This invention relates generally to microelectromechanical systems (MEMS) and, particularly, to MEMS switches.
Microelectromechanical switches have intrinsic advantages over traditional solid state switches, including low insertion loss, excellent isolation, and superior linearity. However, for higher frequency switching operations, MEMS switches may be too slow or may require too much actuation voltage. This is especially true in radio frequency transmission or receiving switching applications.
Because the speed of a mechanical switch is limited by its resonance frequency, the speed may be increased by increasing the stiffness of the switch. However, a stiff switch requires higher actuation voltage for the switching actuation.
Thus, there is a need for a way to enable MEMS switches to react more quickly without requiring significantly higher actuation voltages.
Referring to
The cantilevered beam 16 is electrically drawn towards the substrate 12 by the attractive force supplied from an actuator 14a. At the same time, the extension 18 can be drawn towards the substrate 12 by an actuator 14b. When the cantilevered beam 16 approaches the substrate 12 sufficiently, an electrical contact is made between the contact 22 on the beam 16 and a contact pad 24 on the substrate 12.
By application of a voltage to both actuators 14a and 14b, the amount of force that must be applied to the beam 16 may be decreased. As a result, the amplitude of the actuating voltage may be reduced.
At the same time, the beam 16 may be made relatively stiff because its stiffness is not a problem in terms of actuating force. In other words, a stiffer beam 16 may be utilized that reacts more quickly in higher frequency switching applications. At the same time, the beam 16 has lower actuation force, given the stiffness of the beam 16, due to the fact that the extension 18 and the actuator 14b enable lower voltages to be utilized to close the switch 10.
In some embodiments, a relatively thin dielectric layer 20 may be positioned over the actuator 14b. As shown in
As shown in
Because the dielectric layer 20 is thin and the electrostatic force is proportional to the inverse of the gap, the thinner extension 18 quickly closes, as shown in
The release of the closed switch 10 begins, as shown in
Referring to
Referring to
Thus, as shown in
While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
This is a continuation-in-part of prior application Ser. No. 09/943,451, filed Aug. 30, 2001, now U.S. Pat. No. 6,531,668.
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Number | Date | Country |
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Number | Date | Country | |
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Number | Date | Country | |
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Parent | 09943451 | Aug 2001 | US |
Child | 10185283 | US |