In various embodiments, the present invention relates to phase-change memory cells, and more particularly to the formation of heating and cooling elements in conjunction with a phase-change memory cell.
Phase-change memory cells store information via changes in their resistivity characteristics. This is accomplished by, e.g., melting a phase-change material (PCM) such as Ge2Sb2Te5 (GST), and then either rapidly cooling the material so as to leave that material in an amorphous, high-resistive state or slowly cooling the material so as to leave it in a crystalline, low-resistive state. Each material state corresponds to a different binary (zero or one) data value.
Embodiments of the present invention include methods for forming a phase-change memory cell for improved heating and cooling by forming an integral heating element and an integral cooling element. The heating mechanism may be implemented by implanting one or more elemental species in the material on which the PCM is positioned, which may be combined with a technique for confining the PCM to a smaller volume in the area of heating. The cooling mechanism may be implemented by minimizing the volume of the PCM to be cooled and providing a metal (e.g., tungsten) heat sink on top that also acts as an etch stop during formation of the upper contact.
In an aspect, embodiments of the invention feature a memory cell including or consisting essentially of a current-steering device, a phase-change material disposed over the current-steering device, and, disposed between the current-steering device and the phase-change material, an element for increasing heat transfer to the phase-change material upon application of a voltage to the memory cell. The current-steering device, the phase-change material, and the element cooperate to store data. Application of a voltage across the current-steering device results in heating of the phase-change material, and, depending on its cooling rate, the phase-change material acquires either a polycrystalline or an amorphous material state, each material state corresponding to a different binary (zero or one) data value.
The element may include or consist essentially of a layer having a resistance larger than the resistance of at least a portion of the current-steering device. The element may include one or more implanted elemental species, e.g., oxygen, nitrogen, and/or germanium. The current-steering device may include or consist essentially of a diode. The phase-change material may include or consist essentially of an alloy of germanium, antimony, and tellurium.
In another aspect, embodiments of the invention feature a method of forming a memory cell. A current-steering device is provided, as is a phase-change material thereover. An element for increasing heat transfer to the phase-change material upon application of a voltage to the memory cell is provided between the current-steering device and the phase-change material. The element may be provided by ion implantation of at least one elemental species. The elemental species may include or consist essentially of oxygen, nitrogen, and/or germanium.
In yet another aspect, embodiments of the invention feature a memory cell including or consisting essentially of a current-steering device, a cooling element disposed over the current-steering device, and a phase-change material disposed over the current-steering device and around at least a portion of the cooling element. The cooling element may include or consist essentially of a material having a higher thermal conductivity than the thermal conductivity of the phase-change material. The cooling element may include or consist essentially of a non-phase-change material, e.g., tungsten or diamond.
In a further aspect, embodiments of the invention feature a method of forming a memory cell. A current-steering device is provided. A volume of phase-change material disposed around a core region is provided over the current-steering device, and a cooling element is provided within the core region. The cooling element may include or consist essentially of a material having a higher thermal conductivity than the thermal conductivity of the phase-change material. The cooling element may include or consist essentially of a non-phase-change material, e.g., tungsten or diamond.
In another aspect, embodiments of the invention feature a memory cell including or consisting essentially of a current-steering device, a first phase-change material disposed over the current-steering device, a first breakdown layer disposed between the current-steering device and the first phase-change material, a second phase-change material disposed over the first phase-change material, and a second breakdown layer disposed between the first phase-change material and the second phase-change material. The first and/or the second breakdown layer may include or consist essentially of a dielectric material. The first and/or the second breakdown layer may include a breach therethrough. The first and second phase-change materials may be different.
In yet another aspect, embodiments of the invention feature a method of forming a memory cell. A current-steering device is provided, as is a first phase-change material thereover. A first breakdown layer is provided between the current-steering device and the first phase-change material. A second phase-change material is provided over the first phase-change material, and a second breakdown layer is provided between the first phase-change material and the second phase-change material. A first breach may be formed in the first breakdown layer by applying a voltage across the first breakdown layer. A second breach may be formed in the second breakdown layer by applying a voltage across the second breakdown layer.
In the drawings, like reference characters generally refer to the same parts throughout the different views. Also, the drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. In the following description, various embodiments of the present invention are described with reference to the following drawing, in which:
The process for fabricating deposited-material diodes on a silicon substrate is well known to those skilled in the art. Generally speaking and referencing
An approximately 50 Angstrom (Å) barrier liner layer of titanium (Ti) followed by approximately 100 Å of titanium nitride (TiN) may be deposited followed by an approximately 20-second rapid thermal anneal (RTA) at approximately 670° C. to form a metal-semiconductor alloy (e.g., a silicide). Tungsten (and/or any one or more other metals) contact material may be deposited over substrate 100, which may then be polished (e.g., by chemical-mechanical polishing (CMP)) to leave the cups filled with metal contact plugs. At this point, those diodes on which the phase-change cells are not to be formed may be patterned and masked such that the tungsten may be etched away (e.g., by peroxide wet etch which will stop on the TiN liner) above the diodes that will receive PCM material.
In one embodiment, dielectric layer 108 (i.e., a layer including or consisting essentially of a dielectric material such as silicon nitride) is next deposited conformally to build a sidewall spacer about 28 nm thick. This may be then etched back to remove the dielectric layer 108 on the wafer surface and at the bottom of the cups to leave the sidewall spacer in place (this is well understood by those skilled in the art, particularly by those skilled in the art of MOS transistor gate formation for those gates formed with sidewall spacers). Next, a breakdown layer 109 (i.e., a layer including or consisting essentially of a dielectric material such as SiO2) may be deposited either by atomic layer deposition (ALD) or by sputtering (or other deposition techniques). The cup may then be filled by a blanket deposition (e.g., by sputtering) of the PCM material 110 (e.g., a layer including or consisting essentially of GST) and this film may be polished (e.g., by CMP with a tungsten polish) to remove all of the PCM material 110 except that within the cups. A top contact 112 may be formed by depositing, e.g., a thin layer of amorphous carbon as a barrier layer to the GST in the cups followed by top metal deposition, which is then patterned and etched to remove exposed top metal (and exposed amorphous carbon).
In one embodiment of the present invention, a heating element is added to the memory cell. To form a heating element to contact the PCM, a shallow I2 implant 107 of an elemental species such as oxygen, nitrogen, and/or germanium may be performed to increase the resistance at the diode-PCM junction; that is to say just at the top of the diode 103 where it is closest to the PCM 110. In this way, the PCM may be heated more effectively when the storage location is to be altered (i.e., data is to be written).
In another embodiment of the present invention, an improved cooling element is added to the memory cell. At the point of GST deposition, the GST film may be deposited conformally, but this film may be made thin so as to not fill the volume of the cups. The remainder of the cup volume may be filled with a material 111 that is known to be a good conductor of heat. When the GST film is polished, a center core of the heat-conductive material 111 may remain in the center of the cup surrounded by the GST layer. In this way, heat from the GST volume may be better drawn away and into the top contact 112 where it will be dissipated. This non-phase-change heat-conductive material may include or consist essentially of tungsten, another metal, a dielectric, or an insulator such as diamond, e.g., chemical-vapor deposited (CVD) diamond (in this latter case, the current path will be through the PCM material sidewalls to the top conductor). In another embodiment, the core 111 is a conductor of higher resistivity and thereby helps the forming of the double BDL-confined GST regions. Furthermore, by reducing the volume of the GST material in this way, the heating, when it occurs, may be concentrated in a smaller volume of GST material, limiting the volume of material that experiences the phase change. Limiting the volume of the PCM in this way may increase its switching speed.
In another embodiment of the present invention, as depicted in
Activation of the PCM memory cell depicted in
Memory devices incorporating embodiments of the present invention may be applied to memory devices and systems for storing digital text, digital books, digital music (such as MP3 players and cellular telephones), digital audio, digital photographs (wherein one or more digital still images may be stored including sequences of digital images), digital video (such as personal entertainment devices), digital cartography (wherein one or more digital maps can be stored, such as GPS devices), and any other digital or digitized information as well as any combinations thereof. Devices incorporating embodiments of the present invention may be embedded or removable, and may be interchangeable among other devices that can access the data therein. Embodiments of the invention may be packaged in any variety of industry-standard form factor, including Compact Flash, Secure Digital, MultiMedia Cards, PCMCIA Cards, Memory Stick, any of a large variety of integrated circuit packages including Ball Grid Arrays, Dual In-Line Packages (DIPs), SOICs, PLCC, TQFPs and the like, as well as in proprietary form factors and custom designed packages. These packages may contain just the memory chip, multiple memory chips, one or more memory chips along with other logic devices or other storage devices such as PLDs, PLAs, micro-controllers, microprocessors, controller chips or chip-sets or other custom or standard circuitry.
The terms and expressions employed herein are used as terms and expressions of description and not of limitation, and there is no intention, in the use of such terms and expressions, of excluding any equivalents of the features shown and described or portions thereof. In addition, having described certain embodiments of the invention, it will be apparent to those of ordinary skill in the art that other embodiments incorporating the concepts disclosed herein may be used without departing from the spirit and scope of the invention. Accordingly, the described embodiments are to be considered in all respects as only illustrative and not restrictive.
This application claims priority to and the benefit of, and incorporates herein by reference in its entirety, U.S. Provisional Patent Application No. 61/106,420, which was filed on Oct. 17, 2008.
Number | Date | Country | |
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61106420 | Oct 2008 | US |