Claims
- 1. A microlithographic structure comprising:
- a) a microlithographic substrate;
- b) applied to the surface of said substrate, an underlayer film comprising a polymeric binder selected from the group consisting of polyarylether sulfones, polyarylether ketones, poly(vinyl naphthalenes), and polycarbonates and a basic species, wherein said basic species has been produced by thermolyzing a precursor of said basic species, wherein the precursor is an azide selected from the group consisting of 4,4'-diazidostilbene, 4,4'-diazidochalcone, 4,4'-diazidobenzophenone, 1,6-diazidopyrene, 4,4'-diazidodiphenylmethane, 3,3'-diazidodiphenyl sulfone, polymeric azides, and precursors comprising one or more phenylsulfonylazide substituents; and
- c) overlaying said underlayer film, a chemically amplified photoresist film, wherein an acid is generated upon exposure to radiation.
- 2. The structure of claim 1 wherein the azide is 4,4'-diazidostilbene.
- 3. The structure of claim 1 wherein the azide is 4,4'-diazidochalcone.
- 4. The structure of claim 1 wherein the azide is 4,4'-diazidobenzophenone.
- 5. The structure of claim 1 wherein the azide is 1,6-diazidopyrene.
- 6. The structure of claim 1 wherein the azide is 4,4'-diazidodiphenylmethane.
- 7. The structure of claim 1 wherein the azide comprises one or more phenylsulfonylazide substituents.
- 8. The structure of claim 1 wherein said basic species is inherently absorbent of ultraviolet radiation, and wherein said underlayer film is an antireflective film.
- 9. The structure of claim 1 wherein said underlayer film is formed from a composition comprising from about 3 to about 10 wt.% of the precursor based on the weight of said polymeric binder.
- 10. The structure of claim 1 wherein said precursor is a polymeric azide.
- 11. The structure of claim 10 wherein the azide has a plurality of N.sub.3 substituents.
Parent Case Info
This application is a continuation of U.S. patent application Ser. No. 08/354,579, filed on Dec. 13, 1994, now U.S. Pat. No. 5,663,036.
US Referenced Citations (12)
Foreign Referenced Citations (1)
Number |
Date |
Country |
4102252-A |
Oct 1991 |
DEX |
Continuations (1)
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Number |
Date |
Country |
Parent |
354579 |
Dec 1994 |
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