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"Encaspsulated Copper Interconnection Devices Using Sidewall Barriers;" Donald S. Gardner et al.; 1991 VMIC Conference; Jun. 11-12, 1991; pp. 99-108. |
"Planar Copper-Polyimide Back End Of The Line Interconnections For ULSI Devices;" B. Luther et al.; 1993 VMIC Conference; Jun. 8-9, 1993; pp. 15-21. |
"Electroless Cu for VLSI;" James S.H. Cho et al.; MRS Bulletin/Jun. 1993; pp. 31-38. |
"Electroless Copper Deposition on Metals and Metal Silicides;" Cecilia Y. Mak; MRS Bulletin/Aug. 1994; pp. 55-62. |
"Development Of An Electroless Copper Deposition Bath For Via Fill Applications On TiN Seed Layers;" Roger Palmans et al.; Conf. Proc. ULSI-X; Materials Research Society; 1995; pp. 87-94. |
"Selective and Blanket Electroless Cu Plating Initiated By Contact Displacement For Deep Submicron Via Contact Filling;" Dubin et al.; VMIC Conf.; Jun. 27-29, 1995; pp. 315-321. |
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"Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide;" Shi-Qing Wang; MRS Bulletin/Aug. 1994, pp. 30-40. |
"Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing;" S.P. Murarka et al.; MRS Bulletin/Jun. 1993; pp. 46-51. |
"Electrochemically Deposited Diffusion Barriers;" M. Paunovic; et al.; J. Electrochem. Soc., vol. 141 No. 7; Jul. 1994; pp. 1843-1850. |
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"Pd/Si plasma immersion ion implantation for selective electroless copper plating on Si02;" M.-H. Kiang et al.; Appl. Phys. Lett. 60(22); Jun. 1, 1992; pp. 2767-2769. |
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"Passivation of Copper by Silicide Formation In Dilute Silane;" S. Hymes et al.; Conf. Proc. ULSI-VII, Materials Research Society; 1992; pp. 425-431. |
"A Half-Micron Pitch Cu Interconnection Technology;" Kazuyoshi Ueno et al.; 1995 Symposium on VLSI Technology Digest of Technical Papers; 1995; pp. 27-28. |
"Electroless Metal Deposition From Aqueous Solutions;" V.V. Sviridov; Minsk Bielorussian State University; 1987; pp. 60-85. |