Patent Application
20200111892
This applicant claims foreign priority to European Application No. EP 18199227.2 filed Oct. 9, 2018, the content of which is incorporated by reference herein in its entirety.
The disclosed technology generally relates to semiconductor devices, and more particularly, to gate structures of semiconductor devices, and methods of forming the same.
A vertical field effect transistor (VFET) is a field effect transistor where the channel is oriented normal to the substrate. Owing to the vertically oriented channel structure, the gate length is not defined by the linewidth but instead by the thickness of the gate conductor layer. The source and drain regions of a vertical transistor device are vertically displaced in relation to each other. For these reasons, among others, vertical transistor devices enable formation a comparably large number of field effect transistors per area unit.
Some gate formation approaches involve conductive layer etch back (e.g., a tungsten layer), which may result in gate electrodes exhibiting a relatively large degree of surface roughness. Surface roughness may render control of the gate length difficult. Surface roughness may further lead to varying thickness and roughness of a subsequently formed isolation layer between the gate and top electrodes. An objective of the present disclosure is to provide a method for forming a gate for a semiconductor device which alleviates or at least reduces the afore-mentioned issue. Further and/or alternative objectives may be understood from the following.
According to an aspect of the present disclosure there is disclosed a method for forming a gate for a semiconductor device. The method includes providing a semiconductor structure comprising a substrate and a channel structure protruding above the substrate, forming a gate dielectric layer on the channel structure, forming a gate work function metal layer on the gate dielectric layer, depositing a sacrificial material of silicon to form a preliminary sacrificial gate fill structure, the preliminary sacrificial gate fill structure covering the work function metal and protruding by an initial height above the substrate, etching back an upper surface of the preliminary sacrificial gate fill structure to obtain a final sacrificial gate fill structure of a reduced height above the substrate, and replacing a sacrificial material of the final sacrificial gate fill structure with a conductive gate fill material by a conversion reaction, thereby forming a gate electrode for the channel structure.
By replacing the sacrificial material to form the gate electrode, the gate electrode may be formed with a relatively smooth upper surface. This is enabled by a combination of etch back of the silicon preliminary sacrificial gate fill structure and a conversion of the final sacrificial gate structure into a conductive gate fill structure.
The surface roughness which may result following etch back of a gate fill layer (as in the prior art) may be attributed to the considerable grain sizes of conductive materials typically used for gate fill (notably W). Etch back of silicon, in particular amorphous silicon (a-Si) or poly-crystalline silicon (polysilicon), does not result in a same degree of surface roughness. Hence, etch back of the silicon preliminary sacrificial gate fill structure can allow formation of a final sacrificial gate structure having a relatively smooth upper surface. The conversion reaction may then result in atoms of the final sacrificial gate structure being replaced by atoms of the conductive gate fill material. Thereby a conductive gate fill structure with a correspondingly smooth upper surface may be obtained. Meanwhile, the presence of the gate dielectric layer and the work function metal on the channel structure may counteract etching of the channel structure during the etch back.
The preliminary sacrificial gate may be formed to embed at least a channel region of the channel structure, at least partially. The final gate electrode may thus surround the channel region of the channel structure. This in turn allows for the gate electrode to be provide good electrostatic control.
The method may further comprise forming an insulating layer on the substrate (i.e. an upper surface thereof) prior to forming the gate dielectric layer and the gate work function metal layer.
By this the gate electrode may be isolated from the substrate by an insulating layer, which may form a bottom dielectric layer. Also the insulating layer may provide a further masking of the substrate from process conditions during the sacrificial material deposition and the conversion reaction.
The gate dielectric layer and the work function metal layer may be deposited on the channel structure and on an upper surface of the insulating layer. Hence, the gate dielectric layer and the work function metal layer may be deposited to cover both the channel structure and the upper surface of the insulating layer. The gate dielectric layer and the gate work function metal layer may be formed to cover at least a channel region of the channel structure.
The method may further comprise planarizing the deposited sacrificial material to form the preliminary sacrificial gate fill structure with a planarized upper surface prior to the etching back thereof. This may facilitate obtaining a final sacrificial gate fill structure with uniform height/thickness following the etching back.
Replacing the sacrificial material of the final sacrificial gate fill structure with a conductive gate fill material may include completely replacing the sacrificial material of the final sacrificial gate fill structure.
The gate electrode may hence be formed with no traces of the sacrificial material remaining in the conductive fill gate structure. In other words, the final sacrificial gate fill structure may be fully replaced by/converted into the conductive gate fill structure.
The sacrificial material may comprise amorphous silicon (a-Si) or polysilicon. These materials may be deposited free of pin-holes in an inexpensive and efficient manner using suitable deposition techniques, such as chemical vapor deposition (CVD).
The conductive material may comprise tungsten or molybdenum. Silicon materials (such as a-Si and polysilicon) may be readily converted into either tungsten or molybdenum by means of conversion reactions. Moreover, tungsten and molybdenum both enable forming of a gate electrode with good electrical properties.
Replacing the sacrificial material with the conductive material comprises a conversion reaction between the sacrificial material and a gas reactant in which an element of the sacrificial material is volatilized. Replacing the sacrificial material with the conductive material comprises a conversion reaction between the sacrificial material and a gas reactant in which an element of the gas reactant is converted to form the conductive fill material. Replacing the sacrificial material with the conductive material may comprise exposing the sacrificial material to a tungsten fluoride gas (such as tungsten hexafluoride) or a molybdenum fluoride gas. The sacrificial material may thus react with the tungsten fluoride gas and be replaced with tungsten. Alternatively, the sacrificial material may react with the molybdenum fluoride gas and be replaced with molybdenum.
The inventive method is applicable to gate formation for both vertical and horizontal channel devices. A vertical channel device may be a vertical field effect transistor (VFET) with a gate-all-around (GAA) configuration, where a gate electrode may completely enclose the vertical channel structure circumferentially. A horizontal channel device may be a finFET (e.g., with a tri-gate configuration) or a horizontal nanowire FET (NW-FET) with a GAA configuration.
Embodiments where the channel structure is vertically oriented, allow forming of a semiconductor device with a vertical channel, such as a vertical field effect transistor, with a gate electrode having a smooth upper surface.
The sacrificial material may be deposited to completely cover a vertically oriented channel structure. The gate length may thereafter be defined by etching back the preliminary sacrificial gate fill structure to a desired level along the vertical channel structure.
The preliminary sacrificial gate fill structure may be etched back such that the channel structure protrudes above the final sacrificial gate fill structure.
Thus, the final sacrificial gate fill structure (and correspondingly also the conductive gate fill structure) may be defined to extend along a vertical section of the channel structure. A portion of the channel structure protruding above the sacrificial gate electrode fill structure may facilitate subsequent source/drain region and source/drain electrode formation.
The method may further comprise, subsequent to replacing the sacrificial material, removing the gate dielectric layer and the work function metal layer from the portion of the channel structure protruding above the final sacrificial gate fill structure. The portion of the channel structure above the final sacrificial gate fill structure may hence be exposed for subsequent processing, such as source/drain region and source/drain electrode formation.
The above, as well as additional objects, features and advantages of the present inventive concept, will be better understood through the following illustrative and non-limiting detailed description, with reference to the appended drawings. In the drawings like reference numerals will be used for like elements unless stated otherwise.
A similar tungsten etch back process may be performed during gate formation also for horizontal channel devices, such as gate formation for finFETs. Subsequent to deposition of one or more work function metal layers in the gate trenches, tungsten may be deposited to fill a remaining space in the gate trenches and thereafter etched back to a desired level in the gate trenches.
A method for forming a gate for a semiconductor device according to embodiments will now be disclosed with reference to
The semiconductor structure 1 comprises a channel structure 5. The channel structure 5 protrudes above the substrate 3. The channel structure 5 is vertically oriented, i.e. extends parallel to a normal direction of the substrate 3. Reference will in the following be made to a single channel structure 5, however as can be seen in
The channel structure 5 may be made of one or more semiconductor materials, for instance Si, SiGe or Ge. As is known in the art, each one of the channel structures 5 may be formed on a doped bottom electrode region of the substrate 3, such that a lower source/drain region may be formed underneath each channel structure 5. The channel structures 5 may be formed using a suitable process, for instance by patterning one or more epitaxial semiconductor layers formed on the substrate 3. As a few non-limiting examples, the channel structures 5 may be patterned in Si-layer, a SiGe-layer or a Ge-layer, or in a stack of layers such as a SiGe/Si/SiGe layer stack or a SiGe/Ge/SiGe layer stack. The present method is applicable to junction-less devices as well as inversion-mode devices and the layer(s) may be doped accordingly. The channel structures 5 may be patterned to present, for instance, a circular, oval or rectangular cross-sectional shape and thus form a pillar or nanowire-like structure. Patterning of the channel structures 5 may comprise defining a patterned mask, such as a hard mask (e.g., of Si3N4, spin-on-carbon or a carbon-based patterning film), an oxide-based mask or a photoresist mask, on the one or more epitaxial semiconductor layers and etching the one or more epitaxial semiconductor layers while using the patterned mask as an etch mask. As shown in
An insulating layer 7 has been formed on the substrate 1. The insulating layer 7 covers an upper surface of the substrate 3, more specifically the bottom electrode region(s) of the substrate 3. The insulating layer 7 surrounds a lower part of the channel structure 5. More specifically, the insulating layer 7 may completely wrap around the lower part of the channel structure 5. The insulating layer 7 may be formed by depositing an insulating material to cover an upper surface of the substrate 1 and the channel structures 5. Following planarization (e.g., by chemical mechanical planarization (CMP)) of the deposited insulating material, etch back may be performed to form the insulating layer 7 with a desired thickness. The insulating layer 7 may be a dielectric material formed by a chemical vapor deposition (CVD) method, for instance a silicon nitride e.g., Si3N4, or an oxide material, e.g., such as SiO2, SiCO, SiON or SiOCN.
Subsequent to forming the insulating layer 7, a stack of a conformal gate dielectric layer and a work function metal (WFM) layer, commonly referenced as a layer 6 for clarity, may be formed on the channel structure 5. The gate dielectric layer may be formed by one or more layers of a suitable gate dielectric material such as SiO2 or HfOx, or any other suitable high-k gate dielectric material. As can be seen in
The work function metal layer may be formed to completely cover the gate dielectric layer. The work function metal layer may be formed by an effective work function metal (EWF). Depending on the conductivity type of the vertical channel device which is to be formed, the conductive layer may for instance be formed by one or more p-type EWF metals such as TiN, TaN, TiTaN or by one or more n-type EWF metals such as Al, TiAl, TiC, or TiAlC, or compound layers such as TiN/TiAl or TiN/TaN/TiAl. The WFM layer may be deposited as a conformal layer, for instance by ALD.
The conversion reaction may comprise exposing the sacrificial material of the final sacrificial gate fill structure 11 to a reactive gas comprising the conductive gate fill material as a component. The reactive gas may be, e.g., tungsten hexafluoride (WF6). Thereby, when the sacrificial material of the gate fill structure 11 comprises Si, a gate fill structure comprising W may be formed through a conversion reaction 2WF6+3Si-->2W+3SiF4, in which Si is volatilized. The reactive gas may be supplied to a reactor chamber in which the structure 1 is arranged. Additional gases may be supplied into the reactor chamber, such as an (inert) carrier gas, for example argon or nitrogen gas. The conversion reaction may be performed at a temperature in the range of about 300 to 450° C. (ambient temperature of the reactor chamber). A pressure may be around 1 Torr. Also other conversion reactions are possible, for instance using molybdenum fluoride, MoFx, as the reactive gas. Thereby, when the sacrificial material of the gate fill structure 11 comprises Si, a gate fill structure comprising Mo may be formed through a corresponding conversion reaction where Si of the sacrificial material acts as a reductant.
The conversion reaction may be performed under a sufficiently long time for the sacrificial material of the final sacrificial gate fill structure 13 to be completely replaced by the conductive gate fill material.
A further insulating layer (e.g., of SiO2 or some other low-k dielectric) can embed the gate electrode(s) and the (previously) exposed protruding portion of the channel structure(s). Upper source/drain regions, source/drain electrodes, and contacts can also be formed.
In the above, the method has been described in the context of a gate-first process, e.g., gate formation prior to top source/drain and electrode formation. However, the method is also compatible with a gate last or replacement metal gate (RMG) process. A RMG process can include removing an amorphous Si (a-Si) or polysilicon sacrificial gate from a gate trench after top source/drain and electrode formation. One or more gate metals may thereafter be deposited in the trench, including a tungsten gate fill metal, which subsequently may be etched back to a desired height/thickness. As described above this etch back may result in surface roughness. The inventive method may instead be implemented in the RMG-process by substituting the conventional tungsten fill deposition and etch back (after sacrificial gate removal) with forming a preliminary sacrificial gate fill structure of the sacrificial silicon material in the gate trench, etching back the preliminary sacrificial gate fill structure to a desired height and thereafter performing the conversion reaction to form the conductive gate fill structure in the gate trench.
In
In the above the inventive concept has mainly been described with reference to a limited number of examples. However, as is readily appreciated by a person skilled in the art, other examples than the ones disclosed above are equally possible within the scope of the inventive concept, as defined by the appended claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 18199227.2 | Oct 2018 | EP | regional |
