Positive resist composition and pattern forming method using the same

Abstract

A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:

Description

Claims

1. A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and(B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:

2. The resist composition according to claim 1, wherein (A) the resin containing a repeating unit represented by formula (I) further contains a repeating unit represented by formula (A1):

3. The resist composition according to claim 2, wherein in the repeating unit represented by formula (A1), A1 represents a group containing an acetal or ketal group.

4. A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I′) and a repeating unit represented by formula (A1′); and(B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:

5. The resist composition according to claim 1, wherein (A) the resin containing a repeating unit represented by formula (I) further contains a repeating unit represented by formula (A2):

6. The resist composition according to claim 5, wherein in the repeating unit represented by formula (A2), A2 represents a group containing a cyclic carbon structure.

7. The resist composition according to claim 1, wherein (A) the resin containing a repeating unit represented by formula (I) contains a repeating unit having a lactone group or a repeating unit having an alicyclic group substituted by a hydroxyl group.

8. The resist composition according to claim 1, wherein (A) the resin containing a repeating unit represented by formula (I) is partially crosslinked by a crosslinking group capable of decomposing under an action of an acid.

9. The resist composition according to claim 1, wherein (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is selected from the group consisting of an oxime sulfonate and a diazodisulfone.

10. A pattern forming method, which comprises: forming a resist film from a resist composition according to claim 1; andexposing and developing the resist film.