M. Y. Tsai et al., "One-Micron Polycide (WSi2 on Poly-Si) MOSFET Technology", Journal of Electrochemical Society, Solid-State Science and Technology (Oct. 1981), presented May 10-16, 1981, pp. 2207-2214. |
C. Osburn et al., "High Conductivity Diffusions and Gate Regions Using Self-Aligned Silicide Technology", pp. 212-223. |
Huang et al., "A MOS Transistor with Self-Aligned Polysilicon Source-Drain", IEEE Electron Device Letters, vol. EDL-7, No. 5, May 1986, pp. 314-316. |
Neues aus der Technik, Nr. 4 vom 15, Aug. 15, 1983 (German). |
IBM Technical Disclosure Bulletin, vol. 28 No. 1, Jun. 1985, pp. 26-27. |