Claims
- 1. A plasma cleaning method for removing aluminum-containing residues in a plasma treatment chamber, comprising:
- introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and
- performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing aluminum-containing residues on the interior surfaces.
- 2. The method of claim 1, wherein the cleaning gas mixture further comprises a fluorine-based gas.
- 3. The method of claim 1, wherein the chlorine-based gas comprises 10-25 % by volume of the cleaning gas.
- 4. The method of claim 2, wherein the fluorine-based gas comprises 2-10% by volume of the cleaning gas.
- 5. The method of claim 1, wherein the chlorine-based gas comprises Cl.sub.2, CCl.sub.4 HCl or mixtures thereof.
- 6. The method of claim 2, wherein the fluorine-based gas comprises NF.sub.3, SF.sub.6, a fluorocarbon or mixture thereof.
- 7. The method of claim 6, wherein the fluorocarbon comprises CF.sub.4, C.sub.2 F.sub.6 or mixture thereof.
- 8. The method of claim 1, wherein the cleaning gas further contains H.sub.2 O, H.sub.2 O.sub.2 O.sub.3 or mixture thereof.
- 9. The method of claim 2, wherein the chlorine-based gas and the fluorine-based gas comprise a chlorofluorocarbon gas.
- 10. The method of claim 1, wherein the plasma cleaning gas removes carbon of organic residues, metals, and metal oxides in the form of gas by-products.
- 11. The method of claim 1, wherein at least one of aluminum and copper in the residues is converted into a gaseous form via reaction with the chlorine in the plasma cleaning gas.
- 12. The method of claim 2, wherein at least one of oxides and tungsten in the residues is converted into a gaseous form via reaction with the fluorine of the plasma cleaning gas.
- 13. The method of claim 1, wherein the plasma treatment chamber is evacuated during the cleaning step.
- 14. The method of claim 13, wherein during the cleaning step an interior of the plasma treatment chamber is initially at a high pressure and then at a low pressure, the high pressure being greater than 25 mTorr and the low pressure being less than 25 mTorr.
- 15. The method of claim 14, wherein the high pressure is around 40 mTorr and the low pressure is around 10 mTorr.
- 16. The method of claim 1, wherein at least one by-product selected from the group consisting of AlCl.sub.3 CO, CO.sub.2 Cl.sub.2 CuCl, and WF.sub.5 is removed from the plasma treatment chamber when the interior surfaces of the chamber are contacted with the plasma cleaning gas.
- 17. The method of claim 1, wherein the residues are removed without opening the plasma treatment chamber.
- 18. The method of claim 1, further comprising a step of dry etching one or more layers on at least one wafer prior to the plasma cleaning step, the layers including at least one of a photoresist, metal film and oxide film, the dry etching causing residues to be deposited on interior surfaces of the plasma treatment chamber.
- 19. The method of claim 18, wherein the dry etch comprises a chlorine-based dry etch and residues of the chlorine-based dry etch are removed by the plasma cleaning gas without leaving by-products that will interfere with a dry etch performed after the plasma cleaning step and without generating particles which would reduce a yield of a subsequent dry etch.
- 20. The method of claim 1, wherein the residues are completely removed from the interior surfaces of the plasma treatment chamber and no by-products remain in the plasma treatment chamber after the plasma cleaning step is terminated.
- 21. A plasma cleaning method for removing metal-containing residues in a plasma treatment chamber, comprising:
- introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and
- performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing metal-containing residues on the interior surfaces.
- 22. The method of claim 21, wherein the metal-residues include aluminum, titanium, copper, tungsten or mixture thereof.
Parent Case Info
This application is a continuation of application Ser. No. 07/902,663, filed Jun. 22, 1992, now abandoned.
US Referenced Citations (12)
Foreign Referenced Citations (5)
Number |
Date |
Country |
0201016 |
Dec 1982 |
JPX |
0250185 |
Nov 1986 |
JPX |
61-250185 |
Nov 1986 |
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3-62520 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
902663 |
Jun 1992 |
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