This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2018-026797, filed on Feb. 19, 2018; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a plasma actuator and a surface cleaning device.
Examples of an active species generated by discharging in the atmosphere include negative ions such as OH radicals, ozone, and O2−. Among them, the OH radicals have a high redox potential of 2.80 ev, so that a purification capability to the air is large. However, the OH radicals are active but have a short life span. Therefore, there is considered a method of purifying the air or the like using the OH radicals contained in a water cluster.
A plasma induced flow is an air flow generated by applying a high voltage of a high frequency between electrodes which are separated by a dielectric. Plasma in the plasma induced flow draws an attraction as a new cleaning method instead of catalysis and an absorbent.
As a discharging structure for generating an active species, there is employed a point discharging structure and a mesh discharging structure. In addition, there is proposed a device in which electrodes generating the plasma induced flow are stacked and the air is taken in by the plasma induced flow so as to improve the processing efficiency.
However, in the method of the conventional technique, there is a need to secure a certain distance from a discharge point to a processing object. Therefore, there is a possibility that the OH radicals having 1 ms life span in the atmosphere (that is, a diffusion life of about several mm from the discharge point) is not possible to be effectively used. It cannot be said that the discharging structure of the conventional technique can effectively use the OH radicals with efficiency.
Hereinafter, the description will be given about a plasma actuator and a surface cleaning device according to embodiments with reference to the drawings. The components attached with the same symbol represent the same component. Further, the drawings are given schematically or conceptually, and a relation between thickness and width of the respective portions and a ratio coefficient of sizes between the portions may not be illustrated in the exactly actual size. In addition, even in a case where the same portion is illustrated, the dimension and the ratio coefficient may be differently illustrated in the drawings.
According to one embodiment, a plasma actuator includes an electrode member, an application electrode, a ground electrode, and a supporting member. The electrode member has a first surface facing a processing object and a second surface of an opposite side of the first surface. The application electrode is provided in the first surface. The ground electrode is provided in the second surface or an inner portion of the electrode member. The supporting member is provided in at least one of the electrode member and the application electrode to form a processing space between the processing object and the electrode member. The supporting member is capable of abutting on the processing object.
A surface cleaning device 20 includes a plasma actuator 10 and an AC power source 30.
As illustrated in
The surface cleaning device 20 generates plasma in the processing space 24 (a plasma generating region A described below) to clean the surface of the processing object 40. The processing object 40 is preferably made of an insulating material such as resin, glass, or rubber.
Herein, for the convenience of explanation, +X direction, −X direction, +Y direction, −Y direction, +Z direction, and −Z direction will be defined. +X direction, −X direction, +Y direction, and −Y direction are directions substantially along the plane, for example. −X direction is a direction opposite to +X direction. In the embodiment, +X direction and −X direction represent “directions along the surface of the processing object”, for example. +Y direction is a direction intersecting with +X direction (for example, a direction which is substantially orthogonal). −Y direction is a direction opposite to +Y direction. +Z direction is a direction intersecting with +X direction and +Y direction (for example, a direction which is substantially orthogonal) and, for example, a direction substantially facing vertically upward. −Z direction is a direction opposite to +Z direction and, for example, a direction substantially facing vertically downward. As illustrated in
First, the plasma actuator 10 will be described.
The plasma actuator 10 includes the electrode member 11, an application electrode 12, a ground electrode 13, and the supporting member 14. Further, in the explanation of the drawing, the supporting member 14 may be described separated from the plasma actuator 10.
The electrode member 11 is a dielectric substrate. The electrode member 11 is disposed, for example, along XY plane. In the electrode member 11, the application electrode 12 and the ground electrode 13 are provided. Examples of a material of the electrode member 11 include quartz, silicon rubber, and kapton (a type of polyimide). For example, the electrode member 11 is preferably about 0.5 mm thick, but the present embodiment is not limited thereto. The shape of the electrode member 11 is preferably an approximate cuboid, but may be formed in other shapes such as an approximate elliptical shape.
The application electrode 12 is disposed on a surface of the electronic member 11 (also referred to as a first surface) at a side in −Z direction of the electrode member 11 (that is, a surface facing the processing object). As illustrated in
On a surface of the application electrode 12 at a side in direction of the application electrode 12, an insulating material 25 may be coated. Such a configuration is to prevent that the application electrode 12 is in contact with the processing object 40 and discharged.
The ground electrode 13 is disposed on a surface of the electronic member 11 (also referred to as a second surface) at a side in +Z direction of the electrode member 11. In other words, the electrode member 11 is located between the ground electrode 13 and the application electrode 12.
The expression “located between” means that the electrode member 11 is located in the middle between the application electrode 12 and the ground electrode 13 when viewed from +Z direction. In addition, this expression contains that the electrode member 11 is disposed to be interposed by the application electrode 12 and the ground electrode 13. In addition, if the application electrode 12, the electrode member 11, the ground electrode 13 are disposed in this order when viewed from −Z direction, this expression also contains that the application electrode 12 and the installation electrode 13 are disposed to be deviated in +X direction.
When viewing the application electrode 12 and the ground electrode 13 from −Z direction, an end of the ground electrode 13 in −X direction side is preferably disposed to be almost matched with an end of the application electrode 12 in +X direction side. In addition, a width of the ground electrode 13 in +X direction is preferably larger than a width of the application electrode 12 in X direction.
The ground electrode 13 has been described to be disposed on the surface of the electrode member 11, but may be disposed in an inner portion of the electrode member 11. In addition, a groove is provided in the electrode member 11, and the ground electrode 13 may be disposed at the groove.
The surface of the ground electrode 13 is coated with the insulating material 25. The insulating material 25 is a dielectric film to suppress a reverse discharge of the ground electrode 13. Examples of the insulating material 25 include a silicon oxide film, an organic insulating film, an insulating silicon filler, or a polyimide tape coating.
When the gas is brought into contact with the ground electrode 13, a reverse flow occurs due to the reverse discharge. Therefore, a plasma induced flow F (described below) may be suppressed, or an abnormal discharge (overheat) may occur in a fine space. In order to suppress these problems, the surroundings of the insulating material 25 are desirably coated with the insulating material 25. Note that the insulating material 25 coating the ground electrode 13 will be omitted except
The application electrode 12 and the ground electrode 13 are configured by a conductor such as metal. For example, a metallic material such as aluminum, brass, copper, or stainless steel may be used. The application electrode 12 and the ground electrode 13 may be formed as a thin gold (Au) film on the electrode member 11 by sputtering or plating for example.
The application electrode 12 and the ground electrode 13 are illustrated only by one, but the application electrode 12 and the ground electrode 13 may be provided in plural. The shape of the application electrode 12 and the ground electrode 13 is not limited to the approximate rectangular shape as illustrated in
The supporting member 14 is disposed in any position which does not hinder the plasma from being generated. For example, the supporting member may be disposed on a surface of the electrode member 11 at a side in −Z direction, a side surface of the electrode member 11, or a surface of the application electrode 12 or the like. As illustrated in
The supporting member 14 does not need to be integrally formed to the electrode member 11 and the application electrode 12 which abut on the supporting member 14, as long as there is no gap between the electrode member 11 and the application electrode 12. For example, the supporting member 14 may be formed using a screw with respect to the electrode member 11 and the application electrode 12, or may be sealed with silicon.
As a material of the supporting member 14, an insulating material such as resin and rubber is preferably used. A portion where the supporting member 14 abuts on the processing object 40 is preferably formed using a soft insulating material such as rubber and silicon in order to prevent a generated active species from leaking out of the processing space 24. In addition, the supporting member 14 at a side near the processing object and the opposite side of the supporting member 14 may be formed using different insulating materials. In addition, if the generating active species does not leak out of the processing space 24, there may be provided a member in a portion where the supporting member 14 and the processing object 40 abut.
In addition, the supporting member 14 may be stretchable in Z direction. In this case, there may be provided a motor, a slide rail, a pneumatic cylinder or the like to drive the supporting member 14 in Z direction. A distance between the application electrode 12 and the processing object 40 can be adjusted by stretching the supporting member 14. The supporting member 14 has been described as a configuration of the plasma actuator 10. However, the supporting member may be not included in the configuration of the plasma actuator 10.
The AC power source 30 is electrically connected to the application electrode 12 and the ground electrode 13, and applies an AC voltage between the application electrode 12 and the ground electrode 13.
Next, an operation of the surface cleaning device 20 will be described in detail.
First, the surface cleaning device 20 brings the supporting member 14 to abut on a target surface of the processing object 40. The bringing of the supporting member 14 to abut on the target surface may be performed manually by a user, or may be performed using a drive device such as a manipulator.
Next, the high-voltage AC power source 30 of the surface cleaning device 20 applies an AC high voltage (for example, 6 kV sinusoidal voltage of 10 kHz) between the application electrode 12 and the ground electrode 13.
When the AC voltage is applied, Plasma A is generated in a region depicted by a broken line of
As illustrated in
In the surface cleaning device 20 according to the present embodiment, the application electrode 12 is disposed to face the processing object, so that Plasma A can be generated near the processing object. Therefore, the OH radicals having an oxidization performance stronger than ozone but a short life span can act on the processing object with efficiency.
In the surface cleaning device 20 according to the present embodiment, the plasma actuator 10 includes the supporting member 14 abutting on the processing object as illustrated in
Note that the surface cleaning device according to the present embodiment has been described such that the AC power source is provided in the plasma actuator 10 equipped with the supporting member 14. However, the plasma actuator 10 may be not provided with the supporting member 14.
This component will be explained using
The common components as those of the first embodiment will be omitted.
The surface cleaning device of the present embodiment includes a conduction checking electrode 23, a through hole 21, an ozone processing unit 22, and an exhaust pump 26, in addition to the surface cleaning device according to the first embodiment.
The conduction checking electrode 23 is provided in a portion where the supporting member 14 and the processing object 40 abut. With the conduction checking electrode 23, it is possible to check an insulation state of a processing target surface. The processing target surface is a surface of the processing object 40 facing the surface cleaning device. If the current applied to the application electrode 12 is prevented from flowing to the processing object 40, the plasma is hardly generated. Therefore, since the processing target surface is required to be insulated in principle, it is preferably to include the conduction checking electrode 23. The conduction checking electrode 23 may have a mechanism which stops the operation of the surface cleaning device.
Even if the processing object 40 is made of metal or in a conduction state, the processing object 40 can be used as long as satisfying following conditions:
The processing target surface does not fall to the ground (ground potential);
A distance between the application electrode 12 and the processing target surface (held by the supporting member 14) is larger than a distance between the application electrode 12 and the ground electrode 13;
The processing target surface is coated to be insulated, and thus the plasma is generated on a side of the ground electrode instead of a side of the processing target surface.
The surface cleaning device of the present embodiment may include a reception unit (not illustrated) which receives a signal of the conduction checking electrode 23. With the reception unit, the conduction checking electrode 23 can cause the reception unit to receive a signal indicating that the processing target surface is a conductor or an insulator. In a case where the processing target surface is indicated as a conductor, the operation of the surface cleaning device 20 can be stopped by transmitting a signal from the reception unit to a user or by connecting the reception unit to the power source of the surface cleaning device 20.
The through hole 21 is provided in the supporting member 14. With the through hole 21, as illustrated in
Furthermore, the gas moved by the plasma induced flow F can be moved from the processing space 24 to the outer side through the through hole 21b which is provided in the supporting member 14 existing in +X direction. Therefore, it is possible to easily take the air into the processing space 24 from the outer side.
The shape of the through hole 21 can allow the through hole 21a provided in the supporting member 14 in −X direction to pass through in one square shape as illustrated in
The ozone processing unit 22 may be equipped in the inner portion of the through hole 21 provided at the downstream side (+X direction) of the plasma induced flow F. Furthermore, the ozone processing unit 22 may be connected to the through hole 21, and thus provided on the outer side of the surface cleaning device. In the plasma discharge in the atmosphere, ozone is considerably generated. Therefore, in a device such as a surface processing device or a sanitizer using discharge, the ozone is needed to be separated normally in order not to affect on human bodies. However, with the ozone processing unit 22, the active species such as ozone and oxygen can be limited not to diffuse into the atmosphere.
The ozone processing unit 22 may also be configured to connect with the exhaust pump 26. The exhaust pump 26 can suck the gas in the processing space 24 through the ozone processing unit 22, and can discharge the gas into the outer side. Therefore, the ozone in the processing space 24 can be processed with efficiency. In addition, with the exhaust pump 26, it is possible to assist a flow of the plasma induced flow F. Therefore, the active species such as the OH radicals can act far away from the Plasma A. Since the gas in the processing space 24 can be discharged to the outer side, the air of the outer side can be supplied much more through an inlet port. As a result, it is possible to increase the generation of the OH radicals with more efficiency.
When the surface cleaning device according to the present embodiment is operated, Plasma A and the plasma induced flow F can be generated. A mechanism of generating the plasma induced flow F will be conceptually described using
Plasma A is generated from a ground electrode side of the application electrode 12 on the surface of the electrode member 11 in a direction of the ground electrode 13 by the AC high voltage from the high-voltage AC power source 30. The plasma A contains positive ions and electrons. The positive ions flow from the application electrode 12 in the direction of the ground electrode 13 on the surface of the electrode member 11. This flow comes into conflict with the atmosphere to generate the plasma induced flow F together with the gas stream surrounding the flow.
The electrons are accumulated on the surface of the electrode member 11 abutting on Plasma A to charge up the surface negatively. Therefore, the positive ions evenly flow in a direction on the surface of the electrode member 11 corresponding to a direction from the application electrode 12 to the ground electrode 13. Since the generated Plasma A is a thin surface plasma, the plasma induced flow F also becomes a surface stream which flows near the electrode member 11. In other words, by disposing the ground electrode 13 in a certain direction deviated from the application electrode 12, the plasma induced flow F flowing in the certain direction is generated.
As illustrated in
Further, in the present embodiment, the surface cleaning device has been described to include all the conduction checking electrode 23, the through hole 21, the ozone processing unit 22, and the exhaust pump 26. In addition, only the conduction checking electrode 23 may be provided, or only the through hole 21 may be provided. Likewise, the configuration may be appropriately selected. For example, in the surface cleaning device including the through hole 21 only in the supporting member 14 on a side near the application electrode (−X direction), the active species may be used to stay in the processing space 24. In addition, the ozone processing unit 22 has been provided in consideration of an influence on human bodies. However, the ozone processing unit 22 may be not provided under an environment where there is no need to consider such the influence.
The same portions as those of the second embodiment will be omitted.
In the surface cleaning device according to the third embodiment, two or more plasma actuators described in the first embodiment are aligned along the processing object. A distance between the application electrode 12 and the ground electrode 13 of one plasma actuator 10 is shorter than a distance between the application electrode 12 (of one plasma actuator) and the ground electrode 13 (of another plasma actuator adjacent to the one plasma actuator). The processing spaces 24 of the plasma actuators 10 adjacently positioned are disposed continuously. In addition, as illustrated in
The distance between the application electrode 12 and the ground electrode 13 is a distance between the closest ends thereof. For example, the distance is a distance connecting a portion of the application electrode 12 at a side near the ground electrode 13 and nearest to the ground electrode 13, and a portion of the ground electrode 13 at a side near the application electrode 12 and nearest to the application electrode 12. The configuration is similar even in a single surface cleaning device, or even between two or more surface cleaning devices.
The plasma induced flow F can flow serially among the plasma actuators 10 (adjacently positioned) by connecting the processing spaces 24 thereof. With this configuration, the processing space 24 can be made in a simple shape, and a sealing level of the processing space 24 can be increased. As a result, it is possible to suppress the active species from leaking out to the outer side on the way of flowing, and a concentration of the active species can be secured. At this time, the supporting member 14 of the plasma actuators 10 (adjacently positioned) in +X direction may not exist as illustrated in
In addition, as illustrated in
The surface cleaning device according to the third embodiment may be used to clean structures such as a desk, a chair, a floor, and a wall similarly to the surface cleaning according to the second embodiment. Furthermore, the surface cleaning device according to the third embodiment may also be used to clean a structure having a curved surface such as a ball. In addition, when being used, the surface cleaning device according to the third embodiment may be moved by the user or may be self-operated. When the user moves the surface cleaning device, the surface cleaning device may be operated at a remote place using a remote controller or the like. At this time, a reception device of the remote controller or the like may be provided at a position not hindering the operation of the surface cleaning device.
In the surface cleaning device according to the third embodiment, the application electrode 12 can be disposed near the processing object 40. Therefore, it is possible to use an active species having a short life span such as the OH radicals contained in Plasma A. In addition, the surface cleaning device can be provided in a wider range, and the active species can be suppressed from leaking out to the outer side. As a result, it is possible to provide the surface cleaning device capable of cleaning the processing object with more efficiency.
The same portions as those of the second embodiment will be omitted.
Since the distance between the application electrode 12 and the ground electrode 13 of one plasma actuator 10 is shorter than the distance between the application electrode 12 of one plasma actuator and the ground electrode 13 of another plasma actuator adjacent to the one plasma actuator, the plasma induced flow F cannot be reversely flown in the surface cleaning device. Description of this distance is the same as the third embodiment.
As illustrated in
The supporting member 14 provided in +X direction of the plasma actuator 10 is preferably provided such that the plasma actuator 10 and the processing object 40 do not directly abut on each other.
In the surface cleaning device according to the fourth embodiment, the plasma actuators 10 adjacently positioned is disposed to partially overlap, so that the operation region of the OH radicals can be dense with respect to the processing object. As a result, it is possible to clean the processing object with efficiency.
As illustrated in
Furthermore, the ozone processing unit 22 may be provided in the through hole 21. In addition, the exhaust pump 26 may be connected to the ozone processing unit 22.
In the surface cleaning device according to the fourth embodiment, the application electrode 12 and the processing object 40 can be disposed near, and Plasmas A generated in the plasma actuators 10 adjacently positioned can be disposed near. Therefore, an operation region of the OH radicals can be dense with respect to the processing object 40, and the OH radicals having a short life span contained in the Plasma A can directly act on the processing object 40. As a result, it is possible to clean the processing object with efficiency.
The same portions as those of the second embodiment will be omitted.
Alternatively, a space is provided to serve as the through hole 21.
In addition, while not illustrated in the drawing, by connecting the plasma actuators 10 facing with the variable connection member 27, a radius of the surface cleaning device 20 may be varied in accordance with a radius of the processing object 40. In addition, by using a mechanism rotating or making the surface cleaning device rotate in an axial direction, Plasma A can act widely on the processing object 40.
As illustrated in
An ozone processing chamber may be provided in the through hole 21, or to be connected from the through hole 21. The exhaust pump 26 can be connected to the ozone processing chamber.
In particular, in a case where the through hole 21 is provided, as illustrated in
The surface cleaning device according to the fifth embodiment may be used in test tubes or pipes, for example.
In the surface cleaning device according to the fifth embodiment, the application electrode 12 and the processing object 40 can be disposed near, and also the OH radicals having a short life span contained in the Plasma A can directly act on the processing object 40 such as a groove or a cylinder. As a result, it is possible to clean the processing object with efficiency.
As described above, while the OH radicals have a strong redox power and are suitable to the cleaning action, the life span is short to 1 ms. As a distance between the generation region of Plasma A and the processing object is increased, it takes a long time for the OH radicals to reach the processing object. Accordingly, it can be seen that a residual amount of the OH radicals is relatively reduced. As described above, since the plasma is generated from the end of the application electrode at a side near the ground electrode, the residual amount of the OH radicals is reduced as the distance between the application electrode and the processing object increased.
Therefore, it is difficult to make the OH radicals act directly on the processing object with efficiency using a device having a structure of the plasma actuator as the conventional technique.
On the other hand, in any of the surface cleaning devices according to the first to fifth embodiments described above, since the application electrode 12 exists to face the processing object, the Plasma A and the processing object can be disposed near, and the OH radicals can act on the processing object with efficiency. Therefore, it can be seen that all the surface cleaning devices according to the first to fifth embodiments are excellent cleaning devices capable of using the OH radicals directly on the processing object.
According to the surface cleaning device of at least any one of the embodiments described above, the Plasma actuator is configured such that the application electrode 12 faces the processing object. As a result, the Plasma A can be disposed near the processing object, and the OH radicals can act on the processing object with efficiency.
While certain embodiments have been described, these embodiments have been presented by way of examples only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Number | Date | Country | Kind |
---|---|---|---|
2018-26797 | Feb 2018 | JP | national |