Various embodiments relate generally to a physical vapor deposition tile arrangement and a physical vapor deposition arrangement.
A planar magnetron usually includes a magnetic system, a cooling system to dissipate the heat of the a physical vapor deposition, or “sputtering” process, and a target. The magnetron target is typically indirectly cooled by the cooling system, wherein the target is pressed against a heat sink which has water flowing through it. In some applications, the target can be cooled directly by the cooling system. In still other processes it may be necessary that the target material is not cooled and thus the target reaches a much higher temperature during the sputtering process. These processes may use the higher target temperature to obtain, for example, a more stable sputter process by reducing the formation of particles or “nodules” on the target surface. In high target temperature applications, the target is subject to thermal expansion. This thermal expansion may cause movement or slippage of the target. In the case that the target is composed of a plurality of adjacent parts, for example tiles, the thermal expansion can cause gaps between the tiles. These gaps expose the material under or behind the target to ion bombardment, which leads to contamination of the a sputtered films being produced in the a physical vapor deposition process.
In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together.
In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. In the following description, various embodiments of the invention are described with reference to the following drawings, in which:
The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the invention may be practiced.
The word “exemplary” is used herein to mean “serving as an example, instance, or illustration”. Any embodiment or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments or designs.
The word “over” used with regards to a deposited material formed “over” a side or surface, may be used herein to mean that the deposited material may be formed “directly on”, e.g. in direct contact with, the implied side or surface. The word “over” used with regards to a deposited material formed “over” a side or surface, may be used herein to mean that the deposited material may be formed “indirectly on” the implied side or surface with one or more additional layers being arranged between the implied side or surface and the deposited material.
The current disclosure provides for a magnetron and a target carrier for uncooled targets which are well suited for both narrow and wide targets.
The current disclosure provides a physical vapor deposition target-tile carrier. According to various embodiments, it is possible to provide a physical vapor deposition tile system that prevents gaps from forming between the tiles due to thermal cycling.
According to an embodiment, a physical vapor deposition tile arrangement 100 containing a plurality of physical vapor deposition tiles arranged next to each other and a resilient structure configured to press the plurality of physical vapor deposition tiles together is provided.
According to an embodiment, the physical vapor deposition tile arrangement may be configured as illustrated in
According to an embodiment, the physical vapor deposition tile arrangement may be configured as illustrated in
According to an embodiment, the physical vapor deposition tile arrangement may be configured as illustrated in
According to an embodiment, at least one of the physical vapor deposition tiles may be composed of a material to be deposited on a substrate. Some physical vapor deposition target tile materials may include, e.g.: ITO, ZnO, ZnTe, CdS, however, the physical vapor deposition target-tile carrier may be configured to accommodate any type of target tile necessary for a given application.
According to an embodiment, the target tile may have a central portion which may be thicker than an edge region.
According to an embodiment, carrier 202 may have a recess 206 and target 200 may be partially received in the recess. In this case the target can be incorporated into the recess 206 until the thickness of the edge region and the remainder of the target 200 may extend out of the recess.
According to an embodiment, the plurality of physical vapor deposition tiles may be sputter target tiles. The sputter target tiles may be composed of one or more of the following: gold, silver, titanium, tantalum, zinc, tin, at least one oxide or di-oxide, at least one nitride or di-nitride, or any other material with the desired characteristic for a given application. In various embodiments, the sputter target tiles may be composed of one or more of the following materials: ITO, ZnO, ZnTe, CdS.
According to an embodiment, the resilient structure may be arranged at an edge of the physical vapor deposition tiles as illustrated in
According to an embodiment, the resilient structure may be at least one spring, wherein the spring may have a stiffness in the range from about 1 N/mm to about 15 N/mm, e.g. in the range from about 3 N/mm to about 9 N/mm.
According to an embodiment, the resilient structure may be in physical contact with only one side of physical vapor deposition tile as illustrated, for example, in
According to an embodiment, it is possible to marginalize or eliminate the gaps formed due to thermal cycling when multiple adjacent target tiles are used. As shown in
According to an embodiment, as illustrated in
According to an embodiment, as illustrated in
According to an embodiment, as illustrated in
According to an embodiment, as illustrated in
According to an embodiment, the pressure distribution structure may be a pressure distribution rod 704, as illustrated in
According to an embodiment, the pressure distribution structure may be formed from, for example, from one or more of the following materials: one or more non-magnetic steels or e.g. Mo. Furthermore, a material having low or even no ferromagnetism and/or low thermal conductivity, in order to avoid a too high heat emission to the springs may be provided in this case. In various embodiments, a soft or flexible material may be provided. Such a material may e.g. include an austenitic steel, such as e.g. X2CrNiMo171-12-2 (1.4404), or a titanium alloy such as e.g. Ti3Al.
According to an embodiment, the physical vapor deposition tile arrangement contains a plurality of physical vapor deposition tiles 900 arranged next to each other; a resilient structure configured to press the plurality of physical vapor deposition tiles 900 together; and a tile holding structure 902 configured to hold the plurality of physical vapor deposition tiles 900 may be configured as illustrated in
According to an embodiment, the resilient structure is configured to provide pressure to the plurality of physical vapor deposition tiles to overcome the holding force provided by the tile holding structure to hold the plurality of physical vapor deposition tiles in a holding position.
In a further embodiment, a physical vapor deposition arrangement containing a physical vapor deposition process chamber; a physical vapor deposition tile arrangement with a plurality of physical vapor deposition tiles arranged next to each other and a resilient structure configured to press the plurality of physical vapor deposition tiles together.
According to an embodiment, as illustrated in
According to an embodiment, physical vapor deposition arrangement 1004 may further include a cooling structure 1006, where the carrier 1002 is located between the target 1000 and the cooling structure 1006.
According to an embodiment, the physical vapor deposition arrangement 1004 may be a sputter process chamber.
According to an embodiment, the physical vapor deposition arrangement 1004 may be a magnetron.
According to an embodiment, the magnetron may further comprise a magnetic structure 1008, wherein carrier 1002 is located between the magnet structure 1008 and the target 1000.
According to an embodiment, the physical vapor deposition arrangement 1004 may be a planar magnetron arranged for sputtering processes without the use of electromagnetic radiation in the microwave spectrum.
According to an embodiment, mounting structures 1014 may be springs (not shown in
According to an embodiment, mounting structures 1014 may be spring clamps.
Thus, according to an embodiment, a method of mounting a plurality of physical vapor deposition tiles in a physical vapor deposition process chamber is provided. The method may involve, in 1100, arranging the plurality of physical vapor deposition tiles in the physical vapor deposition process chamber next to each other; and, in 1102, arranging a resilient structure relative to the plurality of physical vapor deposition tiles to press the plurality of physical vapor deposition tiles together.
The method may involve, in 1200, arranging the plurality of physical vapor deposition tiles in the physical vapor deposition process chamber next to each other; and, in 1202, arranging a resilient structure relative to the plurality of physical vapor deposition tiles to press the plurality of physical vapor deposition tiles together. The resilient structure used to press the plurality of physical vapor deposition tiles together may be biased after arranging the plurality of physical vapor deposition tiles in the physical vapor deposition process chamber to account for expansion and contraction of the tiles due to thermal cycling during the sputtering process (in 1206).
The method may involve, in 1300, arranging the plurality of physical vapor deposition tiles in the physical vapor deposition process chamber next to each other; and, in 1302, arranging a resilient structure relative to the plurality of physical vapor deposition tiles to press the plurality of physical vapor deposition tiles together. The resilient structure used to press the plurality of physical vapor deposition tiles together may be biased while arranging the plurality of physical vapor deposition tiles in the physical vapor deposition process chamber to account for expansion and contraction of the tiles due to thermal cycling during the sputtering process (in 1306).
While the invention has been particularly shown and described with reference to specific embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is thus indicated by the appended claims and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced.
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