Claims
- 1. A method for forming a via, comprising the steps of:
- forming an oxide layer over a conductive element;
- forming and patterning a resist layer over the oxide layer to define via locations;
- anisotropically etching the oxide layer to open vias in the via locations, wherein contaminate particles containing a polymer, created from the resist and etch chemistry, are formed on the sidewalls of the via; and
- removing the contaminate particles with a chemical which acts as a developer for the resist.
- 2. The method of claim 1, wherein said conductive element comprises aluminum.
- 3. The method of claim 2, wherein said conductive element comprises a refractory metal.
- 4. The method of claim 1, wherein said resist layer comprises a positive resist.
- 5. The method of claim 1, wherein said chemical that acts as a solvent contains tetramethylammonium hydroxide.
- 6. The method of claim 1, wherein a conductive layer is deposited over the insulating layer after the contaminate particles are removed, wherein a conductive contact is made between the conductive element and the conductive layer.
- 7. The method of claim 6, wherein said conductive layer comprises aluminum.
- 8. A method of claim 7, wherein said conductive layer comprises a refractory metal.
Parent Case Info
This is a continuation of application Ser. No. 07/786,039, filed Oct. 31, 1991, now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (4)
Number |
Date |
Country |
2625870A1 |
Jun 1976 |
DEX |
3141680A1 |
Oct 1981 |
DEX |
64-002325 |
Jan 1989 |
JPX |
1219740 |
Jan 1989 |
JPX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
786039 |
Oct 1991 |
|