Claims
- 1. A method of depositing a tungsten nucleation layer on a substrate in a process chamber, comprising:
(a) providing a flow of a gas mixture comprising a tungsten-containing precursor and a reducing gas to a process chamber to deposit tungsten on a substrate; (b) removing reaction by-products generated during step (a) from the process chamber; (c) providing a flow of the reducing gas to the process chamber to react with residual tungsten-containing precursor in the process chamber and deposit tungsten on the substrate; and (d) removing reaction by-products generated during step (c) from the process chamber.
- 2. The method of claim 1 further comprising repeating steps (a)-(d) until a tungsten nucleation layer thickness of up to about 500 Å is deposited.
- 3. The method of claim 1 wherein the tungsten-containing precursor comprises tungsten hexafluoride (WF6).
- 4. The method of claim 1 wherein the reducing gas in steps (a) and (c) is selected from the group consisting of silane (SiH4), disilane (Si2H6), borane (BH3), diborane (B2H6), and combinations thereof.
- 5. The method of claim 1 wherein the gas mixture of step (a) is provided for a time period of about 0.1 seconds to about 10 seconds.
- 6. The method of claim 1 wherein the tungsten-containing precursor and the reducing gas are provided in a tungsten-containing precursor:reducing gas ratio of about 1:1 to about 5:1.
- 7. The method of claim 1 wherein the reaction by-products in steps (b) and (d) are removed from the process chamber by providing a purge gas thereto and evacuating both the purge gas and the reaction by-products therefrom.
- 8. The method of claim 7 wherein the purge gas comprises on or more gases selected from the group consisting of nitrogen (N2), helium (He), argon (Ar), xenon (Xe) and neon (Ne).
- 9. The method of claim 7 wherein the purge gas is provided to the process chamber for up to about 10 seconds.
- 10. The method of claim 1 wherein the reducing gas of step (c) is provided to the process chamber for up to about 10 seconds.
- 11. The method of claim 1 wherein time periods for steps (b) and (c) overlap.
- 12. A method of depositing a tungsten nucleation layer on a substrate in a process chamber, comprising:
(a) providing a flow of a gas mixture comprising a tungsten-containing precursor and a reducing gas to a process chamber for about 0.1 seconds to about 10 seconds to deposit tungsten on a substrate; (b) removing reaction by-products generated during step (a) by providing a purge gas to the process chamber and evacuating both the purge gas and the reaction by-products therefrom; (c) providing a flow of the reducing gas to the process chamber for up to about 10 seconds to react with residual tungsten-containing precursor in the process chamber and deposit tungsten on the substrate; (d) removing reaction by-products generated during step (c) by providing a purge gas to the process chamber and evacuating both the purge gas and the reaction by-products therefrom; and (e) repeating steps (a)-(d) until a tungsten nucleation layer thickness of up to about 500 Å is deposited.
- 13. The method of claim 12 wherein the tungsten-containing precursor comprises tungsten hexafluoride (WF6).
- 14. The method of claim 12 wherein the reducing gas in steps (a) and (c) is selected from the group consisting of silane (SiH4), disilane (Si2H6), borane (BH3), diborane (B2H6), and combinations thereof.
- 15. The method of claim 12 wherein the tungsten-containing precursor and the reducing gas are provided in a tungsten-containing precursor:reducing gas ratio of about 1:1 to about 5:1.
- 16. The method of claim 12 wherein the purge gas of steps (b) and (d) comprises one or more gases selected from the group consisting of nitrogen (N2), helium (He), argon (Ar), xenon (Xe) and neon (Ne).
- 17. The method of claim 12 wherein the purge gas of steps (b) and (d) is provided to the process chamber for up to about 10 seconds.
- 18. The method of claim 12 wherein time periods for steps (b) and (c) overlap.
- 19. A method of depositing a tungsten nucleation layer on a substrate in a process chamber, comprising:
(a) providing a flow of a gas mixture comprising tungsten hexafluoride (WF6) and silane (SiH4) to a process chamber for about 0.1 seconds to about 10 seconds to deposit tungsten on a substrate; (b) removing reaction by-products generated during step (a) by providing a purge gas to the process chamber and evacuating both the purge gas and the reaction by-products therefrom; (c) providing a flow of silane (SiH4) to the process chamber for up to about 10 seconds to react with residual tungsten hexafluoride (WF6) in the process chamber and deposit tungsten on the substrate; (d) removing reaction by-products generated during step (c) by providing a purge gas to the process chamber and evacuating both the purge gas and the reaction by-products therefrom; and (e) repeating steps (a)-(d) until a tungsten nucleation layer thickness of up to about 500 Å is deposited.
- 20. The method of claim 19 wherein the tungsten hexafluoride (WF6) and the silane (SiH4) are provided in a tungsten hexafluoride (WF6):silane (SiH4) ratio of about 1:1 to about 5:1.
- 21. The method of claim 19 wherein the purge gas of steps (b) and (d) comprises one or more gases selected from the group consisting of nitrogen (N2), helium (He), argon (Ar), xenon (Xe) and neon (Ne).
- 22. The method of claim 19 wherein the purge gas of steps (b) and (d) is provided to the process chamber for up to about 10 seconds.
- 23. The method of claim 19 wherein time periods for steps (b) and (c) overlap.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation-in-part of application Serial No. 10/023,125, filed Dec. 17, 2001, entitled “Pulse Nucleation Enhanced Nucleation Technique For Improved Step Coverage and Better Gap Fill For WCVD Process,” which in turn claims priority from U.S. provisional application No. 60/305,307, filed Jul. 13, 2001, entitled “Pulse Nucleation Enhanced Nucleation Technique For Improved Step Coverage and Better Gap Fill For WCVD Process.” Each of these applications is incorporated herein by reference in its entirety.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60305307 |
Jul 2001 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
10023125 |
Dec 2001 |
US |
Child |
10194629 |
Jul 2002 |
US |