Tellurides

Industry

CPC
H01L45/144

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/144Tellurides

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including a memory element between wiring layers and...
- Patent number 11,683,942
- Issue date Jun 20, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with a phase change layer and particula...
- Patent number 11,678,593
- Issue date Jun 13, 2023
- Kioxia Corporation
- Katsuyoshi Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,672,132
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Tae Hong Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,672,131
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Yumin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory cell
- Patent number 11,653,579
- Issue date May 16, 2023
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with double protective liner
- Patent number 11,647,638
- Issue date May 9, 2023
- Intel Corporation
- Anna Maria Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and operating method thereof
- Patent number 11,615,841
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Bilal Ahmad Janjua
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device
- Patent number 11,616,197
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Ja Bin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory arrays, and methods of forming the same
- Patent number 11,616,098
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Lingming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable device with chalcogen-containing layer
- Patent number 11,600,772
- Issue date Mar 7, 2023
- Kioxia Corporation
- Hiroki Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 11,600,665
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multitier arrangements of integrated devices, and methods of formin...
- Patent number 11,600,666
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector and non-volatile storage device
- Patent number 11,600,773
- Issue date Mar 7, 2023
- Kioxia Corporation
- Toshihiko Nagase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with improved recovery from element segregation
- Patent number 11,587,978
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material for resistive random access memory
- Patent number 11,588,102
- Issue date Feb 21, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,587,977
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Dong-Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,575,019
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory array
- Patent number 11,574,957
- Issue date Feb 7, 2023
- Micron Technology, Inc.
- Anna Maria Conti
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned cross-point phase change memory-switch array
- Patent number 11,563,055
- Issue date Jan 24, 2023
- Micron Technology, Inc.
- Jong Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,563,173
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesis and use of precursors for ALD of group VA element contain...
- Patent number 11,542,600
- Issue date Jan 3, 2023
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION
- Publication number 20240196766
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20240074337
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Bit Storage Device Using Phase Change Material
- Publication number 20240016071
- Publication date Jan 11, 2024
- Toshiba Global Commerce Solutions Holdings Corporation
- Timothy Crockett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20240016072
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ULTRA-THIN PCM CELL
- Publication number 20240008374
- Publication date Jan 4, 2024
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240008375
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...
- Publication number 20230422643
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230422642
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
- Publication number 20230422644
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230413691
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...
- Publication number 20230403956
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin I WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND...
- Publication number 20230403954
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE
- Publication number 20230402095
- Publication date Dec 14, 2023
- SK HYNIX INC.
- Jong Ho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint Memory
- Publication number 20230337559
- Publication date Oct 19, 2023
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING
- Publication number 20230301207
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20230301209
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Hiroyuki ODE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE
- Publication number 20230292637
- Publication date Sep 14, 2023
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT
- Publication number 20230284543
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE NON-VOLATILE MEMORY
- Publication number 20230284460
- Publication date Sep 7, 2023
- KIOXIA Corporation
- Tomoki CHIBA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, METHOD FOR CONFIGURING MEMORY CELL IN N-BIT MEMORY U...
- Publication number 20230263078
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...
- Publication number 20230263080
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...
- Publication number 20230263079
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING OVONIC THRESHOLD SWITCH SELECTORS USING MICROWAVE...
- Publication number 20230247843
- Publication date Aug 3, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Oleksandr MOSENDZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVONIC THRESHOLD SWITCH SELECTORS WITH HIGH-CONDUCTIVITY CURRENT SP...
- Publication number 20230232639
- Publication date Jul 20, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Oleksandr MOSENDZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BRIDGE CELL PHASE CHANGE MEMORY
- Publication number 20230200266
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programming Current Control for Artificial Intelligence (AI) Devices
- Publication number 20230189536
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS
- Publication number 20230189672
- Publication date Jun 15, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE
- Publication number 20230189667
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Memory device including a memory element between wiring layers and...

Semiconductor memory device with a phase change layer and particula...

Variable resistance memory device

Electronic synaptic device and method for manufacturing same

Semiconductor device and method of forming the same

Memory device and method of manufacturing the same

Non-volatile memory

Phase-change memory cell

Memory device with double protective liner

Nonvolatile tunable capacitive processing unit

Memory device

Electronic device

Memory device and operating method thereof

Variable resistance memory device

Three-dimensional memory arrays, and methods of forming the same

Resistance variable device with chalcogen-containing layer

Cross-point memory and methods for fabrication of same

Multitier arrangements of integrated devices, and methods of formin...

Selector and non-volatile storage device

Phase change memory with improved recovery from element segregation

Semiconductor material for resistive random access memory

Memory device and method of manufacturing the same

Semiconductor device

Three-dimensional memory array

Self-aligned cross-point phase change memory-switch array

Semiconductor memory device including phase change material layers...

PCM cell with resistance drift correction

Synthesis and use of precursors for ALD of group VA element contain...

Tapered memory cell profiles

Patents Applicationslast 30 patents

PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION

Boron Surface Passivation of Phase Change Memory Material

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

MEMORY DEVICE AND METHOD OF MAKING THE SAME

Multi-Bit Storage Device Using Phase Change Material

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

VERTICAL ULTRA-THIN PCM CELL

MEMORY DEVICE AND FABRICATION METHOD THEREOF

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...

PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND...

SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE

SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint Memory

PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING

SEMICONDUCTOR STORAGE DEVICE

PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE

PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT

VARIABLE RESISTANCE NON-VOLATILE MEMORY

MEMORY DEVICE, METHOD FOR CONFIGURING MEMORY CELL IN N-BIT MEMORY U...

CONFINED PHASE-CHANGE MEMORY CELL WITH SELF-ALIGNED ELECTRODE AND R...

IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...

METHOD OF MAKING OVONIC THRESHOLD SWITCH SELECTORS USING MICROWAVE...

OVONIC THRESHOLD SWITCH SELECTORS WITH HIGH-CONDUCTIVITY CURRENT SP...

BRIDGE CELL PHASE CHANGE MEMORY

Programming Current Control for Artificial Intelligence (AI) Devices

PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE