The present disclosure is in the field of thin-film deposition.
Sputter deposition is a technique used in manufacturing films and coatings in many industry sectors. Conventional sputtering uses the “on-axis” geometry, i.e., the substrate directly faces the sputter target. Due to the energetic bombardment of sputtered atoms, “on-axis” sputtering has been regarded as a “messy” process which may not be used to grow high quality single crystalline films and may not compete with techniques such as molecular-beam epitaxy (MBE), pulsed laser deposition (PLD), and chemical vapor deposition (CVD) for that purpose.
An off-axis geometry version of sputter deposition has been used before at high pressure, e.g., 200 mTorr. However, high pressure sputtering typically results in poor film characteristics. For example, the stoichiometry of the deposited films can be significantly off from that of the target and are relatively poor quality films.
Therefore, what are needed are devices, systems and methods that overcome challenges in the present art, some of which are described above.
Various aspects of this disclosure relate to systems and methods for growing single crystalline films of a broad range of complex materials with high crystalline quality by off-axis sputtering deposition. These materials can include binary, ternary, quaternary and more complex oxides, and intermetallics with simple or complex crystal structures. The disclosed systems and methods can be regarded as a broadly applicable for the single crystal film growth of many other materials with simple or complex structures having magnetic, electronic, dielectric, ferroelectric/piezoelectric, and optical applications. In some implementations, the synthesis of sputtering targets for growth of high quality single-crystalline films is described.
In an aspect of this disclosure, a method for thin-film deposition of a material is disclosed. The method can include: depositing, via sputtering deposition, at least one film of the material, where the sputtering deposition uses at least one sputtering target, and where the sputtering target can comprise at least one nonvolatile material. The sputtering deposition can include a sputtering target that is off-axis from (i.e., not directly facing) a substrate for material growth. Moreover, growth parameters associated with the sputtering deposition can be optimized for the sputtering deposition of the material with a high quality growth of the material. The sputtering target can include at least one pressed powder of at least one constituent material.
In some implementations, the deposited material can comprise one or more metals. The material can include intermetallic compounds. The intermetallic compounds can comprise binary intermetallic compounds. The intermetallic compounds can include at least one of ternary, quaternary, and more complex intermetallic compounds. The at least one of ternary, quaternary, and more complex intermetallic compounds can include Heusler compounds such as Co2FeSi, Co2FeAl, Co2FeAl0.5Si0.5. The deposited material can also include one or more oxides. The oxides can include simple oxides. The oxides can include complex oxides. The complex oxides can include single perovskite oxides. The complex oxides can include double perovskite oxides. The complex oxides can include spinel oxides. The complex oxides can include Garnet oxides. The simple oxides can comprise the AOx compounds (e.g., NiO). The single perovskite oxides can comprise the ABO3 compounds (e.g., SrTiO3). The double perovskite oxides can include the A2BB′O6 compounds (e.g., Sr2FeMoO6 and Sr2CrReO6). The spinel oxides can include the AB2O4 compounds (e.g., MgAl2O4). The Garnet oxides can include the A3B5O12 compounds (e.g., Y3Fe5O12).
In other implementations, the growth parameters can include one or more of at least one sputtering gas, a total pressure of the at least one sputtering gas, an oxygen percentage in the at least one sputtering gas for oxide growth, a substrate location, a substrate temperature, a sputtering power source, and a deposition rate.
The at least one sputtering gas can include at least one inert gas (e.g., argon) and possibly more gases (e.g., oxygen for oxide growth or nitrogen, ammonia for nitride growth). The total pressure of the at least one sputtering gas includes a value from about 5 mTorr to about 15 mTorr, inclusive, depending on the at least one constituent material, in order to obtain the high quality growth of the material. The total pressure of the at least one sputtering gas can have a value from about 1 mTorr to about 30 mTorr, inclusive, in order to obtain the sufficient quality growth of the material.
The oxygen percentage in the at least one sputtering gas for oxide growth can include a value from about 0 percent oxygen in argon to about 5 percent oxygen in argon, inclusive, and is dependent on the reduction-oxidation chemistry of the at least one constituent material, in order to obtain the high quality growth of the material. The oxygen percentage in the at least one sputtering gas for oxide growth can include a value from about 0 percent oxygen in argon to about 30 percent oxygen in argon, inclusive, and can be dependent on the reduction-oxidation chemistry of the constituent materials, in order to obtain the sufficient quality growth of the deposited material.
The substrate location comprises an off-axis angle value from about 45 degrees to about 70 degrees, inclusive, with respect to a target normal direction, and moreover, can be located a distance of about 2 inch to about 5 inch, inclusive, from the target for at least one approximately 2 inch-diameter target, in order to obtain the high quality growth of the material. The substrate location can include an off-axis angle value from about 30 degrees to about 80 degrees, inclusive, with respect to a target normal direction, and moreover, can be located a distance of about 1.5 inch to about 8 inch, inclusive, from the target for at least one approximately 2 inch-diameter target, in order to obtain the sufficient quality growth of the material.
The substrate temperature can include a value from about 200 degrees centigrade to about 850 degrees centigrade, inclusive, and can be dependent on one or more thermal properties of the at least one constituent material, in order to obtain the high quality growth of the material. The substrate temperature can include a value from about 100 degrees centigrade to about 1000 degrees centigrade, inclusive, and can be dependent on one or more thermal properties of the constituent materials, in order to obtain the sufficient quality growth of the material.
The sputtering power source can comprise a direct current (DC) power source for conducting targets and a radio-frequency (RF) power source for insulating and conducting targets.
The deposition rate can comprise a value from about 5 nanometers per hour to about 120 nanometers per hour, inclusive, and is a function of the at least one constituent material, in order to obtain the high quality growth of the material. The deposition rate can comprise a value from about 3 nanometers per hour to about 1000 nanometers per hour, inclusive, in order to obtain the sufficient quality growth of the material.
The substrate temperature can include a value from about 300 degrees centigrade to about 500 degrees centigrade, inclusive, in order to obtain the material including metals and metal-alloys. The substrate temperature can include a value from about 200 degrees centigrade to about 500 degrees centigrade, inclusive, for obtaining the material comprising binary intermetallic compounds. The substrate temperature comprises a value from about 400 degrees centigrade to about 700 degrees centigrade, inclusive, for obtaining the material comprising complex intermetallic compounds. The substrate temperature can include a value from about 400 degrees centigrade to about 600 degrees centigrade, inclusive, for obtaining the material comprising simple binary oxides. The substrate temperature can include a value from about 500 degrees centigrade to about 850 degrees centigrade, inclusive, for obtaining the material comprising complex oxides.
The at least one pressed powder of the sputtering target can include at least one sub-micron fine powder of at least one constituent material. The at least one pressed powder can be compressed in order to form the at least one sputtering target. The at least one pressed powder can be compressed using at least one die. The at least one die can be circular, rectangular, polygonal, cylindrical, U-shape, ring-shape, or any other shape used for sputtering deposition. A supporting cup can be used to hold the at least one sputtering target together, and can be made from at least one nonmagnetic material. The at least one sputtering target can include at least one circular sputtering target having an about 2 inch diameter and a thickness up to and including about 0.25 inch. Moreover, the at least one sputtering target having an about 2 inch diameter, and the pressure for compressing the pressed powders in order to form the at least one sputtering target can range from about 1 metric ton to about 20 metric tons, inclusive, and can be dependent on the at least one constituent material.
The deposited material can be characterized by crystallography. The crystallography can comprise X-ray diffraction (XRD). The XRD comprises one or more of a 8-28 or a 2θ-ω scan. The XRD technique comprises Laue oscillation peak analysis.
In another aspect of the disclosure, a system for thin-film deposition of a material is disclosed. The system can include a sputtering deposition tool for depositing at least one film of the material. The sputtering deposition tool can use at least one sputtering target. The material can include at least one nonvolatile single crystalline film. The sputtering deposition tool can include the at least one sputtering target which is off-axis from a substrate for material growth. Growth parameters associated with the sputtering deposition tool can be optimized for a sputtering deposition of the material with at least one of a high quality growth and a sufficient quality growth of the material. The at least one sputtering target can include at least one pressed powder of at least one constituent material.
In some implementations, the deposited material can comprise one or more metals. The material can include intermetallic compounds. The intermetallic compounds can comprise binary intermetallic compounds. The intermetallic compounds can include at least one of ternary, quaternary, and more complex intermetallic compounds. The at least one of ternary, quaternary, and more complex intermetallic compounds can include Heusler compounds such as Co2FeSi, Co2FeAl, Co2FeAl0.5Si0.5. The deposited material can also include one or more oxides. The oxides can include simple oxides. The oxides can include complex oxides. The complex oxides can include single perovskite oxides. The complex oxides can include double perovskite oxides. The complex oxides can include spinel oxides. The complex oxides can include Garnet oxides. The simple oxides can comprise the AOx compounds (e.g., NiO). The single perovskite oxides can comprise the ABO3 compounds (e.g., SrTiO3). The double perovskite oxides can include the A2BB′O6 compounds (e.g., Sr2FeMoO6 and Sr2CrReO6). The spinel oxides can include the AB2O4 compounds (e.g., MgAl2O4). The Garnet oxides can include the A3B5O12 compounds (e.g., Y3Fe5O12).
In other implementations, the growth parameters can include one or more of at least one sputtering gas, a total pressure of the at least one sputtering gas, an oxygen percentage in the at least one sputtering gas for oxide growth, a substrate location, a substrate temperature, a sputtering power source, and a deposition rate.
The at least one sputtering gas can include at least one inert gas (e.g., argon) and possibly more gases (e.g., oxygen for oxide growth or nitrogen, ammonia for nitride growth). The total pressure of the at least one sputtering gas include a value from about 5 mTorr to about 15 mTorr, inclusive, depending on the at least one constituent material, in order to obtain the high quality growth of the material. The total pressure of the at least one sputtering gas can have a value from about 1 mTorr to about 30 mTorr, inclusive, in order to obtain the sufficient quality growth of the material.
The oxygen percentage in the at least one sputtering gas for oxide growth can include a value from about 0 percent oxygen in argon to about 5 percent oxygen in argon, inclusive, and is dependent on the reduction-oxidation chemistry of the at least one constituent material, in order to obtain the high quality growth of the material. The oxygen percentage in the at least one sputtering gas for oxide growth can include a value from about 0 percent oxygen in argon to about 30 percent oxygen in argon, inclusive, and can be dependent on the reduction-oxidation chemistry of the constituent materials, in order to obtain the sufficient quality growth of the material.
The substrate location comprises an off-axis angle value from about 45 degrees to about 70 degrees, inclusive, with respect to a target normal direction, and moreover, can be located a distance of about 2 inch to about 5 inch, inclusive, from the target for at least one approximately 2 inch-diameter target, in order to obtain the high quality growth of the material. The substrate location can include an off-axis angle value from about 30 degrees to about 80 degrees, inclusive, with respect to a target normal direction, and moreover, can be located a distance of about 1.5 inch to about 8 inch, inclusive, from the target for at least one approximately 2 inch-diameter target, in order to obtain the sufficient quality growth of the material.
The substrate temperature can include a value from about 200 degrees centigrade to about 850 degrees centigrade, inclusive, and can be dependent on one or more thermal properties of the at least one constituent material, in order to obtain the high quality growth of the material. The substrate temperature can include a value from about 100 degrees centigrade to about 1000 degrees centigrade, inclusive, and can be dependent on one or more thermal properties of the constituent materials, in order to obtain the sufficient quality growth of the material.
The sputtering power source can comprise a direct current (DC) power source for conducting targets and a radio-frequency (RF) power source for insulating targets.
The deposition rate can comprise a value from about 5 nanometers per hour to about 120 nanometers per hour, inclusive, and is a function of the at least one constituent material, in order to obtain the sufficient quality growth of the material. The deposition rate can comprise a value from about 3 nanometers per hour to about 1000 nanometers per hour, inclusive, in order to obtain the sufficient quality growth of the material.
The substrate temperature can include a value from about 300 degrees centigrade to about 500 degrees centigrade, inclusive, in order to obtain the material including metals and metal-alloys. The substrate temperature can include a value from about 200 degrees centigrade to about 500 degrees centigrade, inclusive, for obtaining the material comprising binary intermetallic compounds. The substrate temperature comprises a value from about 400 degrees centigrade to about 700 degrees centigrade, inclusive, for obtaining the material comprising complex intermetallic compounds. The substrate temperature can include a value from about 400 degrees centigrade to about 600 degrees centigrade, inclusive, for obtaining the material comprising simple binary oxides. The substrate temperature can include a value from about 500 degrees centigrade to about 850 degrees centigrade, inclusive, for obtaining the material comprising complex oxides.
The at least one pressed powder of the sputtering target can include at least one sub-micron fine powder of at least one constituent material. The at least one pressed powder can be compressed in order to form the at least one sputtering target. The at least one pressed powder can be compressed using at least one die. The at least one die can be circular, rectangular, polygonal, cylindrical, U-shape, ring-shape, or any other shape used for sputtering deposition. A supporting cup can be used to hold the at least one sputtering target together, and can be made from at least one nonmagnetic material. The at least one sputtering target can include at least one circular sputtering target having an about 2 inch diameter and a thickness up to and including about 0.25 inch. Moreover, the at least one sputtering target having an about 2 inch diameter, and the pressure for compressing the pressed powders in order to form the at least one sputtering target can range from about 1 metric ton to about 20 metric tons, inclusive, and can be dependent on the at least one constituent material.
The deposited material can be characterized by crystallography. The crystallography can comprise X-ray diffraction (XRD). The XRD comprises one or more of a θ-2θ or a 2θ-ω scan. The XRD technique comprises Laue oscillation peak analysis.
Additional advantages will be set forth in part in the description which follows or may be learned by practice. The advantages will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive, as claimed.
The components in the drawings are not necessarily to scale relative to each other and like reference numerals designate corresponding parts throughout the several views:
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. Methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present disclosure.
As used in the specification and the appended claims, the singular forms “a,” “an” and “the” include plural referents unless the context clearly dictates otherwise. Ranges may be expressed herein as from “about” one particular value, and/or to “about” another particular value. When such a range is expressed, another embodiment includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent “about,” it will be understood that the particular value forms another embodiment. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint.
“Optional” or “optionally” means that the subsequently described event or circumstance may or may not occur, and that the description includes instances where said event or circumstance occurs and instances where it does not.
Throughout the description and claims of this specification, the word “comprise” and variations of the word, such as “comprising” and “comprises,” means “including but not limited to,” and is not intended to exclude, for example, other additives, components, integers or steps. “Exemplary” means “an example of” and is not intended to convey an indication of a preferred or ideal embodiment. “Such as” is not used in a restrictive sense, but for explanatory purposes.
Disclosed are components that can be used to perform the disclosed methods and systems. These and other components are disclosed herein, and it is understood that when combinations, subsets, interactions, groups, etc. of these components are disclosed that while specific reference of each various individual and collective combinations and permutation of these may not be explicitly disclosed, each is specifically contemplated and described herein, for all methods and systems. This applies to all aspects of this application including, but not limited to, steps in disclosed methods. Thus, if there are a variety of additional steps that can be performed it is understood that each of these additional steps can be performed with any specific embodiment or combination of embodiments of the disclosed methods.
The present methods and systems may be understood more readily by reference to the following detailed description of preferred embodiments and the Examples included therein and to the Fig.'s and their previous and following description.
In one aspect of the disclosure, off-axis sputter deposition methods and systems are described. These methods and systems may differ significantly from conventional on-axis and off-axis sputter deposition, resulting in improved crystalline quality for a broad range of deposited materials. Moreover, the disclosed methods and systems rely on unconventional preparation methods of a sputtering target for the growth of complex films with stoichiometric composition, high crystalline ordering, sharp interfaces and smooth surfaces.
For purposes of this disclosure, a sputtering target can comprise a material that is used to create thin films in sputter deposition. During this process, atoms can be ejected from conventional sputtering targets by accelerated gaseous ions and coat a substrate. In this disclosure, unconventional preparation methods of a sputtering target are implemented. The effectiveness of these unconventional sputtering targets can depend on several factors, including their composition.
In one aspect of the disclosure, off-axis sputtering deposition methods and systems are described that can be used to grow single crystalline films of nonvolatile deposited materials, for example, simple metals, alloys, intermetallic compounds, simple binary oxides, complex oxides, semiconductors, and the like. On a broad level, the deposited materials can include, but not be limited to metals (e.g., Pt), intermetallic compounds, and oxides. The metals can include, for example, elemental metals (e.g., Pt) and alloys (e.g., Ni81Fe19). The intermetallic compounds can include, for example, binary intermetallic compounds (e.g. FeGe), ternary and quaternary intermetallic compounds (e.g., Co2FeSi, Co2FeAl, Co2FeAl0.5Si0.5). The oxides can include, for example, simple oxides (e.g. NiO) and complex oxides. The complex oxides can further include: single perovskite oxides (e.g. SrTiO3), double perovskite oxides (e.g. Sr2FeMoO6, Sr2CrReO6), spinel oxides (e.g. MgAl2O4), and Garnet oxides (e.g. Y3Fe5O12).
The off-axis geometry have been used in sputtering at high pressure, e.g., approximately 200 mTorr. At such a high pressure, most atoms sputtered off the target may go through many scatterings with the sputtering gas (for example, argon and possibly, oxygen) and may slow down before depositing on the substrate positioned at the side of the target. Consequently, energetic bombardment can be minimized. However, the high pressure sputtering can result in the stoichiometry of the deposited films being different from that of the target due to different scattering profiles of different species of atoms. This can lead to a relatively poor quality of the films.
The disclosed off-axis sputtering deposition methods and systems differs from the conventional on-axis and off-axis sputtering techniques, resulting in significantly improved crystalline quality for a broad range of deposited materials. The energetic bombardment problem in conventional sputtering techniques can be eliminated at much lower pressure, such as approximately 5 to approximately 15 mTorr, by positioning the substrate within a calibrated range of angle α with respect to the target normal direction. In particular, the angle α between the substrate and the target normal direction can take a value from 30° and 80° for high quality film growth. Smaller angle α results in higher deposition rate but increasing bombardment damage the films. Larger α results in lower bombardment damage and lower deposition rate. At low sputtering pressure (low as compared to the high pressure, e.g., approximately 200 mTorr used previously), the atoms may only go through a few scattering events before landing on the substrate 160, improving the stoichiometry of the deposited films. The optimal range of angle α 150 can be from approximately 45° and approximately 70°, while films with slightly reduced quality can still be grown at angle α 150 between 30° and 45° as well as from approximately 70° and approximately 80°. At approximately α<30°, bombardment damage increases and the geometry can be close to an on-axis sputtering. At approximately α>80°, the deposition rate may become very low. An α from approximately 50° to approximately 60° may work for most non-volatile deposited materials.
Another feature of the disclosed systems and methods includes a set of growth parameters optimized for the deposition of high quality single-crystal films of a wide range of deposited materials. All deposited materials grown using the disclosed methods and systems share similar parameters, e.g. total pressure of sputtering gas, sample position, and target requirements, which makes the disclosed methods and systems broadly applicable for many deposited materials without extensive development efforts. Other variables can include the oxygen partial pressure and substrate temperature, both of which can be predicted by the chemistry and thermodynamics of the deposited materials.
Growth parameters enable production of high-quality films during sputtering deposition using the described systems and methods. For example, for sputtering deposition of metallic or intermetallic materials (non-oxides), argon can be used as sputtering gas; for sputtering depositions of oxides, including simple oxides and complex oxides, an appropriate amount of oxygen may need to be added to argon as sputtering gas. For oxides, the amount of oxygen can be selected by following the reduction-oxidation chemistry of the materials. The reduction-oxidation environment during the solid-state synthesis can provide valuable guidance. For oxides that are stable in air at high temperatures, approximately 0.5% to approximately 5% oxygen in argon can be a good starting point. If a reduction or inert environment is required during solid-state synthesis, a reduced amount of oxygen or no oxygen is needed. Generally, the oxygen partial pressure can range from 0% to 1% in argon. During the sputtering deposition, for optimal deposition of the described materials the total pressure of the sputtering gas can be approximately 5 mTorr to approximately 15 mTorr with approximately 10 mTorr being a good starting point.
The optimal substrate location can be as given in Table I, below, which can be applicable for all material classes. Generally, an off-axis angle α 150 of approximately 50° to approximately 60° can work well. The substrate temperature can depend on the thermodynamic properties, in particular, the melting points or decomposition temperatures of the deposition materials. For example, for metals and their alloys, the most likely substrate temperatures can be approximately 300° C. to approximately 500° C.; for simple binary intermetallic compounds, the most likely substrate temperatures can be approximately 200° C. to approximately 500° C.; for complex intermetallic compounds, the most likely substrate temperatures can be approximately 400° C. to approximately 700° C.; for simple binary oxides, the most likely substrate temperatures can be approximately 400° C. to approximately 600° C.; and for complex oxides, the most likely substrate temperatures can be approximately 500° C. to approximately 850° C. Generally, the substrate temperature ranges from 200° C. and 850° C.
The sputtering energy source can be, for example, a DC source for conducting targets and RF source for insulating and conducting targets, though other forms of deposition and energy source are contemplated within the scope of embodiments of the disclosure. The sputtering deposition rate can be between approximately 10 and approximately 100 nm per hour to start.
Aspects of the disclosure may rely on an unconventional preparation process of the sputtering target as described, which may be relevant for the growth of complex films with the desired stoichiometric composition, a high crystalline ordering, sharp interfaces and smooth surfaces.
The mixture of constituent materials are ground 210 into fine powders with relatively uniform sizes of, for example, about 1 micrometer (μm) or smaller. If the starting constituent materials are large pieces, e.g., approximately millimeter dimensions, they can be crushed into smaller pieces (approximately sub-millimeter size) first. Then, a grinding instrument, for example, a planetary ball mill, can be used to grind the powders into approximately sub-micrometer powders.
The ground mixture of constituent materials are heated 210 to an appropriate temperature in an appropriate environment. For example, the FeGe mixture can be heated to approximately 400° C. to approximately 600° C. in a tube furnace in hydrogen environment to form the FeGe compound. The Co2FeSi mixture can be melted in an arc melting furnace in argon environment to form the Heusler compound. The Sr2FeMoO6 mixture can then be heated to approximately 1000° C. to approximately 1300° C. in a tube furnace in an environment of argon with approximately 1% to approximately 5% hydrogen. The synthesized material can be examined 215 for phases and purity using, for example, x-ray diffraction (XRD). If the material is not close to the pure phase needed for film deposition 220, further grinding and heating can be performed until close to pure phase can be synthesized.
If the synthesized material meet the requirement for phase purity 225, the materials can be ground 230 into fine powders of 0.1 to 1 micrometer in size using, for example, a planetary ball mill. If the material to be deposited can be purchased from a commercial vendor, the material can be ground the same way. Finally, the fine powders of the material to be deposited can be pressed into a sputtering target, 240. In order to press the powders into a sputtering target, a die (e.g., circular, rectangular or any other shape) may be needed. As illustrated in
The disclosed off-axis sputtering methods and systems can provide a solution to this challenge by using a sputtering target made of fine powders 420, as illustrated in
Table I, below, describes a set of growth parameters optimized for deposition of single-crystal films of a wide range of materials. The materials described in this disclosure can be grown using the disclosed methods and systems, and share some similar parameters. The table below gives some of these growth parameters, including an optimal range for each parameter, an extended range of values that allow film growth with sufficient quality, and a range of values that may be unfavorable for growth of high quality films.
In another aspect of the disclosure, X-ray diffraction can be used as a characterization technique for obtaining structural information of single-crystalline and polycrystalline materials. So-called θ-2θ or 2θ-ω scans (depending on the XRD systems) can be obtained through this technique. Invoking Bragg's law, we can define:
2d sin θ=nλ,
where d is the spacing of a set of atomic planes, θ is the x-ray incidence angle with respect to the sample surface, n is a positive integer, and λ is the wavelength of the x-ray (λ=approximately 0.15405 nm for common Cu Kα1 x-ray source). Each crystalline material gives a unique set of XRD peaks, from which structural information, for example, lattice type and lattice parameters can be retrieved.
For instance,
Moreover, for single crystal thin films with high crystalline ordering, highly uniform lattice constants, smooth surface and sharp interface with the substrate, the total thickness of the film can cause diffraction with the spacing d equal to the total film thickness; in the case of
The steps, processes and devices described below are to provide a non-limiting examples of applications of the systems and methods relating to the off-axis sputtering deposition techniques as described herein. It is to be appreciated that these are only one exemplary applications of the disclosed technology and are not to be limiting in scope or embodiments.
A single-perovskite oxide film, SrTiO3 (STO), was fabricated to demonstrate the versatility of this technique.
A2BB′O6 Double Perovskite Oxides
Double perovskites offer great flexibility and tunability in discovery of new materials with desired magnetic, electronic, and dielectric properties. Double perovskite epitaxial films are some of the most challenging materials to grow due to the stoichiometry and chemical complexity (4 elements), strict requirement of the oxygen environment to avoid formation of impurity phases, and difficulty in obtaining high degree of the B/B′-site ordering due to the similarity between B and B′ ions. The disclosed deposition systems and methods allow for the growth of a number of double perovskite single crystal films, including Sr2FeMoO6 (SFMO), Sr2CrReO6 (SCRO), Sr2CrNbO6 (SCNO), Sr2GaTaO6 (SGTO), Sr2AlTaO6 (SATO), and Sr2Al0.5Ga0.5TaO6 (SAGTO).
Double perovskite-based compounds produced by the disclosed methods can exhibit interesting properties and functionalities such as high temperature ferromagnetism, fully spin polarized ferromagnetism, and magnetoresistance which can find important applications in magnetoelectronics, data storage, and nonvolatile memory.
A3B5O12 Garnet Oxides
Magnetic garnets, in particular, Y3Fe5O12 (YIG), have been widely used in microwave devices, radar, telecommunication, and magnetic resonance due to their exceptionally low magnetic damping and low magnetic loss. Historically, YIG films and crystals have been grown by liquid-phase epitaxy (LPE) since the 1950s. Pulsed laser deposition (PLD) has been used to deposit epitaxial YIG films in recent years. However, due to YIG's complex crystal structure and the strict requirement for ordering, the crystalline quality of YIG was relatively poor. Using the disclosed off-axis sputtering methods and systems, the growth of YIG single-crystal thin films with improved crystalline quality can be demonstrated. These improved YIG thin film crystals led to enhanced spin transfer signals from YIG into a broad range of materials. Moreover, the materials can find application in spintronics.
AB2O4 Spinel Oxides
The AB2O4 spinel oxides are a group of oxide materials with interesting magnetic, optical and dielectric properties. The disclosed methods and system can be used to grow of one spinel oxide, MgAl2O4 (MAO), as shown in the 2θ-ω XRD spectrum in
Since the discovery of the Heusler compounds in 1901 about 800 Heusler phases have been reported. The electrical and magnetic properties of Heusler compounds range from metallic to semiconducting, and from ferromagnetic to fully spin-polarized half-metallic. The cobalt based full Heusler compounds, crystallizing in the L21 structure, show high Curie temperatures (up to 1100 K), high magnetic moments, and complete spin polarization at the Fermi level. These unique properties make the Co2YZ Heusler compounds attractive candidates, for example, for integration in spintronic and spin logic devices, such as hard drives and nonvolatile memories.
Using the disclosed methods and systems single-crystal epitaxial films of a number of Heusler compounds can be grown, including Co2FeSi, Co2FeAl, Co2FeAl0.5Si0.5, and Co2FeAl0.83Si0.17.
The disclosed methods and systems are capable of growing high crystalline quality epitaxial films for most of the ˜800 Heusler compounds with important technological applications.
The disclosed systems and methods can be used to grow NiO epitaxial single-crystal films on MgO substrates.
The XY intermetallic compounds can be important for both technological applications and fundamental scientific interest due to their electrical and magnetic properties. For example, the study of skyrmions in chiral magnetic materials such as FeGe has applications in magnetism. Skyrmions allows for the manipulation of nanometer-scale magnetic vortices through interactions between the spin texture and electron transport. Due to the ability to move skyrmions at low current densities, their topological stability, their small size (down to 1 nm), the ability to write and erase individual skyrmions, and multiple readout methods, there is interest in developing skyrmion materials for approaches to information storage and processing. The disclosed methods and systems can be used to demonstrate growth of phase-pure, single-crystal FeGe films on Si substrates using the invented sputtering technique. In particular,
Lastly, simple metals can be grown in single crystal film. For example,
In addition to the above classes of materials produced by the disclosed methods, the disclosed methods and system can be capable of growing single-crystal epitaxial films of many other materials.
While the methods and systems have been described in connection with preferred embodiments and specific examples, it is not intended that the scope be limited to the particular embodiments set forth, as the embodiments herein are intended in all respects to be illustrative rather than restrictive.
Unless otherwise expressly stated, it is in no way intended that any method set forth herein be construed as requiring that its steps be performed in a specific order. Accordingly, where a method claim does not actually recite an order to be followed by its steps or it is not otherwise specifically stated in the claims or descriptions that the steps are to be limited to a specific order, it is no way intended that an order be inferred, in any respect. This holds for any possible non-express basis for interpretation, including: matters of logic with respect to arrangement of steps or operational flow; plain meaning derived from grammatical organization or punctuation; the number or type of embodiments described in the specification.
Throughout this application, various publications may be referenced. The disclosures of these publications in their entireties are hereby incorporated by reference into this application in order to more fully describe the state of the art to which the methods and systems pertain.
It will be apparent to those skilled in the art that various modifications and variations can be made without departing from the scope or spirit. Other embodiments will be apparent to those skilled in the art from consideration of the specification and practice disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit being indicated by the following claims.
This application claims priority to and benefit of U.S. Provisional Patent Application Ser. No. 62/174,965 filed Jun. 12, 2015, which is fully incorporated by reference and made a part hereof.
This invention was made with government support under Grant No. DMR0820414 awarded by the National Science Foundation. The government has certain rights in this invention.
Number | Date | Country | |
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62174965 | Jun 2015 | US |