Claims
- 1. A telecommunications equipment overvoltage protector module comprising
- (A) at least one semiconductor surge protection device comprising a first electrode and a second electrode; a semiconductor chip that is in electrical-conductive relation with said first and second electrodes, respectively, such that a region exists between said first and second electrodes; and sealing means for sealing said region, said sealing means comprising a sealing layer that (i) is adhered to both electrodes, (ii) defines with said electrodes a cavity wherein said chip is provided, and (iii) is comprised of a dielectric resin material that is resilient under both room-temperature and high-heat conditions, wherein under explosive chip failure said electrodes move into an electrical-conductive relation to sustain a short circuit in the event of chip destruction;
- (B) a ground side-conductive pathway that includes a ground terminal and that is connected to said first electrode;
- (C) a line side-conductive pathway that includes a line terminal and that is connected to said second electrode; and
- (D) means for biasing said first and second electrodes toward each other so as to sustain a short circuit in the event of chip destruction, wherein components (A), (B), (C) and (D) are in conductive relation such that they together define a telecommunications equipment voltage-surge protection circuit running from said line terminal to said ground terminal.
- 2. An overvoltage protector module according to claim 1, wherein means (D) includes a conductive spring.
- 3. An overvoltage protector module according to claim 1, wherein one of said ground side-conductive pathway and said line side-conductive pathway further includes a heat-fusible element such that, upon a fusing of said heat-fusible element, a direct connection is effected between said ground side-conductive pathway and said line side-conductive pathway.
- 4. An overvoltage protector module according to claim 3, wherein means (D) includes a conductive spring that biases said heat-fusible element toward establishment of said direct connection.
- 5. An overvoltage protector module according to claim 3, wherein (i) said module includes a pair of line terminals and (ii) said line side-conductive pathway further includes a line circuit connecting said pair of line terminals.
- 6. An overvoltage protector module according to claim 1, wherein said module comprises a plurality of semiconductor surge protection devices which are maintained by said means (D) in an electrical-conductive relation with each other.
- 7. An overvoltage protector module according to claim 1, wherein said dielectric resin material is resilient in a temperature range as low as -40.degree. C.
- 8. An overvoltage protector module according to claim 1, wherein said resin material comprises a thermoplastic olefin acrylic copolymer.
- 9. An overvoltage protector module according to claim 8, wherein said copolymer comprises a monomer from the group consisting of an ethylene acrylic acid, an ethylene methacrylic acid, a propylene acrylic acid and a propylene methacrylic acid copolymer.
- 10. An overvoltage protector module according to claim 9, wherein said copolymer is an ethylene acrylic acid copolymer containing from about 6% to 30% acrylic acid.
- 11. An overvoltage protector module according to claim 10, wherein said ethylene acrylic acid copolymer contains about 20% acrylic acid.
- 12. An overvoltage protector module according to claim 1, wherein said resin material comprises a thermosetting resin.
- 13. An overvoltage protector module according to claim 12, wherein said thermosetting resin is selected from the group consisting of a polyimide elastomer, a polyurethane, and a silicone rubber.
- 14. An overvoltage protection module as recited in claim 1, wherein:
- each of said electrodes comprises a conductive pedestal, each said conductive pedestal comprising a substantially flat interior projecting portion and an indented exterior portion, such that said interior portion projects from said indented portion;
- said pedestals face each other to form said cavity;
- said semiconductor chip is arranged in said cavity so that an interior portion of said chip makes contact with each of said substantially flat interior projecting portions of said electrodes and exterior edge portions of said chip at least partially overhang said indented exterior portions of said electrodes; and
- said resin sealing said cavity is arranged to make contact with said indented exterior portions of said electrodes and with said exterior portions of said chip overhanging said indented exterior portions of said electrodes.
- 15. An overvoltage protector module as recited in claim 14, wherein said resin substantially fills an area bounded by said indented portions of said electrodes.
- 16. An electronic system comprising at least one circuit that includes telecommunications equipment surge-protecting means for protecting said circuit against a current surge up to 10.sup.4 amps or more, said telecommunications equipment surge-protecting means comprising a first electrode and a second electrode; a semiconductor chip that is in electrical-conductive relation with said first and second electrodes, respectively, such that a region exists between said first and second electrodes; and sealing means for sealing said region, said sealing means comprising a sealing layer that (a) is adhered to both electrodes, (b) defines with said electrodes a cavity wherein said chip is provided, and (c) is comprised of a dielectric resin material that is resilient under both room-temperature and high-heat conditions, wherein under explosive chip failure said electrodes move into an electrical-conductive relation to sustain a short circuit in the event of chip destruction.
- 17. A telecommunications equipment semiconductor surge protection device comprising a first electrode and a second electrode; a semiconductor chip that is in electrical-conductive relation with said first and second electrodes, respectively, such that a region exists between said first and second electrodes; and sealing means for sealing said region, said sealing means comprising a sealing layer that (a) is adhered to both electrodes, (b) defines with said electrodes a cavity wherein said chip is provided, and (c) is comprised of a dielectric resin material that is resilient under both room-temperature and high-heat conditions, wherein under explosive chip failure said electrodes move into an electrical-conductive relation to sustain a short circuit in said protection device in the event of chip destruction.
Priority Claims (1)
Number |
Date |
Country |
Kind |
528200 |
Jan 1987 |
CAX |
|
Parent Case Info
This application is a continuation of application Ser. No. 07/545,952, filed Jul. 2, 1990, abandoned which is a continuation of Ser. No. 07/382,131, filed Jul. 20, 1989, (now Pat. No. 4,939,619), which is a continuation-in-part of Ser. No. 07/101,094, filed Sep. 25, 1987, (now Pat. No. 4,851,956).
US Referenced Citations (17)
Foreign Referenced Citations (8)
Number |
Date |
Country |
141179 |
Sep 1983 |
EPX |
123126 |
Oct 1984 |
EPX |
2598031 |
Oct 1987 |
FRX |
3113850 |
Jan 1982 |
DEX |
3238557 |
Apr 1984 |
DEX |
465064 |
Nov 1968 |
CHX |
2057762 |
Apr 1981 |
GBX |
WO8300586 |
Dec 1985 |
WOX |
Continuations (2)
|
Number |
Date |
Country |
Parent |
545952 |
Jul 1990 |
|
Parent |
382131 |
Jul 1989 |
|
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
101094 |
Sep 1987 |
|