Claims
- 1. A semiconductor device which comprises:
- (a) a layer of patterned conductors formed on a substrate;
- (b) a porous dielectric layer disposed at least partially between at least one pair of said patterned conductors, said porous dielectric layer having a porosity of at least 20%, an average pore diameter of between 2 nm and 80 nm, and an OH concentration of less than 1.5 OH groups/nm.sup.2 of pore surface area.
- 2. The semiconductor device of claim 1, wherein said OH concentration of said porous dielectric layer is less than 0.5 OH groups/nm.sup.2.
- 3. The semiconductor device of claim 1, wherein said porous dielectric is comprised substantially of silicon dioxide.
- 4. The semiconductor device of claim 1, wherein halogen-containing groups are bonded to the pore surfaces of said porous dielectric, wherein said halogen-containing groups exist in a concentration of greater than 0.8 groups/nm.sup.2.
- 5. The semiconductor device of claim 4, wherein said halogen containing groups are comprised of atomic fluorine.
- 6. The semiconductor device of claim 1, further comprising a substantially solid cap layer deposited over said porous dielectric.
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a division of application Ser. No. 08/263,572, filed Jun. 23, 1994.
The following co-assigned U.S. patent applications are hereby incorporated herein by reference:
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
4652467 |
Brinker et al. |
Mar 1987 |
|
4987101 |
Kaanta et al. |
Jan 1991 |
|
5103288 |
Sakamoto et al. |
Apr 1992 |
|
5155576 |
Mizushima |
Oct 1992 |
|
Non-Patent Literature Citations (1)
Entry |
Hrubesh et al., "Dielectric Properties of Aerogels", J. Mater. Res., vol. 8,No. 7, Jul. 1993, pp. 1736-1741. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
263572 |
Jun 1994 |
|