1. Field of the Invention
The present invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly to a nonplanar fully depleted substrate transistor having a partially or fully wrapped around gate electrode and their methods of fabrication.
2. Discussion of Related Art
In order to increase device performance, silicon on insulator (SOI) transistors have been proposed for the fabrication of modern integrated circuits.
Fully depleted SOI have been proposed as a transistor structure to take advantage of ideal sub-threshold gradients for optimized on current/off current ratios. In order to achieve ideal subthreshold gradients with transistor 100, the thickness of the silicon body 106 must be about ⅓ the size of the gate length (Lg) of the transistor or Tsi=Lg/3. However, as gate lengths scale especially as they approach 30 nm, the need for ever decreasing silicon film thickness (Tsi) makes this approach increasingly impractical. At 30 nanometer gate length, the thickness required of the silicon body is thought to need to be less than 10 nanometers, and around 6 nanometer for a 20 nanometer gate length. The fabrication of thin silicon films with thicknesses of less than 10 nanometers, is considered to be extremely difficult. On one hand, obtaining wafer uniformity on the order of one nanometer is a difficult challenge. On the other hand, to be able to contact these thin films to form raised source/drain regions to decrease junction resistance, becomes almost impossible since the thin silicon layer in the source/drain regions becomes consumed during the gate etch and various cleans following the gate etch and spacer etch leaving insufficient silicon 106 for silicon to grow on.
A double gate (DG) device, such as shown in
Double gate (DG) device 200 essentially has two gates, one on either side of the channel of the device. Because the double gate device 200 has a gate on each side of the channel, thickness (Tsi) of the silicon body can be double that of a single gate device and still obtain a fully depleted transistor operation. That is, with a double gate device 200 a fully depleted transistor can be formed where Tsi=(2×Lg)/3. The most manufacturable form of the double gate (DG) device 200, however, requires that the body 202 patterning be done with photolithography that is 0.7× smaller than that used to pattern the gate length (Lg) of the device. In order to obtain high density integrated circuits, it is generally desirable to have the most aggressive lithography occur with respect to the gate length (Lg) of the gate electrode 208. Although, double gate structures double the thickness of the silicon film (since there now is a gate on either side of the channel) these structures, however, are hideously difficult to fabricate. For example, silicon body 202 requires a silicon body etch which can produce a silicon body 202 with an aspect ratio (height to width) of about 5:1.
The present invention is a novel nonplanar device structure which has a gate electrode which is fully wrapped around the channel region or gate electrode which is almost entirely wrapped around the channel region and their methods of fabrication. In following description numerous specific details are set forth in order to provide a thorough understanding of the present invention. In other instances, well known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention.
The present invention is a novel nonplanar transistor structure. In an embodiment of the present invention, the nonplanar transistor has a gate electrode which is fully wrapped around the channel region. In another embodiment of the present invention, the nonplanar transistor has a gate electrode which is partially or almost entirely wrapped around the channel region of the transistor. The advantage of a transistor having a gate electrode which is fully wrapped around the channel region or almost all around the channel region is that it is easier to deplete the channel region of the device and thereby relax the thickness (Tsi) and width (Wsi) dimensional constraints of the semiconductor body. Additionally, by completely or partially surrounding the channel of the device, the drive current of the device is enhanced by providing two additional corners in the device which increases carrier density.
Examples of a nonplanar transistor 400 in accordance with embodiments of present invention are illustrated in
Nonplanar transistor 400 includes a semiconductor body 408. Semiconductor body 408 provides the source region 430, drain region 432 and channel region 450 of the device. Semiconductor body 408 can be formed of any well-known semiconductor material, such as but not limited to silicon (Si), germanium (Ge), silicon germanium (SixGey), gallium arsenide (GaAs), InSb, GaP, GaSb and carbon nanotubes. Semiconductor body 408 can be formed of any well-known material which can be reversibly altered from an insulating state to a conductive state by applying external electrical controls. Semiconductor body 408 is ideally a single crystalline film when the best electrical performance of transistor 400, is desired. For example, semiconductor body 408 is a single crystalline film when transistor 400 is used in high performance applications, such as in a high density circuit, such as a microprocessor. Semiconductor body 408, however, can be a polycrystalline film when transistor 400 is used in applications requiring less stringent performance, such as in liquid crystal displays. Insulator 406 insulates semiconductor body 408 from monocrystalline silicon substrate 402. In an embodiment of the present invention, semiconductor body 408 is formed from a single crystalline silicon film.
Semiconductor body 408 has a pair of laterally opposite sidewalls 410 and 412 separated by a distance which defines a semiconductor body width (Wsi) 414. Additionally, semiconductor body 408 has a top surface 416 opposite a bottom surface 418 formed on substrate 402. The distance between the top surface 416 and the bottom surface 418 defines a body height (Tsi) 420. In an embodiment of the present invention the body height 420 is substantially equal to the body width (Wsi) 414. In an embodiment of the present invention, the body 408 has a width 414 and height (Tsi) 420 less than 30 nanometers and ideally less than 20 nanometers. In an embodiment of the present invention, the body height 420 is between ½ the body width 414 to 2 times the body width 414.
Nonplanar device 400 has a gate dielectric layer 422. Gate dielectric layer 422 is formed on and around three sides of the channel region 350 of semiconductor body 408 as well as on or subadjacent to at least a portion of the bottom surface 418 of the channel region 450 semiconductor body 408 as shown in
Nonplanar device 400 has a gate electrode 424. Gate electrode 424 is formed on and around gate dielectric layer 422 as shown in
Gate electrode 424 can be formed of any suitable gate electrode material. In an embodiment of the present invention to gate electrode 424 comprises of polycrystalline silicon doped to a concentration density between 1×1019 atoms/cm3-1×1021 atoms/cm3. In an embodiment of the present invention the gate electrode can be a metal gate electrode, such as but not limited to, tungsten, tantalum, titanium, and their nitrides. In an embodiment of the present invention the gate electrode is formed from a material having a work function compatible with the channel material (e.g., 4.0-5.2 eV for Si). It is to be appreciated, the gate electrode 424 need not necessarily be a single material and can be a composite stack of thin films, such as but not limited to a polycrystalline silicon/metal electrode or a metal/polycrystalline silicon electrode.
Nonplanar transistor 400 has a source region 430 and a drain region 432. Source region 430 and drain region 432 are formed in semiconductor body 408 on opposite sides of gate electrode 424 as shown in
The portion of semiconductor body 408 located between source region 430 and drain region 432, defines the channel region 450 of transistor 400. The channel region 450 can also be defined as the area of the semiconductor body 408 surrounded by the gate electrode 424. At times however, the source/drain region may extend slightly beneath the gate electrode through, for example, diffusion to define a channel region slightly smaller than the gate electrode length (Lg). In an embodiment of the present invention channel region 450 is intrinsic or undoped monocrystalline silicon. In an embodiment of the present invention, channel region 450 is doped monocrystalline silicon. When channel region 450 is doped it is typically doped to a conductivity level of between 1×1016 to 1×1019 atoms/cm3. In an embodiment of the present invention, when the channel region is doped it is typically doped to the opposite conductivity type of the source region 430 and the drain region 432. For example, when the source and drain regions are N-type conductivity the channel region 450 would be doped to p type conductivity. Similarly, when the source and drain regions are P type conductivity the channel region would be N-type conductivity. In this manner a nonplanar transistor 400 can be formed into either a NMOS transistor or a PMOS transistor respectively. Channel region 450 can be uniformly doped or can be doped non-uniformly or with differing concentrations to provide particular electrical and performance characteristics. For example, channel regions 450 can include well-known “halo” regions, if desired. When the transistor is turned “ON” current flows between the source region 430 and the drain region through the gated channel region 450 in a direction parallel to the plane of substrate 402.
By providing a gate dielectric and a gate electrode which surrounds the semiconductor body on all sides, the nonplanar transistor can be characterized as having four channels and four gates, one gate (g1) and channel which extends between the source and drain regions on side 412 of semiconductor body 408, a second gate (g2) and channel which extends between the source and drain regions on the top surface 416 of semiconductor body 408, a third gate (g3) and channel which extends between the source and drain regions on the sidewall 310 of semiconductor body 408 and a fourth channel and gate (g4) between the source and drain regions on the bottom surface 418 of semiconductor body 408. The gate “width” (Gw) of transistor 400 is the sum of the widths of the four gates. That is, the gate width of transistor 400 is equal to the height 420 of silicon body 408 at sidewall 410, plus the width of silicon body of 308 at the top surface 416, plus the height 420 of silicon body 408 at sidewall 412 plus the amount of the bottom surface of semiconductor body 408 above gate electrode 424. Larger “width” transistors can be obtained by using multiple devices coupled together (e.g., multiple silicon bodies 408 surrounded by a single gate electrode 424).
As stated above the gate “width” of transistor 400 is equal to the sum of the four gate widths created from semiconductor body 408 of transistor 400. In order to fabricate the transistors with larger gate widths, transistor 400 can include an additional or multiple semiconductor bodies or fingers 408 as shown in
Because the channel region 450 is surrounded on all sides by gate electrode 424 and gate dielectric 422, transistor 400 can be operated in a fully depleted manner wherein when transistor 400 is turned “ON” the channel region 450 fully depletes thereby providing the advantageous electrical characteristics and performance of a fully depleted transistor. That is, when transistor 400 is turned “ON” a depletion region is formed in channel region 450 along with an inversion layer at the surfaces of region 450 (i.e., an inversion layer is formed on the side surfaces 410 and 412 and on top surface 416 and on bottom surface 418 of the semiconductor body). The inversion layer has the same conductivity type as the source and drain regions and forms a conductive channel between the source and drain regions to allow current to flow therebetween. The depletion region depletes free carriers from beneath the inversion layers. The entire channel region 450 except for the inversion layer is depleted of carriers, thus the transistor can be said to be a “fully depleted” transistor. Fully depleted transistors have improved electrical performance characteristics over non-fully depleted or partially depleted transistors. For example, operating transistor 400 in a fully depleted manner, gives transistor 400 an ideal or very steep subthreshold slope. The nonplanar transistor can be fabricated with very steep sub-threshold slope of less than 80 mV/decade, and ideally about 60 mV/decade even when fabricated with semiconductor body thicknesses of less than 30 nm. Additionally, operating transistor 400 in the fully depleted manner, transistor 400 has an improved drain induced barrier (DIBL) lowering effect which provides for better “OFF” state leakage which results in lower leakage and thereby lower power consumption. In an embodiment of the present invention the tri-gate transistor 400 has a DIBL effect of less than 100 mV/V and ideally less than 40 mV/V.
The nonplanar transistor of the present invention can be said to be a nonplanar transistor because the inversion layers of the channel region 450 are formed in both the horizontal and vertical directions in semiconductor body 408. The semiconductor device of the present invention can also be considered a nonplanar device because the electric field from the gate electrode 424 is applied from both horizontal (g2 and g4) and vertical sides (g1 and g3).
A method of fabricating a nonplanar transistor with a partially or fully wrapped around gate electrode in accordance with embodiments of the present invention is illustrated in
Although semiconductor film 608 is ideally a silicon film, in other embodiments it can be other types of semiconductor films, such as but not limited to germanium (Ge), a silicon germanium alloy (SixGey), gallium arsenide (GaAs), InSb, GaP, GaSb, as well as carbon nanotubes. In an embodiment of the present invention, semiconductor film 608 is an intrinsic (i.e., undoped) silicon film. In other embodiments, semiconductor film 608 is doped to a p type or n type conductivity with a concentration level between 1×1016-1×1019 atoms/cm3. Semiconductor film 608 can be insitu doped (i.e., doped while it is deposited) or doped after it is formed on substrate 602 by for example ion-implantation. Doping after formation enables both PMOS and NMOS nonplanar devices to be fabricated easily on the same insulating substrate. The doping level of the semiconductor body at this point determines the doping level of the channel region of the device.
Semiconductor film 608 is formed to a thickness which is approximately equal to the height desired for the subsequently formed semiconductor body or bodies of the fabricated nonplanar transistor. In an embodiment of the present invention, semiconductor film 608 has a thickness or height 609 of less than 30 nanometers and ideally less than 20 nanometers. In an embodiment of the present invention, semiconductor film 608 is formed to the thickness approximately equal to the gate “length” desired of the fabricated nonplanar transistor. In an embodiment of the present invention, semiconductor film 608 is formed thicker than desired gate length of the device. In an embodiment of the present invention, semiconductor film 680 is formed to a thickness which will enable the fabricated nonplanar transistor to be operated in a fully depleted manner for its designed gate length (Lg).
Semiconductor film 608 can be formed on insulating substrate 602 in any well-known method. In one method of forming a silicon on insulator substrate, known as the SIMOX technique, oxygen atoms are implanted at a high dose into a single crystalline silicon substrate and then anneal to form the buried oxide 606 within the substrate. The portion of the single crystalline silicon substrate above the buried oxide becomes the silicon film 608. Another technique currently used to form SOI substrates is an epitaxial silicon film transfer technique which is generally referred to as bonded SOI. In this technique a first silicon wafer has a thin oxide grown on its surface that will later serve as the buried oxide 606 in the SOI structure. Next, a high dose hydrogen implant is made into the first silicon wafer to form a high stress region below the silicon surface of the first wafer. This first wafer is then flipped over and bonded to the surface of a second silicon wafer. The first wafer is then cleaved along the high stress plain created by the hydrogen implant. This results in a SOI structure with a thin silicon layer on top, the buried oxide underneath all on top of the single crystalline silicon substrate. Well-known smoothing techniques, such as HCl smoothing or chemical mechanical polishing (CMP) can be used to smooth the top surface of semiconductor film 608 to its desired thickness.
At this time, if desired, isolation regions (not shown) can be formed into SOI semiconductor film 608 in order to isolate the various transistors to be formed therein from one another. Isolation regions can be formed by etching away portions of the substrate film 608 surrounding a nonplanar transistor, by for example well-known photolithographic and etching techniques, and then back filling the etched regions with an insulating film, such as SiO2.
Next, standard photolithography and etching techniques are used to define a semiconductor body or fin 620 in the semiconductor film 608 for the tri-gate transistor as shown in
Additionally, the photolithography and etching step can be used to form multiple semiconductor bodies or fins, for a single transistor as shown in
The semiconductor film 608 can be patterned into fins and landing pads by well known photolithography and etching techniques which generally include the formation of a photoresist mask by masking, exposing, and developing a blanket deposited photoresist film, and then etching semiconductor film in alignment with the photoresist mask to form one or more silicon bodies or fins 620 and source and drain landing pads 622 and 624 respectively. Semiconductor film 608 is etched until the underlying buried insulating layer 606 is exposed. Well-known semiconductor etching techniques, such as anisotropic plasma etching or reactive ion etching can be used to etch semiconductor film 608 in alignment with the photoresist mask. After semiconductor film 608 is etched to form a semiconductor body or fin 620 (and source/drain landing pads 622 and 624, if desired) the photoresist mask is removed by well-known techniques, such as by chemical stripping and O2 ashing, to produce the substrate shown in
Next, as shown in
Next, a gate dielectric layer 626 is formed on and around each semiconductor body 620. That is, a gate dielectric layer 626 is formed on the top surface 627 of semiconductor body 620 as well as on the laterally opposite sidewalls 628 and 629 of each of the semiconductor bodies 620. When forming a partially wrapped around gate electrode, the gate dielectric 626 layer is formed on the exposed portion 631 of the underside of the semiconductor body 620. When forming a completely wrapped around gate electrode, the gate dielectric layer is formed on the entire bottom surface of the exposed semiconductor body. The gate dielectric can be a deposited dielectric or a grown dielectric. The gate dielectric layer 626 should be formed by a conformal process which enables the formation of the dielectric 626 on the underside of the semiconductor body 620. In an embodiment of the present invention, the gate dielectric layer 626 is a silicon dioxide dielectric film grown with a dry/wet oxidation process. In an embodiment of the present invention, the silicon oxide film is grown to a thickness of between 5-15 Å. In an embodiment of the present invention, the gate dielectric film 626 is a deposited dielectric, such as but not limited to a high dielectric constant film, such as metal oxide dielectric, such as tantalum pentaoxide (Ta2O5), titantium oxide (TiO2), hafnium oxide (HfO2), HfSiOxNy, zirconium oxide (ZrO2) and lanthanum oxide (LaO2) or other high-K dielectrics, such as PZT and BST formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).
Next, as also shown in
Next, as shown in
Next the gate electrode material is etched in alignment with the hard mask 634 to form a gate electrode 636. In an embodiment of the present invention, the gate electrode is first anisotropically etched in alignment with the hard mask to form a pair of laterally opposite sidewall 639 and 641 as shown in
Next, as shown in
Next, source 640 and drain 642 regions for the transistor are formed in semiconductor body 620 on opposite sides of gate electrode 630 as shown in
In embodiments of the present invention, “halo” regions can be formed in silicon body prior to the formation of a source/drain regions or source/drain extension regions. Halo regions are doped regions formed in the channel region 648 of the device and are of the same conductivity but of a slightly higher concentration than the doping of the channel region of the device. Halo regions can be formed by ion-implanting dopants beneath the gate electrode by utilizing large angled ion-implantation techniques.
Additionally, if desired, the substrate shown in
Next, the buried insulating layer 606 is etched away from underneath the semiconductor body 620 to form an opening 705 which undercut the active channel region of the semiconductor body 620 as shown in
Next, a gate dielectric layer 624 is formed on and around the exposed portion (i.e., channel region) of semiconductor body 620 as described above. That is, the gate dielectric layer is formed on the top surface of semiconductor body 620, is formed on the sidewalls 628 and 629 of semiconductor body 620 and is formed beneath or subadjacent to the exposed portions of the underside 631 of the semiconductor body. In the case of a fully wrapped around gate electrode, the gate dielectric layer 624 is formed on the entire underside 631 of the channel region or the semiconductor body. As described above, the gate dielectric layer may be any suitable material and should be formed with a conformal deposition process, such as atomic layer deposition (ALD) or chemical vapor deposition (CVD) to insure sufficient formation of a gate dielectric layer on the underside 631 of semiconductor body 620.
Next, a gate electrode material is blanket deposited over the substrate including on top of dielectric layer 702 and on top of and around the gate dielectric formed on and around semiconductor body 608 and onto insulating layer 608. The gate electrode material is deposited to a thickness sufficient to completely fill openings 705 and 706. The gate electrode material can be any suitable material used to form a gate electrode such as described above. In an embodiment of the present invention, the gate electrode material is a metal film, such as but not limited to tungsten (W), titanium nitride (TiN) and cobalt silicide (CoSi2). The gate electrode material should be formed by a deposition technique, such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) so that a conformal film is formed so that the entire trench opening 706 is filled as well as the undercut regions 705 beneath the semiconductor body 620 and the dielectric mask 702.
Next, a planarization technique is utilized to remove excess gate material from the top of dielectric layer 702 so that a planarized top surface may be formed as shown in
Next, as shown in
The process begins with the same substrate and processing as shown in
Next, if desired, tip or source/drain extensions can be formed by doping the semiconductor body 620 on opposite sides of the sacrificial gate electrode 804 with impurities of the same conductivity type to be used to form a source/drain regions. The tip regions can be formed by any well known technique, such as by ion implantation, which implants dopants 806 into the semiconductor body 620 as shown in
Next, if desired, dielectric sidewall spacers 808 can be formed along opposite sidewalls of the sacrificial gate electrode 804 as shown in
Next, as shown in
Next, if desired, heavy source/drain regions may be formed in the semiconductor body (and additional silicon, if used) on opposites of the gate electrode as well as into the landing pads 622 and 624. Sidewall spacers 808 prevent the underlying previously formed tip regions and the semiconductor body 620 from being doped by the heavy source/drain implant 810. Additionally, as before, the sacrificial gate electrode 804 masks the channel region from being doped during the heavy source/drain formation step.
Additionally, if desired, silicide 812, such as but not limited to cobalt silicide, nickel silicide, and titanium silicide may be formed onto the exposed surfaces of the semiconductor body or onto the additionally added silicon film as shown in
Next, as shown in
Next, as shown in
Next, as shown in
Next, as gate dielectric 820 and a gate electrode 824 are formed in openings 816 and 818 as shown in
Thus, nonplanar transistors with partially or fully wrapped around gate electrodes and their methods of fabrication have been described.
This application is a continuation of U.S. patent application Ser. No. 12/259,464 filed Oct. 28, 2008, which is a divisional of U.S. patent application Ser. No. 10/607,769 filed Jun. 27, 2003, now U.S. Pat. No. 7,456,476 issued Nov. 25, 2008, the entire contents of which are hereby incorporated by reference herein.
Number | Name | Date | Kind |
---|---|---|---|
4231149 | Chapman et al. | Nov 1980 | A |
4487652 | Almgren | Dec 1984 | A |
4711701 | McLevige | Dec 1987 | A |
4818715 | Chao | Apr 1989 | A |
4905063 | Beltram et al. | Feb 1990 | A |
4906589 | Chao | Mar 1990 | A |
4907048 | Huang | Mar 1990 | A |
4994873 | Madan | Feb 1991 | A |
4996574 | Shirasaka | Feb 1991 | A |
5023203 | Choi | Jun 1991 | A |
5120666 | Gotou | Jun 1992 | A |
5124777 | Lee | Jun 1992 | A |
5179037 | Seabaugh | Jan 1993 | A |
5216271 | Takagi et al. | Jun 1993 | A |
5278102 | Horie | Jan 1994 | A |
5308999 | Gotou | May 1994 | A |
5328810 | Lowrey et al. | Jul 1994 | A |
5338959 | Kim et al. | Aug 1994 | A |
5346836 | Manning et al. | Sep 1994 | A |
5346839 | Sundaresan | Sep 1994 | A |
5357119 | Wang et al. | Oct 1994 | A |
5391506 | Tada et al. | Feb 1995 | A |
5398641 | Shih | Mar 1995 | A |
5428237 | Yuzurihara et al. | Jun 1995 | A |
5466621 | Hisamoto et al. | Nov 1995 | A |
5475869 | Gomi et al. | Dec 1995 | A |
5479033 | Baca et al. | Dec 1995 | A |
5482877 | Rhee | Jan 1996 | A |
5514885 | Myrick | May 1996 | A |
5521859 | Ema et al. | May 1996 | A |
5543351 | Hirai et al. | Aug 1996 | A |
5545586 | Koh | Aug 1996 | A |
5554870 | Fitch et al. | Sep 1996 | A |
5563077 | Ha | Oct 1996 | A |
5576227 | Hsu | Nov 1996 | A |
5578513 | Maegawa | Nov 1996 | A |
5595919 | Pan | Jan 1997 | A |
5595941 | Okamoto et al. | Jan 1997 | A |
5652454 | Iwamatsu et al. | Jul 1997 | A |
5658806 | Lin et al. | Aug 1997 | A |
5665203 | Lee et al. | Sep 1997 | A |
5682048 | Shinohara et al. | Oct 1997 | A |
5698869 | Yoshimi et al. | Dec 1997 | A |
5701016 | Burroughes et al. | Dec 1997 | A |
5716879 | Choi et al. | Feb 1998 | A |
5739544 | Yuki et al. | Apr 1998 | A |
5760442 | Shigyo et al. | Jun 1998 | A |
5770513 | Okaniwa | Jun 1998 | A |
5773331 | Solomon et al. | Jun 1998 | A |
5776821 | Haskell et al. | Jul 1998 | A |
5793088 | Choi et al. | Aug 1998 | A |
5804848 | Mukai | Sep 1998 | A |
5811324 | Yang | Sep 1998 | A |
5814545 | Seddon et al. | Sep 1998 | A |
5814895 | Hirayama | Sep 1998 | A |
5821629 | Wen et al. | Oct 1998 | A |
5827769 | Aminzadeh et al. | Oct 1998 | A |
5844278 | Mizuno et al. | Dec 1998 | A |
5856225 | Lee et al. | Jan 1999 | A |
5859456 | Efland et al. | Jan 1999 | A |
5880015 | Hata | Mar 1999 | A |
5888309 | Yu | Mar 1999 | A |
5889304 | Watanabe et al. | Mar 1999 | A |
5899710 | Mukai | May 1999 | A |
5905285 | Garnder et al. | May 1999 | A |
5908313 | Chau et al. | Jun 1999 | A |
5952701 | Bulucea et al. | Sep 1999 | A |
5965914 | Miyamoto | Oct 1999 | A |
5976767 | Li | Nov 1999 | A |
5985726 | Yu et al. | Nov 1999 | A |
6013926 | Oku et al. | Jan 2000 | A |
6018176 | Lim | Jan 2000 | A |
6031249 | Yamazaki et al. | Feb 2000 | A |
6051452 | Shigyo et al. | Apr 2000 | A |
6054355 | Inumiya et al. | Apr 2000 | A |
6063675 | Rodder | May 2000 | A |
6063677 | Rodder et al. | May 2000 | A |
6066869 | Noble et al. | May 2000 | A |
6087208 | Krivokapic et al. | Jul 2000 | A |
6093621 | Tseng | Jul 2000 | A |
6114201 | Wu | Sep 2000 | A |
6114206 | Yu | Sep 2000 | A |
6117741 | Chatterjee et al. | Sep 2000 | A |
6120846 | Hintermaier et al. | Sep 2000 | A |
6144072 | Iwamatsu et al. | Nov 2000 | A |
6150222 | Gardner et al. | Nov 2000 | A |
6153485 | Pey et al. | Nov 2000 | A |
6163053 | Kawashima | Dec 2000 | A |
6165880 | Yaung et al. | Dec 2000 | A |
6174820 | Habermehl et al. | Jan 2001 | B1 |
6190975 | Kubo et al. | Feb 2001 | B1 |
6200865 | Gardner et al. | Mar 2001 | B1 |
6218309 | Miller et al. | Apr 2001 | B1 |
6251729 | Montree et al. | Jun 2001 | B1 |
6251763 | Inumiya et al. | Jun 2001 | B1 |
6252284 | Muller et al. | Jun 2001 | B1 |
6259135 | Hsu et al. | Jul 2001 | B1 |
6261921 | Yen et al. | Jul 2001 | B1 |
6262456 | Yu et al. | Jul 2001 | B1 |
6274503 | Hsieh | Aug 2001 | B1 |
6287924 | Chao et al. | Sep 2001 | B1 |
6294416 | Wu | Sep 2001 | B1 |
6307235 | Forbes et al. | Oct 2001 | B1 |
6310367 | Yagishita et al. | Oct 2001 | B1 |
6317444 | Chakrabarti et al. | Nov 2001 | B1 |
6319807 | Yeh et al. | Nov 2001 | B1 |
6335251 | Miyano et al. | Jan 2002 | B2 |
6358800 | Tseng | Mar 2002 | B1 |
6359311 | Colinge et al. | Mar 2002 | B1 |
6362111 | Laaksonen et al. | Mar 2002 | B1 |
6368923 | Huang | Apr 2002 | B1 |
6376317 | Forbes et al. | Apr 2002 | B1 |
6383882 | Lee et al. | May 2002 | B1 |
6387820 | Sanderfer | May 2002 | B1 |
6391782 | Yu | May 2002 | B1 |
6396108 | Krivokapic et al. | May 2002 | B1 |
6399970 | Kubo et al. | Jun 2002 | B2 |
6403434 | Yu | Jun 2002 | B1 |
6403981 | Yu | Jun 2002 | B1 |
6407442 | Inoue et al. | Jun 2002 | B2 |
6413802 | Hu et al. | Jul 2002 | B1 |
6413877 | Annapragada | Jul 2002 | B1 |
6424015 | Ishibashi et al. | Jul 2002 | B1 |
6437550 | Andoh et al. | Aug 2002 | B2 |
6457890 | Kohlruss et al. | Oct 2002 | B1 |
6458662 | Yu | Oct 2002 | B1 |
6459123 | Enders et al. | Oct 2002 | B1 |
6465290 | Suguro et al. | Oct 2002 | B1 |
6472258 | Adkisson et al. | Oct 2002 | B1 |
6475869 | Yu | Nov 2002 | B1 |
6475890 | Yu | Nov 2002 | B1 |
6479866 | Xiang | Nov 2002 | B1 |
6483146 | Lee et al. | Nov 2002 | B2 |
6483151 | Wakabayashi et al. | Nov 2002 | B2 |
6483156 | Adkisson et al. | Nov 2002 | B1 |
6495403 | Skotnicki et al. | Dec 2002 | B1 |
6498096 | Bruce et al. | Dec 2002 | B2 |
6500767 | Chiou et al. | Dec 2002 | B2 |
6501141 | Leu | Dec 2002 | B1 |
6506692 | Andideh | Jan 2003 | B2 |
6525403 | Inaba et al. | Feb 2003 | B2 |
6526996 | Chang et al. | Mar 2003 | B1 |
6534807 | Mandelman et al. | Mar 2003 | B2 |
6537862 | Song | Mar 2003 | B2 |
6537885 | Kang et al. | Mar 2003 | B1 |
6537901 | Cha et al. | Mar 2003 | B2 |
6541829 | Nishinohara et al. | Apr 2003 | B2 |
6555879 | Krivokapic et al. | Apr 2003 | B1 |
6562665 | Yu | May 2003 | B1 |
6562687 | Deleonibus | May 2003 | B1 |
6566734 | Sugihara et al. | May 2003 | B2 |
6583469 | Fried et al. | Jun 2003 | B1 |
6605498 | Murthy et al. | Aug 2003 | B1 |
6610576 | Nowak | Aug 2003 | B2 |
6611029 | Ahmed et al. | Aug 2003 | B1 |
6630388 | Sekigawa et al. | Oct 2003 | B2 |
6635909 | Clark et al. | Oct 2003 | B2 |
6642090 | Fried et al. | Nov 2003 | B1 |
6642114 | Nakamura | Nov 2003 | B2 |
6645797 | Buynoski et al. | Nov 2003 | B1 |
6645826 | Yamazaki et al. | Nov 2003 | B2 |
6645861 | Cabral et al. | Nov 2003 | B2 |
6656853 | Ito | Dec 2003 | B2 |
6657259 | Fried et al. | Dec 2003 | B2 |
6660598 | Hanafi et al. | Dec 2003 | B2 |
6664160 | Park et al. | Dec 2003 | B2 |
6680240 | Maszara | Jan 2004 | B1 |
6686231 | Ahmed et al. | Feb 2004 | B1 |
6689650 | Gambino et al. | Feb 2004 | B2 |
6693324 | Maegawa et al. | Feb 2004 | B2 |
6696366 | Morey et al. | Feb 2004 | B1 |
6706571 | Yu et al. | Mar 2004 | B1 |
6709982 | Buynoski et al. | Mar 2004 | B1 |
6713396 | Anthony | Mar 2004 | B2 |
6716684 | Krivokapic et al. | Apr 2004 | B1 |
6716686 | Buynoski et al. | Apr 2004 | B1 |
6716690 | Wang et al. | Apr 2004 | B1 |
6730964 | Horiuchi | May 2004 | B2 |
6744103 | Snyder | Jun 2004 | B2 |
6756657 | Zhang et al. | Jun 2004 | B1 |
6762469 | Mocuta et al. | Jul 2004 | B2 |
6764884 | Yu et al. | Jul 2004 | B1 |
6765303 | Krivokapic et al. | Jul 2004 | B1 |
6770516 | Wu et al. | Aug 2004 | B2 |
6774390 | Sugiyama et al. | Aug 2004 | B2 |
6780694 | Doris et al. | Aug 2004 | B2 |
6784071 | Chen et al. | Aug 2004 | B2 |
6784076 | Gonzalez et al. | Aug 2004 | B2 |
6787402 | Yu | Sep 2004 | B1 |
6787406 | Hill et al. | Sep 2004 | B1 |
6787439 | Ahmed et al. | Sep 2004 | B2 |
6787845 | Deleonibus | Sep 2004 | B2 |
6787854 | Yang et al. | Sep 2004 | B1 |
6790733 | Natzle et al. | Sep 2004 | B1 |
6794313 | Chang | Sep 2004 | B1 |
6794718 | Nowak et al. | Sep 2004 | B2 |
6798000 | Luyken et al. | Sep 2004 | B2 |
6800885 | An et al. | Oct 2004 | B1 |
6800910 | Lin et al. | Oct 2004 | B2 |
6803631 | Dakshina-Murthy et al. | Oct 2004 | B2 |
6812075 | Fried et al. | Nov 2004 | B2 |
6812111 | Cheong et al. | Nov 2004 | B2 |
6815277 | Fried et al. | Nov 2004 | B2 |
6821834 | Ando | Nov 2004 | B2 |
6825506 | Chau et al. | Nov 2004 | B2 |
6830998 | Pan et al. | Dec 2004 | B1 |
6831310 | Mathew et al. | Dec 2004 | B1 |
6833588 | Yu et al. | Dec 2004 | B2 |
6835614 | Hanafi et al. | Dec 2004 | B2 |
6835618 | Dakshina-Murthy et al. | Dec 2004 | B1 |
6838322 | Pham et al. | Jan 2005 | B2 |
6844238 | Yeo et al. | Jan 2005 | B2 |
6849556 | Takahashi | Feb 2005 | B2 |
6849884 | Clark et al. | Feb 2005 | B2 |
6852559 | Kwak et al. | Feb 2005 | B2 |
6855606 | Chen et al. | Feb 2005 | B2 |
6855990 | Yeo et al. | Feb 2005 | B2 |
6858478 | Chau et al. | Feb 2005 | B2 |
6864540 | Divakaruni et al. | Mar 2005 | B1 |
6867433 | Yeo et al. | Mar 2005 | B2 |
6867460 | Anderson et al. | Mar 2005 | B1 |
6869868 | Chiu et al. | Mar 2005 | B2 |
6869898 | Inaki et al. | Mar 2005 | B2 |
6870226 | Maeda et al. | Mar 2005 | B2 |
6884154 | Mizushima et al. | Apr 2005 | B2 |
6885055 | Lee | Apr 2005 | B2 |
6890811 | Hou et al. | May 2005 | B2 |
6891234 | Connelly et al. | May 2005 | B1 |
6897527 | Dakshina-Murthy et al. | May 2005 | B2 |
6902947 | Chinn et al. | Jun 2005 | B2 |
6902962 | Yeo et al. | Jun 2005 | B2 |
6909147 | Aller et al. | Jun 2005 | B2 |
6909151 | Hareland et al. | Jun 2005 | B2 |
6919238 | Bohr | Jul 2005 | B2 |
6921691 | Li et al. | Jul 2005 | B1 |
6921702 | Ahn et al. | Jul 2005 | B2 |
6921963 | Krivokapic et al. | Jul 2005 | B2 |
6921982 | Joshi et al. | Jul 2005 | B2 |
6924190 | Dennison | Aug 2005 | B2 |
6955961 | Chung | Oct 2005 | B1 |
6960517 | Rios et al. | Nov 2005 | B2 |
6967351 | Fried et al. | Nov 2005 | B2 |
6969878 | Coronel et al. | Nov 2005 | B2 |
6970373 | Datta et al. | Nov 2005 | B2 |
6974738 | Hareland | Dec 2005 | B2 |
6975014 | Krivokapic et al. | Dec 2005 | B1 |
6977415 | Matsuo | Dec 2005 | B2 |
6998301 | Yu et al. | Feb 2006 | B1 |
6998318 | Park | Feb 2006 | B2 |
7013447 | Mathew et al. | Mar 2006 | B2 |
7018551 | Beintner et al. | Mar 2006 | B2 |
7045401 | Lee et al. | May 2006 | B2 |
7045407 | Keating et al. | May 2006 | B2 |
7045441 | Chang et al. | May 2006 | B2 |
7056794 | Ku et al. | Jun 2006 | B2 |
7060539 | Chidambarrao et al. | Jun 2006 | B2 |
7061055 | Sekigawa et al. | Jun 2006 | B2 |
7071064 | Doyle et al. | Jul 2006 | B2 |
7074623 | Lochtefeld et al. | Jul 2006 | B2 |
7074656 | Yeo et al. | Jul 2006 | B2 |
7074662 | Lee et al. | Jul 2006 | B2 |
7084018 | Ahmed et al. | Aug 2006 | B1 |
7105390 | Brask et al. | Sep 2006 | B2 |
7105891 | Visokay et al. | Sep 2006 | B2 |
7105894 | Yeo et al. | Sep 2006 | B2 |
7105934 | Anderson et al. | Sep 2006 | B2 |
7112478 | Grupp et al. | Sep 2006 | B2 |
7115945 | Lee et al. | Oct 2006 | B2 |
7119402 | Kinoshita et al. | Oct 2006 | B2 |
7122463 | Ohuchi | Oct 2006 | B2 |
7132360 | Schaeffer et al. | Nov 2006 | B2 |
7138320 | Van Bentum et al. | Nov 2006 | B2 |
7141480 | Adam et al. | Nov 2006 | B2 |
7141856 | Lee et al. | Nov 2006 | B2 |
7154118 | Lindert | Dec 2006 | B2 |
7163851 | Adadeer et al. | Jan 2007 | B2 |
7163898 | Mariani et al. | Jan 2007 | B2 |
7172943 | Yeo et al. | Feb 2007 | B2 |
7183137 | Lee et al. | Feb 2007 | B2 |
7187043 | Arai et al. | Mar 2007 | B2 |
7214991 | Yeo et al. | May 2007 | B2 |
7238564 | Ko et al. | Jul 2007 | B2 |
7241653 | Hareland et al. | Jul 2007 | B2 |
7247547 | Zhu et al. | Jul 2007 | B2 |
7247578 | Brask | Jul 2007 | B2 |
7250367 | Vaartstra et al. | Jul 2007 | B2 |
7250645 | Wang et al. | Jul 2007 | B1 |
7268024 | Yeo et al. | Sep 2007 | B2 |
7291886 | Doris et al. | Nov 2007 | B2 |
7297600 | Oh et al. | Nov 2007 | B2 |
7304336 | Cheng et al. | Dec 2007 | B2 |
7323710 | Kim et al. | Jan 2008 | B2 |
7329913 | Brask et al. | Feb 2008 | B2 |
7339241 | Orlowski et al. | Mar 2008 | B2 |
7348284 | Doyle et al. | Mar 2008 | B2 |
7348642 | Nowak | Mar 2008 | B2 |
7354817 | Watanabe et al. | Apr 2008 | B2 |
7358121 | Chau et al. | Apr 2008 | B2 |
7396730 | Li | Jul 2008 | B2 |
7452778 | Chen et al. | Nov 2008 | B2 |
7456471 | Anderson et al. | Nov 2008 | B2 |
7456476 | Hareland et al. | Nov 2008 | B2 |
7479421 | Kavalieros et al. | Jan 2009 | B2 |
7585734 | Kang et al. | Sep 2009 | B2 |
7612416 | Takeuchi et al. | Nov 2009 | B2 |
7655989 | Zhu et al. | Feb 2010 | B2 |
7701018 | Yamagami et al. | Apr 2010 | B2 |
20010019886 | Bruce et al. | Sep 2001 | A1 |
20010026985 | Kim et al. | Oct 2001 | A1 |
20010040907 | Chakrabarti | Nov 2001 | A1 |
20020011612 | Hieda | Jan 2002 | A1 |
20020036290 | Inaba et al. | Mar 2002 | A1 |
20020037619 | Sugihara et al. | Mar 2002 | A1 |
20020048918 | Grider et al. | Apr 2002 | A1 |
20020058374 | Kim et al. | May 2002 | A1 |
20020074614 | Furuta et al. | Jun 2002 | A1 |
20020081794 | Ito | Jun 2002 | A1 |
20020096724 | Liang et al. | Jul 2002 | A1 |
20020142529 | Matsuda et al. | Oct 2002 | A1 |
20020149031 | Kim et al. | Oct 2002 | A1 |
20020160553 | Yamanaka et al. | Oct 2002 | A1 |
20020166838 | Nagarajan | Nov 2002 | A1 |
20020167007 | Yamazaki et al. | Nov 2002 | A1 |
20020177263 | Hanafi et al. | Nov 2002 | A1 |
20020177282 | Song | Nov 2002 | A1 |
20030036290 | Hsieh et al. | Feb 2003 | A1 |
20030042542 | Maegawa et al. | Mar 2003 | A1 |
20030057477 | Hergenrother et al. | Mar 2003 | A1 |
20030057486 | Gambino et al. | Mar 2003 | A1 |
20030067017 | Ieong et al. | Apr 2003 | A1 |
20030085194 | Hopkins, Jr. | May 2003 | A1 |
20030098479 | Murthy et al. | May 2003 | A1 |
20030098488 | O'Keeffe et al. | May 2003 | A1 |
20030102497 | Fried et al. | Jun 2003 | A1 |
20030102518 | Fried et al. | Jun 2003 | A1 |
20030111686 | Nowak | Jun 2003 | A1 |
20030122186 | Sekigawa et al. | Jul 2003 | A1 |
20030143791 | Cheong et al. | Jul 2003 | A1 |
20030151077 | Mathew et al. | Aug 2003 | A1 |
20030174534 | Clark et al. | Sep 2003 | A1 |
20030190766 | Gonzalez et al. | Oct 2003 | A1 |
20030201458 | Clark et al. | Oct 2003 | A1 |
20030203636 | Hieda | Oct 2003 | A1 |
20030227036 | Sugiyama et al. | Dec 2003 | A1 |
20040016968 | Coronel et al. | Jan 2004 | A1 |
20040029345 | Deleonibus et al. | Feb 2004 | A1 |
20040029393 | Ying et al. | Feb 2004 | A1 |
20040031979 | Lochtefeld et al. | Feb 2004 | A1 |
20040033639 | Chinn et al. | Feb 2004 | A1 |
20040036118 | Abadeer et al. | Feb 2004 | A1 |
20040036126 | Chau et al. | Feb 2004 | A1 |
20040036127 | Chau et al. | Feb 2004 | A1 |
20040038436 | Mori et al. | Feb 2004 | A1 |
20040038533 | Liang | Feb 2004 | A1 |
20040061178 | Lin et al. | Apr 2004 | A1 |
20040063286 | Kim et al. | Apr 2004 | A1 |
20040070020 | Fujiwara et al. | Apr 2004 | A1 |
20040075149 | Fitzgerald et al. | Apr 2004 | A1 |
20040082125 | Hou et al. | Apr 2004 | A1 |
20040092062 | Ahmed et al. | May 2004 | A1 |
20040092067 | Hanafi et al. | May 2004 | A1 |
20040094807 | Chau et al. | May 2004 | A1 |
20040099903 | Yeo et al. | May 2004 | A1 |
20040099966 | Chau et al. | May 2004 | A1 |
20040108523 | Chen et al. | Jun 2004 | A1 |
20040108558 | Kwak et al. | Jun 2004 | A1 |
20040110097 | Ahmed et al. | Jun 2004 | A1 |
20040110331 | Yeo et al. | Jun 2004 | A1 |
20040113181 | Wicker | Jun 2004 | A1 |
20040119100 | Nowak et al. | Jun 2004 | A1 |
20040124492 | Matsuo | Jul 2004 | A1 |
20040126975 | Ahmed et al. | Jul 2004 | A1 |
20040132236 | Doris | Jul 2004 | A1 |
20040145000 | An et al. | Jul 2004 | A1 |
20040145019 | Dakshina-Murthy et al. | Jul 2004 | A1 |
20040166642 | Chen et al. | Aug 2004 | A1 |
20040169221 | Ko et al. | Sep 2004 | A1 |
20040169269 | Yeo et al. | Sep 2004 | A1 |
20040180491 | Arai et al. | Sep 2004 | A1 |
20040191980 | Rios et al. | Sep 2004 | A1 |
20040195624 | Liu et al. | Oct 2004 | A1 |
20040198003 | Yeo et al. | Oct 2004 | A1 |
20040203254 | Conley et al. | Oct 2004 | A1 |
20040209463 | Kim et al. | Oct 2004 | A1 |
20040217420 | Yeo et al. | Nov 2004 | A1 |
20040219722 | Pham et al. | Nov 2004 | A1 |
20040219780 | Ohuchi | Nov 2004 | A1 |
20040222473 | Risaki | Nov 2004 | A1 |
20040227187 | Cheng et al. | Nov 2004 | A1 |
20040238887 | Nihey | Dec 2004 | A1 |
20040238915 | Chen et al. | Dec 2004 | A1 |
20040256647 | Lee et al. | Dec 2004 | A1 |
20040262683 | Bohr et al. | Dec 2004 | A1 |
20040262699 | Rios et al. | Dec 2004 | A1 |
20040266076 | Doris et al. | Dec 2004 | A1 |
20050019993 | Lee et al. | Jan 2005 | A1 |
20050020020 | Collaert et al. | Jan 2005 | A1 |
20050023633 | Yeo et al. | Feb 2005 | A1 |
20050035415 | Yeo et al. | Feb 2005 | A1 |
20050040444 | Cohen | Feb 2005 | A1 |
20050059214 | Cheng et al. | Mar 2005 | A1 |
20050073060 | Datta et al. | Apr 2005 | A1 |
20050093028 | Chambers | May 2005 | A1 |
20050093067 | Yeo et al. | May 2005 | A1 |
20050093075 | Bentum et al. | May 2005 | A1 |
20050093154 | Kottantharayil et al. | May 2005 | A1 |
20050104055 | Kwak et al. | May 2005 | A1 |
20050110082 | Cheng et al. | May 2005 | A1 |
20050116289 | Boyd et al. | Jun 2005 | A1 |
20050118790 | Lee et al. | Jun 2005 | A1 |
20050127362 | Zhang et al. | Jun 2005 | A1 |
20050127632 | Gehret | Jun 2005 | A1 |
20050133829 | Kunii et al. | Jun 2005 | A1 |
20050133866 | Chau et al. | Jun 2005 | A1 |
20050136584 | Boyanov et al. | Jun 2005 | A1 |
20050139860 | Snyder et al. | Jun 2005 | A1 |
20050145894 | Chau et al. | Jul 2005 | A1 |
20050145941 | Bedell et al. | Jul 2005 | A1 |
20050145944 | Murthy et al. | Jul 2005 | A1 |
20050148131 | Brask | Jul 2005 | A1 |
20050148137 | Brask et al. | Jul 2005 | A1 |
20050153494 | Ku et al. | Jul 2005 | A1 |
20050156171 | Brask et al. | Jul 2005 | A1 |
20050156202 | Rhee et al. | Jul 2005 | A1 |
20050156227 | Jeng | Jul 2005 | A1 |
20050161739 | Anderson et al. | Jul 2005 | A1 |
20050162928 | Rosmeulen | Jul 2005 | A1 |
20050167766 | Yagishita | Aug 2005 | A1 |
20050170593 | Kang et al. | Aug 2005 | A1 |
20050184316 | Kim | Aug 2005 | A1 |
20050189583 | Kim et al. | Sep 2005 | A1 |
20050199919 | Liu | Sep 2005 | A1 |
20050202604 | Cheng et al. | Sep 2005 | A1 |
20050215014 | Ahn et al. | Sep 2005 | A1 |
20050215022 | Adam et al. | Sep 2005 | A1 |
20050224797 | Ko et al. | Oct 2005 | A1 |
20050224800 | Lindert et al. | Oct 2005 | A1 |
20050227498 | Furukawa et al. | Oct 2005 | A1 |
20050230763 | Huang et al. | Oct 2005 | A1 |
20050233156 | Senzaki | Oct 2005 | A1 |
20050239252 | Ahn et al. | Oct 2005 | A1 |
20050255642 | Liu et al. | Nov 2005 | A1 |
20050266645 | Park | Dec 2005 | A1 |
20050272192 | Oh et al. | Dec 2005 | A1 |
20050277294 | Schaefer et al. | Dec 2005 | A1 |
20050280121 | Doris et al. | Dec 2005 | A1 |
20060014338 | Doris et al. | Jan 2006 | A1 |
20060040054 | Pearlstein et al. | Feb 2006 | A1 |
20060043500 | Chen et al. | Mar 2006 | A1 |
20060046521 | Vaartstra et al. | Mar 2006 | A1 |
20060063469 | Talieh et al. | Mar 2006 | A1 |
20060068591 | Radosavljevic et al. | Mar 2006 | A1 |
20060071299 | Doyle et al. | Apr 2006 | A1 |
20060086977 | Shah et al. | Apr 2006 | A1 |
20060154478 | Hsu et al. | Jul 2006 | A1 |
20060170066 | Mathew et al. | Aug 2006 | A1 |
20060172479 | Furukawa et al. | Aug 2006 | A1 |
20060172480 | Wang et al. | Aug 2006 | A1 |
20060172497 | Hareland et al. | Aug 2006 | A1 |
20060180859 | Radosavljevic et al. | Aug 2006 | A1 |
20060202270 | Son et al. | Sep 2006 | A1 |
20060204898 | Gutsche et al. | Sep 2006 | A1 |
20060205164 | Ko et al. | Sep 2006 | A1 |
20060211184 | Boyd et al. | Sep 2006 | A1 |
20060220131 | Kinoshita et al. | Oct 2006 | A1 |
20060227595 | Chuang et al. | Oct 2006 | A1 |
20060240622 | Lee et al. | Oct 2006 | A1 |
20060244066 | Yeo et al. | Nov 2006 | A1 |
20060263699 | Abatchev et al. | Nov 2006 | A1 |
20060281325 | Chou et al. | Dec 2006 | A1 |
20070001219 | Radosavljevic et al. | Jan 2007 | A1 |
20070023795 | Nagano et al. | Feb 2007 | A1 |
20070029624 | Nowak | Feb 2007 | A1 |
20070045735 | Orlowski et al. | Mar 2007 | A1 |
20070045748 | Booth, Jr. et al. | Mar 2007 | A1 |
20070048930 | Figura et al. | Mar 2007 | A1 |
20070052041 | Sorada et al. | Mar 2007 | A1 |
20070093010 | Mathew et al. | Apr 2007 | A1 |
20070108514 | Inoue et al. | May 2007 | A1 |
20070187682 | Takeuchi et al. | Aug 2007 | A1 |
20070241414 | Narihiro | Oct 2007 | A1 |
20070259501 | Xiong et al. | Nov 2007 | A1 |
20070262389 | Chau et al. | Nov 2007 | A1 |
20080017890 | Yuan et al. | Jan 2008 | A1 |
20080017934 | Kim et al. | Jan 2008 | A1 |
20080111163 | Russ et al. | May 2008 | A1 |
20080116515 | Gossner et al. | May 2008 | A1 |
20080128796 | Zhu et al. | Jun 2008 | A1 |
20080128797 | Dyer et al. | Jun 2008 | A1 |
20080212392 | Bauer | Sep 2008 | A1 |
20080237655 | Nakabayashi et al. | Oct 2008 | A1 |
20080258207 | Radosavljevic et al. | Oct 2008 | A1 |
20090061572 | Hareland et al. | Mar 2009 | A1 |
20090099181 | Wurster et al. | Apr 2009 | A1 |
20100200923 | Chen et al. | Aug 2010 | A1 |
Number | Date | Country |
---|---|---|
10203998 | Aug 2003 | DE |
0510667 | Oct 1992 | EP |
0623963 | May 1994 | EP |
1091413 | Apr 2001 | EP |
1202335 | May 2002 | EP |
1566844 | Aug 2005 | EP |
2156149 | Oct 1985 | GB |
56073454 | Jun 1981 | JP |
59145538 | Aug 1984 | JP |
2303048 | Dec 1990 | JP |
06005856 | Jan 1994 | JP |
6151387 | May 1994 | JP |
406177089 | Jun 1994 | JP |
06224440 | Aug 1994 | JP |
9162301 | Jun 1997 | JP |
20037842 | Feb 2000 | JP |
2000037842 | Feb 2000 | JP |
2001189453 | Jul 2001 | JP |
2001338987 | Dec 2001 | JP |
2002298051 | Oct 2002 | JP |
2003298051 | Oct 2003 | JP |
200414538 | Aug 1992 | TW |
200518310 | Nov 1992 | TW |
516232 | Jan 2003 | TW |
561530 | Jan 2003 | TW |
548799 | Aug 2003 | TW |
200402872 | Feb 2004 | TW |
200405408 | Apr 2004 | TW |
200417034 | Sep 2004 | TW |
WO 0243151 | May 2002 | WO |
WO 02095814 | Nov 2002 | WO |
WO 03003442 | Jan 2003 | WO |
WO 2004059726 | Jul 2004 | WO |
WO 2005036651 | Apr 2005 | WO |
Number | Date | Country | |
---|---|---|---|
20110020987 A1 | Jan 2011 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 10607769 | Jun 2003 | US |
Child | 12259464 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 12259464 | Oct 2008 | US |
Child | 12893753 | US |