Claims
- 1. A method of reactive ion etching a material that includes at least one of RuO.sub.2 and lead zirconate titanate, comprising: placing the material into a chamber, the chamber containing CHClFCF.sub.3, and producing a glow discharge in the chamber to etch the material.
- 2. The method of claim 1, wherein the material includes both RuO.sub.2 and lead zirconate titanate.
- 3. The method of claim 2, wherein the glow discharge is produced by radio frequency.
- 4. The method of claim 3, wherein the radio frequency power is between 125 and 200 watts.
- 5. The method of claim 1, wherein the chamber includes O.sub.2.
- 6. The method of claim 5, wherein the O.sub.2 content in the chamber is between 10% and 50% of the total gas content in the chamber.
- 7. The method of claim 5, wherein the gas pressure in the chamber is less than about 175 mTorr.
- 8. A method of patterning a semiconductor device that includes at least one of RuO.sub.2 and lead zirconate titanate, comprising: applying a mask over the material which covers a portion of the material and leaves exposed another portion of the material, placing the material with the applied mask into a chamber including CHClFCF.sub.3, and producing a glow discharge in the chamber to reactively ion etch the exposed portion of the material.
- 9. The method of claim 8, wherein the device includes both lead zirconate titanate and RuO.sub.2, and the lead zirconate titanate functions as a dielectric and the RuO.sub.2 functions as an electrode.
- 10. The method of claim 8, wherein the glow discharge is produced by radio frequency.
Government Interests
This invention was made with Government support under Grant N00014-90-J-1957 awarded by the Department of the Navy. The Government has certain rights in the invention.
US Referenced Citations (4)