Wolf, "Silicon processing for the VLSI Era, vol. 1, Process Technology", pp. 198-218, 1986. |
Molle, P. et al., "Nitrogen Implantation for Local Oxidation of Silicon," Nuclear Instruments & Methods in Physics Research, Section--B: Beam Interactions with Materials and Atoms, vol. B55, No. 1/ Apr. 4, 1991, pp. 860-865. |
Schott, K. et al., "Blocking of Silicon Oxidation by Low-Dose Nitrogen Implantation," Applied Physics A. Solids and Surfaces, vol. A45, No. 1, Jan. 1, 1988, pp. 73-76. |
International Search Report for PCT/US 97/03823 dated Jul. 16, 1997. |
Naito et al., "Effect of Bottom Oxide on the Integrity of Interpolysilicon Ultrthin ONO Films," Journal of the Electrochemical Society, vol. 137, No. 2, Feb. 1, 1990, pp. 635-638. |
Abbas et al., "Improvement of the Gate-Region Integrity in FET Devices," IBM Technical Disclosure Bulletin, vol. 14, No. 11, Apr. 1972, pp. 3348-3350. |
CHeung, "Plasma Immersion Ion Implantation for ULSI Processing," Trends & Applications, 1991, pp. 811-820. |
Wolf et al., "Silicon Processing for the VLSI Era, vol. 1, Process Tehnology," p. 321. |
Kuroi, et al "Novel NICE Structure For High Reliability and High Performance 0.25 micron Dual Gate CMOS", IEDM, pp. 325-328; no month, 1993. |
Patent Abstracts of Japan, Publication No. 01183844; Publication Date: Jul. 21, 1989; Application Date: Jan. 19, 1988; Application No.: 63008901. |
Doyle, B. et al., "Simultaneous Growth of Different Thickness Gate Oxides in SIlicon CMOS Processing," IEEE Electron Device Letters, vol. 16, No. 7, Jul. 1995, pp. 301-302. |
Philipossian, A. et al., "Kinetics of Oxide Growth During Reoxidation of Lightly Nitrided Oxides," J. Electrochem. Soc. V. 139, No. 9 Sep. 1992, pp. L82-3. |
Ahn, J. et al., "High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N20," J. Electrochem. Soc. V. 139, No. 9, Sep. 1991, pp. L39-41. |