Claims
- 1-142. (Cancelled)
- 143. A method for making a palladium-containing film, the method comprising the steps of:
applying a layer of paste to a substrate, said paste including particles dispersed in a carrier liquid, said particles including a metallic phase with greater than about 10 weight percent palladium, said particles having a weight average size of from about 0.1 micron to about 4 microns; removing said carrier liquid from said layer of paste and forming on said substrate a film including palladium from said particles; wherein, said metallic phase is substantially polycrystalline with a mean crystallite size of larger than about 50 nanometers and said particles have a resistance to oxidation of said palladium in said particles such that, when said particles are heated in an atmosphere of industrial grade air at atmospheric pressure to a temperature of 900° C. at a heating rate of about 10° C. per minute during thermogravimetric analysis, said particles demonstrate a maximum weight gain of no greater than about 40 percent relative to a theoretical weight gain for complete oxidation of said palladium in said particles.
- 144. A method for making a palladium-containing film, the method comprising the steps of:
applying a layer of paste to a substrate, said paste including palladium-containing particles dispersed in a carrier liquid, said particles having a weight average size of from about 0.1 micron to about 3 microns; removing said carrier liquid from said layer of paste and forming on said substrate a film including palladium from said particles; wherein, said particles having a size distribution such that greater than about 90 weight percent of said particles are smaller than about twice said weight average size and said particles including a first material phase comprising palladium and a second material phase being substantially free of palladium.
- 145. The method of claim 144, wherein:
said first material phase comprises greater than about 50 weight percent of said particles.
- 146. The method of claim 144, wherein:
said second material phase comprises less than about 30 weight percent of said particles.
- 147. The method of claim 144, wherein:
said first material phase is electrically conductive and said second material phase is dielectric.
- 148. The method of claim 144, wherein:
said substrate comprises a dielectric material for a capacitor and said second material phase of said particles also comprises said dielectric material.
- 149. The method of claim 144, wherein:
said dielectric material is a titanate.
- 150. The method of claim 144, wherein:
said second material phase comprises an oxide material.
- 151. The method of claim 144, wherein:
said second material phase comprises a ceramic material.
- 152. The method of claim 144, wherein:
said step of forming on said substrate a film including palladium from said particles comprises heating said particles, on said substrate, to a temperature of greater than about 300° C.
- 153. The method of claim 144, wherein:
said method further comprises preparing a structure of stacked layers including a plurality of first layers including a dielectric material and second layers including said particles; and heating said structure to a temperature of greater than about 300° C. to form a microelectronic structure including a plurality of palladium-containing films, having palladium from said particles, and including a plurality of dielectric layers, with at least one of said dielectric layers being between two adjacent of said palladium-containing films.
- 154-167. (Cancelled)
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to U.S. Provisional Patent Application No. 60/039,450 filed Feb. 24, 1998 and to U.S. Provisional Patent Application No. 60/038,258 filed Feb. 24, 1998, the contents of which are incorporated herein.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60039450 |
Feb 1997 |
US |
|
60038258 |
Feb 1997 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09668441 |
Sep 2000 |
US |
Child |
10790958 |
Mar 2004 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09028751 |
Feb 1998 |
US |
Child |
09668441 |
Sep 2000 |
US |