Patent Application
20250008634
This application claims priority of EP application 21214601.3 which was filed on Dec. 15, 2021 and EP application 22154302.8 which was filed on Jan. 31, 2022 and are incorporated herein in their entirety by reference.
The present invention relates to an optical system and method for a radiation source, particularly an optical system for directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from said target. The optical system is suitable for use as part of an EUV radiation source and/or a lithographic system.
A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus may, for example, project a pattern at a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate.
To project a pattern on a substrate a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features which can be formed on the substrate. A lithographic apparatus, which uses extreme ultraviolet (EUV) radiation, having a wavelength within the range 4-20 nm, for example 6.7 nm or 13.5 nm, may be used to form smaller features on a substrate than a lithographic apparatus which uses, for example, radiation with a wavelength of 193 nm.
One system that may be used to generate EUV radiation is a laser produced plasma (LPP) system which involves using a laser to deposit energy via a laser beam into a fuel material. The deposition of laser energy into the fuel material creates a plasma. EUV radiation is emitted from the plasma during de-excitation and recombination of electrons with ions of the plasma.
WO2012069898 discloses an LPP system that uses two laser beams, a main pulse laser beam and a pre-pulse laser beam, to generate EUV radiation from a fuel material. A beam shaping unit is provided on a beam path of the main pulse laser beam for transforming the main pulse laser beam into a hollow laser beam. A first focusing optical element is provided downstream of the beam shaping unit for focusing the hollow laser beam. A second focusing optical element is provided for focusing the pre-pulse laser beam such that the pre-pulse laser beam and the hollow main pulse laser beam travel in the same direction toward the fuel material. The beam shaping of the main pulse laser beam and the focusing of the pre-pulse laser beam occur on different, perpendicular optical axes.
It is an object of the invention to provide an optical system that improves the generation of EUV radiation from an LPP system.
According to a first aspect of the present disclosure there is provided an optical system for directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from said target. The optical system comprises a first optical component configured to redistribute the first laser pulse to form a shaped laser pulse having a hollow region and a second optical component configured to focus the shaped laser pulse toward the target. The optical system comprises a third optical component configured to focus the second laser pulse toward the target within the hollow region of the shaped laser pulse, wherein the first, second and third optical components are coaxially arranged on the optical axis.
The optical system according to the present disclosure advantageously benefits from an increased conversion efficiency compared to optical systems that reshape the first laser pulse and focus the second laser pulse along different axes. The increase in conversion efficiency is, at least in part, due to there being a negligible (or zero) angle between the shaped first laser pulse and the focused second laser pulse, a negligible (or zero) angle between the shaped first laser pulse and the optical axis of the optical system, and a negligible (or zero) angle between the focused second laser pulse and the optical axis of the optical system. In addition, conversion efficiency is further improved because a numerical aperture for the first and second laser pulses is increased compared to known optical systems. Furthermore, conversion efficiency is further improved because the first and second pulses share the same plane.
The optical system according to the present disclosure advantageously benefits from a reduced heat load on (and associated risk of damage to) the optical components included therein compared to known optical systems in which the first and second laser pulses occupy the same region along the optical axis. This is because the first and second laser pulses may interact with different optical elements and/or different portions of optical elements rather than interacting with the same portions of the same optical elements. Furthermore, an optical efficiency of the optical system disclosed herein is increased compared to known optical systems that allow the first and second laser pulses to occupy the same region along the optical axis because different optical components (e.g. different optical elements and/or different portions of the same optical elements) may be tailored to interact with the first and second laser pulses (which may comprise different characteristics, e.g. wavelengths, powers, etc.).
The optical system according to the present disclosure advantageously benefits from an increased stability and reproducibility of spatial profiles of the first and second laser pulses at the target compared to known optical systems used in known EUV radiation sources. This is because the coaxial arrangement enables more evenly distributed spatial profiles of the first and second laser pulses at the target compared to known optical systems used in known EUV radiation sources. Furthermore, redistributing the spatial profile of the first laser pulse ensures that the energy of the first laser pulse is retained rather than at least partially lost. In addition, the coaxial arrangement of optical components provides a compact design comprising easy to repair and/or replace optical components.
The words “first and “second” and the like are merely used to identify different features, and do not denote a temporal or spatial order. The first laser pulse may be incident on the target after the second laser pulse is incident on the target.
The plurality of optical components may comprise reflective optical components. The plurality of optical components may comprise transmissive optical components.
The first and second laser pulses may comprise different wavelengths.
The target may be a droplet of fuel (e.g. tin).
The second laser pulse may be configured to change a shape of the target. For example, the second laser pulse may be configured to change the target from a droplet shape to a pancake shape.
The second laser pulse may comprise a wavelength of about 1030 nm.
The first laser pulse may be configured to cause the target to emit extreme ultraviolet radiation. For example the first laser pulse may convert the target into a plasma that emits extreme ultraviolet radiation.
The first laser pulse may comprise a wavelength of about 10.6 μm.
The first optical component and the third optical component may be located on different surfaces of a single optical element.
This arrangement advantageously reduces the number of optical elements compared to known optical systems, thereby reducing cost and complexity whilst simplifying repair and replacement compared to known optical systems.
The first optical component may be formed on a front side of the single optical element. The third optical component may be formed on a back side of the single optical element.
The optical system may comprise a radiation collector configured to receive extreme ultraviolet radiation emitted by the target. The radiation collector may comprise an aperture coaxially arranged on the optical axis. The second and third optical components may be configured to focus the shaped and second laser pulses through the aperture.
Having a collector aperture that is coaxial with the shaped and second laser pulses and the target advantageously increases a conversion efficiency of the optical system (when generating EUV radiation) compared to known optical systems that form the shaped and second laser pulses along different axes and/or locate the collector aperture off-axis.
The second optical component may be configured to interact with the shaped laser pulse only. The third optical component may be configured to interact with the second laser pulse only.
This arrangement advantageously enables optical components to be tailored to different characteristics (e.g. wavelengths) of first and second pulses.
The second optical component may comprise an opening coaxially arranged on the optical axis.
This arrangement advantageously provides a more compact system compared to known optical systems.
The third optical component may be configured to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped laser pulse. The third laser pulse may comprise a different wavelength to the first and second laser pulses.
The third laser pulse may be incident on the target after the first laser pulse and before the second laser pulse.
The third laser pulse may be configured to prepare the target for receipt of the second laser pulse. For example, the third laser pulse may be configured to atomize the target (i.e. convert the pancake droplet to many small particles, similar to a gaseous state) in preparation for receipt of the first laser pulse for the generation of EUV radiation. The third laser pulse may act to increase an absorption of the first laser pulse by the target.
The third laser pulse may have a wavelength of about 1064 nm.
According to a second aspect of the present disclosure, there is provided an extreme ultraviolet radiation source comprising the optical system of the first aspect.
According to a third aspect of the present disclosure, there is provided a lithographic system comprising the extreme ultraviolet radiation source of the second aspect.
According to a fourth aspect of the present disclosure, there is provided a method of directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from said target. The method comprises using a first optical component to redistribute the first laser pulse to form a shaped laser pulse having a hollow region and using a second optical component to focus the shaped laser pulse toward the target. The method further comprises using a third optical component to focus the second laser pulse toward the target within the hollow region of the shaped laser pulse. The method also comprises coaxially arranging the first, second and third optical components on the optical axis.
The first and second laser pulses may comprise different wavelengths of radiation.
The method may comprise locating the first optical component and the third optical component on different surfaces of a single optical element.
The method may comprise locating the first optical component on a front side of the single optical element and locating the third optical component on a back side of the single optical element.
The method may comprise using a radiation collector to receive extreme ultraviolet radiation emitted by the target. The method may comprise arranging an aperture of the radiation collector coaxially on the optical axis. The method may comprise using the second and third optical components to focus the shaped and second laser pulses through the aperture.
The method may comprise using the second optical component to interact with the shaped laser pulse only. The method may comprise using the third optical component to interact with the second laser pulse only. The method may comprise providing an opening in the second optical component and coaxially arranging the opening on the optical axis. The method may comprise using the third optical component to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped pulse. The third laser pulse may comprise a different wavelength to the first and second laser pulses.
According to a fifth aspect of the present disclosure, there is provided a method of projecting a patterned beam of radiation onto a substrate, comprising using the method of the fourth aspect to generate extreme ultraviolet radiation.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which:
The illumination system IL is configured to condition the EUV radiation beam B before the EUV radiation beam B is incident upon the patterning device MA. Thereto, the illumination system IL may include a facetted field mirror device 10 and a facetted pupil mirror device 11. The faceted field mirror device 10 and faceted pupil mirror device 11 together provide the EUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution. The illumination system IL may include other mirrors or devices in addition to, or instead of, the faceted field mirror device 10 and faceted pupil mirror device 11.
After being thus conditioned, the EUV radiation beam B interacts with the patterning device MA. As a result of this interaction, a patterned EUV radiation beam B′ is generated. The projection system PS is configured to project the patterned EUV radiation beam B′ onto the substrate W. For that purpose, the projection system PS may comprise a plurality of mirrors 13,14 which are configured to project the patterned EUV radiation beam B′ onto the substrate W held by the substrate table WT. The projection system PS may apply a reduction factor to the patterned EUV radiation beam B′, thus forming an image with features that are smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied. Although the projection system PS is illustrated as having only two mirrors 13, 14 in
The substrate W may include previously formed patterns. Where this is the case, the lithographic apparatus LA aligns the image, formed by the patterned EUV radiation beam B′, with a pattern previously formed on the substrate W.
A relative vacuum, i.e. a small amount of gas (e.g. hydrogen) at a pressure well below atmospheric pressure, may be provided in the radiation source SO, in the illumination system IL, and/or in the projection system PS.
The radiation source SO shown in
The lithographic apparatus LA comprises an optical system 100 for directing the laser pulses 2 along an optical axis to the tin at the plasma formation region 4 to generate EUV radiation. An example of the optical system 100 is shown in greater detail in
The EUV radiation from the plasma is collected and focused by a collector 5. The collector 5 comprises, for example, a near-normal incidence radiation collector 5 (sometimes referred to more generally as a normal-incidence radiation collector). The collector 5 may have a multilayer mirror structure which is arranged to reflect EUV radiation (e.g., EUV radiation having a desired wavelength such as 13.5 nm). The collector 5 may have an ellipsoidal configuration, having two focal points. A first one of the focal points may be at the plasma formation region 4, and a second one of the focal points may be at an intermediate focus 6, as discussed below. The collector 5 may comprise an aperture 20 through which the laser pulses 2 travel to reach the plasma formation region 4.
The laser system 1 may be spatially separated from the radiation source SO. Where this is the case, the laser pulses 2 may be passed from the laser system 1 to the radiation source SO with the aid of a beam delivery system (not shown) comprising, for example, suitable directing mirrors and/or a beam expander, and/or other optics. The laser system 1, the radiation source SO and the beam delivery system may together be considered to be a radiation system.
Radiation that is reflected by the collector 5 forms the EUV radiation beam B. The EUV radiation beam B is focused at intermediate focus 6 to form an image at the intermediate focus 6 of the plasma present at the plasma formation region 4. The image at the intermediate focus 6 acts as a virtual radiation source for the illumination system IL. The radiation source SO is arranged such that the intermediate focus 6 is located at or near to an opening 8 in an enclosing structure 9 of the radiation source SO.
In the example of
The optical system 100 comprises a second optical component 160 configured to focus the shaped laser pulse 150 toward the target. In the example of
The optical system 100 comprises a third optical component 170 configured to focus the second laser pulse 120 toward the target within the hollow region 155 of the shaped laser pulse 150. That is, the third optical component 170 directs and focuses the second laser pulse 120 along the optical axis 130 to the target such that the second laser pulse 120 propagates within the hollow region 155 of the shaped laser pulse 150. A circular cross-section of the second laser pulse 120 is nested within the inner circle of the annular cross-section of the shaped laser pulse 150 (an example of which, as seen along the optical axis 130, is shown in
Advantageously, the coaxial arrangement of the first, second and third optical components 140, 160, 170 allows to point the laser pulses 110, 120 (or laser beams) coaxially in to the plasma formation region location 4 and interact with the target even if in the case the target is slightly off axis.
In another embodiment, the third optical component 170 comprises a focusing mirror having a concave reflective surface or a flat surface upon which the second laser pulse 120 is incident. In the embodiment wherein the third optical component 170 comprises a mirror having a flat surface, the optical system 100 further comprises an additional focusing system (not shown in the figures) positioned in the upstream configured to focus the second laser pulse 120.
In the example of
The first optical component 140 is configured to interact with the first laser pulse 110 only. The second optical component 160 is configured to interact with the shaped laser pulse 150 only. The third optical component 170 is configured to interact with the second laser pulse 120 only. This advantageously allows each optical component 140,160, 170 to be tailored towards interacting with its respective laser pulse 110, 120. For example, the first laser pulse 110, and therefore the shaped laser pulse 150, may have a wavelength of about 10.6 μm. The first laser pulse 110 may be a CO2 laser pulse (i.e. generated by a carbon dioxide laser). The first and second optical components 140, 160 may therefore be designed specifically to be as reflective as possible for wavelengths of about 10.6 μm. For example, the first and/or second optical components 140, 160 may comprise a reflective coating material such as, for example, Copper, Silicon Carbide, Silicon, coated steel, etc. As another example, the second laser pulse 120 may have a wavelength of about 1030 nm or 1064 nm. The second laser pulse 120 may be a pulse generated in a solid state laser, such as a YAG laser. The third optical component 170 may therefore be designed specifically to be as reflective as possible for wavelengths of about 1030 nm or 1064 nm. For example, the third optical component 170 may comprise a reflective coating material such as, for example, Silver, Gold, etc. Devoting different optical components 140,160, 170 to different laser pulses 110, 120 also advantageously reduces the risk of the optical components overheating and thereby deforming or becoming damaged compared to known optical system that use a single optical element to interact with both laser pulses.
Additionally, the optical system of the present invention advantageously makes easier the coating selection process, allowing using well known coatings for each laser pulses or laser beams.
Whilst
The second optical component (not shown in
In another embodiment, laser pulses 120 and 200 may be located next to each other on the third optical component 170. Therefore, the third optical component 170 is configured to focus said pulses even if they are placed in different areas of said third optical component 170. This means that the second laser pulse 120 and the third laser pulse 200 are close to the axis. Therefore, the angle with respect to the optical axis 130 is reduced in comparison with other arrangements of the state of the art, which in turn advantageously increases the conversion efficiency of the extreme ultraviolet radiation source SO.
It will be appreciated that each laser pulse 120, 150, 200 travels along the optical axis 130 and arrives at the target at different times. The view of
Each laser pulse comprises one or more different characteristics (e.g. wavelength, power, shape, etc.) for interacting with the target in different ways. The second laser pulse 120 may arrive at the target first. The second laser pulse 120 may be configured to change a shape of the target. For example, the second laser pulse 120 may be configured to change the target from a droplet shape to a flattened circular, or “pancake” shape. The second laser pulse 120 may comprise a wavelength of about 1030 nm or about 1064 nm. The second laser pulse 120 may be generated by one or more of any suitable lasers such as, for example, a solid state laser, a semiconductor laser, etc.
The third laser pulse 200 may arrive at the target second. That is, the third laser pulse 200 may be incident on the target after the second laser pulse 120 and before the first laser pulse 110. The third laser pulse 200 may be configured to prepare the target for receipt of the first laser pulse 110. For example, the third laser pulse 200 may be configured to atomize the target (i.e. convert the pancake droplet to many small particles, similar to a gaseous state) in preparation for receipt of the first laser pulse 110 for the generation of EUV radiation. The third laser pulse 200 may act to increase an absorption of the first laser pulse 110 by the target. The third laser pulse 200 may have a wavelength of about 1064 nm. The third laser pulse 200 may be generated by one or more of any suitable lasers such as, for example, a solid state laser, a semiconductor laser, etc. A single laser may be used to generate the second laser pulse 120 and the third laser pulse 200.
It should be understood that another definition of atomizing the target may be rarifying the target.
The first laser pulse 110 may arrive at the target last. That is, the first laser pulse 110 may be incident on the target after the second laser pulse 120 and the third laser pulse 200. The first laser pulse 110 may be configured to cause the target to emit EUV radiation. For example, the first laser pulse 110 may convert the target into a plasma that emits EUV radiation. The first laser pulse 110 may comprise a wavelength of about 10.6 μm. The first laser pulse 110 may be generated by one or more of any suitable lasers such as, for example, a CO2 laser.
As previously discussed with reference to
The example of the previous paragraph may be applicable for lithography systems with high numerical aperture NA optics. For EUV lithography systems, it should be understood as high NA a system with NA above 0.33, for example 0.55. High NA optics results in shorter effective focal length of said optics. The coaxial arrangement of the laser pulses 120, 150, 200 (e.g. as shown in
The coaxial arrangement of the laser pulses 120, 150, 200 reduces an angle between the angle of incidence of the first laser pulse 110 on the target and an angle of incidence of the second laser pulse 120 on the target compared to known optical systems. This advantageously improves an efficiency of a radiation source SO and/or a lithographic apparatus LA comprising the optical system 100 because less EUV radiation is lost at the target and/or in the far field (i.e. in the illumination system IS and/or projection system PS of the lithographic apparatus LA). The angle between the angle of incidence of the first laser pulse 110 on the target and the angle of incidence of the second laser pulse 120 on the target may be substantially zero.
The coaxial arrangement of the laser pulses 120, 150, 200 reduces an angle between the angle of incidence of the first laser pulse 110 at the target and the optical axis 130 upon which the aperture 20 of the radiation collector is centered compared to known optical systems. This advantageously improves an efficiency of a radiation source SO and/or a lithographic apparatus LA comprising the optical system 100 because less EUV radiation is lost through a tilt in the EUV radiation in the far field (i.e. in the illumination system IS and/or projection system PS of the lithographic apparatus LA). In addition, losses of EUV radiation at the intermediate focus 6 are reduced due to the image of the plasma at the intermediate focus (i.e. the virtual radiation source for the illumination system IS) not being tilted. The angle between the angle of incidence of the first laser pulse 110 at the target and the optical axis 130 upon which the aperture 20 of the radiation collector is centered may be substantially zero.
The coaxial arrangement of the laser pulses 120, 150, 200 increases a numerical aperture available to the laser pulses 110, 120, 200 compared to known optical systems. Increasing the numerical aperture available to the laser pulses 110, 120, 200 advantageously decreases a presence of optical aberrations which may in turn reduce losses of EUV radiation and/or reduce the strength of unwanted back reflections occurring in the optical system 100 and/or the lithographic apparatus LA. Increasing the numerical aperture available to the laser pulses 110, 120, 200 also advantageously reduces a limit on the size of the third laser pulse 200 at the target, which may in turn improve an efficiency with which EUV radiation is generated.
The coaxial arrangement of the laser pulses 120, 150, 200 advantageously increases the conversion efficiency of the extreme ultraviolet radiation source SO.
The coaxial arrangement of the laser pulses 120, 150, 200 advantageously increases a stability and reproducibility of the beam profile of the first laser pulse 110 incident on the target, which in turn improves an efficiency and stability of EUV generation and lithographic printing when incorporating the optical system 100.
The optical system of
The alternative optical system 400 comprises a second optical component 460 configured to focus the shaped laser pulse 150 towards the target. In the example of
The alternative optical system 400 comprises a third optical component 470 configured to focus the second laser pulse 120 toward the target within the hollow region 455 of the shaped laser pulse 450. In the example of
In another embodiment the third optical element may be an opening or an aperture. In said embodiment, an additional optical element may be located upstream configured to focus the second laser pulse 120.
Despite comprising transmissive components rather than reflective components, the alternative optical system 400 conditions laser pulses 110, 120 to achieve the same result as the optical system 100 of
The first optical component 440 is configured to interact with the first laser pulse 110 only. The second optical component 460 is configured to interact with the shaped laser pulse 150 only. The third optical component 470 is configured to interact with the second laser pulse 120 only. This advantageously allows each optical component 440, 460, 470 to be tailored towards interacting with its respective laser pulse 110, 120. For example, the first laser pulse 110, and therefore the shaped laser pulse 150, may have a wavelength of about 10.6 μm. The first and second optical components 440, 460 may therefore be designed specifically to be as transmissive as possible for wavelengths of about 10.6 μm. For example, the first and/or second optical components 140, 160 may comprise a material such as ZnSe. As another example, the second laser pulse 120 may have a wavelength of about 1030 nm or about 1064 nm. The third optical component 470 may therefore be designed specifically to be as reflective as possible for wavelengths of about 1030 nm or about 1064 nm. For example, the third optical component 170 may comprise a material such as Quartz, Fused Silica, BK7, etc. Devoting different optical components 440, 460, 470 to different laser pulses 110, 120 also advantageously reduces the risk of the optical components overheating and thereby deforming or becoming damaged compared to known optical system that use a single optical element to interact with both laser pulses.
The method may comprise an optional step of locating the first optical component and the third optical component on different surfaces of a single optical element (e.g. the single optical element 180 shown in
The method may comprise an optional step of using a radiation collector to receive extreme ultraviolet radiation emitted by the target (e.g. the radiation collector 5 shown in
The method may comprise an optional step of using the second and third optical components to focus the shaped and second laser pulses through the aperture (e.g. the coaxial arrangement shown in
The method may comprise an optional step of using the first optical component to interact with the first laser pulse only. The method may comprise an optional step of using the second optical component to interact with the shaped laser pulse only. The method may comprise an optional step of using the third optical component to interact with the second laser pulse only. Each of these optional steps is demonstrated by for example, the optical systems of
The method may comprise an optional step of providing an opening in the second optical component. The method may comprise an optional step of coaxially arranging the opening on the optical axis. Each of these optional steps is demonstrated by for example, the optical systems of
The method may comprise an optional step of using the third optical component to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped pulse. The third laser pulse may comprise a different wavelength to the first and second laser pulses. Each of these optional steps is demonstrated by for example, the coaxial arrangement of
A method of projecting a patterned beam of radiation onto a substrate, may comprise using the method of
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications. Possible other applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc.
Although specific reference may be made in this text to embodiments of the invention in the context of a lithographic apparatus, embodiments of the invention may be used in other apparatus. Embodiments of the invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or mask (or other patterning device). These apparatus may be generally referred to as lithographic tools. Such a lithographic tool may use vacuum conditions or ambient (non-vacuum) conditions.
Where the context allows, embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof. For example, the embodiments of the invention may be implemented using a computer program comprising computer readable instructions configured to cause a computer to carry out a method according to the invention. Embodiments of the invention may include a computer readable medium carrying said computer program. As another example, embodiments of the invention may be implemented using a computer apparatus comprising a memory storing processor readable instructions and a processor arranged to read and execute instructions stored in said memory. Said processor readable instructions may comprise instructions arranged to control the computer to carry out a method according to embodiment of the invention. Embodiments of the invention may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g. carrier waves, infrared signals, digital signals, etc.), and others. Further, firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines, instructions, etc. and in doing that may cause actuators or other devices to interact with the physical world.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The descriptions above are intended to be illustrative, not limiting. Thus it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the clauses set out below
| Number | Date | Country | Kind |
|---|---|---|---|
| 21214601.3 | Dec 2021 | EP | regional |
| 22154302.8 | Jan 2022 | EP | regional |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/EP2022/087265 | 12/21/2022 | WO |
