Claims
- 1. A semiconductor wafer processing method, which comprises:subjecting a surface of the semi-conductor wafer to a chemical mechanical polishing step for planarizing an oxide; and cleaning the wafer surface of the semiconductor wafer by performing the following steps while continuously rotating the semiconductor wafer: rinsing with ozonized distilled water; etching the wafer surface with an HF solution; rinsing the wafer surface with ozonized distilled water; and drying the wafer surface with a gas mixture of isopropanol and nitrogen.
- 2. The method according to claim 1, which comprises increasing a speed rotating the semiconductor wafer during the step of drying the semiconductor wafer.
- 3. The method according to claim 1, which comprises storing the semiconductor wafer in a water bath between the chemical mechanical polishing step and the cleaning step.
- 4. A semiconductor wafer processing method, which comprises:subjecting a surface of the semiconductor wafer to a chemical mechanical polishing step for planarizing a layer of metal on the semiconductor wafer; and cleaning the wafer surface of the semiconductor wafer by performing the following steps while continuously rotating the semiconductor wafer: etching the water surface with an HF solution or an H2SO4 solution with HF and H2O2 additions; rinsing the wafer surface with ozonized distilled water; and drying the wafer surface with a gas mixture of isopropanol and nitrogen.
- 5. The method according to claim 4, which comprises increasing a speed rotating the semiconductor wafer during the step of drying the semiconductor wafer.
- 6. A method of cleaning a semiconductor wafer after chemical mechanical polishing, which comprises:placing a semiconductor wafer, following chemical mechanical polishing of a wafer surface thereof, for planarizing an oxide, into a process chamber equipped with a turntable for holding and rotating the semiconductor wafer; and cleaning the wafer surface, while continuously rotating the semiconductor wafer on the turntable, by; rinsing with ozonized distilled waters; etching the wafer surface with an HP solution; rinsing the wafer surface with ozonized distilled water; and drying the wafer surface With a gas mixture of isopropanol and nitrogen.
- 7. A method of cleaning a semiconductor wafer after chemical mechanical polishing, which comprises:placing a semiconductor wafer, following chemical mechanical polishing of a wafer surface thereof, for planarizing a layer of metal on the semiconductor wafer, into a process chamber equipped with a turntable for holding and rotating the semiconductor wafer; and cleaning the wafer surface, while continuously rotating the semiconductor wafer on the turntable, by: etching the wafer surface with an HF solution or an H2SO4 solution with HF and H2O2 additions; rinsing the wafer surface with ozonized distilled water; and drying the wafer surface with a gas mixture of isopropanol and nitrogen.
Priority Claims (1)
Number |
Date |
Country |
Kind |
100 52 762 |
Oct 2000 |
DE |
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CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of copending International Application No. PCT/EP01/11582, filed Oct. 8, 2001, which designated the United States and which was not published in English.
US Referenced Citations (13)
Foreign Referenced Citations (6)
Number |
Date |
Country |
198 01 360 |
Jul 1999 |
DE |
0 805 000 |
Nov 1997 |
EP |
0 905 747 |
Mar 1999 |
EP |
0 938 133 |
Aug 1999 |
EP |
09270412 |
Oct 1997 |
JP |
2000-003897 |
Jan 2000 |
JP |
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/EP01/11582 |
Oct 2001 |
US |
Child |
10/424173 |
|
US |