Pattern forming method and phase shift mask manufacturing method

Abstract

A phase shift mask manufacturing method comprises the steps of processing a light-shielding layer over a transparent substrate into a predetermined light-shielding pattern, forming a resist film on the predetermined light-shielding pattern, performing writing on the resist film based on writing data and developing the resist film, thereby forming a resist pattern, and etching an underlying layer using the predetermined light-shielding pattern and the resist pattern as a mask, thereby forming recesses, that serve as phase shift portions, in the underlying layer. The writing data includes a portion where pattern data corresponding to at least the two recesses adjacent to each other through a light-shielding portion in the predetermined light-shielding pattern are combined into one pattern data.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C show the general structures of auxiliary pattern type phase shift masks, wherein FIG. 1A is a plan view of the auxiliary pattern type phase shift mask (the plan view is the same for both masks) and FIGS. 1B and 1C respectively show sections, each taken along line A-A in FIG. 1A, in terms of two examples;

FIGS. 2A to 2G are process diagrams showing a conventional phase shift mask manufacturing method;

FIGS. 3A and 3B are plan views showing a pattern layout in which part of auxiliary opening portions formed around respective main opening portions are adjacent to each other, in a conventional phase shift mask manufacturing method;

FIGS. 4A to 4E show, in terms of sections taken along line B-B in FIG. 3B, manufacturing processes in the case where the pattern layout as shown in FIG. 3A is present, in the conventional phase shift mask manufacturing method;

FIGS. 5A and 5B are plan views for explaining a structure of a phase shift mask manufactured by a first embodiment of a phase shift mask manufacturing method according to this invention;

FIGS. 6A to 6G are process diagrams showing the first embodiment of the phase shift mask manufacturing method according to this invention in terms of sections taken along line C-C in FIG. 5A;

FIG. 7A is a sectional view for explaining a process of forming a second resist film into a resist pattern in the phase shift mask manufacturing method according to this invention;

FIG. 7B is a plan view showing writing data for writing the resist pattern on the second resist film in the phase shift mask manufacturing method according to this invention;

FIGS. 8A to 8C are plan views showing writing data to be used in the phase shift mask manufacturing method according to this invention, particularly for explaining, in sequence, a method of combining adjacent two auxiliary opening portions into one pattern data;

FIGS. 9A to 9C are plan views for explaining another example of writing data to be written on a second resist film in the phase shift mask manufacturing method according to this invention;

FIGS. 10A and 10B are a sectional view and a plan view, respectively, for explaining a second embodiment of a phase shift mask manufacturing method according to this invention;

FIGS. 11A to 11E are plan views showing, in an enlarged manner, a pattern having a portion where openings corresponding to auxiliary opening portions are adjacent to each other, in the phase shift mask manufacturing method according to this invention;

FIGS. 12A to 12C are plan views for explaining still another example of writing data to be written on a second resist film in the phase shift mask manufacturing method according to this invention; and

FIGS. 13A to 13G are process diagrams showing a second example of a phase shift mask manufacturing method according to this invention.

Claims

1. A pattern forming method for processing a coating layer over a substrate into a predetermined pattern by partly removing said coating layer and then forming recesses in an underlying layer below said coating layer at least a part of where said coating layer is removed, said pattern forming method comprising the steps of: processing said coating layer into said predetermined pattern;forming a resist film on said coating layer processed into said predetermined pattern;performing writing on said resist film based on writing data and developing said resist film, thereby forming a resist pattern; andetching said underlying layer using said coating layer processed into said predetermined pattern and said resist pattern as a mask, thereby forming said recesses in said underlying layer,wherein said writing data includes a portion where pattern data corresponding to at least the two recesses adjacent to each other through a remaining portion of said coating layer processed into said predetermined pattern are combined into one pattern data.

2. A pattern forming method according to claim 1, wherein said underlying layer is said substrate.

3. A phase shift mask manufacturing method for processing a light-shielding layer over a transparent substrate into a predetermined pattern by partly removing said light-shielding layer and then forming recesses, that serve as phase shift portions, in an underlying layer below said light-shielding layer at least a part of where said light-shielding layer is removed, said phase shift mask manufacturing method comprising the steps of: processing said light-shielding layer into a light-shielding pattern having said predetermined pattern;forming a resist film on said light-shielding pattern;performing writing on said resist film based on writing data and developing said resist film, thereby forming a resist pattern; andetching said underlying layer using said light-shielding pattern and said resist pattern as a mask, thereby forming said recesses in said underlying layer,wherein said writing data includes a portion where pattern data corresponding to at least the two recesses adjacent to each other through a light-shielding portion of said light-shielding pattern are combined into one pattern data.

4. A phase shift mask manufacturing method according to claim 3, wherein said underlying layer is said transparent substrate.