allowance dated Oct. 11, 2021 in Application No. 201810344382.8.
CNIPA; Office Action dated Jul. 5, 2021 in Application No. 201810530514.6.
CNIPA; Office Action dated Jun. 30, 2021 in Application No. 201810755771.X.
CNIPA; Office Action dated Sep. 23, 2021 in Application No. 201880048547.5.
CNIPA; Office Action dated May 19, 2021 in Application No. 201880072606.2.
CNIPA; Office Action dated May 31, 2021 in Application No. 201910857144.1.
CNIPA; Office Action dated Jun. 2, 2021 in Application No. 201910920881.1.
CNIPA; Office Action dated Jul. 5, 2021 in Application No. 201911042495.3.
CNIPA; Office Action dated Apr. 27, 2021 in Application No. 201911250100.9.
CNIPA; Office Action dated Jul. 7, 2021 in Application No. 201980011788.7.
CNIPA; Notice of Allowance dated Jun. 16, 2021 in Application No. 202130111248.6.
EPO; Extended European Search Report dated Aug. 11, 2021 in Application No. 21169226.4.
JPO; Notice of Allowance dated Aug. 11, 2021 in Application No. 2018-024655.
JPO; Office Action dated Aug. 2, 2021 in Application No. 2019-504674.
JPO; Office Action dated Sep. 10, 2021 in Application No. 2019-531445.
JPO; Notice of Allowance dated Jun. 30, 2021 in Application No. 2021-004208.
KIPO; Office Action dated Jun. 28, 2021 in Application No. 10-2014-0027217.
KIPO; Notice of Allowance dated May 27, 2021 in Application No. 10-2014-0105478.
KIPO; Notice of Allowance dated Aug. 17, 2021 in Application No. 10-2014-0122903.
KIPO; Notice of Allowance dated Sep. 8, 2021 in Application No. 10-2014-0136089.
KIPO; Notice of Allowance dated Jul. 6, 2021 in Application No. 10-2014-0145220.
KIPO; Notice of Allowance dated Sep. 23, 2021 in Application No. 2014-0156196.
KIPO; Notice of Allowance dated Jul. 21, 2021 in Application No. 10-2015-0025314.
KIPO; Office Action dated May 19, 2021 in Application No. 10-2015-0036819.
KIPO; Office Action dated Jun. 23, 2021 in Application No. 10-2015-0037658.
KIPO; Office Action dated Sep. 6, 2021 in Application No. 10-2015-0046393.
KIPO; Office Action dated Jun. 10, 2021 in Application No. 2015-61391.
KIPO; Office Action dated Sep. 3, 2021 in Application No. 2017-37847.
KIPO; Office Action dated Aug. 2, 2021 in Application No. 2017-43865.
KIPO; Office Action dated Oct. 1, 2021 in Application No. 2017-43919.
KIPO; Office Action dated Sep. 28, 2021 in Application No. 2017-49172.
KIPO; Notice of Allowance dated Sep. 28, 2021 in Application No. 2017-54647.
KIPO; Office Action dated Aug. 30, 2021 in Application No. 2017-81515.
KIPO; Office Action dated Sep. 10, 2021 in Application No. 2017-86083.
KIPO; Office Action dated Jun. 29, 2021 in Application No. 10-2017-0066979.
KIPO; Notice of Allowance dated Jun. 24, 2021 in Application No. 10-2019-0044213.
KIPO; Office Action dated Jun. 17, 2021 in Application No. 10-2021-0051860.
KIPO; Office Action dated Aug. 18, 2021 in Application No. 10-2021-0090283.
KIPO; Notice of Allowance dated Sep. 2, 2021 in Application No. 30-2020-0047043.
TIPO; Office Action dated Jun. 22, 2021 in Application No. 104108277.
TIPO; Notice of Allowance dated Sep. 22, 2021 in Application No. 104108277.
TIPO; Office Action dated Jun. 2, 2021 in Application No. 105129977.
TIPO; Notice of Allowance dated Sep. 9, 2021 in Application No. 105129977.
TIPO; Notice of Allowance dated Jun. 4, 2021 in Application No. 105131896.
TIPO; Notice of Allowance dated Jul. 30, 2021 in Application No. 105134275.
TIPO; Notice of Allowance dated Feb. 24, 2021 in Application No. 106113604.
TIPO; Notice of Allowance dated Sep. 3, 2021 in Application No. 106115126.
TIPO; Office Action dated Jun. 21, 2021 in Application No. 106120902.
TIPO; Notice of Allowance dated Jun. 30, 2021 in Application No. 106121797.
TIPO; Notice of Allowance dated Sep. 1, 2021 in Application No. 106122231.
TIPO; Notice of Allowance dated Jun. 3, 2021 in Application No. 106123203.
TIPO; Notice of Allowance dated Aug. 24, 2021 in Application No. 106124129.
TIPO; Notice of Allowance dated Jul. 28, 2021 in Application No. 106129491.
TIPO; Notice of Allowance dated Aug. 10, 2021 in Application No. 106129971.
TIPO; Office Action dated Jun. 15, 2021 in Application No. 106133152.
TIPO; Notice of Allowance dated Oct. 12, 2021 in Application No. 106135925.
TIPO; Office Action dated Jul. 13, 2021 in Application No. 106138996.
TIPO; Notice of Allowance dated Sep. 24, 2021 in Application No. 106143559.
TIPO; Office Action dated Aug. 5, 2021 in Application No. 106143566.
TIPO; Office Action dated May 26, 2021 in Application No. 106143568.
TIPO; Notice of Allowance dated Jul. 30, 2021 in Application No. 106143570.
TIPO; Office Action dated Jun. 7, 2021 in Application No. 107103230.
TIPO; Office Action dated Aug. 10, 2021 in Application No. 107103230.
TIPO; Office Action dated Sep. 8, 2021 in Application No. 107105788.
TIPO; Office Action dated Aug. 3, 2021 in Application No. 107105982.
TIPO; Office Action dated Aug. 16, 2021 in Application No. 107114888.
TIPO; Office Action dated Sep. 28, 2021 in Application No. 109112983.
TIPO; Office Action dated Sep. 13, 2021 in Application No. 109119438.
TIPO; Office Action dated Oct. 18, 2021 in Application No. 109300594.
TIPO; Notice of Allowance dated Jun. 9, 2021 in Application No. 109303437.
TIPO; Notice of Allowance dated Oct. 1, 2021 in Application No. 110118827.
TIPO; Notice of Allowance dated Jun. 30, 2021 in Application No. 110301018.
TIPO; Notice of Allowance dated Jul. 29, 2021 in Application No. 110301101.
TIPO; Notice of Allowance dated Jul. 27, 2021 in Application No. 110302670.
USPTO; Final Office Action dated Aug. 4, 2021 in U.S. Appl. No. 14/219,879.
USPTO; Non-Final Office Action dated Jun. 10, 2021 in U.S. Appl. No. 15/262,990.
USPTO; Final Office Action dated Oct. 1, 2021 in U.S. Appl. No. 15/262,990.
USPTO; Non-Final Office Action dated Jul. 9, 2021 in U.S. Appl. No. 15/286,503.
USPTO; Notice of Allowance dated Jun. 29, 2021 in U.S. Appl. No. 15/377,439.
USPTO; Non-Final Office Action dated Jun. 25, 2021 in U.S. Appl. No. 15/380,909.
USPTO; Final Office Action dated Jun. 21, 2021 in Application No. 15/380,921.
USPTO; Advisory Action dated Aug. 30, 2021 in U.S. Appl. No. 15/380,921.
USPTO; Non-Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 15/380,921.
USPTO; Advisory Action dated Jul. 27, 2021 in U.S. Appl. No. 15/402,993.
USPTO; Final Office Action dated Jun. 9, 2021 in U.S. Appl. No. 15/491,726.
USPTO; Advisory Action dated Aug. 24, 2021 in U.S. Appl. No. 15/491,726.
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 15/491,726.
USPTO; Notice of Allowance dated Aug. 25, 2021 in U.S. Appl. No. 15/611,707.
USPTO; Non-Final Office Action dated Sep. 16, 2021 in U.S. Appl. No. 15/636,307.
USPTO; Advisory Action dated Jun. 11, 2021 in U.S. Appl. No. 15/690,017.
USPTO; Non-Final Office Action dated Jun. 17, 2021 in U.S. Appl. No. 15/690,017.
USPTO; Final Office Action dated Jul. 15, 2021 in U.S. Appl. No. 15/726,959.
USPTO; Advisory Action dated Sep. 21, 2021 in U.S. Appl. No. 15/726,959.
USPTO; Notice of Allowance dated Sep. 15, 2021 in U.S. Appl. No. 15/835,328.
USPTO; Advisory Action dated Jun. 11, 2021 in U.S. Appl. No. 15/909,705.
USPTO; Notice of Allowance dated Jun. 4, 2021 in U.S. Appl. No. 15/923,834.
USPTO; Final Office Action dated Jun. 28, 2021 in U.S. Appl. No. 15/925,532.
USPTO; Advisory Action dated Aug. 27, 2021 in U.S. Appl. No. 15/925,532.
USPTO; Non-Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 15/925,532.
USPTO; Non-Final Office Action dated Jun. 16, 2021 in U.S. Appl. No. 15/940,729.
USPTO; Notice of Allowance dated Sep. 28, 2021 in U.S. Appl. No. 15/940,729.
USPTO; Non-Final Office Action dated Aug. 2, 2021 in U.S. Appl. No. 15/962,980.
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 15/967,146.
USPTO; Final Office Action dated Aug. 3, 2021 in U.S. Appl. No. 15/974,948.
USPTO; Advisory Action dated Oct. 21, 2021 in U.S. Appl. No. 15/974,948.
USPTO; Final Office Action dated Oct. 12, 2021 in U.S. Appl. No. 15/996,286.
USPTO; Non-Final Office Action dated Jul. 9, 2021 in U.S. Appl. No. 15/997,445.
USPTO; Final Office Action dated Aug. 5, 2021 in U.S. Appl. No. 16/000,109.
USPTO; Final Office Action dated Oct. 20, 2021 in U.S. Appl. No. 16/000,125.
USPTO; Final Office Action dated Sep. 3, 2021 in U.S. Appl. No. 16/004,041.
USPTO; Non-Final Office Action dated Oct. 22, 2021 in U.S. Appl. No. 16/042,791.
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 16/105,745.
USPTO; Non-Final Office Action dated Sep. 29, 2021 in U.S. Appl. No. 16/105,761.
USPTO; Non-Final Office Action dated Jun. 25, 2021 in U.S. Appl. No. 16/105,802.
USPTO; Final Office Action dated Jul. 27, 2021 in U.S. Appl. No. 16/108,950.
USPTO; Advisory Action dated Oct. 1, 2021 in U.S. Appl. No. 16/108,950.
USPTO; Non-Final Office Action dated Jun. 18, 2021 in U.S. Appl. No. 16/117,530.
USPTO; Final Office Action dated Jul. 8, 2021 in U.S. Appl. No. 16/151,074.
USPTO; Notice of Allowance dated Sep. 17, 2021 in U.S. Appl. No. 16/151,074.
USPTO; Non-Final Office Action dated Sep. 16, 2021 in U.S. Appl. No. 16/152,260.
USPTO; Advisory Action dated Aug. 2, 2021 in U.S. Appl. No. 16/172,535.
USPTO; Non-Final Office Action dated Oct. 15, 2021 in U.S. Appl. No. 16/172,535.
USPTO; Final Office Action dated Jun. 14, 2021 in U.S. Appl. No. 16/202,941.
USPTO; Advisory Action dated Aug. 16, 2021 in U.S. Appl. No. 16/202,941.
USPTO; Non-Final Office Action dated Sep. 20, 2021 in U.S. Appl. No. 16/202,941.
USPTO; Final Office Action dated Jul. 26, 2021 in U.S. Appl. No. 16/206,589.
USPTO; Notice of Allowance dated Sep. 13, 2021 in U.S. Appl. No. 16/206,589.
USPTO; Non-Final Office Action dated Aug. 25, 2021 in U.S. Appl. No. 16/210,922.
USPTO; Final Office Action dated Sep. 1, 2021 in Application No. 16/240,392.
USPTO; Notice of Allowance dated Oct. 15, 2021 in Application No. 16/240,392.
USPTO; Final Office Action dated Sep. 7, 2021 in U.S. Appl. No. 16/251,534.
USPTO; Final Office Action dated Aug. 18, 2021 in U.S. Appl. No. 16/252,567.
USPTO; Final Office Action dated Sep. 21, 2021 in U.S. Appl. No. 16/252,569.
USPTO; Advisory Action dated Jul. 15, 2021 in U.S. Appl. No. 16/468,258.
USPTO; Non-Final Office Action dated Oct. 21, 2021 in U.S. Appl. No. 16/468,258.
USPTO; Final Office Action dated May 12, 2021 in U.S. Appl. No. 16/546,543.
USPTO; Advisory Action dated Jul. 8, 2021 in U.S. Appl. No. 16/546,543.
USPTO; Ex Parte Quayle Action dated Aug. 6, 2021 in U.S. Appl. No. 16/563,473.
USPTO; Notice of Allowance dated Sep. 30, 2021 in U.S. Appl. No. 16/563,473.
USPTO; Non-Final Office Action dated Oct. 5, 2021 in U.S. Appl. No. 16/588,807.
USPTO; Notice of Allowance dated Oct. 18, 2021 in U.S. Appl. No. 16/601,593.
USPTO; Non-Final Office Action dated Jun. 11, 2021 in U.S. Appl. No. 16/671,847.
USPTO; Non-Final Office Action dated Jun. 24, 2021 in U.S. Appl. No. 16/673,860.
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 16/692,859.
USPTO; Notice of Allowance dated Jul. 20, 2021 in U.S. Appl. No. 16/704,835.
USPTO; Non-Final Office Action dated Aug. 31, 2021 in U.S. Appl. No. 16/712,707.
USPTO; Non-Final Office Action dated Sep. 21, 2021 in U.S. Appl. No. 16/736,336.
USPTO; Final Office Action dated Sep. 15, 2021 in U.S. Appl. No. 16/789,138.
USPTO; Non-Final Office Action dated Jun. 24, 2021 in U.S. Appl. No. 16/792,058.
USPTO; Notice of Allowance dated Oct. 19, 2021 in U.S. Appl. No. 16/792,058.
USPTO; Non-Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 16/792,544.
USPTO; Notice of Allowance dated Sep. 27, 2021 in U.S. Appl. No. 16/792,571.
USPTO; Non-Final Office Action dated Aug. 17, 2021 in U.S. Appl. No. 16/797,346.
USPTO; Notice of Allowance dated Jul. 21, 2021 in U.S. Appl. No. 16/816,078.
USPTO; Non-Final Office Action dated Jun. 23, 2021 in U.S. Appl. No. 16/827,012.
USPTO; Non-Final Office Action dated Feb. 23, 2021 in U.S. Appl. No. 16/827,506.
USPTO; Notice of Allowance dated May 27, 2021 in U.S. Appl. No. 16/827,506.
USPTO; Final Office Action dated Oct. 6, 2021 in U.S. Appl. No. 16/828,753.
USPTO; Non-Final Office Action dated Jul. 28, 2021 in U.S. Appl. No. 16/835,283.
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 16/840,960.
USPTO; Non-Final Office Action dated Aug. 3, 2021 in U.S. Appl. No. 16/849,793.
USPTO; Non-Final Office Action dated Jun. 15, 2021 in U.S. Appl. No. 16/861,144.
USPTO; Final Office Action dated Sep. 17, 2021 in U.S. Appl. No. 16/861,144.
USPTO; Non-Final Office Action dated Sep. 1, 2021 in U.S. Appl. No. 16/867,385.
USPTO; Final Office Action dated Oct. 7, 2021 in U.S. Appl. No. 16/872,045.
USPTO; Final Office Action dated Oct. 14, 2021 in U.S. Appl. No. 16/878,443.
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 16/886,405.
USPTO; Non-Final Office Action dated Jul. 28, 2021 in U.S. Appl. No. 16/888,423.
USPTO; Non-Final Office Action dated Oct. 13, 2021 in U.S. Appl. No. 16/893,206.
USPTO; Notice of Allowance dated Jun. 17, 2021 in U.S. Appl. No. 16/924,595.
USPTO; Non-Final Office Action dated Jul. 27, 2021 in U.S. Appl. No. 16/930,193.
USPTO; Non-Final Office Action dated Jun. 25, 2021 in U.S. Appl. No. 16/930,305.
USPTO; Non-Final Office Action dated Sep. 14, 2021 in U.S. Appl. No. 16/932,707.
USPTO; Non-Final Office Action dated Oct. 4, 2021 in U.S. Appl. No. 16/935,275.
USPTO; Notice of Allowance dated Sep. 22, 2021 in U.S. Appl. No. 16/935,280.
USPTO; Non-Final Office Action dated Aug. 23, 2021 in U.S. Appl. No. 16/938,868.
USPTO; Non-Final Office Action dated Oct. 12, 2021 in U.S. Appl. No. 16/944,763.
USPTO; Non-Final Office Action dated Aug. 19, 2021 in U.S. Appl. No. 16/992,806.
USPTO; Non-Final Office Action dated Jul. 7, 2021 in U.S. Appl. No. 16/999,065.
USPTO; Final Office Action dated Oct. 21, 2021 in U.S. Appl. No. 16/999,065.
USPTO; Final Office Action dated Jul. 23, 2021 in U.S. Appl. No. 17/009,093.
USPTO; Advisory Action dated Oct. 5, 2021 in U.S. Appl. No. 17/009,093.
USPTO; Non-Final Office Action dated Sep. 28, 2021 in U.S. Appl. No. 17/023,129.
USPTO; Notice of Allowance dated Oct. 14, 2021 in U.S. Appl. No. 17/024,092.
USPTO; Notice of Allowance dated Oct. 4, 2021 in U.S. Appl. No. 17/028,066.
USPTO; Non-Final Office Action dated Sep. 10, 2021 in U.S. Appl. No. 17/038,514.
USPTO; Non-Final Office Action dated Oct. 22, 2021 in U.S. Appl. No. 17/073,544.
USPTO; Non-Final Office Action dated Sep. 30, 2021 in U.S. Appl. No. 17/093,224.
USPTO; Non-Final Office Action dated Sep. 22, 2021 in U.S. Appl. No. 17/126,275.
USPTO; Non-Final Office Action dated Sep. 23, 2021 in U.S. Appl. No. 17/254,111.
USPTO; Non-Final Office Action dated Sep. 27, 2021 in U.S. Appl. No. 17/254,366.
USPTO; Notice of Allowance dated Jul. 1, 2021 in U.S. Appl. No. 29/679,620.
USPTO; Notice of Allowance dated Jul. 9, 2021 in U.S. Appl. No. 29/692,490.
USPTO; Non-Final Office Action dated Jul. 14, 2021 in U.S. Appl. No. 29/695,044.
USPTO; Notice of Allowance dated Jun. 8, 2021 in U.S. Appl. No. 29/696,472.
USPTO; Notice of Allowance dated Sep. 21, 2021 in U.S. Appl. No. 29/702,865.
Alen et al. “Atomic layer deposition of molybdenum nitride thin films for cu metallizations” J of The Electrochemical Society, 152(5) G361-G366 (2005).
Best et al. “Complex Halides of the Transition Metals. 24.1 Reactions of Dimeric Molybdenum (II) Halide Complexes Containing Strong Metal-Metal Bonds with Bidentate Tertiary Phosphines and Arsines” Inorganic Chemistry, vol. 17, No. 1, pp. 99-104 (1978).
Blakeney et al. “Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent” Chem. Mater., 30, pp. 1844-1848 (2018).
Buitrago et al. “SnOx high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography” Abstract, 1 page (2016).
Buitrago et al. “State-of-the-art EUV materials and processes for the 7 nm node and beyond” Proc of SPIE, vol. 10143, 8 pages (2017).
Cheng et al. “Improved High-Temperature Leakage in High-Density MIM Capcitors by Using a TiLaO Dielectric and an Ir Electrode” IEEE Electron Device Letters, vol. 28, No. 12, 3 pages (2007).
Firestop Support Plate, Type B, 6 In Apr. 4, 2012, Amazon. Com, May 10, 2021, https://www.amazon.com/AmeriVent-Firestop-Support-Plate-Type/dp/B007R7W951/ (2012).
Gertsch et al. “SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching” Chem. Mater., 31, pp. 3624-3635 (2019).
Han et al. “Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition” Dalton Transactions 49.14 (2020): 4306-4314.
Hayashi et al. “2,2-Difluoro-1,3-dimethylimidazolidine (DFI). A new fluorinating agent” Chem. Commun. pp. 1618-1619 (2002).
Imai et al. “Energetic stability and magnetic moment of tri-, tetra-, and octa—ferromagnetic element nitrides predicted by first-principle calculations” J of Alloys and Compounds, vol. 611, 19 pages (2019).
Jacoby “Chemical deposition methods to the rescue” Cen. Acs. Org., pp. 29-32 (2018).
Jiang et al. “Sensitizer for EUV Chemically Amplified Resist: Metal versus Halogen” J of Photopolymer Science and Technology, vol. 32, No. 1, pp. 21-25 (2019).
Kang et al. “Optical Performance of Extreme Ultraviolet Lithography Mask with an Indium Tin Oxide Absorber” J of Nanoscience and Nanotechnology, vol. 12, pp. 3330-3333 (2012).
Kim et al. “Atomic layer deposition of transition metals for silicide contact formation: Growth characteristics and silicidation” Microelectronic Engineering, 106, pp. 69-75 (2013).
Lim et al. “Atomic layer deposition of transition metals” Nature Materials, vol. 2 pp. 749-754 (2003).
Maina et al. “Atomic layer deposition of transition metal films and nanostructures for electronic and catalytic applications” Critical Reviews in Solid State and Materials Sciences, Abstract, 2 pages (2020).
Miikkulainen et al. “Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends” Journal of Applied Physics, 112, 102 pages (2013).
Niskanen et al. “Radical-enhanced atomic layer deposition of metallic copper thin films” Journal of the Electrochemical Society 152(1) pp. G25-G28 (2004).
O'Hanlon “A User's Guide to Vacuum Technology” Third Edition, Chapter 19, pp. 359-378 (2003).
Ovanesyan et al. “Atomic Layer Deposition of SiCxNy Using Si2C16 and CH3NH2 Plasma” Chem. Mater. 2017, 29, pp. 6269-6278 (2017).
Park et al. “Superfilling CVD of copper using a catalytic surfactant” Proceedings of the IEEE 2001 International Interconnect Technology Conference, 3 pages (2001).
Petrov et al. “1,1,2,2-Tetrafluoroethyl-N,N-dimethylamine: a new selective fluorinating agent” J of Fluorine Chemistry, 109, pp. 25-31 (2001).
Popov et al. “Atomic Layer Deposition of PbI2 Thin Films” Chem. Mater. 31, pp. 1101-1109 (2019).
Popovici et al. “High-performance (EOT<0.4nm, Jg˜10-7 A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor” 2018 IEEE International Electron Devices Meeting (IEDM), 4 pages (2018).
Puurunen “Surface Chemistry of Atomic Layer Depostion: A Case Study for the Trimethylaluminum/Water Process” Journal of Applied Physics, 97, 55 pages (2005).
Rahemi et al. “Variation in electron work function with temperature and its effect on the Young's modulus of metals” Scripta Materialia, 99, pp. 41-44 (2015).
SciFinder Search Results on hydrazido-based precursor for boron nitride films, search conducted Nov. 5, 2020, 5 pages (2020).
Shiba et al. “Stable yttrium oxyfluoride used in plasma process chamber” J. Vac. Sci. Technol. A, 35(2), 6 pages (2017).
Shigemoto et al. “Thermal cleaning of silicon nitride with fluorine and additive mixture” 1 page (2007).
Takaoka et al. “F-Propene-Dialkylamine Reaction Products as Fluorinating Agents” Bulletin of the Chemical Socity of Japan, vol. 52 (11), pp. 3377-3380 (1979).
Tsoutsou et al. “Atomic layer deposition of LaxZr1-xO2-d (x=0.25) high-k dielectrics for advanced gate stacks” Applied Physics Letters, 94, 3 pages (2009).
U.S. Appl. No. 60/545,181, filed Feb. 13, 2004 in the names of Matthew G. Goodman et al., and entitled “Forced Flow Susceptor with Exit Holes and Veins for Improvided Process” pp. 1-15 (2004).
U.S. Appl. No. 60/591,258, filed Jul. 26, 2004 in the names of Jeroen Stoutyesdijk et al., and entitled “Susceptor Support for Eliminating Backside Nodules” pp. 1-71 (2004).
U.S. Appl. No. 62/504,470, filed May 10, 2017 in the names of Jennifer Y. Sun et al., and entitled “Metal-Oxy-Fluoride Films for Chamber Components” pp. 1-82 (2017).
Van Asselt et al. “New Palladium Complexes of Cis-Fixed Bidentate Nitrogen Ligands as Catalysts for Carbon-Carbon Bond Formation” Organometallics, 11, pp. 1999-2001 (1992).
Van Asselt et al. “On the Mechanism of Formation of Homocoupled Products in the Carbon-Carbon Cross-Coupling Reaction Catalyzed by Palladium Complexes Containing Rigid Bidentate Nitrogen Ligands” Organometallics, 13, pp. 1972-1980 (1994).
Vayrynen et al. “Atomic Layer Deposition of Nickel Nitride Thin Films Using NiCL2 (TMPDA) and Tert-Butylhydrazine as Precursors” Phy. Status Solidi A, 216, 9 pages (2019).
Vesters et al. “Sensitizers in EUV Chemically Amplified Resist: Mechamsm of sensitivity improvement” Proc. SPIE 10583 Extreme Ultraviolet (EUV) Lithography IX, 1058307, 11 pages (2018).
Wilklow-Marnell et al. “First-row transitional-metal oxalate resists for EUV” J. Micro/Nanolith. MEMS MOEMS 17(4) Oct.-Dec. 2018, 9 pages (2018).
Zhang et al. “Mechanical Stability of Air-gap Interconnects” Proc. Future Fab International, pp. 81-87 (2008).
Zientara et al. Journal of the European Ceramic Society, 27, Abstract, 1 page (2007).
CNIPA; Office Action dated Mar. 30, 2021 in Application No. 201610131743.1.
CNIPA; Office Action dated Mar. 1, 2021 in Application No. 201710131319.1.
CNIPA; Notice of Allowance dated Mar. 30, 2021 in Application No. 201710762817.6.
CNIPA; Office Action dated Jan. 28, 2021 in Application No. 201711057557.9.
CNIPA; Office Action dated Jan. 26, 2021 in Application No. 201711057929.8.
CNIPA; Office Action dated Apr. 19, 2021 in Application No. 201711328250.8.
CNIPA; Notice of Allowance dated Apr. 7, 2021 in Application No. 201780044761.9.
CNIPA; Office Action dated Jan. 29, 2021 in Application No. 201780076230.8.
CNIPA; Office Action dated Jan. 27, 2021 in Application No. 201780076321.1.
CNIPA; Office Action dated Mar. 24, 2021 in Application No. 201880048547.5.
CNIPA; Office Action dated Dec. 22, 2020 in Application No. 201910378791.4.
CNIPA; Notice of Allowance dated Apr. 7, 2021 in Application No. 202030579755.8.
EPO; Extended European Search Report dated Apr. 6, 2021 in Application No. 21150514.4.
JPO; Notice of Allowance dated Apr. 6, 2021 in Application No. 2017-139817.
JPO; Office Action dated Mar. 31, 2021 in Application No. 2018-024655.
JPO; Notice of Allowance dated Mar. 17, 2021 in Application No. 2020-010953.
KIPO; Office Action dated Mar. 23, 2021 in Application No. 10-2014-0011765.
KIPO; Office Action dated Apr. 27, 2021 in Application No. 10-2014-0027217.
KIPO; Notice of Allowance dated Apr. 15, 2021 in Application No. 10-2014-0103853.
KIPO; Notice of Allowance dated Mar. 25, 2021 in Application No. 10-2014-0128626.
KIPO; Office Action dated Apr. 20, 2021 in Application No. 10-2014-0136089.
KIPO; Office Action dated Mar. 19, 2021 in Application No. 10-2014-0156196.
KIPO; Office Action dated Mar. 29, 2021 in Application No. 10-2014-0165685.
KIPO; Office Action dated Apr. 5, 2021 in Application No. 10-2015-0031720.
KIPO; Office Action dated Apr. 19, 2021 in Application No. 10-2015-0035094.
KIPO; Office Action dated Mar. 8, 2021 in Application No. 10-2017-0054647.
KIPO; Office Action dated Mar. 10, 2021 in Application No. 10-2017-0055703.
KIPO; Notice of Allowance dated May 24, 2021 in Application No. 10-2020-0101096.
KIPO; Notice of Allowance dated Apr. 1, 2021 in Application No. 30-2020-0030139 (M001).
KIPO; Notice of Allowance dated Apr. 1, 2021 in Application No. 30-2020-0030139 (M002).
TIPO; Notice of Allowance dated May 13, 2021 in Application No. 105122394.
TIPO; Notice of Allowance dated Mar. 5, 2021 in Application No. 105131284.
TIPO; Office Action dated Feb. 25, 2021 in Application No. 105134275.
TIPO; Notice of Allowance dated Mar. 4, 2021 in Application No. 106100823.
TIPO; Notice of Allowance dated May 6, 2021 in Application No. 106108522.
TIPO; Notice of Allowance dated Mar. 4, 2021 in Application No. 106111693.
TIPO; Office Action dated Feb. 25, 2021 in Application No. 106121797.
TIPO; Office Action dated Apr. 26, 2021 in Application No. 106122231.
TIPO; Office Action dated Apr. 22, 2021 in Application No. 106124126.
TIPO; Office Action dated Apr. 22, 2021 in Application No. 106124128.
TIPO; Notice of Allowance dated Mar. 25, 2021 in Application No. 106124130.
TIPO; Office Action dated Mar. 4, 2021 in Application No. 106127948.
TIPO; Office Action dated Mar. 15, 2021 in Application No. 106129971.
TIPO; Office Action dated Apr. 7, 2021 in Application No. 106135925.
TIPO; Office Action dated Apr. 7, 2021 in Application No. 106136905.
TIPO; Office Action dated Mar. 29, 2021 in Application No. 106143559.
TIPO; Office Action dated Mar. 31, 2021 in Application No. 106143570.
TIPO; Office Action dated Jan. 15, 2021 in Application No. 108142842.
TIPO; Office Action dated Jan. 25, 2021 in Application No. 108143562.
TIPO; Notice of Allowance dated May 18, 2021 in Application No. 109300595.
TIPO; Notice of Allowance dated Mar. 30, 2021 in Application No. 109305460.
USPTO; Notice ofAllowance dated Feb. 10, 2021 in U.S. Appl. No. 14/219,839.
USPTO; Advisory Action dated Apr. 13, 2021 in U.S. Appl. No. 14/829,565.
USPTO; Non-Final Office Action dated May 12, 2021 in U.S. Appl. No. 14/829,565.
USPTO; Final Office Action dated Feb. 24, 2021 in U.S. Appl. No. 15/262,990.
USPTO; Advisory Action dated Apr. 28, 2021 in U.S. Appl. No. 15/262,990.
USPTO; Final Office Action dated Mar. 25, 2021 in U.S. Appl. No. 15/286,503.
USPTO; Advisory Action dated Apr. 30, 2021 in U.S. Appl. No. 15/377,439.
USPTO; Final Office Action dated Jan. 7, 2021 in U.S. Appl. No. 15/380,909.
USPTO; Non-Final Office Action dated Feb. 9, 2021 in U.S. Appl. No. 15/402,993.
USPTO; Final Office Action dated May 21, 2021 in U.S. Appl. No. 15/402,993.
USPTO; Final Office Action dated Jun. 2, 2021 in U.S. Appl. No. 15/611,707.
USPTO; Advisory Action dated Mar. 25, 2021 in U.S. Appl. No. 15/636,307.
USPTO; Non-Final Office Action dated Apr. 21, 2021 in U.S. Appl. No. 15/636,307.
USPTO; Final Office Action dated Mar. 10, 2021 in U.S. Appl. No. 15/690,017.
USPTO; Notice of Allowance dated Apr. 16, 2021 in U.S. Appl. No. 15/691,241.
USPTO; Non-Final Office Action dated Mar. 18, 2021 in U.S. Appl. No. 15/835,328.
USPTO; Notice of Allowance dated Mar. 19, 2021 in U.S. Appl. No. 15/890,037.
USPTO; Final Office Action dated Apr. 19, 2021 in U.S. Appl. No. 15/909,705.
USPTO; Non-Final Office Action dated May 20, 2021 in U.S. Appl. No. 15/917,224.
USPTO; Non-Final Office Action dated Feb. 18, 2021 in U.S. Appl. No. 15/923,834.
USPTO; Advisory Action dated Apr. 28, 2021 in U.S. Appl. No. 15/940,729.
USPTO; Notice of Allowance dated Apr. 7, 2021 in U.S. Appl. No. 15/940,759.
USPTO; Advisory Action dated Feb. 22, 2021 in U.S. Appl. No. 15/962,980.
USPTO; Final Office Action dated Apr. 13, 2021 in U.S. Appl. No. 15/967,146.
USPTO; Advisory Action dated Jun. 2, 2021 in U.S. Appl. No. 15/967,146.
USPTO; Non-Final Office Action dated Feb. 19, 2021 in U.S. Appl. No. 15/974,948.
USPTO; Non-Final Office Action dated May 25, 2021 in U.S. Appl. No. 15/985,539.
USPTO; Non-Final Office Action dated Apr. 5, 2021 in U.S. Appl. No. 15/996,286.
USPTO; Non-Final Office Action dated Feb. 4, 2021 in U.S. Appl. No. 16/000,109.
USPTO; Non-Final Office Action dated May 19, 2021 in U.S. Appl. No. 16/000,125.
USPTO; Notice of Allowance dated Feb. 5, 2021 in U.S. Appl. No. 16/000,156.
USPTO; Non-Final Office Action dated Mar. 19, 2021 in U.S. Appl. No. 16/004,041.
USPTO; Final Office Action dated Mar. 23, 2021 in U.S. Appl. No. 16/039,817.
USPTO; Advisory Action dated May 28, 2021 in U.S. Appl. No. 16/039,817.
USPTO; Final Office Action dated Mar. 8, 2021 in U.S. Appl. No. 16/042,791.
USPTO; Advisory Action dated May 14, 2021 in U.S. Appl. No. 16/042,791.
USPTO; Notice of Allowance dated Mar. 10, 2021 in U.S. Appl. No. 16/055,532.
USPTO; Final Office Action dated Mar. 23, 2021 in U.S. Appl. No. 16/105,745.
USPTO; Final Office Action dated Mar. 24, 2021 in U.S. Appl. No. 16/105,761.
USPTO; Advisory Action dated May 20, 2021 in U.S. Appl. No. 16/105,761.
USPTO; Final Office Action dated Mar. 18, 2021 in U.S. Appl. No. 16/105,802.
USPTO; Advisory Action dated May 27, 2021 in U.S. Appl. No. 16/105,802.
USPTO; Advisory Action dated Feb. 17, 2021 in U.S. Appl. No. 16/108,950.
USPTO; Non-Final Office Action dated Apr. 13, 2021 in U.S. Appl. No. 16/108,950.
USPTO; Notice of Allowance dated Mar. 23, 2021 in U.S. Appl. No. 16/116,708.
USPTO; Advisory Action dated Mar. 10, 2021 in U.S. Appl. No. 16/117,530.
USPTO; Non-Final Office Action dated Mar. 23, 2021 in U.S. Appl. No. 16/151,074.
USPTO; Final Office Action dated May 6, 2021 in U.S. Appl. No. 16/152,260.
USPTO; Notice of Allowance dated Feb. 24, 2021 in U.S. Appl. No. 16/167,164.
USPTO; Non-Final Office Action dated Feb. 19, 2021 in U.S. Appl. No. 16/172,535.
USPTO; Final Office Action dated May 27, 2021 in U.S. Appl. No. 16/172,535.
USPTO; Advisory Action dated Apr. 5, 2021 in U.S. Appl. No. 16/176,517.
USPTO; Notice of Allowance dated May 13, 2021 in U.S. Appl. No. 16/176,517.
USPTO; Notice of Allowance dated Feb. 19, 2021 in U.S. Appl. No. 16/183,258.
USPTO; Notice of Allowance dated Feb. 10, 2021 in U.S. Appl. No. 16/205,899.
USPTO; Non-Final Office Action dated Mar. 29, 2021 in U.S. Appl. No. 16/206,589.
USPTO; Advisory Action dated Feb. 25, 2021 in U.S. Appl. No. 16/210,922.
USPTO; Final Office Action dated Mar. 29, 2021 in U.S. Appl. No. 16/219,555.
USPTO; Non-Final Office Action dated May 2, 2021 in U.S. Appl. No. 16/240,392.
USPTO; Advisory Action dated Jan. 26, 2021 in U.S. Appl. No. 16/251,534.
USPTO; Non-Final Office Action dated Feb. 23, 2021 in U.S. Appl. No. 16/251,534.
USPTO; Non-Final Office Action dated Mar. 30, 2021 in U.S. Appl. No. 16/252,567.
USPTO; Non-Final Office Action dated Mar. 4, 2021 in U.S. Appl. No. 16/252,569.
USPTO; Non-Final Office Action dated Apr. 20, 2021 in U.S. Appl. No. 16/397,045.
USPTO; Notice of Allowance dated Mar. 10, 2021 in U.S. Appl. No. 16/400,814.
USPTO; Non-Final Office Action dated May 7, 2021 in U.S. Appl. No. 16/423,824.
USPTO; Notice of Allowance dated Apr. 28, 2021 in U.S. Appl. No. 16/453,249.
USPTO; Final Office Action dated May 20, 2021 in U.S. Appl. No. 16/468,258.
USPTO; Notice of Allowance dated Apr. 26, 2021 in U.S. Appl. No. 16/517,122.
USPTO; Non-Final Office Action dated Feb. 1, 2021 in U.S. Appl. No. 16/563,473.
USPTO; Non-Final Office Action dated May 10, 2021 in U.S. Appl. No. 16/601,593.
USPTO; Non-Final Office Action dated Feb. 24, 2021 in Application No. 16/63 7,134.
USPTO; Notice of Allowance dated Jun. 2, 2021 in U.S. Appl. No. 16/637,134.
USPTO; Notice of Allowance dated Apr. 30, 2021 in U.S. Appl. No. 16/685,787.
USPTO; Non-Final Office Action dated Apr. 5, 2021 in U.S. Appl. No. 16/704,835.
USPTO; Final Office Action dated Feb. 22, 2021 in U.S. Appl. No. 16/713,311.
USPTO; Notice of Allowance dated May 20, 2021 in U.S. Appl. No. 16/752,514.
USPTO; Notice of Allowance dated May 24, 2021 in U.S. Appl. No. 16/765,125.
USPTO; Non-Final Office Action dated Apr. 15, 2021 in U.S. Appl. No. 16/789,138.
USPTO; Notice of Allowance dated May 12, 2021 in U.S. Appl. No. 16/800,114.
USPTO; Non-Final Office Action dated Apr. 5, 2021 in U.S. Appl. No. 16/816,078.
USPTO; Non-Final Office Action dated May 19, 2021 in U.S. Appl. No. 16/828,753.
USPTO; Non-Final Office Action dated May 4, 2021 in U.S. Appl. No. 16/872,045.
USPTO; Non-Final Office Action dated May 3, 2021 in U.S. Appl. No. 16/878,443.
USPTO; Non-Final Office Action dated Dec. 31, 2020 in U.S. Appl. No. 16/924,595.
USPTO; Non-Final Office Action dated May 25, 2021 in U.S. Appl. No. 16/935,280.
USPTO; Non-Final Office Action dated Apr. 14, 2021 in U.S. Appl. No. 17/009,093.
USPTO; Ex Parte Quayle Action dated Apr. 13, 2021 in U.S. Appl. No. 29/679,620.
USPTO; Notice of Allowance dated May 19, 2021 in U.S. Appl. No. 29/702,881.
Aubin et al. “Very low temperature (450° C) selective epitaxial growth of heavily in situ boron-doped SiGe layers” Semiconductor Science and Technology, 30, 10 pages (2015).
Barnscheidt et al. “Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy” Semiconductor Science and Technology, 33, 9 pages (2018).
Belyansky et al. “Low Temperature Borophosphosilicate Glass (BPSG) Process for High Aspect Ratio Gap Fill” www.electrochem.org/dl/ma/201/pdfs/0705.pdf, downloaded May 15, 2021, 1 page.
Cheremisin et al. “UV-laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films” Phys. Status Solidi A, Applications and materials science, 206 (7), pp. 1484-1487 (2009).
Dingemans et al. “Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties” J of the Electrochemical Society, 159(3), H277-H285 (2012).
G02-1152 “Atomic Layer Deposition of Al2O3 with Alcohol Oxidants for Impeding Substrate Oxidation” Abstract. Oct. 16, 2019 (2019).
Imamura et al. “Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices” Template for JJAP Regular Papers, Jan. 2014, pp. 29 (2014).
Kim et al. “A process for topographically selective deposition on 3D nanostructures by ion implantation” ACS Nano, 10, 4, 4451-4458 (2016).
Lee et al. “Ultraviolet light enhancement of Ta2O5 dry etch rates” J. of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 18, pp. 293-295 (2000).
Musschoot et al. “Atomic layer deposition of titanium nitride from TDMAT precursor” Microelectronic Engineering, 86, pp. 72-77 (2009).
Noircler et al. “Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films” CrystEngComm, 22(33), pp. 5464-5472 (2020).
Oyama et al. “Topotactic synthesis of vanadium nitride solid foams” Journal of Materials Research vol. 8. No. 6, pp. 1450-1454 (1993).
Rimoldi et al. “Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework” Applied Materials & Interfaces, 9, pp. 35067-35074 (2017).
Standard Motor Products LX249 Ignition Pick Up, Nov. 11, 2005, Amazon.com, May 10, 2021. URL: https://www.amazon.com/Standard-Motor-Products-LX249-Ignition/dp/B000C7ZTS4/ (2005).
Tao et al. “Improved performance of GeON as charge storage layer in flash memory by optimal annealing” Microelectronics Reliability, vol. 52, pp. 2597-2601 (2012).
Wirths et al. “Low temperature RPCVD epitaxial growth of Si1xGex using Si2H6 and Ge2H6” Solid-State Electronics, 88, pp. 2-9 (2013).
Yanguas-Gil et al. “Modulation of the Growth Per Cycle in Atomic Layer Deposition Using Reversible Surface Functionalization” Chemistry of Materials, 25, pp. 4849-4860 (2013).

Related Publications (1)

	Number	Date	Country
	20210159077 A1	May 2021	US

Provisional Applications (1)

	Number	Date	Country
	62940705	Nov 2019	US

Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface

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