Claims
- 1. An inductively coupled plasma reactor comprising:
- an electrode that is used to create a plasma;
- a reactor chamber;
- a power transfer window which shields the electrode from the reactor chamber;
- a chuck that is adapted to hold a wafer, which chuck is located in the reactor chamber;
- a shield which is located in the reactor chamber in the line of sight path between the wafer and the window in order to minimize the deposition of materials from a wafer onto the window; and
- wherein said shield is part of said power transfer window.
- 2. An inductively coupled plasma reactor comprising:
- an electrode that is used to create a plasma;
- a reactor chamber;
- a power transfer window which shields the electrode from the reactor chamber;
- a chuck that is adapted to hold a wafer, which chuck is located in the reactor chamber;
- a shield which is located in the reactor chamber in the line of sight path between the wafer and the window in order to minimize the deposition of materials from a wafer onto the window; and
- said shield is located substantially adjacent to said power transfer window.
Parent Case Info
This case is a continuation-in-part of U.S. patent application Ser. No. 08/985,730, filed on Dec. 5, 1997, entitled PLASMA REACTOR WITH A DEPOSITION SHIELD.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
3514391 |
Hablanian et al. |
May 1970 |
|
5804046 |
Sawada et al. |
Sep 1998 |
|
5837057 |
Koyama et al. |
Nov 1998 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
985730 |
Dec 1997 |
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