Claims
- 1. A multichip integrated circuit module having coplanar dice and substrate comprising:
- a silicon wafer having a first surface, a second surface and a plurality of die openings therethrough;
- a plurality of dice each having a first surface and a second surface, said plurality of dice glass bonded into said plurality of die openings of said silicon wafer so that said first surface of said silicon wafer and said first surfaces of said plurality of dice lie in a common plane; and
- a layer of polyimide film adhered and pressed to said first surfaces of said silicon wafer and said plurality of dice.
- 2. The multichip integrated circuit module of claim 1 further comprising at least one pre-patterned via.
- 3. The multichip circuit module of claim 1 wherein the polyimide film layer, the first surfaces of the plurality of dice and the first surface of the silicon wafer have been patterned and etched in predetermined areas and a plurality of metal interconnect lines processed thereon.
- 4. The multichip integrated circuit module of claim 1 wherein the layer of polyimide film is adhered to the first surfaces of the silicon wafer and the plurality of dice by a polyimide adhesive layer having a thickness in the range of 0.5 to 5.0 microns.
- 5. The multichip integrated circuit module of claim 1 wherein the layer of polyimide film has a thickness in the range of 8.0 to 24.0 microns.
- 6. The multichip integrated circuit module of claim 1 wherein the layer of polyimide film is pressed and cured at a pressure in the range of 1500 to 2000 psi, a temperature in the range of 250 to 350 degrees centigrade and for a time in the range of 6 to 10 minutes.
- 7. A multichip integrated circuit module having coplanar dice and substrate comprising:
- a silicon wafer having a first surface, a second surface and a plurality of die openings therethrough;
- a plurality of dice each having a first surface and a second surface, said plurality of dice glass bonded into said plurality of die openings of said silicon wafer so that said first surface of said silicon wafer and said first surfaces of said plurality of dice lie in a common plane; and
- a layer of polyimide adhered and pressed to said first surfaces of said silicon wafer and said plurality of dice, said polyimide film having a thickness in the range of 8.0 to 24.0 microns and being adhered by a polyimide adhesive layer having a thickness in the range of 0.5 to 5.0 microns.
- 8. The multichip integrated circuit module of claim 7 wherein the layer of polyimide film is pressed and cured at a pressure in the range of 1500 to 2000 psi, a temperature in the range of 250 to 350 degrees centigrade and for a time in the range of 6 to 10 minutes.
Parent Case Info
This is a division, of application Ser. No. 025,687, filed Mar. 13, 1987, now U.S. Pat. No. 4,792,533.
US Referenced Citations (7)
Divisions (1)
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Number |
Date |
Country |
Parent |
25687 |
Mar 1987 |
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